JP2010199154A - 固体撮像素子 - Google Patents

固体撮像素子 Download PDF

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Publication number
JP2010199154A
JP2010199154A JP2009039755A JP2009039755A JP2010199154A JP 2010199154 A JP2010199154 A JP 2010199154A JP 2009039755 A JP2009039755 A JP 2009039755A JP 2009039755 A JP2009039755 A JP 2009039755A JP 2010199154 A JP2010199154 A JP 2010199154A
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JP
Japan
Prior art keywords
region
electrode
floating diffusion
solid
charge
Prior art date
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Pending
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JP2009039755A
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English (en)
Japanese (ja)
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JP2010199154A5 (enExample
Inventor
Takanori Watanabe
高典 渡邉
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Canon Inc
Original Assignee
Canon Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Canon Inc filed Critical Canon Inc
Priority to JP2009039755A priority Critical patent/JP2010199154A/ja
Priority to US12/697,408 priority patent/US20100214464A1/en
Publication of JP2010199154A publication Critical patent/JP2010199154A/ja
Publication of JP2010199154A5 publication Critical patent/JP2010199154A5/ja
Pending legal-status Critical Current

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/12—Image sensors
    • H10F39/18—Complementary metal-oxide-semiconductor [CMOS] image sensors; Photodiode array image sensors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/802—Geometry or disposition of elements in pixels, e.g. address-lines or gate electrodes

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  • Solid State Image Pick-Up Elements (AREA)
  • Transforming Light Signals Into Electric Signals (AREA)
JP2009039755A 2009-02-23 2009-02-23 固体撮像素子 Pending JP2010199154A (ja)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP2009039755A JP2010199154A (ja) 2009-02-23 2009-02-23 固体撮像素子
US12/697,408 US20100214464A1 (en) 2009-02-23 2010-02-01 Solid-state imaging apparatus

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2009039755A JP2010199154A (ja) 2009-02-23 2009-02-23 固体撮像素子

Publications (2)

Publication Number Publication Date
JP2010199154A true JP2010199154A (ja) 2010-09-09
JP2010199154A5 JP2010199154A5 (enExample) 2012-03-08

Family

ID=42630655

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2009039755A Pending JP2010199154A (ja) 2009-02-23 2009-02-23 固体撮像素子

Country Status (2)

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US (1) US20100214464A1 (enExample)
JP (1) JP2010199154A (enExample)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2010206181A (ja) * 2009-02-06 2010-09-16 Canon Inc 光電変換装置及び撮像システム
JP5538922B2 (ja) * 2009-02-06 2014-07-02 キヤノン株式会社 固体撮像装置の製造方法
JP2010206178A (ja) 2009-02-06 2010-09-16 Canon Inc 光電変換装置、及び光電変換装置の製造方法
JP6016434B2 (ja) 2012-04-23 2016-10-26 キヤノン株式会社 固体撮像装置、その製造方法、及びカメラ
JP2016082306A (ja) 2014-10-10 2016-05-16 キヤノン株式会社 撮像装置、撮像システム及び撮像装置の駆動方法
US11425365B2 (en) 2018-12-14 2022-08-23 Canon Kabushiki Kaisha Photoelectric conversion device, method of manufacturing photoelectric conversion device, and method of manufacturing semiconductor device
US11922175B2 (en) 2022-07-29 2024-03-05 Arista Networks, Inc. Unplanned reboot expedited recovery for network devices

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2003115580A (ja) * 2001-10-04 2003-04-18 Sony Corp 固体撮像素子およびその製造方法
JP2004134685A (ja) * 2002-10-15 2004-04-30 Toshiba Corp 固体撮像装置及びその製造方法
JP2005268814A (ja) * 2002-06-27 2005-09-29 Canon Inc 固体撮像装置及び固体撮像装置を用いたカメラシステム
JP2006310835A (ja) * 2005-04-28 2006-11-09 Samsung Electronics Co Ltd Ｃｍｏｓイメージセンサー及びその製造方法
JP2008124463A (ja) * 2006-11-08 2008-05-29 Samsung Electronics Co Ltd Ｃｍｏｓイメージセンサーのピクセル構造及び該回路

Family Cites Families (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2003031787A (ja) * 2001-07-17 2003-01-31 Canon Inc 固体撮像素子及びその駆動方法
US7078745B2 (en) * 2003-03-05 2006-07-18 Micron Technology, Inc. CMOS imager with enhanced transfer of charge and low voltage operation
US7095075B2 (en) * 2003-07-01 2006-08-22 Micron Technology, Inc. Apparatus and method for split transistor memory having improved endurance
JP2005142470A (ja) * 2003-11-10 2005-06-02 Seiko Instruments Inc 光電変換装置及びイメージセンサーｉｃ
JP2006073736A (ja) * 2004-09-01 2006-03-16 Canon Inc 光電変換装置、固体撮像装置及び固体撮像システム
JP4916101B2 (ja) * 2004-09-01 2012-04-11 キヤノン株式会社 光電変換装置、固体撮像装置及び固体撮像システム
JP2006073885A (ja) * 2004-09-03 2006-03-16 Canon Inc 固体撮像装置、その製造方法、およびデジタルカメラ
JP5132102B2 (ja) * 2006-08-01 2013-01-30 キヤノン株式会社 光電変換装置および光電変換装置を用いた撮像システム
JP5110820B2 (ja) * 2006-08-02 2012-12-26 キヤノン株式会社 光電変換装置、光電変換装置の製造方法及び撮像システム
JP4350768B2 (ja) * 2007-04-16 2009-10-21 キヤノン株式会社 光電変換装置及び撮像装置
JP2009021809A (ja) * 2007-07-11 2009-01-29 Canon Inc 撮像装置の駆動方法、撮像装置、及び撮像システム
JP5153378B2 (ja) * 2008-02-15 2013-02-27 キヤノン株式会社 固体撮像装置及びその駆動方法
JP5335271B2 (ja) * 2008-04-09 2013-11-06 キヤノン株式会社 光電変換装置及びそれを用いた撮像システム
JP5188275B2 (ja) * 2008-06-06 2013-04-24 キヤノン株式会社 固体撮像装置、その駆動方法及び撮像システム

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2003115580A (ja) * 2001-10-04 2003-04-18 Sony Corp 固体撮像素子およびその製造方法
JP2005268814A (ja) * 2002-06-27 2005-09-29 Canon Inc 固体撮像装置及び固体撮像装置を用いたカメラシステム
JP2004134685A (ja) * 2002-10-15 2004-04-30 Toshiba Corp 固体撮像装置及びその製造方法
JP2006310835A (ja) * 2005-04-28 2006-11-09 Samsung Electronics Co Ltd Ｃｍｏｓイメージセンサー及びその製造方法
JP2008124463A (ja) * 2006-11-08 2008-05-29 Samsung Electronics Co Ltd Ｃｍｏｓイメージセンサーのピクセル構造及び該回路

Also Published As

Publication number Publication date
US20100214464A1 (en) 2010-08-26

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