JP2010205849A - 半導体装置 - Google Patents

半導体装置 Download PDF

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Publication number
JP2010205849A
JP2010205849A JP2009048440A JP2009048440A JP2010205849A JP 2010205849 A JP2010205849 A JP 2010205849A JP 2009048440 A JP2009048440 A JP 2009048440A JP 2009048440 A JP2009048440 A JP 2009048440A JP 2010205849 A JP2010205849 A JP 2010205849A
Authority
JP
Japan
Prior art keywords
semiconductor device
substrate
layer
shield layer
antenna
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Abandoned
Application number
JP2009048440A
Other languages
English (en)
Japanese (ja)
Other versions
JP2010205849A5 (enExample
Inventor
Tatsuya Oguro
黒 達 也 大
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp filed Critical Toshiba Corp
Priority to JP2009048440A priority Critical patent/JP2010205849A/ja
Priority to US12/714,768 priority patent/US20100219514A1/en
Publication of JP2010205849A publication Critical patent/JP2010205849A/ja
Publication of JP2010205849A5 publication Critical patent/JP2010205849A5/ja
Abandoned legal-status Critical Current

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/58—Structural electrical arrangements for semiconductor devices not otherwise provided for, e.g. in combination with batteries
    • H01L23/64—Impedance arrangements
    • H01L23/66—High-frequency adaptations
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/552—Protection against radiation, e.g. light or electromagnetic waves
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/58—Structural electrical arrangements for semiconductor devices not otherwise provided for, e.g. in combination with batteries
    • H01L23/585—Structural electrical arrangements for semiconductor devices not otherwise provided for, e.g. in combination with batteries comprising conductive layers or plates or strips or rods or rings
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H01L21/76898—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics formed through a semiconductor substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2223/00—Details relating to semiconductor or other solid state devices covered by the group H01L23/00
    • H01L2223/58—Structural electrical arrangements for semiconductor devices not otherwise provided for
    • H01L2223/64—Impedance arrangements
    • H01L2223/66—High-frequency adaptations
    • H01L2223/6661—High-frequency adaptations for passive devices
    • H01L2223/6677—High-frequency adaptations for passive devices for antenna, e.g. antenna included within housing of semiconductor device
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

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  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Health & Medical Sciences (AREA)
  • Electromagnetism (AREA)
  • Toxicology (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Semiconductor Integrated Circuits (AREA)
JP2009048440A 2009-03-02 2009-03-02 半導体装置 Abandoned JP2010205849A (ja)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP2009048440A JP2010205849A (ja) 2009-03-02 2009-03-02 半導体装置
US12/714,768 US20100219514A1 (en) 2009-03-02 2010-03-01 Semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2009048440A JP2010205849A (ja) 2009-03-02 2009-03-02 半導体装置

Publications (2)

Publication Number Publication Date
JP2010205849A true JP2010205849A (ja) 2010-09-16
JP2010205849A5 JP2010205849A5 (enExample) 2011-07-28

Family

ID=42666671

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2009048440A Abandoned JP2010205849A (ja) 2009-03-02 2009-03-02 半導体装置

Country Status (2)

Country Link
US (1) US20100219514A1 (enExample)
JP (1) JP2010205849A (enExample)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2012070253A (ja) * 2010-09-24 2012-04-05 Toshiba Corp 無線装置
JP2013542596A (ja) * 2010-09-24 2013-11-21 アドバンスト・マイクロ・ディバイシズ・インコーポレイテッド 補強シリコン貫通ビアを備える半導体チップ
JP2019110293A (ja) * 2017-12-15 2019-07-04 電子商取引安全技術研究組合 半導体装置
CN112448152A (zh) * 2019-08-30 2021-03-05 庆鼎精密电子（淮安）有限公司 集成化天线叠构及其制作方法

Families Citing this family (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI497679B (zh) * 2009-11-27 2015-08-21 日月光半導體製造股份有限公司 半導體封裝件及其製造方法
US8569894B2 (en) 2010-01-13 2013-10-29 Advanced Semiconductor Engineering, Inc. Semiconductor package with single sided substrate design and manufacturing methods thereof
TWI411075B (zh) 2010-03-22 2013-10-01 日月光半導體製造股份有限公司 半導體封裝件及其製造方法
US8941222B2 (en) 2010-11-11 2015-01-27 Advanced Semiconductor Engineering Inc. Wafer level semiconductor package and manufacturing methods thereof
US9406658B2 (en) 2010-12-17 2016-08-02 Advanced Semiconductor Engineering, Inc. Embedded component device and manufacturing methods thereof
ITMI20111416A1 (it) * 2011-07-28 2013-01-29 St Microelectronics Srl Circuito integrato dotato di almeno una antenna integrata
TW201415600A (zh) * 2012-10-02 2014-04-16 鈺橋半導體股份有限公司 具有內嵌元件、內建定位件、及電磁屏障之線路板
US9721948B1 (en) * 2016-02-02 2017-08-01 Globalfoundries Inc. Switch improvement using layout optimization
WO2018004684A1 (en) * 2016-07-01 2018-01-04 Intel Corporation Semiconductor packages with antennas
US12327804B2 (en) * 2022-05-13 2025-06-10 Taiwan Semiconductor Manufacturing Company, Ltd. Semiconductor device and manufacturing method thereof
US20240096817A1 (en) * 2022-09-16 2024-03-21 Qualcomm Incorporated On-chip hybrid electromagnetic interference (emi) shielding with thermal mitigation

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6646328B2 (en) * 2002-01-11 2003-11-11 Taiwan Semiconductor Manufacturing Co. Ltd. Chip antenna with a shielding layer
JP4141881B2 (ja) * 2003-04-04 2008-08-27 シャープ株式会社 集積回路

Cited By (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2012070253A (ja) * 2010-09-24 2012-04-05 Toshiba Corp 無線装置
JP2013542596A (ja) * 2010-09-24 2013-11-21 アドバンスト・マイクロ・ディバイシズ・インコーポレイテッド 補強シリコン貫通ビアを備える半導体チップ
KR101540415B1 (ko) * 2010-09-24 2015-08-05 어드밴스드 마이크로 디바이시즈, 인코포레이티드 보강 실리콘 관통 비아를 구비하는 반도체 칩
JP2019110293A (ja) * 2017-12-15 2019-07-04 電子商取引安全技術研究組合 半導体装置
JP2023076693A (ja) * 2017-12-15 2023-06-01 株式会社Scu 半導体装置
JP7290846B2 (ja) 2017-12-15 2023-06-14 株式会社Scu 半導体装置
JP7495551B2 (ja) 2017-12-15 2024-06-04 株式会社Scu 半導体装置
CN112448152A (zh) * 2019-08-30 2021-03-05 庆鼎精密电子（淮安）有限公司 集成化天线叠构及其制作方法
CN112448152B (zh) * 2019-08-30 2022-10-21 庆鼎精密电子（淮安）有限公司 集成化天线叠构及其制作方法

Also Published As

Publication number Publication date
US20100219514A1 (en) 2010-09-02

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