JP2010184819A5 - - Google Patents
Download PDFInfo
- Publication number
- JP2010184819A5 JP2010184819A5 JP2009028444A JP2009028444A JP2010184819A5 JP 2010184819 A5 JP2010184819 A5 JP 2010184819A5 JP 2009028444 A JP2009028444 A JP 2009028444A JP 2009028444 A JP2009028444 A JP 2009028444A JP 2010184819 A5 JP2010184819 A5 JP 2010184819A5
- Authority
- JP
- Japan
- Prior art keywords
- glass crucible
- quartz glass
- single crystal
- crystallization accelerator
- silicon single
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims 19
- 238000002425 crystallisation Methods 0.000 claims 10
- 230000008025 crystallization Effects 0.000 claims 10
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims 9
- 229910052710 silicon Inorganic materials 0.000 claims 9
- 239000010703 silicon Substances 0.000 claims 9
- 239000013078 crystal Substances 0.000 claims 8
- 229910052788 barium Inorganic materials 0.000 claims 5
- DSAJWYNOEDNPEQ-UHFFFAOYSA-N barium atom Chemical compound [Ba] DSAJWYNOEDNPEQ-UHFFFAOYSA-N 0.000 claims 5
- 238000004519 manufacturing process Methods 0.000 claims 2
- 238000002844 melting Methods 0.000 claims 2
- 230000008018 melting Effects 0.000 claims 2
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims 2
- OYPRJOBELJOOCE-UHFFFAOYSA-N Calcium Chemical compound [Ca] OYPRJOBELJOOCE-UHFFFAOYSA-N 0.000 claims 1
- FYYHWMGAXLPEAU-UHFFFAOYSA-N Magnesium Chemical compound [Mg] FYYHWMGAXLPEAU-UHFFFAOYSA-N 0.000 claims 1
- 229910052791 calcium Inorganic materials 0.000 claims 1
- 239000011575 calcium Substances 0.000 claims 1
- 238000010438 heat treatment Methods 0.000 claims 1
- 229910052749 magnesium Inorganic materials 0.000 claims 1
- 239000011777 magnesium Substances 0.000 claims 1
- 239000000155 melt Substances 0.000 claims 1
- 230000002093 peripheral effect Effects 0.000 claims 1
- 239000000843 powder Substances 0.000 claims 1
- 239000000377 silicon dioxide Substances 0.000 claims 1
- 229910052712 strontium Inorganic materials 0.000 claims 1
- CIOAGBVUUVVLOB-UHFFFAOYSA-N strontium atom Chemical compound [Sr] CIOAGBVUUVVLOB-UHFFFAOYSA-N 0.000 claims 1
- 239000000126 substance Substances 0.000 claims 1
Priority Applications (8)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US13/148,768 US20120006254A1 (en) | 2009-02-10 | 2009-02-09 | Quartz glass crucible for pulling single-crystal silicon and process for producing single-crystal silicon |
| JP2009028444A JP4866924B2 (ja) | 2009-02-10 | 2009-02-10 | シリコン単結晶引き上げ用の石英ガラスルツボおよびシリコン単結晶の製造方法 |
| PCT/JP2010/051893 WO2010092955A1 (ja) | 2009-02-10 | 2010-02-09 | シリコン単結晶引き上げ用の石英ガラスルツボおよびシリコン単結晶の製造方法 |
| SG2011057502A SG173618A1 (en) | 2009-02-10 | 2010-02-09 | Quartz glass crucible for pulling single-crystal silicon and process for producing single-crystal silicon |
| KR1020117018531A KR20120013300A (ko) | 2009-02-10 | 2010-02-09 | 실리콘 단결정 인상용의 석영 유리 도가니 및 실리콘 단결정의 제조방법 |
| EP10741232A EP2397582A1 (en) | 2009-02-10 | 2010-02-09 | Quartz glass crucible for pulling single-crystal silicon and process for producing single-crystal silicon |
| CN2010800073695A CN102317511A (zh) | 2009-02-10 | 2010-02-09 | 硅单结晶拉升用石英玻璃坩埚及硅单结晶的制造方法 |
| TW099104108A TW201035392A (en) | 2009-02-10 | 2010-02-10 | Quartz glass crucible for pulling silicon single crystal and method for producing silicon single crystal |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2009028444A JP4866924B2 (ja) | 2009-02-10 | 2009-02-10 | シリコン単結晶引き上げ用の石英ガラスルツボおよびシリコン単結晶の製造方法 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2010184819A JP2010184819A (ja) | 2010-08-26 |
| JP2010184819A5 true JP2010184819A5 (enExample) | 2011-10-06 |
| JP4866924B2 JP4866924B2 (ja) | 2012-02-01 |
Family
ID=42561797
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2009028444A Expired - Fee Related JP4866924B2 (ja) | 2009-02-10 | 2009-02-10 | シリコン単結晶引き上げ用の石英ガラスルツボおよびシリコン単結晶の製造方法 |
Country Status (8)
| Country | Link |
|---|---|
| US (1) | US20120006254A1 (enExample) |
| EP (1) | EP2397582A1 (enExample) |
| JP (1) | JP4866924B2 (enExample) |
| KR (1) | KR20120013300A (enExample) |
| CN (1) | CN102317511A (enExample) |
| SG (1) | SG173618A1 (enExample) |
| TW (1) | TW201035392A (enExample) |
| WO (1) | WO2010092955A1 (enExample) |
Families Citing this family (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP5610570B2 (ja) * | 2010-07-20 | 2014-10-22 | 株式会社Sumco | シリカガラスルツボ、シリコンインゴットの製造方法 |
| CN102453956B (zh) * | 2010-10-27 | 2016-03-23 | 杭州先进石英材料有限公司 | 一种石英玻璃坩埚及其制备方法 |
| JP5509188B2 (ja) * | 2011-12-26 | 2014-06-04 | ジルトロニック アクチエンゲゼルシャフト | 単結晶シリコンの製造方法 |
| JP5509189B2 (ja) | 2011-12-26 | 2014-06-04 | ジルトロニック アクチエンゲゼルシャフト | 単結晶シリコンの製造方法 |
| KR101680215B1 (ko) * | 2015-01-07 | 2016-11-28 | 주식회사 엘지실트론 | 실리콘 단결정 잉곳 제조 방법 및 그 제조방법에 의해 제조된 실리콘 단결정 잉곳 |
| KR101829291B1 (ko) * | 2016-08-05 | 2018-02-19 | 에스케이실트론 주식회사 | 도가니 및 이를 포함하는 단결정 성장 장치 |
| DE112017004764T5 (de) * | 2016-09-23 | 2019-06-27 | Sumco Corporation | Quarzglastiegel, Herstellungsverfahren dafür und Verfahren zur Herstellung eines Silicium-Einkristalls unter Verwendung eines Quarzglastiegels |
| TWI651283B (zh) * | 2017-04-28 | 2019-02-21 | 友達晶材股份有限公司 | 坩堝結構及其製作方法與矽晶結構及其製作方法 |
| DE102020000701A1 (de) * | 2020-02-03 | 2021-08-05 | Siltronic Ag | Quarzglastiegel zur Herstellung von Siliciumkristallen und Verfahren zur Herstellung von Quarzglastiegel |
| CN115142121B (zh) * | 2021-03-31 | 2023-06-20 | 晶科能源股份有限公司 | 提高复投单晶硅成晶率的方法及单晶硅制备装置 |
| JP7694149B2 (ja) * | 2021-05-25 | 2025-06-18 | 株式会社Sumco | 石英ガラスルツボ及びその製造方法並びにシリコン単結晶の製造方法 |
Family Cites Families (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2003095678A (ja) * | 2001-07-16 | 2003-04-03 | Heraeus Shin-Etsu America | シリコン単結晶製造用ドープ石英ガラスルツボ及びその製造方法 |
| US6641663B2 (en) * | 2001-12-12 | 2003-11-04 | Heracus Shin-Estu America | Silica crucible with inner layer crystallizer and method |
| JP2005145731A (ja) * | 2003-11-12 | 2005-06-09 | Kuramoto Seisakusho Co Ltd | 結晶化石英ルツボ |
| JP2006021985A (ja) * | 2004-06-10 | 2006-01-26 | Kuramoto Seisakusho Co Ltd | 石英ルツボ |
-
2009
- 2009-02-09 US US13/148,768 patent/US20120006254A1/en not_active Abandoned
- 2009-02-10 JP JP2009028444A patent/JP4866924B2/ja not_active Expired - Fee Related
-
2010
- 2010-02-09 KR KR1020117018531A patent/KR20120013300A/ko not_active Withdrawn
- 2010-02-09 EP EP10741232A patent/EP2397582A1/en not_active Withdrawn
- 2010-02-09 CN CN2010800073695A patent/CN102317511A/zh active Pending
- 2010-02-09 SG SG2011057502A patent/SG173618A1/en unknown
- 2010-02-09 WO PCT/JP2010/051893 patent/WO2010092955A1/ja not_active Ceased
- 2010-02-10 TW TW099104108A patent/TW201035392A/zh unknown
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| JP2010184819A5 (enExample) | ||
| JP5229778B2 (ja) | シリコン単結晶引き上げ用石英ガラスルツボの製造方法 | |
| KR101081994B1 (ko) | 다층 구조를 갖는 석영 유리 도가니 | |
| JP4995069B2 (ja) | 内面結晶化ルツボおよび該ルツボを用いた引上げ方法 | |
| TW200730672A (en) | Quartz glass crucible, method of producing the same, and application thereof | |
| JP4866924B2 (ja) | シリコン単結晶引き上げ用の石英ガラスルツボおよびシリコン単結晶の製造方法 | |
| DE602008005099D1 (de) | Hochreiner Quarzglastiegel zum Ziehen eines Einkristall-Siliciumblocks mit großem Durchmesser sowie Herstellungsverfahren | |
| KR101357740B1 (ko) | 실리콘 단결정 인상용 실리카 유리 도가니 | |
| JP2011088755A (ja) | 石英ガラスルツボおよびその製造方法 | |
| JP2021050139A (ja) | シリコン単結晶の製造方法 | |
| WO2008095111A3 (en) | Method and system for forming a higher purity semiconductor ingot using low purity semiconductor feedstock | |
| JP5500684B2 (ja) | シリカガラスルツボ及びその製造方法、シリコンインゴットの製造方法 | |
| TW200811319A (en) | Method for melting semiconductor wafer raw material and crystal growing method for semiconductor wafer | |
| JP2007153625A (ja) | 結晶化し易い石英ガラス部材とその用途 | |
| EP2067883A3 (en) | Vitreous silica crucible | |
| JP2014521585A5 (enExample) | ||
| JP4678667B2 (ja) | シリコン単結晶引上げ用石英ガラスルツボ及びその製造方法 | |
| JP5500689B2 (ja) | シリカガラスルツボ | |
| JP5453677B2 (ja) | シリカガラスルツボ、シリコンインゴットの製造方法 | |
| JP4601437B2 (ja) | 内表面が半結晶化した石英ガラスルツボとその製造方法 | |
| CN102858708B (zh) | 硅结晶生长用石英坩埚的涂敷方法及硅结晶生长用石英坩埚 | |
| JP2010042968A5 (enExample) | ||
| JP2004250305A (ja) | 湯面振動を抑制した石英ガラスルツボ | |
| JP2010202515A (ja) | シリコン単結晶引上げ用石英ガラスルツボの製造方法 | |
| JP4874888B2 (ja) | シリコン単結晶引上用石英ガラスルツボおよびその製造方法 |