TWI369756B - Semiconductor devices including fine pitch arrays with staggered contacts and methods for designing and fabricating the same - Google Patents

Semiconductor devices including fine pitch arrays with staggered contacts and methods for designing and fabricating the same

Info

Publication number
TWI369756B
TWI369756B TW096132106A TW96132106A TWI369756B TW I369756 B TWI369756 B TW I369756B TW 096132106 A TW096132106 A TW 096132106A TW 96132106 A TW96132106 A TW 96132106A TW I369756 B TWI369756 B TW I369756B
Authority
TW
Taiwan
Prior art keywords
fabricating
designing
methods
semiconductor devices
same
Prior art date
Application number
TW096132106A
Other languages
English (en)
Chinese (zh)
Other versions
TW200822285A (en
Inventor
John K Lee
Hyuntae Kim
Richard L Stocks
Luan Tran
Original Assignee
Micron Technology Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Micron Technology Inc filed Critical Micron Technology Inc
Publication of TW200822285A publication Critical patent/TW200822285A/zh
Application granted granted Critical
Publication of TWI369756B publication Critical patent/TWI369756B/zh

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B12/00—Dynamic random access memory [DRAM] devices
    • H10B12/30—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells
    • H10B12/48—Data lines or contacts therefor
    • H10B12/485—Bit line contacts
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/01—Manufacture or treatment
    • H10W20/071—Manufacture or treatment of dielectric parts thereof
    • H10W20/081—Manufacture or treatment of dielectric parts thereof by forming openings in the dielectric parts
    • H10W20/089—Manufacture or treatment of dielectric parts thereof by forming openings in the dielectric parts using processes for implementing desired shapes or dispositions of the openings, e.g. double patterning
TW096132106A 2006-08-29 2007-08-29 Semiconductor devices including fine pitch arrays with staggered contacts and methods for designing and fabricating the same TWI369756B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US11/511,541 US7960797B2 (en) 2006-08-29 2006-08-29 Semiconductor devices including fine pitch arrays with staggered contacts

Publications (2)

Publication Number Publication Date
TW200822285A TW200822285A (en) 2008-05-16
TWI369756B true TWI369756B (en) 2012-08-01

Family

ID=39136779

Family Applications (1)

Application Number Title Priority Date Filing Date
TW096132106A TWI369756B (en) 2006-08-29 2007-08-29 Semiconductor devices including fine pitch arrays with staggered contacts and methods for designing and fabricating the same

Country Status (7)

Country Link
US (2) US7960797B2 (https=)
EP (1) EP2057676B1 (https=)
JP (1) JP5532400B2 (https=)
KR (1) KR101173723B1 (https=)
CN (1) CN101506967B (https=)
TW (1) TWI369756B (https=)
WO (1) WO2008027876A2 (https=)

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KR100833201B1 (ko) * 2007-06-15 2008-05-28 삼성전자주식회사 콘택 플러그 및 배선 라인 일체형 구조의 미세 패턴을가지는 반도체 소자 및 그 제조 방법
JP2007103410A (ja) * 2005-09-30 2007-04-19 Elpida Memory Inc 密集コンタクトホールを有する半導体デバイス
KR100834267B1 (ko) * 2007-05-07 2008-05-30 주식회사 하이닉스반도체 노광 마스크 및 이를 이용한 반도체 소자의 콘택홀 제조방법
US7939451B2 (en) * 2007-06-07 2011-05-10 Macronix International Co., Ltd. Method for fabricating a pattern
US8481417B2 (en) 2007-08-03 2013-07-09 Micron Technology, Inc. Semiconductor structures including tight pitch contacts and methods to form same
US8283258B2 (en) * 2007-08-16 2012-10-09 Micron Technology, Inc. Selective wet etching of hafnium aluminum oxide films
US8062971B2 (en) * 2008-03-19 2011-11-22 Infineon Technologies Ag Dual damascene process
KR101409840B1 (ko) * 2008-06-04 2014-06-20 삼성전자주식회사 반도체 소자 및 그 제조방법
US8058732B2 (en) * 2008-11-20 2011-11-15 Fairchild Semiconductor Corporation Semiconductor die structures for wafer-level chipscale packaging of power devices, packages and systems for using the same, and methods of making the same
US8541311B2 (en) * 2010-12-22 2013-09-24 GlobalFoundries, Inc. Integrated circuit fabrication methods utilizing embedded hardmask layers for high resolution patterning
JP2012199381A (ja) * 2011-03-22 2012-10-18 Toshiba Corp 半導体装置およびその製造方法
US8586478B2 (en) * 2011-03-28 2013-11-19 Renesas Electronics Corporation Method of making a semiconductor device
US9536952B2 (en) 2014-05-12 2017-01-03 Intersil Americas LLC Body contact layouts for semiconductor structures
CN109983564B (zh) * 2016-11-16 2023-05-02 东京毅力科创株式会社 亚分辨率衬底图案化的方法
JP6939497B2 (ja) * 2017-12-13 2021-09-22 富士電機株式会社 抵抗素子
CN108735711B (zh) * 2017-04-13 2021-04-23 中芯国际集成电路制造(北京)有限公司 一种半导体器件及其制备方法、电子装置
US10361158B2 (en) * 2017-08-29 2019-07-23 Micron Technology, Inc. Integrated assemblies having structures along a first pitch coupled with structures along a second pitch different from the first pitch
US10559492B2 (en) * 2017-11-15 2020-02-11 Taiwan Semiconductor Manufacturing Company, Ltd. Patterning methods for semiconductor devices and structures resulting therefrom
KR102665246B1 (ko) 2018-07-03 2024-05-09 삼성전자주식회사 반도체 장치 및 이의 제조 방법
US10777562B1 (en) * 2019-03-14 2020-09-15 Micron Technology, Inc. Integrated circuity, DRAM circuitry, methods used in forming integrated circuitry, and methods used in forming DRAM circuitry
US11217594B2 (en) * 2019-09-05 2022-01-04 Nanya Technology Corporation Semiconductor device and method for fabricating the same

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EP0912996B1 (en) 1996-07-18 2002-01-02 Advanced Micro Devices, Inc. Integrated circuit which uses an etch stop for producing staggered interconnect lines
KR100506101B1 (ko) * 1996-11-14 2006-04-21 텍사스 인스트루먼츠 인코포레이티드 메모리 셀 어레이 제조방법 및 메모리 셀 어레이
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Also Published As

Publication number Publication date
US8367482B2 (en) 2013-02-05
TW200822285A (en) 2008-05-16
KR20090057052A (ko) 2009-06-03
JP5532400B2 (ja) 2014-06-25
EP2057676B1 (en) 2019-11-06
WO2008027876A2 (en) 2008-03-06
US20110223761A1 (en) 2011-09-15
US20080054483A1 (en) 2008-03-06
US7960797B2 (en) 2011-06-14
CN101506967A (zh) 2009-08-12
EP2057676A2 (en) 2009-05-13
KR101173723B1 (ko) 2012-08-13
CN101506967B (zh) 2013-03-13
WO2008027876A3 (en) 2008-06-19
JP2010503218A (ja) 2010-01-28

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