JP2010183005A - 搬送チャンバ及びパーティクル付着防止方法 - Google Patents
搬送チャンバ及びパーティクル付着防止方法 Download PDFInfo
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- 238000012546 transfer Methods 0.000 title claims abstract description 106
- 239000002245 particle Substances 0.000 title claims abstract description 80
- 238000000034 method Methods 0.000 title claims abstract description 59
- 230000008021 deposition Effects 0.000 title abstract 2
- 239000000758 substrate Substances 0.000 claims abstract description 82
- 230000005611 electricity Effects 0.000 claims abstract description 4
- 238000012545 processing Methods 0.000 claims description 93
- 230000006837 decompression Effects 0.000 claims description 23
- 230000008569 process Effects 0.000 claims description 18
- 230000003068 static effect Effects 0.000 claims description 14
- 238000010926 purge Methods 0.000 claims description 11
- 230000009467 reduction Effects 0.000 claims description 9
- 230000008030 elimination Effects 0.000 claims description 8
- 238000003379 elimination reaction Methods 0.000 claims description 8
- 230000004308 accommodation Effects 0.000 claims description 2
- 235000012431 wafers Nutrition 0.000 description 142
- 239000007789 gas Substances 0.000 description 109
- 239000004065 semiconductor Substances 0.000 description 38
- 150000002500 ions Chemical class 0.000 description 23
- 230000006870 function Effects 0.000 description 15
- 238000005530 etching Methods 0.000 description 9
- 238000013507 mapping Methods 0.000 description 8
- 230000008859 change Effects 0.000 description 6
- 238000003860 storage Methods 0.000 description 6
- 238000007599 discharging Methods 0.000 description 5
- 238000001020 plasma etching Methods 0.000 description 5
- 238000010586 diagram Methods 0.000 description 4
- 230000000694 effects Effects 0.000 description 4
- 230000002265 prevention Effects 0.000 description 4
- 230000003749 cleanliness Effects 0.000 description 3
- 230000007246 mechanism Effects 0.000 description 3
- 238000006386 neutralization reaction Methods 0.000 description 3
- 238000000752 ionisation method Methods 0.000 description 2
- 230000007935 neutral effect Effects 0.000 description 2
- 230000005856 abnormality Effects 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 238000001312 dry etching Methods 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 230000009191 jumping Effects 0.000 description 1
- 239000004973 liquid crystal related substance Substances 0.000 description 1
- 238000012423 maintenance Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 238000000059 patterning Methods 0.000 description 1
- 230000001737 promoting effect Effects 0.000 description 1
- 230000007704 transition Effects 0.000 description 1
- 238000009281 ultraviolet germicidal irradiation Methods 0.000 description 1
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Abstract
【解決手段】基板処理システム1において、基板処理部2と大気系搬送部3との間に設けられる搬送チャンバ4は、被処理基板であるウエハWを収容するチャンバ本体51を備えている。チャンバ本体51は、給気システム52と排気装置53によって減圧環境と大気圧環境とで切り替え可能である。給気システム52は、チャンバ本体51の外側に、イオン化ガスを発生させるイオン化装置60を備えている。イオン化装置60で発生させたイオン化ガスをチャンバ本体51に供給して、チャンバ本体51に収容されたウエハWを除電する。
【選択図】図1
Description
2 基板処理部(減圧処理部)
3 大気系搬送部(大気系保持部)
4 搬送チャンバ
5,6 ゲートバルブ
10 処理チャンバ
11 サセプタ
40 フープ
42 ローダモジュール
50 移載アーム
51 チャンバ本体
52 給気システム
53 排気装置
56 制御バルブ
57 真空ポンプ
58 制御バルブ
59 排気口
60 イオン化装置
61 ブレイクフィルタ
W (半導体)ウエハ
Claims (7)
- 減圧環境において被処理基板に所定の処理を施す減圧処理部と被処理基板を大気圧環境において保持する大気系保持部との間に設けられ、前記減圧処理部と前記大気系保持部との間で前記被処理基板を搬送する搬送チャンバであって、
前記被処理基板を収容するチャンバ本体と、
前記チャンバ本体の内部を前記減圧環境にするために前記チャンバ本体からの排気を行う排気装置と、
前記チャンバ本体の内部を前記大気圧環境にするために所定のガスを前記チャンバ本体に供給するガス供給装置と、
前記所定のガスをイオン化するイオン化装置を前記チャンバ本体の外部に具備し、前記イオン化装置において発生させたイオン化ガスを前記チャンバ本体に供給するイオン化ガス供給装置と、
を備えることを特徴とする搬送チャンバ。 - 前記イオン化装置は前記ガス供給装置に取り付けられており、
前記ガス供給装置によって前記チャンバ本体に供給されるガスが、前記イオン化装置によってイオン化されて前記チャンバ本体に供給されることを特徴とする請求項1記載の搬送チャンバ。 - 減圧環境において被処理基板に所定の処理を施す減圧処理部と被処理基板を大気圧環境において保持する大気系保持部との間に設けられ、内部が減圧環境と大気圧環境とで切り替え可能なチャンバ本体を備えた、前記減圧処理部と前記大気系保持部との間で被処理基板を搬送するための搬送チャンバを用いて前記減圧処理部と前記大気系保持部との間で前記被処理基板を搬送する際に、前記被処理基板へのパーティクル付着を防止する方法であって、
前記チャンバ本体に被処理基板を収容する収容ステップと、
前記チャンバ本体の外部で発生させたイオン化ガスを前記チャンバ本体に供給して前記被処理基板を除電するステップと、
を有することを特徴とするパーティクル付着防止方法。 - 前記収容ステップは、前記被処理基板が前記減圧処理部から前記チャンバ本体へ搬入されることにより行われ、
前記除電ステップでは、前記チャンバ本体からの排気を伴う前記チャンバ本体への前記イオン化ガスの供給を行うことによって、前記チャンバ本体を前記減圧環境から前記大気圧環境へと移行させることを特徴とする請求項3記載のパーティクル付着防止方法。 - 前記収容ステップは、前記被処理基板が前記大気系保持部から前記チャンバ本体へ搬入されることにより行われ、
前記除電ステップでは、前記チャンバ本体に前記イオン化ガスを供給しながら前記チャンバ本体からの排気を行うことによって、前記チャンバ本体の内部を前記大気圧環境から前記減圧環境へと移行させることを特徴とする請求項3記載のパーティクル付着防止方法。 - 前記除電ステップにおいて、減圧と昇圧とを繰り返すことによって前記チャンバ本体の内部を前記大気圧環境から前記減圧環境へと移行させることを特徴とする請求項5記載のパーティクル付着防止方法。
- 前記除電ステップでは、前記イオン化ガスとして、前記チャンバ本体の圧力を調整するために前記チャンバ本体に供給されるパージガスをイオン化させたガスを用いることを特徴とする請求項3乃至6のいずれか1項に記載のパーティクル付着防止方法。
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JP2009027369A JP5295808B2 (ja) | 2009-02-09 | 2009-02-09 | パーティクル付着防止方法及び被処理基板の搬送方法 |
US12/700,771 US9385015B2 (en) | 2009-02-09 | 2010-02-05 | Transfer chamber and method for preventing adhesion of particle |
TW099103838A TWI457987B (zh) | 2009-02-09 | 2010-02-08 | Transport chamber and particle attachment prevention method |
KR1020100011629A KR101327671B1 (ko) | 2009-02-09 | 2010-02-08 | 파티클 부착 방지 방법 및 피처리 기판의 반송 방법 |
CN2010101139032A CN101800187B (zh) | 2009-02-09 | 2010-02-09 | 搬送腔室和颗粒附着防止方法 |
US15/201,161 US10115614B2 (en) | 2009-02-09 | 2016-07-01 | Transfer chamber and method for preventing adhesion of particle |
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WO2023175689A1 (ja) * | 2022-03-14 | 2023-09-21 | 株式会社日立ハイテク | 真空処理装置及び異物排出方法 |
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CN101800187A (zh) | 2010-08-11 |
KR101327671B1 (ko) | 2013-11-08 |
TWI457987B (zh) | 2014-10-21 |
US9385015B2 (en) | 2016-07-05 |
US10115614B2 (en) | 2018-10-30 |
US20160315001A1 (en) | 2016-10-27 |
JP5295808B2 (ja) | 2013-09-18 |
KR20100091128A (ko) | 2010-08-18 |
CN101800187B (zh) | 2013-02-06 |
US20100202093A1 (en) | 2010-08-12 |
TW201044447A (en) | 2010-12-16 |
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