JP2010212415A - 基板処理方法 - Google Patents
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- JP2010212415A JP2010212415A JP2009056336A JP2009056336A JP2010212415A JP 2010212415 A JP2010212415 A JP 2010212415A JP 2009056336 A JP2009056336 A JP 2009056336A JP 2009056336 A JP2009056336 A JP 2009056336A JP 2010212415 A JP2010212415 A JP 2010212415A
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- 239000000758 substrate Substances 0.000 title claims abstract description 57
- 238000003672 processing method Methods 0.000 title claims abstract description 47
- 238000005530 etching Methods 0.000 claims description 64
- 238000000034 method Methods 0.000 claims description 47
- 238000004380 ashing Methods 0.000 claims description 18
- 229910052710 silicon Inorganic materials 0.000 claims description 2
- 239000010703 silicon Substances 0.000 claims description 2
- 229920002120 photoresistant polymer Polymers 0.000 abstract description 17
- 239000007789 gas Substances 0.000 description 33
- 150000002500 ions Chemical class 0.000 description 23
- 230000006870 function Effects 0.000 description 15
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- 238000003860 storage Methods 0.000 description 6
- 238000005229 chemical vapour deposition Methods 0.000 description 5
- 239000003507 refrigerant Substances 0.000 description 5
- 238000000059 patterning Methods 0.000 description 4
- 238000001020 plasma etching Methods 0.000 description 4
- 239000004065 semiconductor Substances 0.000 description 4
- 238000001816 cooling Methods 0.000 description 3
- 239000004020 conductor Substances 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 239000001307 helium Substances 0.000 description 2
- 229910052734 helium Inorganic materials 0.000 description 2
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 description 2
- 238000001459 lithography Methods 0.000 description 2
- 239000012528 membrane Substances 0.000 description 2
- 239000001301 oxygen Substances 0.000 description 2
- 229910052760 oxygen Inorganic materials 0.000 description 2
- 238000005192 partition Methods 0.000 description 2
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 2
- 238000001179 sorption measurement Methods 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 238000005452 bending Methods 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 210000000078 claw Anatomy 0.000 description 1
- 239000012141 concentrate Substances 0.000 description 1
- 239000000498 cooling water Substances 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 238000007599 discharging Methods 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 239000004973 liquid crystal related substance Substances 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 239000002052 molecular layer Substances 0.000 description 1
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 230000000149 penetrating effect Effects 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 229920005591 polysilicon Polymers 0.000 description 1
- 239000011347 resin Substances 0.000 description 1
- 229920005989 resin Polymers 0.000 description 1
- 229910010271 silicon carbide Inorganic materials 0.000 description 1
- LIVNPJMFVYWSIS-UHFFFAOYSA-N silicon monoxide Chemical compound [Si-]#[O+] LIVNPJMFVYWSIS-UHFFFAOYSA-N 0.000 description 1
- 239000002210 silicon-based material Substances 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
- H01L21/321—After treatment
- H01L21/3213—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer
- H01L21/32139—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer using masks
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
- H01L21/033—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising inorganic layers
- H01L21/0334—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising inorganic layers characterised by their size, orientation, disposition, behaviour, shape, in horizontal or vertical plane
- H01L21/0337—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising inorganic layers characterised by their size, orientation, disposition, behaviour, shape, in horizontal or vertical plane characterised by the process involved to create the mask, e.g. lift-off masks, sidewalls, or to modify the mask, e.g. pre-treatment, post-treatment
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3105—After-treatment
- H01L21/311—Etching the insulating layers by chemical or physical means
- H01L21/31105—Etching inorganic layers
- H01L21/31111—Etching inorganic layers by chemical means
- H01L21/31116—Etching inorganic layers by chemical means by dry-etching
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
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- Y10T428/00—Stock material or miscellaneous articles
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T428/00—Stock material or miscellaneous articles
- Y10T428/24—Structurally defined web or sheet [e.g., overall dimension, etc.]
- Y10T428/24479—Structurally defined web or sheet [e.g., overall dimension, etc.] including variation in thickness
- Y10T428/24612—Composite web or sheet
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
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- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T428/00—Stock material or miscellaneous articles
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- Y10T428/24802—Discontinuous or differential coating, impregnation or bond [e.g., artwork, printing, retouched photograph, etc.]
- Y10T428/24917—Discontinuous or differential coating, impregnation or bond [e.g., artwork, printing, retouched photograph, etc.] including metal layer
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T428/00—Stock material or miscellaneous articles
- Y10T428/24—Structurally defined web or sheet [e.g., overall dimension, etc.]
- Y10T428/24942—Structurally defined web or sheet [e.g., overall dimension, etc.] including components having same physical characteristic in differing degree
- Y10T428/2495—Thickness [relative or absolute]
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- Microelectronics & Electronic Packaging (AREA)
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- Inorganic Chemistry (AREA)
- General Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Drying Of Semiconductors (AREA)
Abstract
【解決手段】被処理膜37と、被処理膜37の上に形成された複数の小幅のライン38aからなるフォトレジスト膜と、各ライン38aの間において露出する被処理膜37及びライン38aを覆うSi酸化膜40とを有するウエハにおいて、Si酸化膜40にエッチングを施してフォトレジスト膜の各ライン38aと被処理膜37を露出させ、露出したフォトレジスト膜を選択的に除去し、さらに、残存するSi酸化膜40(一対のライン42a,42b)にエッチングを施す。
【選択図】図3
Description
10 プラズマ処理装置
12 サセプタ
18 第1の高周波電源
37 被処理膜
38 フォトレジスト膜
38a,40a,42a,42b,46a,46b ライン
39,43,44 開口部
40,45 Si酸化膜
41 空間
Claims (8)
- 処理対象膜と、該処理対象膜の上に形成された複数の小幅の線状部分からなる有機膜と、各前記線状部分の間において露出する前記処理対象膜及び前記線状部分を覆う硬質膜とを有する基板を処理する基板処理方法であって、
前記硬質膜にエッチングを施して前記有機膜及び各前記線状部分の間の前記処理対象膜を露出させる第1のエッチングステップと、
前記露出した有機膜を選択的に除去するアッシングステップと、
残存する前記硬質膜にエッチングを施す第2のエッチングステップとを有することを特徴とする基板処理方法。 - 前記第2のエッチングステップにおいてエッチングが施された後に残存する前記硬質膜をマスクとして前記処理対象膜にエッチングを施す第3のエッチングステップをさらに有することを特徴とする請求項1記載の基板処理方法。
- 前記第2のエッチングステップは所定の時間だけ継続して実行されることを特徴とする請求項1又は2記載の基板処理方法。
- 前記基板はイオン引き込み用の高周波電力が印加される載置台に載置され、
前記第2のエッチングステップでは、100W以下の前記イオン引き込み用の高周波電力が前記載置台に印加されることを特徴とする請求項1乃至3のいずれか1項に記載の基板処理方法。 - 前記アッシングステップ及び前記第2のエッチングステップを繰り返すことを特徴とする請求項1乃至4のいずれか1項に記載の基板処理方法。
- 前記硬質膜はシリコンを含む酸化膜からなることを特徴とする請求項1乃至5のいずれか1項に記載の基板処理方法。
- 処理対象膜と、該処理対象膜の上に形成された第1の硬質膜と、該第1の硬質膜の上に形成された複数の小幅の線状部分からなる有機膜と、各前記線状部分の間において露出する前記第1の硬質膜及び前記線状部分を覆う第2の硬質膜とを有する基板を処理する基板処理方法であって、
前記第2の硬質膜にエッチングを施して前記有機膜及び各前記線状部分の間の前記第1の硬質膜を露出させる第1のエッチングステップと、
前記露出した有機膜を選択的に除去するアッシングステップと、
残存する前記第2の硬質膜及び前記露出した第1の硬質膜にエッチングを施す第2のエッチングステップとを有することを特徴とする基板処理方法。 - 前記第2のエッチングステップにおいてエッチングが施された後に残存する前記第2の硬質膜及び前記第1の硬質膜をマスクとして前記処理対象膜にエッチングを施す第3のエッチングステップをさらに有することを特徴とする請求項7記載の基板処理方法。
Priority Applications (5)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2009056336A JP5238556B2 (ja) | 2009-03-10 | 2009-03-10 | 基板処理方法 |
KR1020100021034A KR101565174B1 (ko) | 2009-03-10 | 2010-03-09 | 기판 처리 방법 |
TW099106763A TWI489545B (zh) | 2009-03-10 | 2010-03-09 | Substrate handling method |
CN201010132410.3A CN101833239B (zh) | 2009-03-10 | 2010-03-10 | 基板处理方法 |
US12/721,006 US8383521B2 (en) | 2009-03-10 | 2010-03-10 | Substrate processing method |
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JP2009056336A JP5238556B2 (ja) | 2009-03-10 | 2009-03-10 | 基板処理方法 |
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JP2010212415A true JP2010212415A (ja) | 2010-09-24 |
JP5238556B2 JP5238556B2 (ja) | 2013-07-17 |
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JP2009056336A Expired - Fee Related JP5238556B2 (ja) | 2009-03-10 | 2009-03-10 | 基板処理方法 |
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US (1) | US8383521B2 (ja) |
JP (1) | JP5238556B2 (ja) |
KR (1) | KR101565174B1 (ja) |
CN (1) | CN101833239B (ja) |
TW (1) | TWI489545B (ja) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2014045077A (ja) * | 2012-08-27 | 2014-03-13 | Tokyo Electron Ltd | プラズマエッチング方法及びプラズマエッチング装置 |
US9156307B2 (en) | 2012-08-27 | 2015-10-13 | Tokyo Electron Limited | Plasma etching method and plasma etching apparatus |
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US11251608B2 (en) | 2010-07-13 | 2022-02-15 | Raycap S.A. | Overvoltage protection system for wireless communication systems |
US8314033B2 (en) * | 2010-09-24 | 2012-11-20 | Applied Materials, Inc. | Method of patterning a low-k dielectric film |
KR101988061B1 (ko) | 2013-08-30 | 2019-06-11 | 현대자동차주식회사 | 차량용 도어 커튼 어셈블리 |
WO2016075787A1 (ja) * | 2014-11-13 | 2016-05-19 | 新電元工業株式会社 | 半導体装置の製造方法及びガラス被膜形成装置 |
US9971119B2 (en) | 2015-11-03 | 2018-05-15 | Raycap Intellectual Property Ltd. | Modular fiber optic cable splitter |
US10802237B2 (en) | 2015-11-03 | 2020-10-13 | Raycap S.A. | Fiber optic cable management system |
KR101707442B1 (ko) | 2015-11-30 | 2017-02-17 | 주식회사 서연이화 | 차량용 도어 커튼 장치 |
WO2018136812A1 (en) | 2017-01-20 | 2018-07-26 | Raycap S.A. | Power transmission system for wireless communication systems |
CN107464749B (zh) * | 2017-07-28 | 2021-09-17 | 北京北方华创微电子装备有限公司 | 蚀刻方法和蚀刻系统 |
JP2019204815A (ja) * | 2018-05-21 | 2019-11-28 | 東京エレクトロン株式会社 | 基板処理方法及び基板処理装置 |
US10971928B2 (en) | 2018-08-28 | 2021-04-06 | Raycap Ip Assets Ltd | Integrated overvoltage protection and monitoring system |
CN111293041B (zh) * | 2018-12-06 | 2024-07-23 | 东京毅力科创株式会社 | 蚀刻处理方法和基板处理装置 |
US11677164B2 (en) | 2019-09-25 | 2023-06-13 | Raycap Ip Assets Ltd | Hybrid antenna distribution unit |
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- 2009-03-10 JP JP2009056336A patent/JP5238556B2/ja not_active Expired - Fee Related
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- 2010-03-09 KR KR1020100021034A patent/KR101565174B1/ko active IP Right Grant
- 2010-03-09 TW TW099106763A patent/TWI489545B/zh not_active IP Right Cessation
- 2010-03-10 CN CN201010132410.3A patent/CN101833239B/zh not_active Expired - Fee Related
- 2010-03-10 US US12/721,006 patent/US8383521B2/en active Active
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JPH03270227A (ja) * | 1990-03-20 | 1991-12-02 | Mitsubishi Electric Corp | 微細パターンの形成方法 |
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JP2014045077A (ja) * | 2012-08-27 | 2014-03-13 | Tokyo Electron Ltd | プラズマエッチング方法及びプラズマエッチング装置 |
US9156307B2 (en) | 2012-08-27 | 2015-10-13 | Tokyo Electron Limited | Plasma etching method and plasma etching apparatus |
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US20100233883A1 (en) | 2010-09-16 |
US8383521B2 (en) | 2013-02-26 |
CN101833239A (zh) | 2010-09-15 |
CN101833239B (zh) | 2013-06-05 |
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