JP2010070796A - 酸化亜鉛系ターゲット - Google Patents
酸化亜鉛系ターゲット Download PDFInfo
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Abstract
【解決手段】酸化亜鉛を主成分とし、チタン(Ti)及びガリウム(Ga)の両元素を含有し、両元素がチタン1.1at%以上又はガリウム4.5at%以上の範囲で含有されている。
【選択図】なし
Description
BET=3.59m2/gのZnO粉、BET=7.10m2/gのTiO2粉およびBET=13.45m2/gのGa2O3粉を全金属元素のモル数に対するTiおよびGaのモル数の比率(Ti/(Zn+Ti+Ga)、Ga/(Zn+Ti+Ga))が下記表1及び表2にサンプルA1〜A50として表すモル比に相当するような比率で全量約1.0kg用意し、これをボールミルで混合した。その後、バインダーとして4wt%ポリビニルアルコール水溶液を混合粉末に対し6.6wt%添加して混合し、コールドプレスして成形体を得た。
BET=3.59m2/gのZnO粉、BET=3.89m2/gのAl2O3粉を全金属元素のモル数に対するAlのモル数の比率(Al/(Zn+Al))が2.4at%に相当するような比率で全量約1.0kg用意し、これをボールミルで混合した。その後、バインダーとして4wt%ポリビニルアルコール水溶液を混合粉末に対し6.6wt%添加して混合し、コールドプレスして成形体を得た。
4インチカソードのDCマグネトロンスパッタ装置に各製造例のスパッタリングターゲット及びAZOスパッタリングターゲットをそれぞれ装着し、基板温度250℃、酸素分圧を0〜2.0sccmで0.5sccm刻みで変化させながら(0〜6.6×10-3 Paに相当)、透明導電膜を得た。
ターゲット寸法 :φ=100mm、t=6mm
スパッタ方式 :DCマグネトロンスパッタ
排気装置 :ロータリーポンプ+クライオポンプ
到達真空度 :3×10-5 Pa以下
Ar圧力 :4.0×10-1Pa
酸素圧力 :0〜6.6×10-3Pa
基板温度 :250℃
スパッタ電力 :130W (電力密度1.6W/cm2)
使用基板 :コーニング#1737(液晶ディスプレイ用ガラス)
50mm×50mm×0.8mmt
酸素分圧が0で成膜した各透明導電膜を、それぞれ10mm×10mmの大きさに切り出し、まず比抵抗をVan der Pauw法(東陽テクニカ製,ホール係数測定装置 ResiTest8300)によって測定し、その後恒温恒湿器内(ESPEC製PR−2KP)に封入し、60℃90%RH雰囲気中に250時間放置した後、再度比抵抗を測定し、放置前後における比抵抗の変化率を算出した。なお、恒温恒湿器内を昇降温させる際、温度と湿度をコントロールすることでサンプルが結露しないようにした。
この結果を表1及び表2に示す。
酸素分圧が0で成膜した各透明導電膜を、それぞれ10mm×10mmの大きさに切り出し、比抵抗をVan der Pauw法(東陽テクニカ製,ホール係数測定装置 ResiTest8300)によって測定した。
この結果を表1及び表2に示す。
酸素分圧が0で成膜した各透明導電膜を切り出し、Van der Pauw法によるホール係数測定(東陽テクニカ製,ホール係数測定装置 ResiTest8300)から、各膜のキャリア密度およびキャリア移動度をそれぞれ測定した。
この結果を表1及び表2に示す。
Claims (3)
- 酸化亜鉛を主成分とし、チタン(Ti)及びガリウム(Ga)の両元素を含有し、両元素がチタン1.1at%以上又はガリウム4.5at%以上の範囲で含有されている酸化物焼結体を具備することを特徴とする酸化亜鉛系ターゲット。
- 請求項1記載の酸化亜鉛系ターゲットにおいて、ガリウムの含有量y(at%)が、チタンの含有量x(at%)で表される値(−2x+10.4)以下の範囲で且つチタンの含有量x(at%)で表される値(−0.5x+1.1)以上の範囲にあることを特徴とする酸化亜鉛系ターゲット。
- 請求項1又は2記載の酸化亜鉛系ターゲットにおいて、ガリウムの含有量y(at%)が、チタンの含有量x(at%)で表される値(−x+3.4)以下、(x−0.9)以下、または(−2.3x+10.1)以上の範囲にあることを特徴とする酸化亜鉛系ターゲット。
Priority Applications (5)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2008238751A JP4295811B1 (ja) | 2008-09-17 | 2008-09-17 | 酸化亜鉛系ターゲット |
| TW098131168A TWI396675B (zh) | 2008-09-17 | 2009-09-16 | 氧化鋅系靶材 |
| KR1020090087378A KR100958665B1 (ko) | 2008-09-17 | 2009-09-16 | 산화아연계 타깃 |
| CN2009102584923A CN101914754B (zh) | 2008-09-17 | 2009-09-17 | 氧化锌类靶 |
| US12/561,715 US7790644B2 (en) | 2008-09-17 | 2009-09-17 | Zinc-oxide-based target |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2008238751A JP4295811B1 (ja) | 2008-09-17 | 2008-09-17 | 酸化亜鉛系ターゲット |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JP4295811B1 JP4295811B1 (ja) | 2009-07-15 |
| JP2010070796A true JP2010070796A (ja) | 2010-04-02 |
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2008238751A Active JP4295811B1 (ja) | 2008-09-17 | 2008-09-17 | 酸化亜鉛系ターゲット |
Country Status (5)
| Country | Link |
|---|---|
| US (1) | US7790644B2 (ja) |
| JP (1) | JP4295811B1 (ja) |
| KR (1) | KR100958665B1 (ja) |
| CN (1) | CN101914754B (ja) |
| TW (1) | TWI396675B (ja) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2009298649A (ja) * | 2008-06-13 | 2009-12-24 | Sumitomo Metal Mining Co Ltd | 酸化物焼結体、ターゲット、およびそれを用いて得られる透明導電膜、導電性積層体 |
| JP2011222687A (ja) * | 2010-04-08 | 2011-11-04 | Tosoh Corp | 太陽電池 |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2008052913A (ja) * | 2006-08-22 | 2008-03-06 | Sumitomo Chemical Co Ltd | 透明導電膜およびその製造方法 |
| JP5585046B2 (ja) * | 2009-10-27 | 2014-09-10 | 東ソー株式会社 | 複合酸化物焼結体、ターゲット及び酸化物透明導電膜 |
| WO2011102425A1 (ja) * | 2010-02-18 | 2011-08-25 | 住友化学株式会社 | 酸化物焼結体、酸化物混合体、それらの製造方法およびそれらを用いたターゲット |
| US9111663B2 (en) * | 2010-09-29 | 2015-08-18 | Tosoh Corporation | Sintered composite oxide, manufacturing method therefor, sputtering target, transparent conductive oxide film, and manufacturing method therefor |
| US9885108B2 (en) * | 2012-08-07 | 2018-02-06 | Semiconductor Energy Laboratory Co., Ltd. | Method for forming sputtering target |
| KR101526157B1 (ko) * | 2014-12-08 | 2015-06-04 | 주식회사3차버너 | 업소용 대형 국솥 |
| JP6776931B2 (ja) * | 2016-03-23 | 2020-10-28 | 三菱マテリアル株式会社 | 積層反射電極膜、積層反射電極パターン、積層反射電極パターンの製造方法 |
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| JPH08264022A (ja) | 1995-03-27 | 1996-10-11 | Gunze Ltd | 透明導電膜 |
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| CN100363531C (zh) * | 2005-06-21 | 2008-01-23 | 山东大学 | 一种镓掺杂氧化锌透明导电膜的制备方法 |
| EP1897969B1 (en) * | 2005-06-28 | 2019-01-23 | JX Nippon Mining & Metals Corporation | Gallium oxide-zinc oxide sputtering target and method for forming a transparent conductive film using the target |
| JP4926977B2 (ja) * | 2005-12-08 | 2012-05-09 | Jx日鉱日石金属株式会社 | 酸化ガリウム−酸化亜鉛系焼結体スパッタリングターゲット |
-
2008
- 2008-09-17 JP JP2008238751A patent/JP4295811B1/ja active Active
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2009
- 2009-09-16 TW TW098131168A patent/TWI396675B/zh active
- 2009-09-16 KR KR1020090087378A patent/KR100958665B1/ko active Active
- 2009-09-17 CN CN2009102584923A patent/CN101914754B/zh active Active
- 2009-09-17 US US12/561,715 patent/US7790644B2/en not_active Expired - Fee Related
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2009298649A (ja) * | 2008-06-13 | 2009-12-24 | Sumitomo Metal Mining Co Ltd | 酸化物焼結体、ターゲット、およびそれを用いて得られる透明導電膜、導電性積層体 |
| JP2011222687A (ja) * | 2010-04-08 | 2011-11-04 | Tosoh Corp | 太陽電池 |
Also Published As
| Publication number | Publication date |
|---|---|
| US7790644B2 (en) | 2010-09-07 |
| KR100958665B1 (ko) | 2010-05-20 |
| KR20100032335A (ko) | 2010-03-25 |
| TWI396675B (zh) | 2013-05-21 |
| TW201022178A (en) | 2010-06-16 |
| JP4295811B1 (ja) | 2009-07-15 |
| CN101914754A (zh) | 2010-12-15 |
| US20100065424A1 (en) | 2010-03-18 |
| CN101914754B (zh) | 2012-10-31 |
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