JP2010177587A - 電子増倍機能内蔵型の固体撮像素子 - Google Patents
電子増倍機能内蔵型の固体撮像素子 Download PDFInfo
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- 239000004065 semiconductor Substances 0.000 claims abstract description 93
- 230000027756 respiratory electron transport chain Effects 0.000 claims abstract description 13
- 238000003384 imaging method Methods 0.000 claims description 48
- 238000005036 potential barrier Methods 0.000 claims description 22
- 239000000758 substrate Substances 0.000 description 19
- 239000012535 impurity Substances 0.000 description 15
- 238000002955 isolation Methods 0.000 description 10
- 238000010586 diagram Methods 0.000 description 4
- 238000005513 bias potential Methods 0.000 description 3
- 238000000034 method Methods 0.000 description 3
- 229920000070 poly-3-hydroxybutyrate Polymers 0.000 description 3
- 241000293849 Cordylanthus Species 0.000 description 2
- 230000004888 barrier function Effects 0.000 description 2
- 239000000969 carrier Substances 0.000 description 2
- 230000008859 change Effects 0.000 description 2
- 238000009792 diffusion process Methods 0.000 description 2
- 230000005684 electric field Effects 0.000 description 2
- 238000009413 insulation Methods 0.000 description 2
- 206010034972 Photosensitivity reaction Diseases 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 238000005468 ion implantation Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 230000036211 photosensitivity Effects 0.000 description 1
- 230000008569 process Effects 0.000 description 1
- 230000004044 response Effects 0.000 description 1
- 238000003860 storage Methods 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/148—Charge coupled imagers
- H01L27/14887—Blooming suppression
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/14609—Pixel-elements with integrated switching, control, storage or amplification elements
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- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/1464—Back illuminated imager structures
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- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/148—Charge coupled imagers
- H01L27/14806—Structural or functional details thereof
- H01L27/14812—Special geometry or disposition of pixel-elements, address lines or gate-electrodes
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
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- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/148—Charge coupled imagers
- H01L27/14831—Area CCD imagers
- H01L27/1485—Frame transfer
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- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/762—Charge transfer devices
- H01L29/765—Charge-coupled devices
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- H01L29/76816—Output structures
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- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
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- Solid State Image Pick-Up Elements (AREA)
- Transforming Light Signals Into Electric Signals (AREA)
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Abstract
【解決手段】この電子増倍機能内蔵型の固体撮像素子においては、増倍レジスタEMにおける電子転送方向に垂直な断面内において、絶縁層2は、中央領域の厚みよりも、両サイド部の厚みが大きくなっており、N型の半導体領域1Cの中央領域と両サイド部との境界において一対のオーバーフロードレイン1Nが形成され、それぞれのオーバーフロードレイン1Nは、増倍レジスタEMにおける電子転送方向に沿って延びている。オーバーフローゲート電極Gは、絶縁層2の薄い部分から厚い部分にかけて延びており、また、各転送電極8(8A,8B)の長手方向の両端部と絶縁層2との間に介在し、各電極8(8A,8B)に対するシールド電極としても機能している。
【選択図】図8
Description
第2形態の増倍レジスタEMは、第1形態と比較して、オーバーフローゲートGが無い点と、オーバーフロードレイン1Nの外側を囲むように、ポテンシャル障壁領域1nが形成されている点である。その他の構成は、第1形態と同一である。
・P型半導体基板1Aの不純物濃度CP(1A)=1×1017〜1×1019/cm3
・P型エピタキシャル層1Bの不純物濃度CP(1B)=1×1011〜1×1016/cm3
・N型半導体領域1Cの不純物濃度CN(1C)=1×1012〜1×1017/cm3
・オーバーフロードレイン1Nの不純物濃度CN(1N)=1×1017〜1×1020/cm3
・ポテンシャル障壁1nの不純物濃度CN(1n)=1×1011〜1×1017/cm3
ここで、不純物濃度Cは以下の関係を満たしている。
・CP(1A)>CN(1C)>CP(1B)
・t(1A)>t(1B)>t(1C)
Claims (4)
- 撮像領域と、
前記撮像領域からの電子を転送する水平シフトレジスタと、
前記水平シフトレジスタからの電子を増倍する増倍レジスタと、
を備え、
前記増倍レジスタは、
半導体領域と、
前記半導体領域上に形成された絶縁層と、
前記絶縁層上に隣接して形成された複数の転送電極と、
前記転送電極間に配置され直流電位が印加されるDC電極と、
を備え、
前記増倍レジスタにおける電子転送方向に垂直な断面内において、前記絶縁層は、中央領域の厚みよりも、両サイド部の厚みが大きくなっており、前記半導体領域の前記中央領域と前記両サイド部との境界において一対のオーバーフロードレインが形成され、
それぞれの前記オーバーフロードレインは、前記増倍レジスタにおける電子転送方向に沿って延びている、
ことを特徴とする電子増倍機能内蔵型の固体撮像素子。 - 前記DC電極の次段に位置する前記転送電極を増倍電極とし、前記増倍電極及び前記オーバーフロードレインから絶縁され、且つ、前記増倍電極と前記オーバーフロードレインとの間に介在するオーバーフローゲート電極を更に備える、
ことを特徴とする請求項1に記載の電子増倍機能内蔵型の固体撮像素子。 - 前記オーバーフロードレインと前記半導体領域との間に、前記半導体領域から前記オーバーフロードレインへの電子の流入を阻害するポテンシャル障壁領域を備えている、
ことを特徴とする請求項1に記載の電子増倍機能内蔵型の固体撮像素子。 - 前記半導体領域はN型半導体からなり、
前記ポテンシャル障壁領域は、前記半導体領域よりも低濃度のN型半導体からなり、
前記オーバーフロードレインは、前記半導体領域よりも高濃度のN型半導体からなる、
ことを特徴とする請求項3に記載の電子増倍機能内蔵型の固体撮像素子。
Priority Applications (8)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2009020924A JP5243983B2 (ja) | 2009-01-30 | 2009-01-30 | 電子増倍機能内蔵型の固体撮像素子 |
EP10735832A EP2264766B1 (en) | 2009-01-30 | 2010-01-27 | Solid-state image sensing device containing electron multiplication function |
US12/920,119 US8466498B2 (en) | 2009-01-30 | 2010-01-27 | Solid state image device having a pair of overflow drains extends along the electron transfer direction at a boundary between channel region and channel stop isolation regions of the multiplication register |
KR1020107019015A KR101064066B1 (ko) | 2009-01-30 | 2010-01-27 | 전자 증배 기능 내장형의 고체 촬상 소자 |
PCT/JP2010/051037 WO2010087366A1 (ja) | 2009-01-30 | 2010-01-27 | 電子増倍機能内蔵型の固体撮像素子 |
AT10735832T ATE557422T1 (de) | 2009-01-30 | 2010-01-27 | Festkörper-bilderfassungsgerät mit elektronenmultiplikationsfunktion |
CN2010800011699A CN101960599B (zh) | 2009-01-30 | 2010-01-27 | 内建电子倍增功能型的固体摄像元件 |
TW99102723A TWI470781B (zh) | 2009-01-30 | 2010-01-29 | Built-in electronic multiplier functional type of solid-state imaging components |
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JP2009020924A JP5243983B2 (ja) | 2009-01-30 | 2009-01-30 | 電子増倍機能内蔵型の固体撮像素子 |
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JP2010177587A true JP2010177587A (ja) | 2010-08-12 |
JP5243983B2 JP5243983B2 (ja) | 2013-07-24 |
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US (1) | US8466498B2 (ja) |
EP (1) | EP2264766B1 (ja) |
JP (1) | JP5243983B2 (ja) |
KR (1) | KR101064066B1 (ja) |
CN (1) | CN101960599B (ja) |
AT (1) | ATE557422T1 (ja) |
TW (1) | TWI470781B (ja) |
WO (1) | WO2010087366A1 (ja) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2013093562A (ja) * | 2011-09-26 | 2013-05-16 | Parkes Christopher | 枯渇型電荷増倍ccd画像センサ |
WO2022123903A1 (ja) * | 2020-12-07 | 2022-06-16 | 浜松ホトニクス株式会社 | 光電変換装置 |
Families Citing this family (4)
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JP5330001B2 (ja) * | 2009-01-30 | 2013-10-30 | 浜松ホトニクス株式会社 | 固体撮像装置 |
CN105611197B (zh) * | 2015-12-23 | 2018-08-17 | 中国科学院长春光学精密机械与物理研究所 | 无抗溢出功能帧转移ccd的抗饱和读出方法 |
JP6991981B2 (ja) | 2016-02-24 | 2022-01-13 | マジック リープ, インコーポレイテッド | 光エミッタのための薄型相互接続子 |
CN109788901B (zh) | 2016-07-25 | 2024-01-02 | 奇跃公司 | 光场处理器系统 |
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- 2009-01-30 JP JP2009020924A patent/JP5243983B2/ja active Active
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- 2010-01-27 KR KR1020107019015A patent/KR101064066B1/ko active IP Right Grant
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- 2010-01-27 CN CN2010800011699A patent/CN101960599B/zh active Active
- 2010-01-27 EP EP10735832A patent/EP2264766B1/en active Active
- 2010-01-27 WO PCT/JP2010/051037 patent/WO2010087366A1/ja active Application Filing
- 2010-01-27 AT AT10735832T patent/ATE557422T1/de active
- 2010-01-29 TW TW99102723A patent/TWI470781B/zh active
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WO2022123903A1 (ja) * | 2020-12-07 | 2022-06-16 | 浜松ホトニクス株式会社 | 光電変換装置 |
Also Published As
Publication number | Publication date |
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CN101960599A (zh) | 2011-01-26 |
EP2264766A4 (en) | 2011-03-09 |
EP2264766A1 (en) | 2010-12-22 |
US20110186913A1 (en) | 2011-08-04 |
ATE557422T1 (de) | 2012-05-15 |
TWI470781B (zh) | 2015-01-21 |
EP2264766B1 (en) | 2012-05-09 |
US8466498B2 (en) | 2013-06-18 |
JP5243983B2 (ja) | 2013-07-24 |
KR101064066B1 (ko) | 2011-09-08 |
WO2010087366A1 (ja) | 2010-08-05 |
CN101960599B (zh) | 2012-11-07 |
KR20100107061A (ko) | 2010-10-04 |
TW201103140A (en) | 2011-01-16 |
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