TW201035392A - Quartz glass crucible for pulling silicon single crystal and method for producing silicon single crystal - Google Patents
Quartz glass crucible for pulling silicon single crystal and method for producing silicon single crystal Download PDFInfo
- Publication number
- TW201035392A TW201035392A TW099104108A TW99104108A TW201035392A TW 201035392 A TW201035392 A TW 201035392A TW 099104108 A TW099104108 A TW 099104108A TW 99104108 A TW99104108 A TW 99104108A TW 201035392 A TW201035392 A TW 201035392A
- Authority
- TW
- Taiwan
- Prior art keywords
- quartz glass
- crystallization
- glass crucible
- single crystal
- layer
- Prior art date
Links
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 title claims abstract description 132
- 239000013078 crystal Substances 0.000 title claims abstract description 103
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 12
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 title abstract description 7
- 229910052710 silicon Inorganic materials 0.000 title abstract description 7
- 239000010703 silicon Substances 0.000 title abstract description 7
- 238000002425 crystallisation Methods 0.000 claims abstract description 111
- 230000008025 crystallization Effects 0.000 claims abstract description 111
- KJTLSVCANCCWHF-UHFFFAOYSA-N Ruthenium Chemical group [Ru] KJTLSVCANCCWHF-UHFFFAOYSA-N 0.000 claims description 15
- 229910052707 ruthenium Inorganic materials 0.000 claims description 15
- 239000000463 material Substances 0.000 claims description 14
- 229910052684 Cerium Inorganic materials 0.000 claims description 10
- GWXLDORMOJMVQZ-UHFFFAOYSA-N cerium Chemical compound [Ce] GWXLDORMOJMVQZ-UHFFFAOYSA-N 0.000 claims description 10
- 239000011248 coating agent Substances 0.000 claims description 8
- 238000000576 coating method Methods 0.000 claims description 8
- 239000000843 powder Substances 0.000 claims description 8
- 238000002844 melting Methods 0.000 claims description 6
- 230000008018 melting Effects 0.000 claims description 6
- 230000002093 peripheral effect Effects 0.000 claims description 6
- 229910052732 germanium Inorganic materials 0.000 claims description 5
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 claims description 5
- 238000010438 heat treatment Methods 0.000 claims description 4
- OYPRJOBELJOOCE-UHFFFAOYSA-N Calcium Chemical compound [Ca] OYPRJOBELJOOCE-UHFFFAOYSA-N 0.000 claims description 2
- FYYHWMGAXLPEAU-UHFFFAOYSA-N Magnesium Chemical compound [Mg] FYYHWMGAXLPEAU-UHFFFAOYSA-N 0.000 claims description 2
- 229910052788 barium Inorganic materials 0.000 claims description 2
- DSAJWYNOEDNPEQ-UHFFFAOYSA-N barium atom Chemical compound [Ba] DSAJWYNOEDNPEQ-UHFFFAOYSA-N 0.000 claims description 2
- 229910052797 bismuth Inorganic materials 0.000 claims description 2
- JCXGWMGPZLAOME-UHFFFAOYSA-N bismuth atom Chemical compound [Bi] JCXGWMGPZLAOME-UHFFFAOYSA-N 0.000 claims description 2
- 229910052791 calcium Inorganic materials 0.000 claims description 2
- 239000011575 calcium Substances 0.000 claims description 2
- 229910000420 cerium oxide Inorganic materials 0.000 claims description 2
- 229910052749 magnesium Inorganic materials 0.000 claims description 2
- 239000011777 magnesium Substances 0.000 claims description 2
- BMMGVYCKOGBVEV-UHFFFAOYSA-N oxo(oxoceriooxy)cerium Chemical compound [Ce]=O.O=[Ce]=O BMMGVYCKOGBVEV-UHFFFAOYSA-N 0.000 claims description 2
- 229910052712 strontium Inorganic materials 0.000 claims description 2
- CIOAGBVUUVVLOB-UHFFFAOYSA-N strontium atom Chemical compound [Sr] CIOAGBVUUVVLOB-UHFFFAOYSA-N 0.000 claims description 2
- 230000000630 rising effect Effects 0.000 claims 1
- 239000011521 glass Substances 0.000 abstract description 18
- 239000000126 substance Substances 0.000 abstract description 15
- 239000003795 chemical substances by application Substances 0.000 abstract description 3
- 230000001737 promoting effect Effects 0.000 abstract description 3
- 239000007789 gas Substances 0.000 description 28
- 239000010453 quartz Substances 0.000 description 14
- 238000000034 method Methods 0.000 description 11
- 239000004575 stone Substances 0.000 description 9
- 230000000052 comparative effect Effects 0.000 description 6
- 239000000155 melt Substances 0.000 description 6
- 239000011148 porous material Substances 0.000 description 4
- 150000001875 compounds Chemical class 0.000 description 3
- 239000000243 solution Substances 0.000 description 3
- 241000282320 Panthera leo Species 0.000 description 2
- 206010036790 Productive cough Diseases 0.000 description 2
- 210000003298 dental enamel Anatomy 0.000 description 2
- 238000006073 displacement reaction Methods 0.000 description 2
- 239000004744 fabric Substances 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 238000004513 sizing Methods 0.000 description 2
- 239000006104 solid solution Substances 0.000 description 2
- 210000003802 sputum Anatomy 0.000 description 2
- 208000024794 sputum Diseases 0.000 description 2
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- 241000754688 Cercaria Species 0.000 description 1
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 1
- 239000004990 Smectic liquid crystal Substances 0.000 description 1
- 238000003723 Smelting Methods 0.000 description 1
- 230000003321 amplification Effects 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 150000001622 bismuth compounds Chemical class 0.000 description 1
- 239000013522 chelant Substances 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 238000005520 cutting process Methods 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 238000004090 dissolution Methods 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000000635 electron micrograph Methods 0.000 description 1
- 229910002804 graphite Inorganic materials 0.000 description 1
- 239000010439 graphite Substances 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 238000010348 incorporation Methods 0.000 description 1
- 229910052746 lanthanum Inorganic materials 0.000 description 1
- FZLIPJUXYLNCLC-UHFFFAOYSA-N lanthanum atom Chemical compound [La] FZLIPJUXYLNCLC-UHFFFAOYSA-N 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 235000013372 meat Nutrition 0.000 description 1
- 238000003199 nucleic acid amplification method Methods 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 238000010298 pulverizing process Methods 0.000 description 1
- 238000005204 segregation Methods 0.000 description 1
- 230000035939 shock Effects 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- 238000009751 slip forming Methods 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
- 230000008719 thickening Effects 0.000 description 1
- VWQVUPCCIRVNHF-UHFFFAOYSA-N yttrium atom Chemical compound [Y] VWQVUPCCIRVNHF-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03B—MANUFACTURE, SHAPING, OR SUPPLEMENTARY PROCESSES
- C03B19/00—Other methods of shaping glass
- C03B19/09—Other methods of shaping glass by fusing powdered glass in a shaping mould
- C03B19/095—Other methods of shaping glass by fusing powdered glass in a shaping mould by centrifuging, e.g. arc discharge in rotating mould
-
- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03B—MANUFACTURE, SHAPING, OR SUPPLEMENTARY PROCESSES
- C03B20/00—Processes specially adapted for the production of quartz or fused silica articles, not otherwise provided for
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
- C30B15/10—Crucibles or containers for supporting the melt
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/02—Elements
- C30B29/06—Silicon
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P40/00—Technologies relating to the processing of minerals
- Y02P40/50—Glass production, e.g. reusing waste heat during processing or shaping
- Y02P40/57—Improving the yield, e-g- reduction of reject rates
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
- Y10T117/10—Apparatus
- Y10T117/1024—Apparatus for crystallization from liquid or supercritical state
- Y10T117/1032—Seed pulling
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Organic Chemistry (AREA)
- Crystallography & Structural Chemistry (AREA)
- Metallurgy (AREA)
- Manufacturing & Machinery (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
- Glass Melting And Manufacturing (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2009028444A JP4866924B2 (ja) | 2009-02-10 | 2009-02-10 | シリコン単結晶引き上げ用の石英ガラスルツボおよびシリコン単結晶の製造方法 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| TW201035392A true TW201035392A (en) | 2010-10-01 |
Family
ID=42561797
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW099104108A TW201035392A (en) | 2009-02-10 | 2010-02-10 | Quartz glass crucible for pulling silicon single crystal and method for producing silicon single crystal |
Country Status (8)
| Country | Link |
|---|---|
| US (1) | US20120006254A1 (enExample) |
| EP (1) | EP2397582A1 (enExample) |
| JP (1) | JP4866924B2 (enExample) |
| KR (1) | KR20120013300A (enExample) |
| CN (1) | CN102317511A (enExample) |
| SG (1) | SG173618A1 (enExample) |
| TW (1) | TW201035392A (enExample) |
| WO (1) | WO2010092955A1 (enExample) |
Families Citing this family (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP5610570B2 (ja) * | 2010-07-20 | 2014-10-22 | 株式会社Sumco | シリカガラスルツボ、シリコンインゴットの製造方法 |
| CN102453956B (zh) * | 2010-10-27 | 2016-03-23 | 杭州先进石英材料有限公司 | 一种石英玻璃坩埚及其制备方法 |
| JP5509189B2 (ja) | 2011-12-26 | 2014-06-04 | ジルトロニック アクチエンゲゼルシャフト | 単結晶シリコンの製造方法 |
| JP5509188B2 (ja) | 2011-12-26 | 2014-06-04 | ジルトロニック アクチエンゲゼルシャフト | 単結晶シリコンの製造方法 |
| KR101680215B1 (ko) * | 2015-01-07 | 2016-11-28 | 주식회사 엘지실트론 | 실리콘 단결정 잉곳 제조 방법 및 그 제조방법에 의해 제조된 실리콘 단결정 잉곳 |
| KR101829291B1 (ko) * | 2016-08-05 | 2018-02-19 | 에스케이실트론 주식회사 | 도가니 및 이를 포함하는 단결정 성장 장치 |
| CN109477239A (zh) * | 2016-09-23 | 2019-03-15 | 胜高股份有限公司 | 石英玻璃坩埚及其制造方法以及使用了石英玻璃坩埚的单晶硅的制造方法 |
| TWI651283B (zh) * | 2017-04-28 | 2019-02-21 | 友達晶材股份有限公司 | 坩堝結構及其製作方法與矽晶結構及其製作方法 |
| DE102020000701A1 (de) * | 2020-02-03 | 2021-08-05 | Siltronic Ag | Quarzglastiegel zur Herstellung von Siliciumkristallen und Verfahren zur Herstellung von Quarzglastiegel |
| CN115142121B (zh) * | 2021-03-31 | 2023-06-20 | 晶科能源股份有限公司 | 提高复投单晶硅成晶率的方法及单晶硅制备装置 |
| JP7694149B2 (ja) * | 2021-05-25 | 2025-06-18 | 株式会社Sumco | 石英ガラスルツボ及びその製造方法並びにシリコン単結晶の製造方法 |
Family Cites Families (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2003095678A (ja) * | 2001-07-16 | 2003-04-03 | Heraeus Shin-Etsu America | シリコン単結晶製造用ドープ石英ガラスルツボ及びその製造方法 |
| US6641663B2 (en) * | 2001-12-12 | 2003-11-04 | Heracus Shin-Estu America | Silica crucible with inner layer crystallizer and method |
| JP2005145731A (ja) * | 2003-11-12 | 2005-06-09 | Kuramoto Seisakusho Co Ltd | 結晶化石英ルツボ |
| JP2006021985A (ja) * | 2004-06-10 | 2006-01-26 | Kuramoto Seisakusho Co Ltd | 石英ルツボ |
-
2009
- 2009-02-09 US US13/148,768 patent/US20120006254A1/en not_active Abandoned
- 2009-02-10 JP JP2009028444A patent/JP4866924B2/ja not_active Expired - Fee Related
-
2010
- 2010-02-09 EP EP10741232A patent/EP2397582A1/en not_active Withdrawn
- 2010-02-09 CN CN2010800073695A patent/CN102317511A/zh active Pending
- 2010-02-09 WO PCT/JP2010/051893 patent/WO2010092955A1/ja not_active Ceased
- 2010-02-09 KR KR1020117018531A patent/KR20120013300A/ko not_active Withdrawn
- 2010-02-09 SG SG2011057502A patent/SG173618A1/en unknown
- 2010-02-10 TW TW099104108A patent/TW201035392A/zh unknown
Also Published As
| Publication number | Publication date |
|---|---|
| WO2010092955A1 (ja) | 2010-08-19 |
| EP2397582A1 (en) | 2011-12-21 |
| JP4866924B2 (ja) | 2012-02-01 |
| US20120006254A1 (en) | 2012-01-12 |
| CN102317511A (zh) | 2012-01-11 |
| KR20120013300A (ko) | 2012-02-14 |
| JP2010184819A (ja) | 2010-08-26 |
| SG173618A1 (en) | 2011-09-29 |
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