ATE511702T1 - Seitenwandporenabdichtung für nichtleiter mit niedriger dielektrizitätskonstante - Google Patents

Seitenwandporenabdichtung für nichtleiter mit niedriger dielektrizitätskonstante

Info

Publication number
ATE511702T1
ATE511702T1 AT06727680T AT06727680T ATE511702T1 AT E511702 T1 ATE511702 T1 AT E511702T1 AT 06727680 T AT06727680 T AT 06727680T AT 06727680 T AT06727680 T AT 06727680T AT E511702 T1 ATE511702 T1 AT E511702T1
Authority
AT
Austria
Prior art keywords
porogen
low
ulk
opening
porous
Prior art date
Application number
AT06727680T
Other languages
English (en)
Inventor
Willem F A Besling
Original Assignee
Nxp Bv
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nxp Bv filed Critical Nxp Bv
Application granted granted Critical
Publication of ATE511702T1 publication Critical patent/ATE511702T1/de

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H01L21/76801—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing
    • H01L21/76802—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing by forming openings in dielectrics
    • H01L21/76807—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing by forming openings in dielectrics for dual damascene structures
    • H01L21/76808—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing by forming openings in dielectrics for dual damascene structures involving intermediate temporary filling with material
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H01L21/76801—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing
    • H01L21/76802—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing by forming openings in dielectrics
    • H01L21/76807—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing by forming openings in dielectrics for dual damascene structures
    • H01L21/76811—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing by forming openings in dielectrics for dual damascene structures involving multiple stacked pre-patterned masks
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H01L21/76801—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing
    • H01L21/76802—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing by forming openings in dielectrics
    • H01L21/76814—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing by forming openings in dielectrics post-treatment or after-treatment, e.g. cleaning or removal of oxides on underlying conductors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H01L21/76801—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing
    • H01L21/76822—Modification of the material of dielectric layers, e.g. grading, after-treatment to improve the stability of the layers, to increase their density etc.
    • H01L21/76826—Modification of the material of dielectric layers, e.g. grading, after-treatment to improve the stability of the layers, to increase their density etc. by contacting the layer with gases, liquids or plasmas
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2221/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
    • H01L2221/10—Applying interconnections to be used for carrying current between separate components within a device
    • H01L2221/1005—Formation and after-treatment of dielectrics
    • H01L2221/1052—Formation of thin functional dielectric layers
    • H01L2221/1057—Formation of thin functional dielectric layers in via holes or trenches
    • H01L2221/1063—Sacrificial or temporary thin dielectric films in openings in a dielectric

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Plasma & Fusion (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Formation Of Insulating Films (AREA)
AT06727680T 2005-03-22 2006-03-20 Seitenwandporenabdichtung für nichtleiter mit niedriger dielektrizitätskonstante ATE511702T1 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
EP05300202 2005-03-22
PCT/IB2006/050846 WO2006100632A1 (en) 2005-03-22 2006-03-20 Side wall pore sealing for low-k dielectrics

Publications (1)

Publication Number Publication Date
ATE511702T1 true ATE511702T1 (de) 2011-06-15

Family

ID=36580391

Family Applications (1)

Application Number Title Priority Date Filing Date
AT06727680T ATE511702T1 (de) 2005-03-22 2006-03-20 Seitenwandporenabdichtung für nichtleiter mit niedriger dielektrizitätskonstante

Country Status (6)

Country Link
US (1) US8445382B2 (de)
EP (1) EP1864322B1 (de)
JP (1) JP2008535212A (de)
CN (1) CN100565833C (de)
AT (1) ATE511702T1 (de)
WO (1) WO2006100632A1 (de)

Families Citing this family (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8058183B2 (en) * 2008-06-23 2011-11-15 Applied Materials, Inc. Restoring low dielectric constant film properties
JP5147751B2 (ja) * 2009-02-06 2013-02-20 パナソニック株式会社 半導体装置の製造方法
US8304863B2 (en) * 2010-02-09 2012-11-06 International Business Machines Corporation Electromigration immune through-substrate vias
JP5636277B2 (ja) * 2010-12-27 2014-12-03 富士フイルム株式会社 多孔質絶縁膜及びその製造方法
US20130171819A1 (en) * 2011-12-28 2013-07-04 Toshiba America Electronic Components, Inc. Methods for integration of metal/dielectric interconnects
US8871639B2 (en) 2013-01-04 2014-10-28 Taiwan Semiconductor Manufacturing Company, Ltd. Semiconductor devices and methods of manufacture thereof
CN104143524A (zh) * 2013-05-07 2014-11-12 中芯国际集成电路制造(上海)有限公司 一种半导体器件的制造方法
US8932934B2 (en) * 2013-05-28 2015-01-13 Global Foundries Inc. Methods of self-forming barrier integration with pore stuffed ULK material
US20150091172A1 (en) * 2013-10-01 2015-04-02 Taiwan Semiconductor Manufacturing Co., Ltd. Pore sealing techniques for porous low-k dielectric interconnect
KR102110247B1 (ko) 2013-11-29 2020-05-13 삼성전자주식회사 관통전극을 갖는 반도체 소자 및 그 제조방법
US9093387B1 (en) 2014-01-08 2015-07-28 International Business Machines Corporation Metallic mask patterning process for minimizing collateral etch of an underlayer
KR102272553B1 (ko) 2015-01-19 2021-07-02 삼성전자주식회사 반도체 장치 및 이의 제조 방법
WO2017052559A1 (en) * 2015-09-24 2017-03-30 Intel Corporation Methods, apparatuses and systems for integrated circuit structures with a replacement inter-layer dielectric (ild)
CN105390384B (zh) * 2015-10-29 2018-05-01 上海集成电路研发中心有限公司 一种无应力电化学抛光铜时去除二氧化硅的方法
US9685366B1 (en) * 2016-04-21 2017-06-20 International Business Machines Corporation Forming chamferless vias using thermally decomposable porefiller
US10867843B2 (en) * 2016-12-05 2020-12-15 Taiwan Semiconductor Manufacturing Co., Ltd. Method and system for fabrication semiconductor device
JP7067424B2 (ja) * 2017-12-27 2022-05-16 東京エレクトロン株式会社 エッチング方法及びエッチング装置
US11361974B2 (en) 2020-09-10 2022-06-14 United Microelectronics Corp. Method for forming semiconductor structure

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6703324B2 (en) 2000-12-21 2004-03-09 Intel Corporation Mechanically reinforced highly porous low dielectric constant films
US6528409B1 (en) 2002-04-29 2003-03-04 Advanced Micro Devices, Inc. Interconnect structure formed in porous dielectric material with minimized degradation and electromigration
JP2004274020A (ja) 2002-09-24 2004-09-30 Rohm & Haas Electronic Materials Llc 電子デバイス製造
JP2004200203A (ja) * 2002-12-16 2004-07-15 Semiconductor Leading Edge Technologies Inc 半導体装置及びその製造方法
US7157373B2 (en) * 2003-12-11 2007-01-02 Infineon Technologies Ag Sidewall sealing of porous dielectric materials
JP2005197606A (ja) * 2004-01-09 2005-07-21 Toshiba Corp 半導体装置およびその製造方法

Also Published As

Publication number Publication date
CN101164160A (zh) 2008-04-16
EP1864322A1 (de) 2007-12-12
WO2006100632A1 (en) 2006-09-28
US20090321945A1 (en) 2009-12-31
EP1864322B1 (de) 2011-06-01
CN100565833C (zh) 2009-12-02
US8445382B2 (en) 2013-05-21
JP2008535212A (ja) 2008-08-28

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