JP2010123696A5 - - Google Patents

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Publication number
JP2010123696A5
JP2010123696A5 JP2008294913A JP2008294913A JP2010123696A5 JP 2010123696 A5 JP2010123696 A5 JP 2010123696A5 JP 2008294913 A JP2008294913 A JP 2008294913A JP 2008294913 A JP2008294913 A JP 2008294913A JP 2010123696 A5 JP2010123696 A5 JP 2010123696A5
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JP
Japan
Prior art keywords
semiconductor device
element region
coupling portion
manufacturing
stacked
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JP2008294913A
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English (en)
Japanese (ja)
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JP2010123696A (ja
JP5526529B2 (ja
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Priority to JP2008294913A priority Critical patent/JP5526529B2/ja
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Publication of JP2010123696A5 publication Critical patent/JP2010123696A5/ja
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JP2008294913A 2008-11-18 2008-11-18 積層半導体装置及び積層半導体装置の製造方法 Active JP5526529B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2008294913A JP5526529B2 (ja) 2008-11-18 2008-11-18 積層半導体装置及び積層半導体装置の製造方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2008294913A JP5526529B2 (ja) 2008-11-18 2008-11-18 積層半導体装置及び積層半導体装置の製造方法

Publications (3)

Publication Number Publication Date
JP2010123696A JP2010123696A (ja) 2010-06-03
JP2010123696A5 true JP2010123696A5 (enrdf_load_stackoverflow) 2012-12-06
JP5526529B2 JP5526529B2 (ja) 2014-06-18

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JP2008294913A Active JP5526529B2 (ja) 2008-11-18 2008-11-18 積層半導体装置及び積層半導体装置の製造方法

Country Status (1)

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JP (1) JP5526529B2 (enrdf_load_stackoverflow)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3099906B2 (ja) 1990-04-27 2000-10-16 日本ビクター株式会社 光ピックアップ
JP5533398B2 (ja) * 2010-07-27 2014-06-25 富士通セミコンダクター株式会社 半導体装置の製造方法
JP2014207252A (ja) * 2011-08-17 2014-10-30 株式会社村田製作所 半導体装置およびその製造方法ならびに携帯電話機
US20230026676A1 (en) * 2021-07-23 2023-01-26 Taiwan Semiconductor Manufacturing Company, Ltd. Semiconductor device structure and method of formation

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6098654A (ja) * 1983-11-02 1985-06-01 Nec Corp 半導体装置の製造方法
JP3770631B2 (ja) * 1994-10-24 2006-04-26 株式会社ルネサステクノロジ 半導体装置の製造方法
TW473914B (en) * 2000-01-12 2002-01-21 Ibm Buried metal body contact structure and method for fabricating SOI MOSFET devices
JP2002026283A (ja) * 2000-06-30 2002-01-25 Seiko Epson Corp 多層構造のメモリ装置及びその製造方法
KR100418089B1 (ko) * 2001-06-21 2004-02-11 주식회사 하이닉스반도체 반도체 소자의 박막 트랜지스터 제조 방법
JP4869546B2 (ja) * 2003-05-23 2012-02-08 ルネサスエレクトロニクス株式会社 半導体装置
JP4606006B2 (ja) * 2003-09-11 2011-01-05 ルネサスエレクトロニクス株式会社 半導体装置の製造方法
CN101048868B (zh) * 2004-08-20 2010-06-09 佐伊科比株式会社 具有三维层叠结构的半导体器件的制造方法

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