JP2010192824A5 - - Google Patents
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- Publication number
- JP2010192824A5 JP2010192824A5 JP2009038038A JP2009038038A JP2010192824A5 JP 2010192824 A5 JP2010192824 A5 JP 2010192824A5 JP 2009038038 A JP2009038038 A JP 2009038038A JP 2009038038 A JP2009038038 A JP 2009038038A JP 2010192824 A5 JP2010192824 A5 JP 2010192824A5
- Authority
- JP
- Japan
- Prior art keywords
- nitride semiconductor
- layer
- manufacturing
- semiconductor device
- semiconductor layer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
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- 239000004065 semiconductor Substances 0.000 claims description 45
- 150000004767 nitrides Chemical class 0.000 claims description 35
- 238000000034 method Methods 0.000 claims description 18
- 239000000758 substrate Substances 0.000 claims description 17
- 238000004519 manufacturing process Methods 0.000 claims description 13
- 238000005530 etching Methods 0.000 claims description 6
- 230000002093 peripheral effect Effects 0.000 claims description 6
- 238000005498 polishing Methods 0.000 claims description 5
- 239000000463 material Substances 0.000 claims description 3
- 239000002904 solvent Substances 0.000 claims description 3
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 2
- 239000013078 crystal Substances 0.000 claims description 2
- 229910000484 niobium oxide Inorganic materials 0.000 claims description 2
- URLJKFSTXLNXLG-UHFFFAOYSA-N niobium(5+);oxygen(2-) Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Nb+5].[Nb+5] URLJKFSTXLNXLG-UHFFFAOYSA-N 0.000 claims description 2
- 229910052710 silicon Inorganic materials 0.000 claims description 2
- 239000010703 silicon Substances 0.000 claims description 2
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 2
- 229910052814 silicon oxide Inorganic materials 0.000 claims description 2
- 239000000126 substance Substances 0.000 claims description 2
- 238000003475 lamination Methods 0.000 claims 1
- 238000010030 laminating Methods 0.000 description 1
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2009038038A JP5326643B2 (ja) | 2009-02-20 | 2009-02-20 | 窒化物半導体素子の製造方法 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2009038038A JP5326643B2 (ja) | 2009-02-20 | 2009-02-20 | 窒化物半導体素子の製造方法 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2010192824A JP2010192824A (ja) | 2010-09-02 |
| JP2010192824A5 true JP2010192824A5 (enExample) | 2012-02-23 |
| JP5326643B2 JP5326643B2 (ja) | 2013-10-30 |
Family
ID=42818504
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2009038038A Active JP5326643B2 (ja) | 2009-02-20 | 2009-02-20 | 窒化物半導体素子の製造方法 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP5326643B2 (enExample) |
Families Citing this family (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2013183032A (ja) * | 2012-03-02 | 2013-09-12 | Toshiba Corp | 半導体発光素子 |
| JP6479308B2 (ja) * | 2013-08-09 | 2019-03-06 | ソニー株式会社 | 面発光レーザ素子及びその製造方法 |
| JPWO2018096850A1 (ja) | 2016-11-24 | 2019-10-17 | ソニー株式会社 | 面発光レーザおよび電子機器 |
Family Cites Families (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2003270467A (ja) * | 2002-01-09 | 2003-09-25 | Matsushita Electric Ind Co Ltd | 光導波路デバイスの製造方法、光導波路デバイス並びに当該光導波路デバイスを用いたコヒーレント光源及び光学装置 |
| JPWO2005099057A1 (ja) * | 2004-03-31 | 2008-03-06 | 日本電気株式会社 | 窒化物半導体発光素子用ウエハとその製造方法およびそのウエハから得られた窒化物半導体発光素子 |
| US6956246B1 (en) * | 2004-06-03 | 2005-10-18 | Lumileds Lighting U.S., Llc | Resonant cavity III-nitride light emitting devices fabricated by growth substrate removal |
| JP2006216788A (ja) * | 2005-02-03 | 2006-08-17 | Hitachi Cable Ltd | 半導体レーザー用単結晶ウェハ |
| KR101090900B1 (ko) * | 2006-10-18 | 2011-12-08 | 니텍 인코포레이티드 | 수직구조의 심자외선 발광다이오드 |
| JP2010517273A (ja) * | 2007-01-22 | 2010-05-20 | クリー レッド ライティング ソリューションズ、インコーポレイテッド | フォールト・トレラント発光体、フォールト・トレラント発光体を含むシステムおよびフォールト・トレラント発光体を作製する方法 |
-
2009
- 2009-02-20 JP JP2009038038A patent/JP5326643B2/ja active Active
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