JP2010211206A - Ｔｆｔ−ｌｃｄアレイ基板及びその製造方法 - Google Patents

Ｔｆｔ−ｌｃｄアレイ基板及びその製造方法 Download PDF

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Publication number
JP2010211206A
JP2010211206A JP2010048930A JP2010048930A JP2010211206A JP 2010211206 A JP2010211206 A JP 2010211206A JP 2010048930 A JP2010048930 A JP 2010048930A JP 2010048930 A JP2010048930 A JP 2010048930A JP 2010211206 A JP2010211206 A JP 2010211206A
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JP
Japan
Prior art keywords
thin film
region
tft
photoresist
electrode
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2010048930A
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English (en)
Japanese (ja)
Other versions
JP2010211206A5 (enExample
Inventor
應龍 ▲黄▼
Yinglong Huang
Heecheol Kim
熙哲 金
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Beijing BOE Optoelectronics Technology Co Ltd
Original Assignee
Beijing BOE Optoelectronics Technology Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Beijing BOE Optoelectronics Technology Co Ltd filed Critical Beijing BOE Optoelectronics Technology Co Ltd
Publication of JP2010211206A publication Critical patent/JP2010211206A/ja
Publication of JP2010211206A5 publication Critical patent/JP2010211206A5/ja
Pending legal-status Critical Current

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Classifications

    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G02F1/1362—Active matrix addressed cells
    • G02F1/136209—Light shielding layers, e.g. black matrix, incorporated in the active matrix substrate, e.g. structurally associated with the switching element
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G02F1/1362—Active matrix addressed cells
    • G02F1/136286—Wiring, e.g. gate line, drain line
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/441—Interconnections, e.g. scanning lines
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/60—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs wherein the TFTs are in active matrices
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F2201/00—Constructional arrangements not provided for in groups G02F1/00 - G02F7/00
    • G02F2201/40—Arrangements for improving the aperture ratio

Landscapes

  • Physics & Mathematics (AREA)
  • Nonlinear Science (AREA)
  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Mathematical Physics (AREA)
  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • General Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Liquid Crystal (AREA)
  • Thin Film Transistor (AREA)
JP2010048930A 2009-03-06 2010-03-05 Ｔｆｔ−ｌｃｄアレイ基板及びその製造方法 Pending JP2010211206A (ja)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CN200910079295.5A CN101825816A (zh) 2009-03-06 2009-03-06 Tft-lcd阵列基板及其制造方法

Publications (2)

Publication Number Publication Date
JP2010211206A true JP2010211206A (ja) 2010-09-24
JP2010211206A5 JP2010211206A5 (enExample) 2013-04-11

Family

ID=42677961

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2010048930A Pending JP2010211206A (ja) 2009-03-06 2010-03-05 Ｔｆｔ−ｌｃｄアレイ基板及びその製造方法

Country Status (4)

Country Link
US (1) US8405788B2 (enExample)
JP (1) JP2010211206A (enExample)
KR (1) KR20100100693A (enExample)
CN (1) CN101825816A (enExample)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP2400800A2 (en) 2010-06-25 2011-12-28 NTT DoCoMo, Inc. Network apparatus

Families Citing this family (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101925983B1 (ko) * 2011-12-14 2018-12-07 엘지디스플레이 주식회사 액정표시소자 및 그 제조방법
CN102651340B (zh) * 2011-12-31 2014-11-19 京东方科技集团股份有限公司 一种tft阵列基板的制造方法
CN102879962A (zh) * 2012-09-28 2013-01-16 京东方科技集团股份有限公司 阵列基板及显示装置
CN102955635B (zh) * 2012-10-15 2015-11-11 北京京东方光电科技有限公司 一种电容式内嵌触摸屏及显示装置
CN102937853B (zh) 2012-10-19 2015-10-14 北京京东方光电科技有限公司 一种电容式内嵌触摸屏、其驱动方法及显示装置
CN103472943A (zh) * 2013-08-06 2013-12-25 福建华映显示科技有限公司 内嵌式触控显示面板
CN103676380A (zh) * 2013-12-25 2014-03-26 合肥京东方光电科技有限公司 阵列基板、显示面板及其驱动方法
CN103744245A (zh) * 2013-12-31 2014-04-23 深圳市华星光电技术有限公司 一种液晶显示器阵列基板及相应的液晶显示器
CN104269412B (zh) * 2014-09-19 2017-08-25 昆山龙腾光电有限公司 Tft阵列基板、tft阵列基板的制作方法及显示装置
CN108428705A (zh) * 2018-04-09 2018-08-21 京东方科技集团股份有限公司 一种阵列基板及其制备方法、显示面板、显示装置
CN112540484B (zh) * 2020-11-24 2022-07-05 惠科股份有限公司 一种显示面板和显示装置
CN113948458B (zh) * 2021-10-18 2024-04-30 昆山龙腾光电股份有限公司 阵列基板及其制作方法
CN114994992B (zh) * 2022-05-11 2023-10-20 京东方科技集团股份有限公司 显示面板及显示装置
CN116088211A (zh) * 2023-01-03 2023-05-09 信利（惠州）智能显示有限公司 液晶显示面板与液晶显示装置

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH10268353A (ja) * 1997-03-27 1998-10-09 Advanced Display:Kk 電気光学素子の製法
JP2005284255A (ja) * 2004-03-30 2005-10-13 Lg Philips Lcd Co Ltd 液晶表示素子
JP2006189846A (ja) * 2005-01-03 2006-07-20 Samsung Electronics Co Ltd アレイ基板及びそれを有する表示パネル
JP2008003610A (ja) * 2006-06-23 2008-01-10 Beijing Boe Optoelectronics Technology Co Ltd 薄膜トランジスタ液晶ディスプレイのアレイ基板構造及びその製造方法
JP2008009360A (ja) * 2006-06-27 2008-01-17 Lg Phillips Lcd Co Ltd 液晶表示装置用アレイ基板及びその製造方法

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TW452669B (en) * 1999-03-18 2001-09-01 Sanyo Electric Co Active matrix type display device
KR100900541B1 (ko) * 2002-11-14 2009-06-02 삼성전자주식회사 액정 표시 장치용 박막 트랜지스터 기판
KR20070004229A (ko) * 2005-07-04 2007-01-09 삼성전자주식회사 박막트랜지스터기판 및 이의 제조방법
CN101382679B (zh) * 2007-09-07 2012-02-08 群康科技(深圳)有限公司 液晶显示面板

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH10268353A (ja) * 1997-03-27 1998-10-09 Advanced Display:Kk 電気光学素子の製法
JP2005284255A (ja) * 2004-03-30 2005-10-13 Lg Philips Lcd Co Ltd 液晶表示素子
JP2006189846A (ja) * 2005-01-03 2006-07-20 Samsung Electronics Co Ltd アレイ基板及びそれを有する表示パネル
JP2008003610A (ja) * 2006-06-23 2008-01-10 Beijing Boe Optoelectronics Technology Co Ltd 薄膜トランジスタ液晶ディスプレイのアレイ基板構造及びその製造方法
JP2008009360A (ja) * 2006-06-27 2008-01-17 Lg Phillips Lcd Co Ltd 液晶表示装置用アレイ基板及びその製造方法

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP2400800A2 (en) 2010-06-25 2011-12-28 NTT DoCoMo, Inc. Network apparatus

Also Published As

Publication number Publication date
US20100225860A1 (en) 2010-09-09
US8405788B2 (en) 2013-03-26
CN101825816A (zh) 2010-09-08
KR20100100693A (ko) 2010-09-15

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