JP2010276724A - 多階調フォトマスク、多階調フォトマスクの製造方法、及びパターン転写方法 - Google Patents

多階調フォトマスク、多階調フォトマスクの製造方法、及びパターン転写方法 Download PDF

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Publication number
JP2010276724A
JP2010276724A JP2009127039A JP2009127039A JP2010276724A JP 2010276724 A JP2010276724 A JP 2010276724A JP 2009127039 A JP2009127039 A JP 2009127039A JP 2009127039 A JP2009127039 A JP 2009127039A JP 2010276724 A JP2010276724 A JP 2010276724A
Authority
JP
Japan
Prior art keywords
semi
transparent
film
light
exposure light
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2009127039A
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English (en)
Japanese (ja)
Other versions
JP2010276724A5 (enrdf_load_stackoverflow
Inventor
Noboru Yamaguchi
昇 山口
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hoya Corp
Original Assignee
Hoya Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hoya Corp filed Critical Hoya Corp
Priority to JP2009127039A priority Critical patent/JP2010276724A/ja
Priority to TW099111153A priority patent/TWI461837B/zh
Priority to KR1020100048480A priority patent/KR101171504B1/ko
Priority to CN2010101898165A priority patent/CN101900932B/zh
Publication of JP2010276724A publication Critical patent/JP2010276724A/ja
Publication of JP2010276724A5 publication Critical patent/JP2010276724A5/ja
Pending legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/54—Absorbers, e.g. of opaque materials
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/54—Absorbers, e.g. of opaque materials
    • G03F1/58—Absorbers, e.g. of opaque materials having two or more different absorber layers, e.g. stacked multilayer absorbers
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20—Exposure; Apparatus therefor
    • G03F7/2002—Exposure; Apparatus therefor with visible light or UV light, through an original having an opaque pattern on a transparent support, e.g. film printing, projection printing; by reflection of visible or UV light from an original such as a printed image
    • G03F7/2008—Exposure; Apparatus therefor with visible light or UV light, through an original having an opaque pattern on a transparent support, e.g. film printing, projection printing; by reflection of visible or UV light from an original such as a printed image characterised by the reflectors, diffusers, light or heat filtering means or anti-reflective means used
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
    • H01L21/0271—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers
    • H01L21/0273—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers characterised by the treatment of photoresist layers
    • H01L21/0274—Photolithographic processes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
    • H01L21/0271—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers
    • H01L21/0273—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers characterised by the treatment of photoresist layers
    • H01L21/0274—Photolithographic processes
    • H01L21/0276—Photolithographic processes using an anti-reflective coating

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Preparing Plates And Mask In Photomechanical Process (AREA)
  • Liquid Crystal (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
JP2009127039A 2009-05-26 2009-05-26 多階調フォトマスク、多階調フォトマスクの製造方法、及びパターン転写方法 Pending JP2010276724A (ja)

Priority Applications (4)

Application Number Priority Date Filing Date Title
JP2009127039A JP2010276724A (ja) 2009-05-26 2009-05-26 多階調フォトマスク、多階調フォトマスクの製造方法、及びパターン転写方法
TW099111153A TWI461837B (zh) 2009-05-26 2010-04-09 多調式光罩、多調式光罩之製造方法、及圖案轉印方法
KR1020100048480A KR101171504B1 (ko) 2009-05-26 2010-05-25 다계조 포토마스크, 다계조 포토마스크의 제조 방법, 및 패턴 전사 방법
CN2010101898165A CN101900932B (zh) 2009-05-26 2010-05-26 多色调光掩模、多色调光掩模制造方法以及图案转印方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2009127039A JP2010276724A (ja) 2009-05-26 2009-05-26 多階調フォトマスク、多階調フォトマスクの製造方法、及びパターン転写方法

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP2014027187A Division JP2014115675A (ja) 2014-02-17 2014-02-17 表示装置製造用多階調フォトマスク、表示装置製造用多階調フォトマスクの製造方法、及び表示装置の製造方法

Publications (2)

Publication Number Publication Date
JP2010276724A true JP2010276724A (ja) 2010-12-09
JP2010276724A5 JP2010276724A5 (enrdf_load_stackoverflow) 2012-03-01

Family

ID=43226579

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2009127039A Pending JP2010276724A (ja) 2009-05-26 2009-05-26 多階調フォトマスク、多階調フォトマスクの製造方法、及びパターン転写方法

Country Status (4)

Country Link
JP (1) JP2010276724A (enrdf_load_stackoverflow)
KR (1) KR101171504B1 (enrdf_load_stackoverflow)
CN (1) CN101900932B (enrdf_load_stackoverflow)
TW (1) TWI461837B (enrdf_load_stackoverflow)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2013148892A (ja) * 2011-12-21 2013-08-01 Dainippon Printing Co Ltd 大型位相シフトマスクおよび大型位相シフトマスクの製造方法
CN113249699A (zh) * 2021-05-13 2021-08-13 沈阳仪表科学研究院有限公司 基于磁控溅射技术制备高精密波长渐变滤光片的方法及其采用的装置
JP7570255B2 (ja) 2021-03-04 2024-10-21 株式会社エスケーエレクトロニクス 多階調フォトマスクの製造方法及び多階調フォトマスク

Families Citing this family (8)

* Cited by examiner, † Cited by third party
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CN102426411A (zh) * 2011-07-01 2012-04-25 上海华力微电子有限公司 一种保护掩模板的方法
CN102707575B (zh) * 2012-05-18 2015-02-25 北京京东方光电科技有限公司 掩模板及制造阵列基板的方法
JP5635577B2 (ja) * 2012-09-26 2014-12-03 Hoya株式会社 フォトマスクの製造方法、フォトマスク、パターン転写方法、及びフラットパネルディスプレイの製造方法
JP6157832B2 (ja) * 2012-10-12 2017-07-05 Hoya株式会社 電子デバイスの製造方法、表示装置の製造方法、フォトマスクの製造方法、及びフォトマスク
KR102170761B1 (ko) 2013-07-22 2020-10-27 삼성전자주식회사 반도체 소자의 패턴 형성 방법
JP6586344B2 (ja) * 2015-10-20 2019-10-02 Hoya株式会社 フォトマスクの製造方法、フォトマスク、および、表示装置の製造方法
JP6259509B1 (ja) * 2016-12-28 2018-01-10 株式会社エスケーエレクトロニクス ハーフトーンマスク、フォトマスクブランクス及びハーフトーンマスクの製造方法
KR20210016814A (ko) * 2019-08-05 2021-02-17 주식회사 포트로닉스 천안 3-톤 이상의 마스크 제조 방법

Citations (3)

* Cited by examiner, † Cited by third party
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JP2000181048A (ja) * 1998-12-16 2000-06-30 Sharp Corp フォトマスクおよびその製造方法、並びにそれを用いた露光方法
JP2007249198A (ja) * 2006-02-20 2007-09-27 Hoya Corp ４階調フォトマスクの製造方法、及びフォトマスクブランク
JP2010032737A (ja) * 2008-07-28 2010-02-12 Hoya Corp 多階調フォトマスク及びパターン転写方法

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JP3080023B2 (ja) * 1997-02-20 2000-08-21 日本電気株式会社 露光用フォトマスク
US5935736A (en) * 1997-10-24 1999-08-10 Taiwan Semiconductors Manufacturing Company Ltd. Mask and method to eliminate side-lobe effects in attenuated phase shifting masks
TW363147B (en) * 1997-11-22 1999-07-01 United Microelectronics Corp Phase shifting mask
JP2002365784A (ja) * 2001-06-05 2002-12-18 Sony Corp 多階調マスク、レジストパターンの形成方法、及び光学素子の製造方法
TW200513812A (en) * 2003-09-05 2005-04-16 Schott Ag Attenuating phase shift mask blank and photomask
JP4446395B2 (ja) * 2006-02-02 2010-04-07 Ｈｏｙａ株式会社 グレートーンマスクの欠陥修正方法、及びグレートーンマスク
KR101255616B1 (ko) * 2006-07-28 2013-04-16 삼성디스플레이 주식회사 다중톤 광마스크, 이의 제조방법 및 이를 이용한박막트랜지스터 기판의 제조방법
TWI422962B (zh) * 2006-12-05 2014-01-11 Hoya Corp 灰階光罩之檢查方法、液晶裝置製造用灰階光罩之製造方法以及圖案轉印方法
JP5036328B2 (ja) * 2007-01-24 2012-09-26 Ｈｏｙａ株式会社 グレートーンマスク及びパターン転写方法
JP5036349B2 (ja) * 2007-02-28 2012-09-26 Ｈｏｙａ株式会社 グレートーンマスクの欠陥修正方法及びグレートーンマスクの製造方法
JP5057866B2 (ja) * 2007-07-03 2012-10-24 Ｈｏｙａ株式会社 グレートーンマスクの欠陥修正方法、グレートーンマスクの製造方法及びグレートーンマスク、並びにパターン転写方法
KR20090009618A (ko) * 2007-07-20 2009-01-23 엘지디스플레이 주식회사 3톤 노광 마스크
KR20090044513A (ko) * 2007-10-31 2009-05-07 주식회사 에스앤에스텍 그레이톤 블랭크 마스크 및 그레이톤 포토마스크의제조방법

Patent Citations (3)

* Cited by examiner, † Cited by third party
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JP2000181048A (ja) * 1998-12-16 2000-06-30 Sharp Corp フォトマスクおよびその製造方法、並びにそれを用いた露光方法
JP2007249198A (ja) * 2006-02-20 2007-09-27 Hoya Corp ４階調フォトマスクの製造方法、及びフォトマスクブランク
JP2010032737A (ja) * 2008-07-28 2010-02-12 Hoya Corp 多階調フォトマスク及びパターン転写方法

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2013148892A (ja) * 2011-12-21 2013-08-01 Dainippon Printing Co Ltd 大型位相シフトマスクおよび大型位相シフトマスクの製造方法
JP7570255B2 (ja) 2021-03-04 2024-10-21 株式会社エスケーエレクトロニクス 多階調フォトマスクの製造方法及び多階調フォトマスク
CN113249699A (zh) * 2021-05-13 2021-08-13 沈阳仪表科学研究院有限公司 基于磁控溅射技术制备高精密波长渐变滤光片的方法及其采用的装置
CN113249699B (zh) * 2021-05-13 2022-11-04 沈阳仪表科学研究院有限公司 基于磁控溅射技术制备高精密波长渐变滤光片的方法及其采用的装置

Also Published As

Publication number Publication date
TWI461837B (zh) 2014-11-21
TW201104353A (en) 2011-02-01
KR101171504B1 (ko) 2012-08-06
KR20100127718A (ko) 2010-12-06
CN101900932B (zh) 2012-06-06
CN101900932A (zh) 2010-12-01

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