CN101825816A - Tft-lcd阵列基板及其制造方法 - Google Patents
Tft-lcd阵列基板及其制造方法 Download PDFInfo
- Publication number
- CN101825816A CN101825816A CN200910079295.5A CN200910079295A CN101825816A CN 101825816 A CN101825816 A CN 101825816A CN 200910079295 A CN200910079295 A CN 200910079295A CN 101825816 A CN101825816 A CN 101825816A
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- tft
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- 239000010409 thin film Substances 0.000 title claims abstract description 40
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 26
- 239000004973 liquid crystal related substance Substances 0.000 title description 2
- 239000000758 substrate Substances 0.000 claims abstract description 42
- 239000010408 film Substances 0.000 claims description 78
- 229920002120 photoresistant polymer Polymers 0.000 claims description 69
- 238000005516 engineering process Methods 0.000 claims description 63
- 239000000203 mixture Substances 0.000 claims description 63
- 238000000034 method Methods 0.000 claims description 37
- 239000004065 semiconductor Substances 0.000 claims description 36
- 238000002161 passivation Methods 0.000 claims description 30
- 238000009413 insulation Methods 0.000 claims description 16
- 238000000151 deposition Methods 0.000 claims description 15
- 238000001755 magnetron sputter deposition Methods 0.000 claims description 12
- 238000002207 thermal evaporation Methods 0.000 claims description 12
- 238000005530 etching Methods 0.000 claims description 10
- 230000008021 deposition Effects 0.000 claims description 9
- 239000007792 gaseous phase Substances 0.000 claims description 6
- 239000000126 substance Substances 0.000 claims description 6
- 239000011248 coating agent Substances 0.000 claims description 4
- 238000000576 coating method Methods 0.000 claims description 4
- 230000015572 biosynthetic process Effects 0.000 claims description 3
- 238000010586 diagram Methods 0.000 description 11
- 229910052751 metal Inorganic materials 0.000 description 8
- 239000002184 metal Substances 0.000 description 8
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 description 4
- 229910052782 aluminium Inorganic materials 0.000 description 3
- 239000000463 material Substances 0.000 description 3
- 150000002739 metals Chemical class 0.000 description 3
- 239000011521 glass Substances 0.000 description 2
- 239000007769 metal material Substances 0.000 description 2
- 150000004767 nitrides Chemical class 0.000 description 2
- 239000010453 quartz Substances 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 230000005540 biological transmission Effects 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- JAONJTDQXUSBGG-UHFFFAOYSA-N dialuminum;dizinc;oxygen(2-) Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Al+3].[Al+3].[Zn+2].[Zn+2] JAONJTDQXUSBGG-UHFFFAOYSA-N 0.000 description 1
- 238000005265 energy consumption Methods 0.000 description 1
- MRNHPUHPBOKKQT-UHFFFAOYSA-N indium;tin;hydrate Chemical compound O.[In].[Sn] MRNHPUHPBOKKQT-UHFFFAOYSA-N 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- YVTHLONGBIQYBO-UHFFFAOYSA-N zinc indium(3+) oxygen(2-) Chemical compound [O--].[Zn++].[In+3] YVTHLONGBIQYBO-UHFFFAOYSA-N 0.000 description 1
Images
Classifications
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
- G02F1/1362—Active matrix addressed cells
- G02F1/136209—Light shielding layers, e.g. black matrix, incorporated in the active matrix substrate, e.g. structurally associated with the switching element
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
- G02F1/1362—Active matrix addressed cells
- G02F1/136286—Wiring, e.g. gate line, drain line
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
- H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
- H10D86/441—Interconnections, e.g. scanning lines
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
- H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
- H10D86/60—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs wherein the TFTs are in active matrices
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F2201/00—Constructional arrangements not provided for in groups G02F1/00 - G02F7/00
- G02F2201/40—Arrangements for improving the aperture ratio
Landscapes
- Physics & Mathematics (AREA)
- Nonlinear Science (AREA)
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Mathematical Physics (AREA)
- Chemical & Material Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
- General Physics & Mathematics (AREA)
- Optics & Photonics (AREA)
- Liquid Crystal (AREA)
- Thin Film Transistor (AREA)
Priority Applications (4)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN200910079295.5A CN101825816A (zh) | 2009-03-06 | 2009-03-06 | Tft-lcd阵列基板及其制造方法 |
| JP2010048930A JP2010211206A (ja) | 2009-03-06 | 2010-03-05 | Tft−lcdアレイ基板及びその製造方法 |
| KR1020100019818A KR20100100693A (ko) | 2009-03-06 | 2010-03-05 | Tft-lcd 어레이 기판 및 그 제조 방법 |
| US12/718,400 US8405788B2 (en) | 2009-03-06 | 2010-03-05 | TFT-LCD array substrate and manufacturing method thereof |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN200910079295.5A CN101825816A (zh) | 2009-03-06 | 2009-03-06 | Tft-lcd阵列基板及其制造方法 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN101825816A true CN101825816A (zh) | 2010-09-08 |
Family
ID=42677961
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN200910079295.5A Pending CN101825816A (zh) | 2009-03-06 | 2009-03-06 | Tft-lcd阵列基板及其制造方法 |
Country Status (4)
| Country | Link |
|---|---|
| US (1) | US8405788B2 (enExample) |
| JP (1) | JP2010211206A (enExample) |
| KR (1) | KR20100100693A (enExample) |
| CN (1) | CN101825816A (enExample) |
Cited By (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102879962A (zh) * | 2012-09-28 | 2013-01-16 | 京东方科技集团股份有限公司 | 阵列基板及显示装置 |
| CN102937853A (zh) * | 2012-10-19 | 2013-02-20 | 北京京东方光电科技有限公司 | 一种电容式内嵌触摸屏、其驱动方法及显示装置 |
| CN102955635A (zh) * | 2012-10-15 | 2013-03-06 | 北京京东方光电科技有限公司 | 一种电容式内嵌触摸屏及显示装置 |
| CN103163703A (zh) * | 2011-12-14 | 2013-06-19 | 乐金显示有限公司 | 液晶显示设备及其制造方法 |
| CN103676380A (zh) * | 2013-12-25 | 2014-03-26 | 合肥京东方光电科技有限公司 | 阵列基板、显示面板及其驱动方法 |
| CN103744245A (zh) * | 2013-12-31 | 2014-04-23 | 深圳市华星光电技术有限公司 | 一种液晶显示器阵列基板及相应的液晶显示器 |
| CN104269412B (zh) * | 2014-09-19 | 2017-08-25 | 昆山龙腾光电有限公司 | Tft阵列基板、tft阵列基板的制作方法及显示装置 |
| WO2019196632A1 (zh) * | 2018-04-09 | 2019-10-17 | 京东方科技集团股份有限公司 | 阵列基板及其制备方法、显示面板、显示装置 |
| CN112540484A (zh) * | 2020-11-24 | 2021-03-23 | 惠科股份有限公司 | 一种显示面板和显示装置 |
| CN114994992A (zh) * | 2022-05-11 | 2022-09-02 | 京东方科技集团股份有限公司 | 显示面板及显示装置 |
| CN116088211A (zh) * | 2023-01-03 | 2023-05-09 | 信利(惠州)智能显示有限公司 | 液晶显示面板与液晶显示装置 |
Families Citing this family (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2012029268A (ja) | 2010-06-25 | 2012-02-09 | Ntt Docomo Inc | ネットワーク装置 |
| CN102651340B (zh) * | 2011-12-31 | 2014-11-19 | 京东方科技集团股份有限公司 | 一种tft阵列基板的制造方法 |
| CN103472943A (zh) * | 2013-08-06 | 2013-12-25 | 福建华映显示科技有限公司 | 内嵌式触控显示面板 |
| CN113948458B (zh) * | 2021-10-18 | 2024-04-30 | 昆山龙腾光电股份有限公司 | 阵列基板及其制作方法 |
Family Cites Families (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP3208658B2 (ja) * | 1997-03-27 | 2001-09-17 | 株式会社アドバンスト・ディスプレイ | 電気光学素子の製法 |
| TW452669B (en) * | 1999-03-18 | 2001-09-01 | Sanyo Electric Co | Active matrix type display device |
| KR100900541B1 (ko) * | 2002-11-14 | 2009-06-02 | 삼성전자주식회사 | 액정 표시 장치용 박막 트랜지스터 기판 |
| KR101030545B1 (ko) * | 2004-03-30 | 2011-04-21 | 엘지디스플레이 주식회사 | 액정표시소자 |
| KR101208724B1 (ko) * | 2005-01-03 | 2012-12-06 | 삼성디스플레이 주식회사 | 어레이 기판 및 이를 구비한 표시 패널 |
| KR20070004229A (ko) * | 2005-07-04 | 2007-01-09 | 삼성전자주식회사 | 박막트랜지스터기판 및 이의 제조방법 |
| KR100846974B1 (ko) * | 2006-06-23 | 2008-07-17 | 베이징 보에 옵토일렉트로닉스 테크놀로지 컴퍼니 리미티드 | Tft lcd 어레이 기판 및 그 제조 방법 |
| KR20080000496A (ko) * | 2006-06-27 | 2008-01-02 | 엘지.필립스 엘시디 주식회사 | 액정표시장치용 어레이 기판 및 그 제조방법 |
| CN101382679B (zh) * | 2007-09-07 | 2012-02-08 | 群康科技(深圳)有限公司 | 液晶显示面板 |
-
2009
- 2009-03-06 CN CN200910079295.5A patent/CN101825816A/zh active Pending
-
2010
- 2010-03-05 JP JP2010048930A patent/JP2010211206A/ja active Pending
- 2010-03-05 US US12/718,400 patent/US8405788B2/en active Active
- 2010-03-05 KR KR1020100019818A patent/KR20100100693A/ko not_active Ceased
Cited By (17)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103163703A (zh) * | 2011-12-14 | 2013-06-19 | 乐金显示有限公司 | 液晶显示设备及其制造方法 |
| CN103163703B (zh) * | 2011-12-14 | 2016-04-13 | 乐金显示有限公司 | 液晶显示设备及其制造方法 |
| CN102879962A (zh) * | 2012-09-28 | 2013-01-16 | 京东方科技集团股份有限公司 | 阵列基板及显示装置 |
| CN102955635A (zh) * | 2012-10-15 | 2013-03-06 | 北京京东方光电科技有限公司 | 一种电容式内嵌触摸屏及显示装置 |
| CN102937853B (zh) * | 2012-10-19 | 2015-10-14 | 北京京东方光电科技有限公司 | 一种电容式内嵌触摸屏、其驱动方法及显示装置 |
| CN102937853A (zh) * | 2012-10-19 | 2013-02-20 | 北京京东方光电科技有限公司 | 一种电容式内嵌触摸屏、其驱动方法及显示装置 |
| US9057906B2 (en) | 2012-10-19 | 2015-06-16 | Beijing Boe Optoelectronics Technology Co., Ltd. | Capacitive touch screens, method of driving the same and displays |
| CN103676380A (zh) * | 2013-12-25 | 2014-03-26 | 合肥京东方光电科技有限公司 | 阵列基板、显示面板及其驱动方法 |
| WO2015100778A1 (zh) * | 2013-12-31 | 2015-07-09 | 深圳市华星光电技术有限公司 | 一种液晶显示器阵列基板及相应的液晶显示器 |
| CN103744245A (zh) * | 2013-12-31 | 2014-04-23 | 深圳市华星光电技术有限公司 | 一种液晶显示器阵列基板及相应的液晶显示器 |
| CN104269412B (zh) * | 2014-09-19 | 2017-08-25 | 昆山龙腾光电有限公司 | Tft阵列基板、tft阵列基板的制作方法及显示装置 |
| WO2019196632A1 (zh) * | 2018-04-09 | 2019-10-17 | 京东方科技集团股份有限公司 | 阵列基板及其制备方法、显示面板、显示装置 |
| US11362115B2 (en) | 2018-04-09 | 2022-06-14 | Ordos Yuansheng Optoelectronics Co., Ltd. | Array substrate and preparation method therefor, and display panel and display device |
| CN112540484A (zh) * | 2020-11-24 | 2021-03-23 | 惠科股份有限公司 | 一种显示面板和显示装置 |
| CN114994992A (zh) * | 2022-05-11 | 2022-09-02 | 京东方科技集团股份有限公司 | 显示面板及显示装置 |
| CN114994992B (zh) * | 2022-05-11 | 2023-10-20 | 京东方科技集团股份有限公司 | 显示面板及显示装置 |
| CN116088211A (zh) * | 2023-01-03 | 2023-05-09 | 信利(惠州)智能显示有限公司 | 液晶显示面板与液晶显示装置 |
Also Published As
| Publication number | Publication date |
|---|---|
| US20100225860A1 (en) | 2010-09-09 |
| US8405788B2 (en) | 2013-03-26 |
| JP2010211206A (ja) | 2010-09-24 |
| KR20100100693A (ko) | 2010-09-15 |
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| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| RJ01 | Rejection of invention patent application after publication | ||
| RJ01 | Rejection of invention patent application after publication |
Application publication date: 20100908 |