JP2010182946A5 - - Google Patents

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Publication number
JP2010182946A5
JP2010182946A5 JP2009026384A JP2009026384A JP2010182946A5 JP 2010182946 A5 JP2010182946 A5 JP 2010182946A5 JP 2009026384 A JP2009026384 A JP 2009026384A JP 2009026384 A JP2009026384 A JP 2009026384A JP 2010182946 A5 JP2010182946 A5 JP 2010182946A5
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JP
Japan
Prior art keywords
region
semiconductor device
porosity region
low porosity
insulating film
Prior art date
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Application number
JP2009026384A
Other languages
English (en)
Japanese (ja)
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JP5147751B2 (ja
JP2010182946A (ja
Filing date
Publication date
Application filed filed Critical
Priority to JP2009026384A priority Critical patent/JP5147751B2/ja
Priority claimed from JP2009026384A external-priority patent/JP5147751B2/ja
Priority to PCT/JP2009/005681 priority patent/WO2010089818A1/ja
Publication of JP2010182946A publication Critical patent/JP2010182946A/ja
Publication of JP2010182946A5 publication Critical patent/JP2010182946A5/ja
Priority to US13/193,330 priority patent/US8502388B2/en
Application granted granted Critical
Publication of JP5147751B2 publication Critical patent/JP5147751B2/ja
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

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JP2009026384A 2009-02-06 2009-02-06 半導体装置の製造方法 Expired - Fee Related JP5147751B2 (ja)

Priority Applications (3)

Application Number Priority Date Filing Date Title
JP2009026384A JP5147751B2 (ja) 2009-02-06 2009-02-06 半導体装置の製造方法
PCT/JP2009/005681 WO2010089818A1 (ja) 2009-02-06 2009-10-28 半導体装置及びその製造方法
US13/193,330 US8502388B2 (en) 2009-02-06 2011-07-28 Semiconductor device and method for fabricating the same

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2009026384A JP5147751B2 (ja) 2009-02-06 2009-02-06 半導体装置の製造方法

Publications (3)

Publication Number Publication Date
JP2010182946A JP2010182946A (ja) 2010-08-19
JP2010182946A5 true JP2010182946A5 (enExample) 2011-06-16
JP5147751B2 JP5147751B2 (ja) 2013-02-20

Family

ID=42541744

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2009026384A Expired - Fee Related JP5147751B2 (ja) 2009-02-06 2009-02-06 半導体装置の製造方法

Country Status (3)

Country Link
US (1) US8502388B2 (enExample)
JP (1) JP5147751B2 (enExample)
WO (1) WO2010089818A1 (enExample)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9490165B2 (en) * 2010-12-30 2016-11-08 Globalfoundries Singapore Pte. Ltd. Reliable interconnect integration scheme
JP5925611B2 (ja) 2012-06-21 2016-05-25 ルネサスエレクトロニクス株式会社 半導体装置およびその製造方法
US9117822B1 (en) * 2014-04-29 2015-08-25 Globalfoundries Inc. Methods and structures for back end of line integration
KR102460075B1 (ko) * 2016-01-27 2022-10-31 삼성전자주식회사 반도체 장치 및 반도체 장치의 제조 방법
US10157841B2 (en) * 2017-04-17 2018-12-18 Micron Technology, Inc. Construction of integrated circuitry and a method of forming an elevationally-extending conductor laterally between a pair of structures
US9960114B1 (en) 2017-05-03 2018-05-01 Micron Technology, Inc. Structure of integrated circuitry and a method of forming a conductive via

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6780499B2 (en) * 2001-05-03 2004-08-24 International Business Machines Corporation Ordered two-phase dielectric film, and semiconductor device containing the same
TW550642B (en) 2001-06-12 2003-09-01 Toshiba Corp Semiconductor device with multi-layer interconnect and method fabricating the same
JP3657576B2 (ja) * 2001-06-12 2005-06-08 株式会社東芝 半導体装置の製造方法
JP2003273216A (ja) * 2002-03-18 2003-09-26 Sony Corp 半導体装置およびその製造方法
US6958524B2 (en) * 2003-11-06 2005-10-25 Taiwan Semiconductor Manufacturing Company, Ltd. Insulating layer having graded densification
JP2005142473A (ja) 2003-11-10 2005-06-02 Semiconductor Leading Edge Technologies Inc 半導体装置の製造方法
ATE511702T1 (de) * 2005-03-22 2011-06-15 Nxp Bv Seitenwandporenabdichtung für nichtleiter mit niedriger dielektrizitätskonstante
JP2007027436A (ja) * 2005-07-15 2007-02-01 Toshiba Corp 半導体装置およびその製造方法
WO2007032563A1 (ja) * 2005-09-16 2007-03-22 Nec Corporation 配線構造並びに半導体装置及びその製造方法
JP2008159835A (ja) * 2006-12-25 2008-07-10 Sony Corp 半導体装置の製造方法および半導体装置

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