CN101611482B - 用于使集成电路表面暴露的方法和设备 - Google Patents

用于使集成电路表面暴露的方法和设备 Download PDF

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Publication number
CN101611482B
CN101611482B CN200780050958XA CN200780050958A CN101611482B CN 101611482 B CN101611482 B CN 101611482B CN 200780050958X A CN200780050958X A CN 200780050958XA CN 200780050958 A CN200780050958 A CN 200780050958A CN 101611482 B CN101611482 B CN 101611482B
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CN
China
Prior art keywords
integrated circuit
plasma
applying
circuit
laser radiation
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Expired - Fee Related
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CN200780050958XA
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English (en)
Chinese (zh)
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CN101611482A (zh
Inventor
R·德斯朴拉特斯
M·欧贝因
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Centre National dEtudes Spatiales CNES
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Centre National dEtudes Spatiales CNES
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Publication of CN101611482A publication Critical patent/CN101611482A/zh
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    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00—Working by laser beam, e.g. welding, cutting or boring
    • B23K26/346—Working by laser beam, e.g. welding, cutting or boring in combination with welding or cutting covered by groups B23K5/00 - B23K25/00, e.g. in combination with resistance welding
    • B23K26/348—Working by laser beam, e.g. welding, cutting or boring in combination with welding or cutting covered by groups B23K5/00 - B23K25/00, e.g. in combination with resistance welding in combination with arc heating, e.g. TIG [tungsten inert gas], MIG [metal inert gas] or plasma welding
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/42—Stripping or agents therefor
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/42—Stripping or agents therefor
    • G03F7/427—Stripping or agents therefor using plasma means only
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32798—Further details of plasma apparatus not provided for in groups H01J37/3244 - H01J37/32788; special provisions for cleaning or maintenance of the apparatus
    • H01J37/32816—Pressure
    • H01J37/32825—Working under atmospheric pressure or higher
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the groups H01L21/18 - H01L21/326 or H10D48/04 - H10D48/07 e.g. sealing of a cap to a base of a container
    • H01L21/56—Encapsulations, e.g. encapsulation layers, coatings
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67126—Apparatus for sealing, encapsulating, glassing, decapsulating or the like
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • General Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Chemical & Material Sciences (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Analytical Chemistry (AREA)
  • Computer Hardware Design (AREA)
  • Mechanical Engineering (AREA)
  • Drying Of Semiconductors (AREA)
  • Laser Beam Processing (AREA)
  • Encapsulation Of And Coatings For Semiconductor Or Solid State Devices (AREA)
  • Treatments Of Macromolecular Shaped Articles (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
CN200780050958XA 2006-12-28 2007-12-12 用于使集成电路表面暴露的方法和设备 Expired - Fee Related CN101611482B (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
FR0611489 2006-12-28
FR0611489A FR2911003B1 (fr) 2006-12-28 2006-12-28 Procede et installation de mise a nu de la surface d'un circuit integre
PCT/FR2007/002056 WO2008090281A1 (fr) 2006-12-28 2007-12-12 Procede et installation de mise a nu de la surface d'un circuit integre

Publications (2)

Publication Number Publication Date
CN101611482A CN101611482A (zh) 2009-12-23
CN101611482B true CN101611482B (zh) 2012-07-25

Family

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Family Applications (1)

Application Number Title Priority Date Filing Date
CN200780050958XA Expired - Fee Related CN101611482B (zh) 2006-12-28 2007-12-12 用于使集成电路表面暴露的方法和设备

Country Status (10)

Country Link
US (1) US8555728B2 (enExample)
EP (1) EP2095410B1 (enExample)
JP (1) JP2010515251A (enExample)
KR (1) KR101348971B1 (enExample)
CN (1) CN101611482B (enExample)
ES (1) ES2405745T3 (enExample)
FR (1) FR2911003B1 (enExample)
MY (1) MY156014A (enExample)
RU (1) RU2450386C2 (enExample)
WO (1) WO2008090281A1 (enExample)

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8844793B2 (en) * 2010-11-05 2014-09-30 Raytheon Company Reducing formation of oxide on solder
US8796151B2 (en) * 2012-04-04 2014-08-05 Ultratech, Inc. Systems for and methods of laser-enhanced plasma processing of semiconductor materials
US9543225B2 (en) * 2014-04-29 2017-01-10 Lam Research Corporation Systems and methods for detecting endpoint for through-silicon via reveal applications
RU2572290C1 (ru) * 2014-12-01 2016-01-10 Открытое акционерное общество "Объединенная ракетно-космическая корпорация" (ОАО "ОРКК") Способ декорпусирования интегральных микросхем
KR102065012B1 (ko) * 2016-07-26 2020-01-10 에이피시스템 주식회사 레이저 처리장치 및 레이저 처리방법
US20210333711A1 (en) * 2018-08-14 2021-10-28 The Board Of Trustees Of The University Of Illinois Photoresist-free photolithography, photoprocessing tools, and methods with vuv or deep-uv lamps
CN111495880A (zh) * 2020-04-01 2020-08-07 武汉大学 Movcd中的激光等离子复合清洗装置
GB2612360B (en) * 2021-11-01 2025-04-30 Aquasium Tech Limited Laser welding apparatus
CN116013817B (zh) * 2023-01-17 2024-03-19 上海季丰电子股份有限公司 芯片封装破除装置及方法

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4689467A (en) * 1982-12-17 1987-08-25 Inoue-Japax Research Incorporated Laser machining apparatus

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US4611919A (en) * 1984-03-09 1986-09-16 Tegal Corporation Process monitor and method thereof
US4714516A (en) * 1986-09-26 1987-12-22 General Electric Company Method to produce via holes in polymer dielectrics for multiple electronic circuit chip packaging
JPH01179153A (ja) * 1988-01-08 1989-07-17 Seiko Instr & Electron Ltd フォーカスイオンビーム加工装置
JP2854963B2 (ja) * 1990-11-28 1999-02-10 株式会社日立製作所 固相接合方法および装置
JP4513973B2 (ja) * 1996-12-04 2010-07-28 セイコーエプソン株式会社 半導体装置の製造方法
US6071009A (en) * 1997-10-03 2000-06-06 Micron Technology, Inc. Semiconductor wirebond machine leadframe thermal map system
JP2001049014A (ja) 1999-08-10 2001-02-20 Sharp Corp 有機高分子膜の加工方法およびそれを用いて加工された構造体
JP2002110613A (ja) * 2000-09-26 2002-04-12 Matsushita Electric Works Ltd プラズマ洗浄装置及びプラズマ洗浄方法
US6699780B1 (en) * 2000-10-13 2004-03-02 Bridge Semiconductor Corporation Method of connecting a conductive trace to a semiconductor chip using plasma undercut etching
JP2002222835A (ja) * 2001-01-25 2002-08-09 Nec Corp 銅張り樹脂基板の加工方法
US7000313B2 (en) * 2001-03-08 2006-02-21 Ppg Industries Ohio, Inc. Process for fabricating circuit assemblies using electrodepositable dielectric coating compositions
ATE488614T1 (de) * 2002-08-28 2010-12-15 Moxtronics Inc Hybridstrahl-beschichtungssystem und verfahren zur herstellung von zno-schichten
US20040150096A1 (en) * 2003-02-03 2004-08-05 International Business Machines Corporation Capping coating for 3D integration applications
JP2004273771A (ja) * 2003-03-10 2004-09-30 Fuji Electric Device Technology Co Ltd 半導体装置の製造方法
RU2272335C2 (ru) * 2003-11-14 2006-03-20 Юрий Дмитриевич Сасов Способ испытаний и контроля электронных компонентов
US20050221586A1 (en) * 2003-12-18 2005-10-06 Mulligan Rose A Methods and apparatus for laser dicing
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Patent Citations (1)

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Publication number Priority date Publication date Assignee Title
US4689467A (en) * 1982-12-17 1987-08-25 Inoue-Japax Research Incorporated Laser machining apparatus

Non-Patent Citations (1)

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Also Published As

Publication number Publication date
KR101348971B1 (ko) 2014-01-10
FR2911003B1 (fr) 2009-10-02
WO2008090281A1 (fr) 2008-07-31
JP2010515251A (ja) 2010-05-06
MY156014A (en) 2015-12-31
US20100154558A1 (en) 2010-06-24
CN101611482A (zh) 2009-12-23
FR2911003A1 (fr) 2008-07-04
KR20090106549A (ko) 2009-10-09
EP2095410B1 (fr) 2013-04-10
ES2405745T3 (es) 2013-06-03
US8555728B2 (en) 2013-10-15
RU2009128992A (ru) 2011-02-10
RU2450386C2 (ru) 2012-05-10
EP2095410A1 (fr) 2009-09-02

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Granted publication date: 20120725

Termination date: 20211212

CF01 Termination of patent right due to non-payment of annual fee