CN101506967B - 包含精细间距阵列且具有交错触点的半导体装置及其设计和制造方法 - Google Patents

包含精细间距阵列且具有交错触点的半导体装置及其设计和制造方法 Download PDF

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Publication number
CN101506967B
CN101506967B CN2007800316680A CN200780031668A CN101506967B CN 101506967 B CN101506967 B CN 101506967B CN 2007800316680 A CN2007800316680 A CN 2007800316680A CN 200780031668 A CN200780031668 A CN 200780031668A CN 101506967 B CN101506967 B CN 101506967B
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aperture
row
contact
mask
roughly
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CN101506967A (zh
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约翰·K·李
金铉台
理查德·L·斯托克斯
卢安·特兰
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Micron Technology Inc
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Micron Technology Inc
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B12/00—Dynamic random access memory [DRAM] devices
    • H10B12/30—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells
    • H10B12/48—Data lines or contacts therefor
    • H10B12/485—Bit line contacts
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/01—Manufacture or treatment
    • H10W20/071—Manufacture or treatment of dielectric parts thereof
    • H10W20/081—Manufacture or treatment of dielectric parts thereof by forming openings in the dielectric parts
    • H10W20/089—Manufacture or treatment of dielectric parts thereof by forming openings in the dielectric parts using processes for implementing desired shapes or dispositions of the openings, e.g. double patterning

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  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Electrodes Of Semiconductors (AREA)
CN2007800316680A 2006-08-29 2007-08-28 包含精细间距阵列且具有交错触点的半导体装置及其设计和制造方法 Active CN101506967B (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US11/511,541 US7960797B2 (en) 2006-08-29 2006-08-29 Semiconductor devices including fine pitch arrays with staggered contacts
US11/511,541 2006-08-29
PCT/US2007/076970 WO2008027876A2 (en) 2006-08-29 2007-08-28 Semiconductor devices including fine pitch arrays with staggered contacts and methods for designing and fabricating the same

Publications (2)

Publication Number Publication Date
CN101506967A CN101506967A (zh) 2009-08-12
CN101506967B true CN101506967B (zh) 2013-03-13

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CN2007800316680A Active CN101506967B (zh) 2006-08-29 2007-08-28 包含精细间距阵列且具有交错触点的半导体装置及其设计和制造方法

Country Status (7)

Country Link
US (2) US7960797B2 (https=)
EP (1) EP2057676B1 (https=)
JP (1) JP5532400B2 (https=)
KR (1) KR101173723B1 (https=)
CN (1) CN101506967B (https=)
TW (1) TWI369756B (https=)
WO (1) WO2008027876A2 (https=)

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KR100833201B1 (ko) * 2007-06-15 2008-05-28 삼성전자주식회사 콘택 플러그 및 배선 라인 일체형 구조의 미세 패턴을가지는 반도체 소자 및 그 제조 방법
JP2007103410A (ja) * 2005-09-30 2007-04-19 Elpida Memory Inc 密集コンタクトホールを有する半導体デバイス
KR100834267B1 (ko) * 2007-05-07 2008-05-30 주식회사 하이닉스반도체 노광 마스크 및 이를 이용한 반도체 소자의 콘택홀 제조방법
US7939451B2 (en) * 2007-06-07 2011-05-10 Macronix International Co., Ltd. Method for fabricating a pattern
US8481417B2 (en) 2007-08-03 2013-07-09 Micron Technology, Inc. Semiconductor structures including tight pitch contacts and methods to form same
US8283258B2 (en) * 2007-08-16 2012-10-09 Micron Technology, Inc. Selective wet etching of hafnium aluminum oxide films
US8062971B2 (en) * 2008-03-19 2011-11-22 Infineon Technologies Ag Dual damascene process
KR101409840B1 (ko) * 2008-06-04 2014-06-20 삼성전자주식회사 반도체 소자 및 그 제조방법
US8058732B2 (en) * 2008-11-20 2011-11-15 Fairchild Semiconductor Corporation Semiconductor die structures for wafer-level chipscale packaging of power devices, packages and systems for using the same, and methods of making the same
US8541311B2 (en) * 2010-12-22 2013-09-24 GlobalFoundries, Inc. Integrated circuit fabrication methods utilizing embedded hardmask layers for high resolution patterning
JP2012199381A (ja) * 2011-03-22 2012-10-18 Toshiba Corp 半導体装置およびその製造方法
US8586478B2 (en) * 2011-03-28 2013-11-19 Renesas Electronics Corporation Method of making a semiconductor device
US9536952B2 (en) 2014-05-12 2017-01-03 Intersil Americas LLC Body contact layouts for semiconductor structures
CN109983564B (zh) * 2016-11-16 2023-05-02 东京毅力科创株式会社 亚分辨率衬底图案化的方法
JP6939497B2 (ja) * 2017-12-13 2021-09-22 富士電機株式会社 抵抗素子
CN108735711B (zh) * 2017-04-13 2021-04-23 中芯国际集成电路制造(北京)有限公司 一种半导体器件及其制备方法、电子装置
US10361158B2 (en) * 2017-08-29 2019-07-23 Micron Technology, Inc. Integrated assemblies having structures along a first pitch coupled with structures along a second pitch different from the first pitch
US10559492B2 (en) * 2017-11-15 2020-02-11 Taiwan Semiconductor Manufacturing Company, Ltd. Patterning methods for semiconductor devices and structures resulting therefrom
KR102665246B1 (ko) 2018-07-03 2024-05-09 삼성전자주식회사 반도체 장치 및 이의 제조 방법
US10777562B1 (en) * 2019-03-14 2020-09-15 Micron Technology, Inc. Integrated circuity, DRAM circuitry, methods used in forming integrated circuitry, and methods used in forming DRAM circuitry
US11217594B2 (en) * 2019-09-05 2022-01-04 Nanya Technology Corporation Semiconductor device and method for fabricating the same

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US4267632A (en) * 1979-10-19 1981-05-19 Intel Corporation Process for fabricating a high density electrically programmable memory array
US20020134997A1 (en) * 2001-03-23 2002-09-26 Yutaka Ito Semiconductor device
US6528368B1 (en) * 2002-02-26 2003-03-04 Samsung Electronics Co., Ltd. Method for fabricating semiconductor device, and semiconductor device, having storage node contact flugs
CN1540743A (zh) * 1999-03-03 2004-10-27 ������������ʽ���� 半导体集成电路器件及其制造方法
US20050245026A1 (en) * 2004-03-16 2005-11-03 Kim Dong-Chan Method of forming capacitor for semiconductor device

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EP0912996B1 (en) 1996-07-18 2002-01-02 Advanced Micro Devices, Inc. Integrated circuit which uses an etch stop for producing staggered interconnect lines
KR100506101B1 (ko) * 1996-11-14 2006-04-21 텍사스 인스트루먼츠 인코포레이티드 메모리 셀 어레이 제조방법 및 메모리 셀 어레이
US6016000A (en) * 1998-04-22 2000-01-18 Cvc, Inc. Ultra high-speed chip semiconductor integrated circuit interconnect structure and fabrication method using free-space dielectrics
FR2786609B1 (fr) 1998-11-26 2003-10-17 St Microelectronics Sa Circuit integre a capacite interlignes reduite et procede de fabrication associe
JP4911838B2 (ja) * 2001-07-06 2012-04-04 ルネサスエレクトロニクス株式会社 半導体装置およびその製造方法
KR100502410B1 (ko) * 2002-07-08 2005-07-19 삼성전자주식회사 디램 셀들
KR100448899B1 (ko) * 2002-08-20 2004-09-16 삼성전자주식회사 상변환 기억 소자
JP2004228308A (ja) * 2003-01-22 2004-08-12 Matsushita Electric Ind Co Ltd 半導体装置及びその製造方法
KR100532424B1 (ko) 2003-03-18 2005-11-30 삼성전자주식회사 반도체 메모리 장치 및 그 제조방법
US7115993B2 (en) * 2004-01-30 2006-10-03 Tokyo Electron Limited Structure comprising amorphous carbon film and method of forming thereof
JP5172069B2 (ja) * 2004-04-27 2013-03-27 富士通セミコンダクター株式会社 半導体装置
US7829262B2 (en) * 2005-08-31 2010-11-09 Micron Technology, Inc. Method of forming pitch multipled contacts
US7638878B2 (en) * 2006-04-13 2009-12-29 Micron Technology, Inc. Devices and systems including the bit lines and bit line contacts

Patent Citations (5)

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Publication number Priority date Publication date Assignee Title
US4267632A (en) * 1979-10-19 1981-05-19 Intel Corporation Process for fabricating a high density electrically programmable memory array
CN1540743A (zh) * 1999-03-03 2004-10-27 ������������ʽ���� 半导体集成电路器件及其制造方法
US20020134997A1 (en) * 2001-03-23 2002-09-26 Yutaka Ito Semiconductor device
US6528368B1 (en) * 2002-02-26 2003-03-04 Samsung Electronics Co., Ltd. Method for fabricating semiconductor device, and semiconductor device, having storage node contact flugs
US20050245026A1 (en) * 2004-03-16 2005-11-03 Kim Dong-Chan Method of forming capacitor for semiconductor device

Also Published As

Publication number Publication date
US8367482B2 (en) 2013-02-05
TW200822285A (en) 2008-05-16
KR20090057052A (ko) 2009-06-03
JP5532400B2 (ja) 2014-06-25
EP2057676B1 (en) 2019-11-06
WO2008027876A2 (en) 2008-03-06
US20110223761A1 (en) 2011-09-15
US20080054483A1 (en) 2008-03-06
US7960797B2 (en) 2011-06-14
CN101506967A (zh) 2009-08-12
EP2057676A2 (en) 2009-05-13
KR101173723B1 (ko) 2012-08-13
WO2008027876A3 (en) 2008-06-19
JP2010503218A (ja) 2010-01-28
TWI369756B (en) 2012-08-01

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