KR20100100693A - Ｔｆｔ-ｌｃｄ 어레이 기판 및 그 제조 방법 - Google Patents

Ｔｆｔ-ｌｃｄ 어레이 기판 및 그 제조 방법 Download PDF

Info

Publication number
KR20100100693A
KR20100100693A KR1020100019818A KR20100019818A KR20100100693A KR 20100100693 A KR20100100693 A KR 20100100693A KR 1020100019818 A KR1020100019818 A KR 1020100019818A KR 20100019818 A KR20100019818 A KR 20100019818A KR 20100100693 A KR20100100693 A KR 20100100693A
Authority
KR
South Korea
Prior art keywords
thin film
region
photoresist
line
tft
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
KR1020100019818A
Other languages
English (en)
Korean (ko)
Inventor
잉롱 황
희철 김
Original Assignee
베이징 비오이 옵토일렉트로닉스 테크놀로지 컴퍼니 리미티드
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 베이징 비오이 옵토일렉트로닉스 테크놀로지 컴퍼니 리미티드 filed Critical 베이징 비오이 옵토일렉트로닉스 테크놀로지 컴퍼니 리미티드
Publication of KR20100100693A publication Critical patent/KR20100100693A/ko
Ceased legal-status Critical Current

Links

Images

Classifications

    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G02F1/1362—Active matrix addressed cells
    • G02F1/136209—Light shielding layers, e.g. black matrix, incorporated in the active matrix substrate, e.g. structurally associated with the switching element
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G02F1/1362—Active matrix addressed cells
    • G02F1/136286—Wiring, e.g. gate line, drain line
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/441—Interconnections, e.g. scanning lines
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/60—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs wherein the TFTs are in active matrices
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F2201/00—Constructional arrangements not provided for in groups G02F1/00 - G02F7/00
    • G02F2201/40—Arrangements for improving the aperture ratio

Landscapes

  • Physics & Mathematics (AREA)
  • Nonlinear Science (AREA)
  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Mathematical Physics (AREA)
  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • General Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Liquid Crystal (AREA)
  • Thin Film Transistor (AREA)
KR1020100019818A 2009-03-06 2010-03-05 Ｔｆｔ-ｌｃｄ 어레이 기판 및 그 제조 방법 Ceased KR20100100693A (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
CN200910079295.5A CN101825816A (zh) 2009-03-06 2009-03-06 Tft-lcd阵列基板及其制造方法
CN200910079295.5 2009-03-06

Publications (1)

Publication Number Publication Date
KR20100100693A true KR20100100693A (ko) 2010-09-15

Family

ID=42677961

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020100019818A Ceased KR20100100693A (ko) 2009-03-06 2010-03-05 Ｔｆｔ-ｌｃｄ 어레이 기판 및 그 제조 방법

Country Status (4)

Country Link
US (1) US8405788B2 (enExample)
JP (1) JP2010211206A (enExample)
KR (1) KR20100100693A (enExample)
CN (1) CN101825816A (enExample)

Families Citing this family (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2012029268A (ja) 2010-06-25 2012-02-09 Ntt Docomo Inc ネットワーク装置
KR101925983B1 (ko) * 2011-12-14 2018-12-07 엘지디스플레이 주식회사 액정표시소자 및 그 제조방법
CN102651340B (zh) * 2011-12-31 2014-11-19 京东方科技集团股份有限公司 一种tft阵列基板的制造方法
CN102879962A (zh) * 2012-09-28 2013-01-16 京东方科技集团股份有限公司 阵列基板及显示装置
CN102955635B (zh) * 2012-10-15 2015-11-11 北京京东方光电科技有限公司 一种电容式内嵌触摸屏及显示装置
CN102937853B (zh) 2012-10-19 2015-10-14 北京京东方光电科技有限公司 一种电容式内嵌触摸屏、其驱动方法及显示装置
CN103472943A (zh) * 2013-08-06 2013-12-25 福建华映显示科技有限公司 内嵌式触控显示面板
CN103676380A (zh) * 2013-12-25 2014-03-26 合肥京东方光电科技有限公司 阵列基板、显示面板及其驱动方法
CN103744245A (zh) * 2013-12-31 2014-04-23 深圳市华星光电技术有限公司 一种液晶显示器阵列基板及相应的液晶显示器
CN104269412B (zh) * 2014-09-19 2017-08-25 昆山龙腾光电有限公司 Tft阵列基板、tft阵列基板的制作方法及显示装置
CN108428705A (zh) * 2018-04-09 2018-08-21 京东方科技集团股份有限公司 一种阵列基板及其制备方法、显示面板、显示装置
CN112540484B (zh) * 2020-11-24 2022-07-05 惠科股份有限公司 一种显示面板和显示装置
CN113948458B (zh) * 2021-10-18 2024-04-30 昆山龙腾光电股份有限公司 阵列基板及其制作方法
CN114994992B (zh) * 2022-05-11 2023-10-20 京东方科技集团股份有限公司 显示面板及显示装置
CN116088211A (zh) * 2023-01-03 2023-05-09 信利（惠州）智能显示有限公司 液晶显示面板与液晶显示装置

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3208658B2 (ja) * 1997-03-27 2001-09-17 株式会社アドバンスト・ディスプレイ 電気光学素子の製法
TW452669B (en) * 1999-03-18 2001-09-01 Sanyo Electric Co Active matrix type display device
KR100900541B1 (ko) * 2002-11-14 2009-06-02 삼성전자주식회사 액정 표시 장치용 박막 트랜지스터 기판
KR101030545B1 (ko) * 2004-03-30 2011-04-21 엘지디스플레이 주식회사 액정표시소자
KR101208724B1 (ko) * 2005-01-03 2012-12-06 삼성디스플레이 주식회사 어레이 기판 및 이를 구비한 표시 패널
KR20070004229A (ko) * 2005-07-04 2007-01-09 삼성전자주식회사 박막트랜지스터기판 및 이의 제조방법
KR100846974B1 (ko) * 2006-06-23 2008-07-17 베이징 보에 옵토일렉트로닉스 테크놀로지 컴퍼니 리미티드 Ｔｆｔ ｌｃｄ 어레이 기판 및 그 제조 방법
KR20080000496A (ko) * 2006-06-27 2008-01-02 엘지.필립스 엘시디 주식회사 액정표시장치용 어레이 기판 및 그 제조방법
CN101382679B (zh) * 2007-09-07 2012-02-08 群康科技(深圳)有限公司 液晶显示面板

Also Published As

Publication number Publication date
US20100225860A1 (en) 2010-09-09
US8405788B2 (en) 2013-03-26
JP2010211206A (ja) 2010-09-24
CN101825816A (zh) 2010-09-08

Similar Documents

Publication Publication Date Title
KR20100100693A (ko) Ｔｆｔ-ｌｃｄ 어레이 기판 및 그 제조 방법
JP5710165B2 (ja) Ｔｆｔ−ｌｃｄアレイ基板及びその製造方法
TWI440945B (zh) 用於邊緣場切換模式液晶顯示裝置之陣列基板及其製造方法
JP5503996B2 (ja) Ｔｆｔ−ｌｃｄアレイ基板及びその製造方法
JP4767242B2 (ja) Ｔｆｔ−ｌｃｄアレイ基板及びその製造方法
CN101825814B (zh) Tft-lcd阵列基板及其制造方法
KR101107246B1 (ko) 박막 트랜지스터 기판 및 그 제조 방법
KR101183361B1 (ko) 액정 표시 장치용 어레이 기판 및 그 제조 방법
KR101264722B1 (ko) 액정표시장치의 제조방법
CN102645803A (zh) 像素单元，阵列基板、液晶面板、显示装置及其制造方法
CN101738799A (zh) Tft-lcd阵列基板及其制造方法
US10504943B2 (en) Method for manufacturing an array substrate motherboard
CN104360557A (zh) 阵列基板及其制造方法,以及显示装置
US8018564B2 (en) Liquid crystal display device having a composite data line with a line opening exposing the top surface and sidewalls
CN102087449A (zh) 液晶显示设备的阵列基板和制造该阵列基板的方法
CN103293797A (zh) 一种薄膜晶体管液晶显示装置及其制作方法
CN202421681U (zh) 像素单元、阵列基板、液晶面板及显示装置
KR101127218B1 (ko) 액정표시장치용 어레이 기판과 그 제조방법
US7471357B2 (en) Liquid crystal display device and method for fabricating the same
US7416926B2 (en) Liquid crystal display device and method for fabricating the same
KR20080000751A (ko) 액정표시장치용 어레이 기판 및 그 제조방법
US7106390B2 (en) Liquid crystal display and fabricating method thereof
JPH1138437A (ja) 液晶表示装置及びその製造方法
CN101566768B (zh) 薄膜晶体管液晶显示器像素结构及其制造方法
KR20070115235A (ko) 개구율이 향상된 표시 장치 및 그 제조 방법

Legal Events

Date Code Title Description
A201 Request for examination
PA0109 Patent application

Patent event code: PA01091R01D

Comment text: Patent Application

Patent event date: 20100305

PA0201 Request for examination
PG1501 Laying open of application
E902 Notification of reason for refusal
PE0902 Notice of grounds for rejection

Comment text: Notification of reason for refusal

Patent event date: 20110617

Patent event code: PE09021S01D

E601 Decision to refuse application
PE0601 Decision on rejection of patent

Patent event date: 20120131

Comment text: Decision to Refuse Application

Patent event code: PE06012S01D

Patent event date: 20110617

Comment text: Notification of reason for refusal

Patent event code: PE06011S01I