TWI369756B - Semiconductor devices including fine pitch arrays with staggered contacts and methods for designing and fabricating the same - Google Patents
Semiconductor devices including fine pitch arrays with staggered contacts and methods for designing and fabricating the sameInfo
- Publication number
- TWI369756B TWI369756B TW096132106A TW96132106A TWI369756B TW I369756 B TWI369756 B TW I369756B TW 096132106 A TW096132106 A TW 096132106A TW 96132106 A TW96132106 A TW 96132106A TW I369756 B TWI369756 B TW I369756B
- Authority
- TW
- Taiwan
- Prior art keywords
- fabricating
- designing
- methods
- semiconductor devices
- same
- Prior art date
Links
- 238000003491 array Methods 0.000 title 1
- 238000000034 method Methods 0.000 title 1
- 239000004065 semiconductor Substances 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B99/00—Subject matter not provided for in other groups of this subclass
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
- H01L21/76801—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing
- H01L21/76802—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing by forming openings in dielectrics
- H01L21/76816—Aspects relating to the layout of the pattern or to the size of vias or trenches
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B12/00—Dynamic random access memory [DRAM] devices
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B12/00—Dynamic random access memory [DRAM] devices
- H10B12/30—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells
- H10B12/48—Data lines or contacts therefor
- H10B12/485—Bit line contacts
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
- Electrodes Of Semiconductors (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US11/511,541 US7960797B2 (en) | 2006-08-29 | 2006-08-29 | Semiconductor devices including fine pitch arrays with staggered contacts |
Publications (2)
Publication Number | Publication Date |
---|---|
TW200822285A TW200822285A (en) | 2008-05-16 |
TWI369756B true TWI369756B (en) | 2012-08-01 |
Family
ID=39136779
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
TW096132106A TWI369756B (en) | 2006-08-29 | 2007-08-29 | Semiconductor devices including fine pitch arrays with staggered contacts and methods for designing and fabricating the same |
Country Status (7)
Country | Link |
---|---|
US (2) | US7960797B2 (zh) |
EP (1) | EP2057676B1 (zh) |
JP (1) | JP5532400B2 (zh) |
KR (1) | KR101173723B1 (zh) |
CN (1) | CN101506967B (zh) |
TW (1) | TWI369756B (zh) |
WO (1) | WO2008027876A2 (zh) |
Families Citing this family (20)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR100833201B1 (ko) * | 2007-06-15 | 2008-05-28 | 삼성전자주식회사 | 콘택 플러그 및 배선 라인 일체형 구조의 미세 패턴을가지는 반도체 소자 및 그 제조 방법 |
JP2007103410A (ja) * | 2005-09-30 | 2007-04-19 | Elpida Memory Inc | 密集コンタクトホールを有する半導体デバイス |
KR100834267B1 (ko) * | 2007-05-07 | 2008-05-30 | 주식회사 하이닉스반도체 | 노광 마스크 및 이를 이용한 반도체 소자의 콘택홀 제조방법 |
US7939451B2 (en) * | 2007-06-07 | 2011-05-10 | Macronix International Co., Ltd. | Method for fabricating a pattern |
US8481417B2 (en) | 2007-08-03 | 2013-07-09 | Micron Technology, Inc. | Semiconductor structures including tight pitch contacts and methods to form same |
US8283258B2 (en) * | 2007-08-16 | 2012-10-09 | Micron Technology, Inc. | Selective wet etching of hafnium aluminum oxide films |
US8062971B2 (en) * | 2008-03-19 | 2011-11-22 | Infineon Technologies Ag | Dual damascene process |
KR101409840B1 (ko) * | 2008-06-04 | 2014-06-20 | 삼성전자주식회사 | 반도체 소자 및 그 제조방법 |
US8058732B2 (en) * | 2008-11-20 | 2011-11-15 | Fairchild Semiconductor Corporation | Semiconductor die structures for wafer-level chipscale packaging of power devices, packages and systems for using the same, and methods of making the same |
US8541311B2 (en) * | 2010-12-22 | 2013-09-24 | GlobalFoundries, Inc. | Integrated circuit fabrication methods utilizing embedded hardmask layers for high resolution patterning |
JP2012199381A (ja) * | 2011-03-22 | 2012-10-18 | Toshiba Corp | 半導体装置およびその製造方法 |
US8586478B2 (en) * | 2011-03-28 | 2013-11-19 | Renesas Electronics Corporation | Method of making a semiconductor device |
US9536952B2 (en) | 2014-05-12 | 2017-01-03 | Intersil Americas LLC | Body contact layouts for semiconductor structures |
TWI721231B (zh) * | 2016-11-16 | 2021-03-11 | 日商東京威力科創股份有限公司 | 次解析度基板圖案化方法 |
JP6939497B2 (ja) * | 2017-12-13 | 2021-09-22 | 富士電機株式会社 | 抵抗素子 |
CN108735711B (zh) * | 2017-04-13 | 2021-04-23 | 中芯国际集成电路制造(北京)有限公司 | 一种半导体器件及其制备方法、电子装置 |
US10361158B2 (en) * | 2017-08-29 | 2019-07-23 | Micron Technology, Inc. | Integrated assemblies having structures along a first pitch coupled with structures along a second pitch different from the first pitch |
US10559492B2 (en) | 2017-11-15 | 2020-02-11 | Taiwan Semiconductor Manufacturing Company, Ltd. | Patterning methods for semiconductor devices and structures resulting therefrom |
KR102665246B1 (ko) | 2018-07-03 | 2024-05-09 | 삼성전자주식회사 | 반도체 장치 및 이의 제조 방법 |
US11217594B2 (en) * | 2019-09-05 | 2022-01-04 | Nanya Technology Corporation | Semiconductor device and method for fabricating the same |
Family Cites Families (18)
Publication number | Priority date | Publication date | Assignee | Title |
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US4267632A (en) * | 1979-10-19 | 1981-05-19 | Intel Corporation | Process for fabricating a high density electrically programmable memory array |
DE69709870T2 (de) | 1996-07-18 | 2002-08-22 | Advanced Micro Devices Inc., Austin | Verwendung einer ätzstopschicht in einer integrierten schaltung für die herstellung von versetzt angeordneten leiterbahnen |
KR100506101B1 (ko) * | 1996-11-14 | 2006-04-21 | 텍사스 인스트루먼츠 인코포레이티드 | 메모리 셀 어레이 제조방법 및 메모리 셀 어레이 |
US6016000A (en) * | 1998-04-22 | 2000-01-18 | Cvc, Inc. | Ultra high-speed chip semiconductor integrated circuit interconnect structure and fabrication method using free-space dielectrics |
FR2786609B1 (fr) | 1998-11-26 | 2003-10-17 | St Microelectronics Sa | Circuit integre a capacite interlignes reduite et procede de fabrication associe |
CN100559564C (zh) * | 1999-03-03 | 2009-11-11 | 尔必达存储器株式会社 | 半导体集成电路器件及其制造方法 |
JP2002289815A (ja) | 2001-03-23 | 2002-10-04 | Hitachi Ltd | 半導体記憶装置 |
JP4911838B2 (ja) * | 2001-07-06 | 2012-04-04 | ルネサスエレクトロニクス株式会社 | 半導体装置およびその製造方法 |
KR100450671B1 (ko) * | 2002-02-26 | 2004-10-01 | 삼성전자주식회사 | 스토리지 노드 콘택플러그를 갖는 반도체 소자의 제조방법 |
KR100502410B1 (ko) * | 2002-07-08 | 2005-07-19 | 삼성전자주식회사 | 디램 셀들 |
KR100448899B1 (ko) * | 2002-08-20 | 2004-09-16 | 삼성전자주식회사 | 상변환 기억 소자 |
JP2004228308A (ja) * | 2003-01-22 | 2004-08-12 | Matsushita Electric Ind Co Ltd | 半導体装置及びその製造方法 |
KR100532424B1 (ko) | 2003-03-18 | 2005-11-30 | 삼성전자주식회사 | 반도체 메모리 장치 및 그 제조방법 |
US7115993B2 (en) * | 2004-01-30 | 2006-10-03 | Tokyo Electron Limited | Structure comprising amorphous carbon film and method of forming thereof |
KR100672816B1 (ko) * | 2004-03-16 | 2007-01-22 | 삼성전자주식회사 | 반도체 메모리 장치의 캐패시터 형성방법 |
JP5172069B2 (ja) * | 2004-04-27 | 2013-03-27 | 富士通セミコンダクター株式会社 | 半導体装置 |
US7829262B2 (en) * | 2005-08-31 | 2010-11-09 | Micron Technology, Inc. | Method of forming pitch multipled contacts |
US7638878B2 (en) * | 2006-04-13 | 2009-12-29 | Micron Technology, Inc. | Devices and systems including the bit lines and bit line contacts |
-
2006
- 2006-08-29 US US11/511,541 patent/US7960797B2/en active Active
-
2007
- 2007-08-28 WO PCT/US2007/076970 patent/WO2008027876A2/en active Application Filing
- 2007-08-28 EP EP07841450.5A patent/EP2057676B1/en active Active
- 2007-08-28 CN CN2007800316680A patent/CN101506967B/zh active Active
- 2007-08-28 JP JP2009526863A patent/JP5532400B2/ja active Active
- 2007-08-28 KR KR1020097006151A patent/KR101173723B1/ko active IP Right Grant
- 2007-08-29 TW TW096132106A patent/TWI369756B/zh active
-
2011
- 2011-05-23 US US13/113,468 patent/US8367482B2/en active Active
Also Published As
Publication number | Publication date |
---|---|
JP2010503218A (ja) | 2010-01-28 |
CN101506967B (zh) | 2013-03-13 |
EP2057676B1 (en) | 2019-11-06 |
CN101506967A (zh) | 2009-08-12 |
WO2008027876A2 (en) | 2008-03-06 |
WO2008027876A3 (en) | 2008-06-19 |
KR20090057052A (ko) | 2009-06-03 |
US8367482B2 (en) | 2013-02-05 |
KR101173723B1 (ko) | 2012-08-13 |
JP5532400B2 (ja) | 2014-06-25 |
US7960797B2 (en) | 2011-06-14 |
US20080054483A1 (en) | 2008-03-06 |
TW200822285A (en) | 2008-05-16 |
EP2057676A2 (en) | 2009-05-13 |
US20110223761A1 (en) | 2011-09-15 |
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