JP5326643B2 - 窒化物半導体素子の製造方法 - Google Patents

窒化物半導体素子の製造方法 Download PDF

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JP5326643B2
JP5326643B2 JP2009038038A JP2009038038A JP5326643B2 JP 5326643 B2 JP5326643 B2 JP 5326643B2 JP 2009038038 A JP2009038038 A JP 2009038038A JP 2009038038 A JP2009038038 A JP 2009038038A JP 5326643 B2 JP5326643 B2 JP 5326643B2
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nitride semiconductor
layer
semiconductor layer
wafer
manufacturing
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JP2010192824A (ja
JP2010192824A5 (enExample
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哲平 国宗
正良 ▲高▼橋
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Nichia Corp
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Nichia Corp
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JP2009038038A 2009-02-20 2009-02-20 窒化物半導体素子の製造方法 Active JP5326643B2 (ja)

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JP2009038038A JP5326643B2 (ja) 2009-02-20 2009-02-20 窒化物半導体素子の製造方法

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JP2009038038A JP5326643B2 (ja) 2009-02-20 2009-02-20 窒化物半導体素子の製造方法

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JP2010192824A JP2010192824A (ja) 2010-09-02
JP2010192824A5 JP2010192824A5 (enExample) 2012-02-23
JP5326643B2 true JP5326643B2 (ja) 2013-10-30

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Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2013183032A (ja) * 2012-03-02 2013-09-12 Toshiba Corp 半導体発光素子
JP6479308B2 (ja) * 2013-08-09 2019-03-06 ソニー株式会社 面発光レーザ素子及びその製造方法
JPWO2018096850A1 (ja) 2016-11-24 2019-10-17 ソニー株式会社 面発光レーザおよび電子機器

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2003270467A (ja) * 2002-01-09 2003-09-25 Matsushita Electric Ind Co Ltd 光導波路デバイスの製造方法、光導波路デバイス並びに当該光導波路デバイスを用いたコヒーレント光源及び光学装置
JPWO2005099057A1 (ja) * 2004-03-31 2008-03-06 日本電気株式会社 窒化物半導体発光素子用ウエハとその製造方法およびそのウエハから得られた窒化物半導体発光素子
US6956246B1 (en) * 2004-06-03 2005-10-18 Lumileds Lighting U.S., Llc Resonant cavity III-nitride light emitting devices fabricated by growth substrate removal
JP2006216788A (ja) * 2005-02-03 2006-08-17 Hitachi Cable Ltd 半導体レーザー用単結晶ウェハ
KR101090900B1 (ko) * 2006-10-18 2011-12-08 니텍 인코포레이티드 수직구조의 심자외선 발광다이오드
JP2010517273A (ja) * 2007-01-22 2010-05-20 クリー レッド ライティング ソリューションズ、インコーポレイテッド フォールト・トレラント発光体、フォールト・トレラント発光体を含むシステムおよびフォールト・トレラント発光体を作製する方法

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