JP2010503218A5 - - Google Patents

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Publication number
JP2010503218A5
JP2010503218A5 JP2009526863A JP2009526863A JP2010503218A5 JP 2010503218 A5 JP2010503218 A5 JP 2010503218A5 JP 2009526863 A JP2009526863 A JP 2009526863A JP 2009526863 A JP2009526863 A JP 2009526863A JP 2010503218 A5 JP2010503218 A5 JP 2010503218A5
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JP
Japan
Prior art keywords
bit line
trenches
aperture
semiconductor device
device structure
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Application number
JP2009526863A
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English (en)
Japanese (ja)
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JP5532400B2 (ja
JP2010503218A (ja
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Priority claimed from US11/511,541 external-priority patent/US7960797B2/en
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Publication of JP2010503218A publication Critical patent/JP2010503218A/ja
Publication of JP2010503218A5 publication Critical patent/JP2010503218A5/ja
Application granted granted Critical
Publication of JP5532400B2 publication Critical patent/JP5532400B2/ja
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JP2009526863A 2006-08-29 2007-08-28 スタガードコンタクトを持つファインピッチアレイを含む半導体デバイスと、その設計および製造のための方法 Active JP5532400B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US11/511,541 US7960797B2 (en) 2006-08-29 2006-08-29 Semiconductor devices including fine pitch arrays with staggered contacts
US11/511,541 2006-08-29
PCT/US2007/076970 WO2008027876A2 (en) 2006-08-29 2007-08-28 Semiconductor devices including fine pitch arrays with staggered contacts and methods for designing and fabricating the same

Publications (3)

Publication Number Publication Date
JP2010503218A JP2010503218A (ja) 2010-01-28
JP2010503218A5 true JP2010503218A5 (https=) 2012-12-06
JP5532400B2 JP5532400B2 (ja) 2014-06-25

Family

ID=39136779

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2009526863A Active JP5532400B2 (ja) 2006-08-29 2007-08-28 スタガードコンタクトを持つファインピッチアレイを含む半導体デバイスと、その設計および製造のための方法

Country Status (7)

Country Link
US (2) US7960797B2 (https=)
EP (1) EP2057676B1 (https=)
JP (1) JP5532400B2 (https=)
KR (1) KR101173723B1 (https=)
CN (1) CN101506967B (https=)
TW (1) TWI369756B (https=)
WO (1) WO2008027876A2 (https=)

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KR100833201B1 (ko) * 2007-06-15 2008-05-28 삼성전자주식회사 콘택 플러그 및 배선 라인 일체형 구조의 미세 패턴을가지는 반도체 소자 및 그 제조 방법
JP2007103410A (ja) * 2005-09-30 2007-04-19 Elpida Memory Inc 密集コンタクトホールを有する半導体デバイス
KR100834267B1 (ko) * 2007-05-07 2008-05-30 주식회사 하이닉스반도체 노광 마스크 및 이를 이용한 반도체 소자의 콘택홀 제조방법
US7939451B2 (en) * 2007-06-07 2011-05-10 Macronix International Co., Ltd. Method for fabricating a pattern
US8481417B2 (en) 2007-08-03 2013-07-09 Micron Technology, Inc. Semiconductor structures including tight pitch contacts and methods to form same
US8283258B2 (en) * 2007-08-16 2012-10-09 Micron Technology, Inc. Selective wet etching of hafnium aluminum oxide films
US8062971B2 (en) * 2008-03-19 2011-11-22 Infineon Technologies Ag Dual damascene process
KR101409840B1 (ko) * 2008-06-04 2014-06-20 삼성전자주식회사 반도체 소자 및 그 제조방법
US8058732B2 (en) * 2008-11-20 2011-11-15 Fairchild Semiconductor Corporation Semiconductor die structures for wafer-level chipscale packaging of power devices, packages and systems for using the same, and methods of making the same
US8541311B2 (en) * 2010-12-22 2013-09-24 GlobalFoundries, Inc. Integrated circuit fabrication methods utilizing embedded hardmask layers for high resolution patterning
JP2012199381A (ja) * 2011-03-22 2012-10-18 Toshiba Corp 半導体装置およびその製造方法
US8586478B2 (en) * 2011-03-28 2013-11-19 Renesas Electronics Corporation Method of making a semiconductor device
US9536952B2 (en) 2014-05-12 2017-01-03 Intersil Americas LLC Body contact layouts for semiconductor structures
CN109983564B (zh) * 2016-11-16 2023-05-02 东京毅力科创株式会社 亚分辨率衬底图案化的方法
JP6939497B2 (ja) * 2017-12-13 2021-09-22 富士電機株式会社 抵抗素子
CN108735711B (zh) * 2017-04-13 2021-04-23 中芯国际集成电路制造(北京)有限公司 一种半导体器件及其制备方法、电子装置
US10361158B2 (en) * 2017-08-29 2019-07-23 Micron Technology, Inc. Integrated assemblies having structures along a first pitch coupled with structures along a second pitch different from the first pitch
US10559492B2 (en) * 2017-11-15 2020-02-11 Taiwan Semiconductor Manufacturing Company, Ltd. Patterning methods for semiconductor devices and structures resulting therefrom
KR102665246B1 (ko) 2018-07-03 2024-05-09 삼성전자주식회사 반도체 장치 및 이의 제조 방법
US10777562B1 (en) * 2019-03-14 2020-09-15 Micron Technology, Inc. Integrated circuity, DRAM circuitry, methods used in forming integrated circuitry, and methods used in forming DRAM circuitry
US11217594B2 (en) * 2019-09-05 2022-01-04 Nanya Technology Corporation Semiconductor device and method for fabricating the same

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EP0912996B1 (en) 1996-07-18 2002-01-02 Advanced Micro Devices, Inc. Integrated circuit which uses an etch stop for producing staggered interconnect lines
KR100506101B1 (ko) * 1996-11-14 2006-04-21 텍사스 인스트루먼츠 인코포레이티드 메모리 셀 어레이 제조방법 및 메모리 셀 어레이
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