JP2010250341A - 液晶表示装置、及び電子機器 - Google Patents

液晶表示装置、及び電子機器 Download PDF

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Publication number
JP2010250341A
JP2010250341A JP2010135678A JP2010135678A JP2010250341A JP 2010250341 A JP2010250341 A JP 2010250341A JP 2010135678 A JP2010135678 A JP 2010135678A JP 2010135678 A JP2010135678 A JP 2010135678A JP 2010250341 A JP2010250341 A JP 2010250341A
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Japan
Prior art keywords
liquid crystal
semiconductor
display device
film
tft
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Application number
JP2010135678A
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English (en)
Japanese (ja)
Inventor
Shunpei Yamazaki
舜平 山崎
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Semiconductor Energy Laboratory Co Ltd
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Semiconductor Energy Laboratory Co Ltd
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Publication date
Application filed by Semiconductor Energy Laboratory Co Ltd filed Critical Semiconductor Energy Laboratory Co Ltd
Priority to JP2010135678A priority Critical patent/JP2010250341A/ja
Publication of JP2010250341A publication Critical patent/JP2010250341A/ja
Withdrawn legal-status Critical Current

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JP2010135678A 2003-07-14 2010-06-15 液晶表示装置、及び電子機器 Withdrawn JP2010250341A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2010135678A JP2010250341A (ja) 2003-07-14 2010-06-15 液晶表示装置、及び電子機器

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2003273869 2003-07-14
JP2010135678A JP2010250341A (ja) 2003-07-14 2010-06-15 液晶表示装置、及び電子機器

Related Parent Applications (1)

Application Number Title Priority Date Filing Date
JP2004182073A Division JP4748954B2 (ja) 2003-07-14 2004-06-21 液晶表示装置

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP2011114467A Division JP5250662B2 (ja) 2003-07-14 2011-05-23 電子機器

Publications (1)

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JP2010250341A true JP2010250341A (ja) 2010-11-04

Family

ID=34587140

Family Applications (3)

Application Number Title Priority Date Filing Date
JP2010135678A Withdrawn JP2010250341A (ja) 2003-07-14 2010-06-15 液晶表示装置、及び電子機器
JP2011114467A Expired - Fee Related JP5250662B2 (ja) 2003-07-14 2011-05-23 電子機器
JP2012255129A Expired - Fee Related JP5288666B2 (ja) 2003-07-14 2012-11-21 表示装置

Family Applications After (2)

Application Number Title Priority Date Filing Date
JP2011114467A Expired - Fee Related JP5250662B2 (ja) 2003-07-14 2011-05-23 電子機器
JP2012255129A Expired - Fee Related JP5288666B2 (ja) 2003-07-14 2012-11-21 表示装置

Country Status (2)

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JP (3) JP2010250341A (zh)
CN (2) CN100474084C (zh)

Families Citing this family (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP3614442A3 (en) 2005-09-29 2020-03-25 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device having oxide semiconductor layer and manufactoring method thereof
KR101252001B1 (ko) 2006-06-15 2013-04-08 삼성디스플레이 주식회사 액정 표시 장치 및 그 제조 방법
US7738050B2 (en) * 2007-07-06 2010-06-15 Semiconductor Energy Laboratory Co., Ltd Liquid crystal display device
US7611930B2 (en) * 2007-08-17 2009-11-03 Semiconductor Energy Laboratory Co., Ltd. Method of manufacturing display device
CN103985718B (zh) 2008-09-19 2019-03-22 株式会社半导体能源研究所 显示装置
KR102391280B1 (ko) 2009-03-12 2022-04-28 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치
TWI556323B (zh) 2009-03-13 2016-11-01 半導體能源研究所股份有限公司 半導體裝置及該半導體裝置的製造方法
US8338226B2 (en) * 2009-04-02 2012-12-25 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing semiconductor device
US8778745B2 (en) * 2010-06-29 2014-07-15 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing semiconductor device
KR20130139438A (ko) 2012-06-05 2013-12-23 삼성디스플레이 주식회사 박막 트랜지스터 기판
KR102358093B1 (ko) * 2012-06-29 2022-02-08 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치의 제작 방법
KR102032962B1 (ko) 2012-10-26 2019-10-17 삼성디스플레이 주식회사 박막 트랜지스터 표시판 및 그 제조 방법
ES2952765T3 (es) * 2016-04-01 2023-11-06 Nitto Denko Corp Organo de regulación de luz de cristal líquido y elemento de regulación de luz de cristal líquido

Citations (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH04206532A (ja) * 1990-11-30 1992-07-28 Hitachi Ltd 薄膜半導体装置とその製造方法及び製造装置並びに画像処理装置
JPH04266019A (ja) * 1991-02-20 1992-09-22 Canon Inc 成膜方法
JPH06196701A (ja) * 1992-10-07 1994-07-15 Sharp Corp 薄膜トランジスタ及びその製造方法
JPH07273347A (ja) * 1994-03-31 1995-10-20 Sony Corp 薄膜トランジスタおよびその製造方法
JPH0843858A (ja) * 1994-07-29 1996-02-16 Canon Inc 画像表示装置及びその製造方法
JPH08339965A (ja) * 1995-02-09 1996-12-24 Seiko Epson Corp 結晶性半導体膜の形成方法
JPH1083964A (ja) * 1996-09-05 1998-03-31 Nec Corp ＳｉＧｅ薄膜の成膜方法
JPH1124105A (ja) * 1997-07-01 1999-01-29 Semiconductor Energy Lab Co Ltd アクティブマトリクス型表示装置およびその製造方法
JPH11133448A (ja) * 1997-10-27 1999-05-21 Canon Inc 表示装置用基板及び液晶表示装置及び投射型液晶表示装置
JPH11223833A (ja) * 1988-05-17 1999-08-17 Seiko Epson Corp アクティブマトリクスパネル及びビューファインダー
JP2000148067A (ja) * 1998-11-12 2000-05-26 Sharp Corp データ信号線駆動回路および画像表示装置
JP2002014628A (ja) * 2000-04-27 2002-01-18 Semiconductor Energy Lab Co Ltd 半導体装置およびその作製方法
JP2002305297A (ja) * 2001-04-09 2002-10-18 Semiconductor Energy Lab Co Ltd 半導体装置およびその作製方法
JP2004504721A (ja) * 2000-07-18 2004-02-12 コーニンクレッカ　フィリップス　エレクトロニクス　エヌ　ヴィ 薄膜トランジスタ及びその製造方法

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS56122123A (en) * 1980-03-03 1981-09-25 Shunpei Yamazaki Semiamorphous semiconductor
JPH0783460B2 (ja) * 1987-01-08 1995-09-06 三洋電機株式会社 輝度制御回路
JPH01309379A (ja) * 1988-06-07 1989-12-13 Sumitomo Metal Ind Ltd 薄膜半導体素子
JPH04253342A (ja) * 1991-01-29 1992-09-09 Oki Electric Ind Co Ltd 薄膜トランジスタアレイ基板
US6271055B1 (en) * 1997-03-10 2001-08-07 Canon Kabushiki Kaisha Process for manufacturing semiconductor element using non-monocrystalline semiconductor layers of first and second conductivity types and amorphous and microcrystalline I-type semiconductor layers
JP2001326360A (ja) * 2000-05-18 2001-11-22 Sharp Corp アクティブマトリクス基板の製造方法およびアクティブマトリクス基板および薄膜電界効果トランジスタの製造方法

Patent Citations (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH11223833A (ja) * 1988-05-17 1999-08-17 Seiko Epson Corp アクティブマトリクスパネル及びビューファインダー
JPH04206532A (ja) * 1990-11-30 1992-07-28 Hitachi Ltd 薄膜半導体装置とその製造方法及び製造装置並びに画像処理装置
JPH04266019A (ja) * 1991-02-20 1992-09-22 Canon Inc 成膜方法
JPH06196701A (ja) * 1992-10-07 1994-07-15 Sharp Corp 薄膜トランジスタ及びその製造方法
JPH07273347A (ja) * 1994-03-31 1995-10-20 Sony Corp 薄膜トランジスタおよびその製造方法
JPH0843858A (ja) * 1994-07-29 1996-02-16 Canon Inc 画像表示装置及びその製造方法
JPH08339965A (ja) * 1995-02-09 1996-12-24 Seiko Epson Corp 結晶性半導体膜の形成方法
JPH1083964A (ja) * 1996-09-05 1998-03-31 Nec Corp ＳｉＧｅ薄膜の成膜方法
JPH1124105A (ja) * 1997-07-01 1999-01-29 Semiconductor Energy Lab Co Ltd アクティブマトリクス型表示装置およびその製造方法
JPH11133448A (ja) * 1997-10-27 1999-05-21 Canon Inc 表示装置用基板及び液晶表示装置及び投射型液晶表示装置
JP2000148067A (ja) * 1998-11-12 2000-05-26 Sharp Corp データ信号線駆動回路および画像表示装置
JP2002014628A (ja) * 2000-04-27 2002-01-18 Semiconductor Energy Lab Co Ltd 半導体装置およびその作製方法
JP2004504721A (ja) * 2000-07-18 2004-02-12 コーニンクレッカ　フィリップス　エレクトロニクス　エヌ　ヴィ 薄膜トランジスタ及びその製造方法
JP2002305297A (ja) * 2001-04-09 2002-10-18 Semiconductor Energy Lab Co Ltd 半導体装置およびその作製方法

Also Published As

Publication number Publication date
JP5288666B2 (ja) 2013-09-11
CN1577027A (zh) 2005-02-09
CN100474084C (zh) 2009-04-01
CN101483180A (zh) 2009-07-15
CN101483180B (zh) 2011-11-16
JP5250662B2 (ja) 2013-07-31
JP2013047852A (ja) 2013-03-07
JP2011203746A (ja) 2011-10-13

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