590995 A7 — B7 五、發明說明（1) 曼明所屬的枝術頜域 本發明係有關導電性金屬氧化物燒結體、靶材、薄膜 及其用途。 習知技術 I T〇（Indium Tin Oxide，銦錫氧化物）薄膜係具有 高導電性、高透過性之特徵，再者亦可容易進行微細加工 ’故可用於平面嵌板顯示器用顯示電極 >、電阻膜方式之觸 板、太陽電池用窗材、抗靜電膜、防止電磁膜、防曇膜、 傳感器等廣泛範圍之領域。此種I T 0薄膜之製造方法可 大致區分成噴布熱分解法、CVD法等的化學成膜法及電 束蒸鍍法、離子電鍍法、濺鍍法等的化學成膜法。此等中 亦以物理成膜法，由於可容易成膜至大面積且可得高性能 之膜，故可被使用於各種領域。 利用物理成膜法製造I T〇薄膜之情形，至於所用的 原材料（濺鍍法之情形爲濺鍍靶材、真空蒸鍍法及離子電 鍍之情形爲蒸鍍材料）可使用由金屬銦及金屬錫而成的合 金或由氧化銦及氧化錫而成的複合氧化物。其中採用 I T〇複合氧化物之方法，與採用I τ合金之方法比較， 所得的膜之電阻値及透過率之經時變化小，可容易控制成 膜條，故成爲I T〇薄膜製造方法之主流。 隨著近年的資訊化社會之發展，前述平面嵌板顯示器 或觸板等被要求的技術水平正日益提高著。因此，即使對 I T 0薄膜在自前述不成爲問題之特性亦被稱成爲問題點 請 先 閱 讀 背 面 之 注 意 事 項 再 « 本 頁 裝 訂 經濟部智慧財產局員工消費合作社印制衣 本紙張尺度適用中國國家標準（CNS)A4規格（210 X 297公釐） -4- 590995 A7 B7 五、發明說明（2) 。具體而言，有I TO薄膜之膜構造及耐久性方面之問題 點。 先就膜之構造上的問題點予以說明。 若在室溫將I T 0薄膜成膜時，則除特別的條件外可 得不定形膜。然而，若考慮耐熱電阻安定性或耐熱性時， 則以使薄膜結晶化爲宜。I T〇之結晶化溫度爲1 4 0 t ，欲得結晶化膜有在此溫度以上之成膜溫度成膜的必要。 然而，經過採用濺鍍法或離子電鍍等電漿的成膜步驟，形 成結晶性I T〇薄膜之情形，於I T〇薄膜上形成有特徵 的領域構造。領域構造，係妥善對齊第1圖所示約結晶定 向的1 0〜3 0 n m之結晶粒予以集合，形成2 0 0〜 3 0 0 n m之結晶粒領域者。此領域構造，係爲具有各自 不同的結晶定向性之小晶粒（gram )的集合，主要定向成 (111)、 （110)或（100)。又，由於此定向 面有對電漿損害之耐性不同的特徵。因此，在成膜途中， 經予形成的膜由於電漿再予濺鍍之際的濺鍍速度會不同。 其結果，如第2圖所示，會形成有在（1 0 0 )面較厚， 在（1 1 0 )面較薄的表面呈凹凸的薄膜。此種構造之膜 ，係濺鍍法、或離子電鍍等使用電漿所製作的膜所被發現 者。 另一方面，I τ〇薄膜較常使用的薄膜顯示器，尤其 在液晶顯示器之領域，畫面之大型化及微細化係以急速的 趨勢進展著。因此，對透明導電膜之要求，乃被要求著大 面積、低電阻且可容易微細加工的膜。 請 先 閱 讀 背 面 之 注 意 事 項 再 K 本 頁 裝 訂 經濟部智慧財產局員工消費合作社印製 本紙張尺度適用中國國家標準（CNS)A4規格（210 x 297公爱） -5- 590995 A7 ____ B7 五、發明說明（3 ) 然而，採用可大面積均勻成膜的濺鍍法，在較高的基 板溫度成膜時，則已前述的表面之凹凸劇烈的膜會形成著 ’有容易發生蝕刻殘渣，亦即有在微細加工上形成不適當 的薄膜會形成的問題生成。 其次，對耐久性之問題點予以說明。I T〇薄膜係在 高溫或高濕之環境下，具有薄膜之電阻係數增加的問題點 。例如，關於耐熱性，藉由在大氣中於2 0 0 t以上之溫 度置於3 0分鐘，已知電阻係數會上升5〜3 0%。已關 於耐濕性方面，藉由在6 0 t：，9 0 % R Η置於5 0 0 小時，已知電阻係數會增加1 0〜2 0 0 %。 上述的電阻係數增加之現象，係I TO薄膜之膜厚愈 薄愈顯著。因此，以I TO薄膜較薄的膜厚使用之電阻膜 方式之觸板領域尤其被指成爲問題，乃成爲應予解決的重 要課題。 又’放電之安定性，爲使瘤節物（在氬氣及氧氣之混 合氣圍中連續將I T ◦靶材濺鍍時，於靶材表面上所形成 的黑色異物）發生量減低，乃有使I T 0燒結體之燒結密 度增加的硏究予以盛行著。例如日本特公平 5 - 3 0 9 0 5號般，在一氣壓以上的加壓氧氣圍中實施 燒結的方法，如日本特開平4 一 1 6 0 0 4 7號般，在氧 氣圍下1 3 5 0 °C以上的溫度熱處理平均粒徑〇 · 1 # ni 以下的氧化銦粉末及氧化錫粉末，將所得的熱處理粉末再 予粉碎後在5 0 0〜1 0 0 0 °C以上的溫度及1 〇 〇 k g / c m 2以上之壓力下的無氧氣圍中燒結的方法，如 i I I I J I--·1 I I I · i I 秦 . (請先閱讀背面之注意事項再e本頁) 「I訂： •線- 經濟部智慧財產局員工消費合作社印剩衣 本紙張尺度適用中國國家標準（CNS)A4規格（210 X 297公釐） -6 - 590995 A7 ___ B7 五、發明說明（4 ) U S P — 5 4 3 3 9 0 1號說明書內所提的添加燒結助劑 A 1 2 0 3 , 丫2〇3或1^1忌〇 〇 · 05〜0 · 25重量％ 進行燒結的方法等。然而，此等發明仍有未能解決上述的 與膜之平坦性，耐久性有關的問題點之問題存在。 發明欲解的課題 本發明之課題’係於以結晶化溫度以上的基板溫度形 成平面嵌板顯示器之透明電極等所用的> I τ ◦薄膜之情形 ’提供不具有領域構造的平坦，蝕刻特性優越的薄膜。又 即使在觸板類膜厚之較薄的領域使用之情形，提供耐熱性 、耐濕性優越，電阻係數之變化率較小的透明導電膜。 再者提供在形成此種薄膜之際所用的蒸鍍材料、濺鍍 靶材。 解決課題所採的手段 本發明人等對關於在I T ◦內摻雜有異種元素之導電 性金屬氧化物經予精心檢討的結果，發現於含有以鎂爲摻 經濟部智慧財產局員工消費合作社印製 :--------------裝------IT 訂_«| 九 ί (請先閱讀背面之注意事項再β本頁) 雜劑之I T〇薄膜，可解決上述問題點，以至完成本發明 〇 亦即，本發明係有關①實質上由銦、錫、鎂及氧而成 ，含有鎂以Mg / ( I n + Sn+Mg)之原子比在 2 _ 0〜2 0 · 〇 %之比例爲特徵之金屬氧化物燒結體， ②採用該燒結體之蒸鍍材料，③採用該燒結體之濺鍍靶材 ，④實質上由銦、錫、鎂及氧而成，含有鎂以Mg / ( 本紙張尺度適用中國國家標準（CNS)A4規格（210x 297公釐） 9 9 90 經濟部智慧財產局員工消費合作社印製 A7 ________B7______五、發明說明（5) I n + Sn+Mg)之原子比在2 · 0〜20 · 〇%之比 例爲特徵之透明導電性膜，及⑤含有該透明導電性膜而成 的機器者。 以下，詳細說明本發明。 與本發明有關的燒結體，由此燒結體而成的濺鍍靶材 、蒸鍍材料、薄膜及含有此薄膜而成的機器係以下述方法 製造。 至於製作含有鎂之I T〇燒結體的汸法，並未予特別 限制，惟至於供濺鍍靶材用的燒結體，所得的燒結體之密 度以在9 8 %以上爲宜，此種燒結體例如可以下述方法製 造。 且，本發明之相對密度（D )，係表示著對由 I η 2 0 a , Sn〇2&Mg〇之真密度之相加平均求得的 理論密度（d )之相對値。由相加平均求得的理論密度（ d )，係於革巴材組成，將I η 2〇3、 S η〇2及M g〇粉 末之混合量（g)各自設成a、b、c時，採用各自真密 度 7·179、 6.9 5. 3.65，（g/cm3)，由 d =(a + b + c ) ((a/7.179) + (b/ 6 · 9 5 ) + ( c / 3 · 6 5 ))求得。因此，若將燒結 體之測定密度設成d 1時，其相對密度D ( % )係以式： D 二（dl/d) X100 予以求得。 首先，進行粉末之混合。混合氧化銦粉末及氧化錫粉 末與氧化鎂粉末亦可，混合氧化錫固熔氧化銦粉末及氧化 鎂粉末亦可。此際，使用的粉末之平均粒徑若較大時，則 本紙張尺度適用中國國家標準（CNS)A4規格（210 X 297公釐） -8 - (請先閱讀背面之注意事項再本頁) 襄 7訂-.| 線· 590995 A7 ___ B7 五、發明說明（6) -----J---·-----裝--- * I (請先閱讀背面之注意事項再本頁) 燒結後的密度未充分提高，較難形成相對密度9 9 %以上 的燒結體，故使用的粉末之平均粒徑以在1 · 5 // m以下 爲宜。更宜爲0 · 1〜1 · 5em。在此，氧化錫之混合 量，以Sn/(Sn+In)之原子比在1 · 9〜14% 爲宜。較宜爲4〜1 1 %。由爲採用本發明之靶材製作 I 丁 0薄膜之際，膜之電阻係數爲最降低的組成所致。 又，氧化鎂之混合量，以Mg / ( I n + Sn+Mg )之原子比在2 · 0〜20 . 0%爲宜 >，較宜爲2 · 0〜 1 0 · 0%，更宜爲2 · 0〜5 . 0%，尤宜爲2 · 0〜 3 · 0%。氧化鎂之添加量若較前述範圍少時，本發明之 效果薄弱，所得的薄膜表示領域構造之同時，膜之耐候性 降低，又，若超過前述範圍時，電阻係數變成過高，故並 不合適。粉末之混合，係以球磨機等進行乾式混合或濕式 混合即可。 -線. 其次，採用所得的混合粉末製作含有氧化鎂之I Τ〇 燒結體。至於燒結體之製作方法並未予特別限定，惟例如 可以下述方法製造。 經濟部智慧財產局員工消費合作社.印製 於前述製得的氧化銦及氧化錫與氧化鎂之混合粉末內 加入黏結劑等，利用模壓法或模鑄法等成形方法成形以製 作成形體。於利用模鑄法製造成形體之情形，將固熔體粉 末塡充於指定的模型後，採用粉末模壓機在1 0 0〜 3〇0 k g / c m 2之壓力下進行模壓。對粉末之成形性惡 劣的情形，因應必要時亦可添加石蠟或聚乙烯醇等黏結劑 本紙張尺度適用中國國家標準（CNS)A4規格（210 X 297公釐） · 9 · 9 9 90 經濟部智慧財產局員工消費合作社印製 A7 __B7_五、發明說明（7 ) 於利用模鑄法製造成形體之情形，於I T〇混合粉末 內添加黏結劑、分散劑、離子交換水，藉由利用球磨機等 混合可製作模鑄成形體用淤漿。其次，採用所得的淤漿進 行模鑄。於鑄模內注入淤漿之前，進行淤漿之脫泡較宜。 脫泡係例如於淤漿內添加聚伸烷基二醇系之脫泡劑並在真 空中進行脫泡處理即可。接著，進行模鑄成形體之乾燥處 理。 其次，於所得的成形體內因應必要”進行冷間靜水壓 模壓（C I P )等壓實化處理。此時c I P壓力爲得足夠 的壓實效果，以2 t on/cm2以上，宜爲2〜5 t on / c m 2爲宜。利用模鑄法進行在此開始的成形之情形，以 去除C I P後之成形體中殘存的水分及黏結劑等有機物之 目的施以脫黏結劑處理亦可。又，即使利用模壓法進行開 始的成形之情形，於成形時已使用黏結劑時，以進行同樣 的脫黏結劑處理較佳。 將如此而得的成形體投入燒結爐內並進行燒結。至於 燒結方法，不論何種方法均可適應，惟若考慮生產設備之 成本等時，以在大氣中燒結爲佳。然而當然亦可採用此外 .的熱模壓（Η P )法，熱間靜水壓模壓（Η I P )法及氧 氣加壓燒結法等向來習知的其他燒結法。又對燒結條件亦 可適當選擇，惟爲得足夠的密度上升效果，又爲抑制氧化 銦之蒸發，燒結溫度以在1 4 5 0〜1 6 5 0 °C爲宜。又 至於燒結時之氣圍以大氣或純氧氣圍氣爲宜。又對燒結時 間爲獲得足夠的密度上升效果，亦以5小時以上，宜爲5 請 先 閱 讀 背 面 之 注 意 事 項 再 f 裝 訂 ▲ 本紙張尺度適用中國國家標準（CNS)A4規格（210 X 297公釐） -10- 590995 A7 B7 五、發明說明（8) 〜3 0小時爲佳。如此可製作出本發明申請專利範圍第1 項之發明的含鎂之I TO燒結體。 其次，藉由將所得的燒結體加工成所期待的形狀，可 製作出本發明申請專利範圍第2項之發明之含鎂之I T〇 蒸鍍材。已，因應需要時，於由無氧銅之熱圈板（packing plate )採用銦軟銲等接合已予以加工成所期待形狀之含鎂 之I T〇燒結體，製作出本發明申請專利範圍第3項之發 明之含鎂之I T〇濺鍍靶材。 ‘· 採用所得的蒸鍍材料或濺鍍靶材，於玻璃基板或薄膜 基板上等的基板上可得本發明申請專利範圍第4項之發明 之透明導電性膜之含鎂之I T 0薄膜。製膜手段並未予特 別限定，可舉出有：d c濺鍍法、r f濺鍍法，於d c上 使r f重疊的濺鍍法、或真空蒸鍍法（離子電鍍）等。 依本發明之第一功效的不具有領域構造之平坦，且蝕 刻特性優越的薄膜。對介由濺鍍法或離子電鍍法等的電漿 之成膜方法尤其有效。又第二效果之電阻係數之安定化， 係即使在不論何種方法成膜的情形亦有效的。 又，以氧化銦、氧化錫、氧化鎂之三種類，或前述三 種之內的二種混合氧化物與殘餘的氧化物之二種類經予準 備的蒸鍍材料或濺鍍靶材，利用共蒸鍍或多元同時濺鍍製 膜亦可。再者，將各個蒸鍍源或濺鍍靶材之部分或全部取 代成金屬或合金使用亦可。 經予形成於S板上的製膜，固應需要時經予蝕刻成所 期待的圖形後，可構成本發明申請專利範圍第5項發明之 本紙張尺度適用中國國家標準（CNS)A4規格（210 X 297公釐） -1 ] _ illljllljll — ι— · I I * W (請先閱讀背面之注意事項再本頁) ΊΤ 訂. -線· 經濟部智慧財產局員工消費合作社印製 經濟部智慧財產局員工消費合作社印制π 590995 A7 B7 五、發明說明（9) 例如平面嵌板顯示器、觸板、太陽電池用窗材、抗靜電膜 、防止電磁波膜、防曇膜、傳感器等機器。 又，如上述般，本發明之薄膜，若考慮使用於需對平 面嵌板顯示器或觸板等進行微細加工之裝置時，則其膜厚 以設成5 Ο Ο 0A以下爲宜。膜厚若超過5 0 0 0人時， 不僅膜之透明性會喪失，與在微細加工之際所被要求的線 及空間（lme and space，線距）與膜厚之値接近，微細加 工乃成爲困難所致。較宜的膜厚之範圍>，係依所使用的顯 示器不同而異，電阻膜式之觸板用途，以8 0〜5 Ο 0A 爲宜，如S TN方式之液晶顯示器般具有矩陣型之電極構 造的顯示器之情形，以設成2 0 0 0〜3 5 0 0人爲宜。 實施例 以下，以實施例再詳細說明本發明，惟本發明並非受 此等所限定者。 實施例1 將氧化銦粉末4 5 0 g、氧化錫粉末5 0 g及氧化鎂 粉末7 · 2 g移入聚乙烯製甕內，利用乾式球磨機混合 7 2小時，以製作混合粉末。 將此粉末放入模具有，在3 〇 〇 k g/c m2之壓力模 壓成成形體。在3 t ◦ n / c m 2之壓力對此成形體進行利 用C I P之緻密化處理。其次在純氧氣圍燒結爐內設置此 成形體’以下述條件燒結。 本紙張尺度適用中國國家標準（CNS)A4規格（21〇 χ 297公釐） -12- -裝------Ί-I訂·τ (請先閱讀背面之注意事項再Β本頁) --線· 590995 Α7 ______ Β7 五、發明說明（1G) (燒結條件） 燒結溫度：1 5 0 〇 °C、升溫速度：2 5。(： / h r、 燒結時間：6小時、氧氣壓力：5 〇 m m Η 2〇（表壓）、 氧氣線速：2 · 7 c m /分鐘 利用阿基米得法測定所得的燒結體之密度時，爲 7 ·〇〇g/cm3 (相對密度：99 · 2%)。採用 E P A M ( Electron Prove Micro Analysis )進行此燒結體 之組成分析。結果示於表1。 〜 利用濕式加工法將此燒結體加工成直徑4英吋厚度6 m m之燒結體，採用銦軟銲結合至氧銅製之墊圈板上作成 革巴材。 在以下的濺鍍條件濺鍍此靶材以進行薄膜之評估。 (濺鍍條件） 基板：玻璃基板、D C電功：2 0 0 W、氣壓： 5 .〇m Τ ο 〇 r、氬氣流量：5 0 S C C Μ、〇2氣流量 :〇· 1SCCM、基板溫度：200°C、膜厚： 3〇〇〇人。 所得的膜之電阻係數爲7 9 0 # Ω · c m，於5 5 0 n m之透過率爲8 6 · 2%。且’透過率係以空氣爲參考 ，測定成滲入玻璃基板之透過率。玻璃基板係使用Corning 公司製造#7059。 其次，採用A F Μ觀察所得的薄膜之表面。結果示於 第3圖之照片。未被觀察有領域構造。 本紙張尺度適用中國國家標準（CNS)A4規格（210 χ 297公爱^ -13 · ---- -- ---·-------- 巋 - (請先閱讀背面之注意事項再ί本頁) I訂·τ -線· 經濟部智慧財產局員工消費合作社印製 590995 A7 B7 五、發明說明（11 ) 其次’採用E PMA檢查膜之組成。結果示於表2 實施例2 將氧化銦粉末4 5 0 g、氧化錫粉末50 g及氧化鎂 粉末1 5 g移入聚乙烯製甕內，利用乾式球磨機混合7 2 小時，以製作混合粉末。 將此粉末放入模具有內，在3 0 0 k g/cm 2之壓力 模壓成成形體。在3 t ο n / c m 2之壓力對此成形體進行 利用C I P之緻密化處理。其次在純氧氣圍氣燒結爐內設 置此成形體，以與實施例1相同條件燒結。 利用阿基米得法測定所得的氧化錫粉之密度時，爲 6·86g/cm3(相對密度：98·6%)。採用 Ε Ρ Μ A進行此燒結體之組成分析。結果示於表丄。 利用濕式加工法將此燒結體加工成直徑4英吋厚度6 m m之燒結體，利用銦軟銲結合至無氧銅製之墊圈板上作 成靶材。 在以下的濺鍍條件濺鍍此靶材以進行薄膜之評估。 (濺鍍條件） 基板：玻璃基板、D C電功：2 0 0 W、氣壓： 5 · 0 m Τ ο 〇 r、氬氣流量：5 0 S C C Μ、〇2氣流量 :〇.1SCCM、基板溫度：200°C、膜厚： 3 Ο Ο Ο A。 所得的膜之電阻係數爲1 8 0 0 0 // Ω · c m，於 ----J.---·-----裝--- * - (請先閱讀背面之注意事項再B本頁) 丨訂· 線· 經濟部智慧財產局員工消費合作社印製 本紙張尺度適用中國國家標準（CNS)A4規格（210 X 297公釐） -14- 590995 A7 ------- B7 五、發明說明（12) 550nm之透過率爲85·9%。且，透過率之測定條 件係與實施例1相同條件。 其次，採用A FM觀察所得的薄膜之表面。結果示於 第4圖之照片。未被觀察有領域構造。 其次’採用E PMA檢查膜之組成。結果示於表2。 實施例3 將氧化銦粉末4 5 0 g、氧化錫粉未5 0 g及氧化鎂 粉末3 4 g移入聚乙烯製甕內，利用乾式球磨機混合7 2 小時，以製作混合粉末。 將此粉末放入模具有內，在3 〇 〇 k g/c m2之壓力 模壓成成形體。在3 t ο η / c m 2之壓力對此成形體進行 利用C I P之緻密化處理。其次在純氧氣圍氣燒結爐內設 置此成形體’以與實施例1相同條件燒結。 利用阿基米得法測定所得的燒結體之密度時，爲 6 · 6 5 g / c m 3 (相對密度：9 8 · 7 % )。採用 Ε Ρ Μ A進行此燒結體之組成分析。結果示於表1。 利用濕式加工法將此燒結體加工成直徑4英吋厚度6 m m之燒結體，利用銦軟銲結合至無氧銅製之墊圈板上作 成靶材。 在以下的濺鍍條件濺鍍此靶材以進行薄膜之評估。 (濺鍍條件） 基板：玻璃基板、D C電功：2 0 0 W、氣壓： · --------- - - (請先閱讀背面之注意事項再本頁) Γ 經濟部智慧財產局員工消費合作社却製 本紙張尺度適用中國國家標準（CNS)A4規格（210 χ 297公釐） -15 - 590995 A7 _____ B7 經濟部智慧財產局員工消費合作社印製 五、發明說明（13) 5 · OmToor、氬氣流量：50SCCM、〇2氣流量 :0 · 1SCCM、基板溫度：200°C、膜厚： 3 0 〇 〇 A。 所得的膜之電阻係數爲3 5 0 〇 〇 · cm，於 55〇nm之透過率爲85 · 9%。且，透過率之測定條 件係與實施例1相同條件。 其次’採用A FM觀察所得的薄膜之表面。結果示於 第5圖之照片。未被觀察有領域構造。> 其次，採用Ε Ρ Μ A檢查膜之組成。結果示於表2。 比較例1 將氧化銦粉末4 5 0 g、氧化錫粉末5 0 g移入聚乙 烯製甕內，利用乾式球磨機混合7 2小時，以製作混合粉 末。 將此粉末放入模具有內，在3 〇 〇 k g/c m 2之壓力 模壓成成形體。在3 t ο η / c m 2之壓力對此成形體進行 利用C I P之緻密化處理。其次在純氧氣圍氣燒結爐內設 置此成形體’以與實施例1相同條件燒結。 利用阿基米得法測定所得的燒結體之密度時，爲 7·12g/cm3(相對密度：99·4%)。採用 Ε Ρ Μ A進fj此燒結體之組成分析。結果示於表1。 利用濕式加工法將此燒結體加工成直徑4英吋厚度6 m m之燒結體，利用銦乾銲結合至無氧銅製之墊圈板上作 成靶材。 (請先閱讀背面之注意事項再Β本頁) 裝 ϋ W1J ϋ 線. 本纸張尺度適用中國國家標準（CNS)A4規格（210 X 297公釐） -16- 590995 A7 _ B7 五、發明說明（14) 在以下的濺鍍條件濺鍍此靶材以進行薄膜之評估。 (濺鍍條件） 基板：玻璃基板、DC電功：200W、氣壓： 5 · OmToor、氬氣流量：50SCCM、〇2氣流量 :〇· 1SCCM、基板溫度：200°C、膜厚： 3 0 0 0 A。 所得的膜之電阻係數爲2 0 〇 // Ω，,· c m，於5 5 0 n m之透過率爲8 6 · 7 %。且，透過率之測定條件係與 實施例1相同條件。 其次’採用A F Μ觀察所得的薄膜之表面。結果示於 第6圖之照片。被觀察有領域構造。 其次’採用Ε Ρ Μ Α檢查膜之組成。結果示於表2。 實施例4 將氧化銦粉末4 5 0 g、氧化錫粉末50 g及氧化鎂 粉末3 · 6 g移入聚乙烯製甕內，利用乾式球磨機混合7 2小日寸，以製作混合粉末。將此粉末放入模具有內，在 3 0 0 k g/cm2之壓力模壓成成形體。在3 t on/ c m 2之壓力對此成形體進行利用C丨ρ之緻密化處理。其 次在純氧氣圍氣燒結爐內設置此成形體，以與竇施例1相 问條件燒結。 利用阿基米禧法測定所得的氧化錫粉之密度時，爲 7·09g/cm3(相對密度：99·7%)。採用 本紙張尺度適用中國國家標準（CNS)A4規格（210 X 297公釐） _ I---I I ΙΊ I I I 裝 i I * * (請先閱讀背面之注意事項再本頁) 言- -線- 經濟部智慧財產局員工消費合作社印製 -17- 590995 A7 ___ B7 五、發明說明（15) Ε Ρ Μ A進行此燒結體之組成分析。結果示於表1。 利用濕式加工法將此燒結體加工成直徑4英吋厚度6 m m之燒結體，利用銦乾銲結合至無氧銅製之墊圈板上作 成靶材。 在以下的濺鍍條件濺鍍此靶材以進行薄膜之評估。 (濺鍍條件） 基板：玻璃基板、D C電功：2 0 >0 W、氣壓： 5 · OmToo r、氬氣流量：50SCCM、〇2氣流量 :0 · 1SCCM、基板溫度：300 °C、膜厚：120 入。 其次，採用Ε Ρ Μ A檢查膜之組成。結果示於表1。 對所得的薄膜，以下述條件，實施耐熱試驗，檢查電 阻係數之變化率。且，變化率（％ )，係由（試驗後之電 阻係數一試驗前之電阻係數）X 1 0 0 /試驗前之電阻係 數予以求得。 請 先 閲 讀 背 面 之 注 意 事 項 再 f 裝 -訂 線 經濟部智慧財產局員工消費合作社印製 (耐熱試驗條件） 氧氣圍：大氣中、溫度：100〜250 °C、保持時 間：3 0分鐘 結果示於第7圖，不論於1 0 0〜2 5 0 °C之任一溫 度，電阻係數幾乎不變化。 其之，對同法而得的薄膜，以下述的條件，實施耐濕 試驗，檢查電阻係數之變化率。但，變化率（％ )係由（ 本纸張尺度適用中國國家標準（CNS)A4規格（210 X 297公釐） -18- 590995 A7 B7 五、發明說明（16) 試驗後之電阻係數一試驗前之電阻係數）x 1 〇 〇/試驗 前之電阻係數予以求得。 (耐濕試驗條件） 溫度：6 0 °C、濕度：9 0 % R Η、保持時間： 5 0 0小時 結果示於第8圖。即使經過5 0 0小時，電阻係數亦 幾乎不變化而呈安定。 ‘ 實施例5 採用以與實施例1相同條件製造而得的靶材，以與實 施例4相同濺鍍條件成膜後，以與實施例4相同條件實施 耐熱試驗及耐濕試驗，耐熱試驗之結果示於第7圖。不論 於1 0 0〜2 5 0 t之任何溫度，電阻係數幾乎無變化。 耐濕試驗之結果示於第8圖。即使經過5 0 0小時後 ，電阻係數亦幾乎不變化而呈安定。 比較例2 經濟部智慧財產局員工消費合作社印製 -----J.---------裝--- (請先閱讀背面之注意事項再B本頁) 採用以與申請專利範圍1相同條件製造而得的靶材， 以與實施例4相同濺鍍條件成膜後，以與實施例4相同條 件實施耐熱試驗及耐濕試驗。耐熱試驗之結果示於第7 _ 。利用在1 00〜2 5 0 °C之熱處理的實施，觀察有在 2 0 0 °C增加約5 %，在2 5 0 °C增加約2 4 %。利用在 高溫之熱處理，電阻係數呈大幅增加。 本紙張尺度適用中國國家標準（CNS)A4規格（210 X 297公釐） •19- 590995 A7 ______Β7____ 五、發明說明（17 ) 耐濕試驗之結果示於第8圖，觀察有由經過3 0 0小 時後增加，經過5 0 0小時後增加8 0 %之電阻係數。 比較例3 將氧化銦粉末4 5 0 g、氧化錫粉末5 0 g及氧化鎂 粉末1 · 8 g移入聚乙烯製甕內，利用乾式球磨機混合 7 2小時，以製作混合粉末。 將此粉末放入模具有內，在3 0 0七g / c m 2之壓力 模壓成成形體。在3 t on/cm2之壓力對此成形體進行 利用C I P之緻密化處理。其次在純氧氣圍氣燒結爐內設 置此成形體，以下述條件燒結。 (燒結條件） 燒結溫度：1 5 0 0 t：、升溫速度：2 5 °C / h r、 燒結時間：6小時、氧氣壓力：5 0 m m Η 2〇（表壓）、 氧氣線速：2 · 7 c m /分鐘。 利用阿基米得法測定所得的燒結fp之密度時，爲 7·12g/cm3(相對密度：99·9%)。採用 E P M A ( Electron Prove Micro Analysis )進行此燒結體 之組成分析。結果示於表1。 利用濕式加工法將此燒結體加工成直徑4英吋厚度6 m m之燒結體，利用銦乾銲結合至無氧銅製之墊圈板上作 成靶材。 在以下的濺鍍條件濺鍍此靶材以進行薄膜之評估。 -----：---·-----裝--- (請先閱讀背面之注意事項再|||本頁) 丨方_ 經濟部智慧財產局員工消費合作社印制衣 本紙張尺度適用中國國家標準（CNS)A4規格（210 X 297公釐） -20· 590995 A7 B7 五、發明說明（18) (濺鍍條件） 基板：玻璃基板、D C電功：2 0 0 W、氣壓： 5 · OmToor、氬氣流量：50SCCM、〇2氣流量 :〇· 1SCCM、基板溫度：200°C、膜厚： 3 0 〇 〇 A。 所得的膜之電阻係數爲2 1 0 // Ω · c m，於5 5 0 n m之透過率爲8 6 · 6 %。其次，採用A F Μ觀察所得 的薄膜之表面。結果示於第9圖之照片。未被觀察有領域 構造。 其次，採用Ε Ρ Μ Α檢查膜之組成。結果示於表2。 其次，以與實施例4相同條件實施耐熱試驗及耐濕試 驗。耐熱試驗之結果示於第7圖。利用在2 0 0〜2 5 0 °C之熱處理的實施，觀察在2 0 0 °C增加約2 %，在 2 5 0 t增加約1 0 %之電阻係數。利用在高溫之熱處理 ，大幅的增加電阻係數。 耐熱試驗之結果示於第8圖。觀察有由經過3 0 〇小 時後增加，經過5 0 0小時後增加4 5 %之電阻係數。 實施例6 採用實施例4所得的靶材，於聚碳酸酯基板上製作 I T〇薄膜。 (濺鍍條件） 本紙張尺度適用中國國家標準（CNS)A4規格（210 X 297公釐） · 21 - -----J----.-----裝--- - % (請先閱讀背面之注意事項再β本頁) 訂· 線. 經濟部智慧財產局員工消費合作社印製 590995 A7 B7 經濟部智慧財產局員工消費合作社印製 五、發明說明（19) 基板：聚碳酸酯、DC電功：200W、氣壓： 5 · OmToor、氬氣流量：50SCCM、〇2氣流量 :0 · 25SCCM、基板溫度：70°C、膜厚： 1 2 〇 A。 採用Ε Ρ Μ A進行所得的薄膜之組成分析。結果示於 _ 2。其次，對所得的薄膜以下述的條件，實施耐熱試驗 ’檢查電阻係數之變化率。 • > (耐熱試驗條件） 氧氣圍：大氣中、溫度：8 0 T：、保持時間：9 0分 鐘 電阻係數之變化率爲+15%。 其次，對同法製得的薄膜，以與實施例4相同的條件 ’以實施耐熱試驗，檢查電阻係數之變化率。結果示於第 1 0圖，經過5 0 0小時後，電阻係數亦幾乎不變化而呈 r~j—t r 女疋。 實施例7 採用實施例1製得的靶材，以與實施例6相同的條件 於聚碳酸酯基板上製作I T 0薄膜。 採用Ε Ρ Μ A進行所的薄膜之組成分析。結果示於表 2。 · 其次，對所得的薄膜，以與實施例6相同的條件，實 施耐熱試驗，檢查電阻係數之變化率。電阻係數之變化率 (請先閱讀背面之 注意事項再本頁) 丨裝 i線. 本紙張尺度適用中國國家標準（CNS)A4規格（210 X 297公釐） -22- 9 9 90 A7 ___Β7____ 五、發明說明（2〇) 爲 + 1 1 %。 其次，對同法製得的薄膜，以與實施例6相同的條件 ’實施耐熱試驗，檢查電阻係數之變化率。結果示於第 1〇圖。經過5 0 0小時後，電阻係數亦幾乎不變化而呈 ^•/7 女疋。 比較仞ί 4 採用比較例1製得的靶材，以與實施例6相同的條件 於聚碳酸酯基板上製作I Τ 0薄膜。 採用Ε Ρ Μ Α進行所的薄膜之組成分析。結果示於表 2 ° 其次，對所得的薄膜，以與實施例6相同的條件，實 施耐熱試驗，檢查電阻係數之變化率。電阻係數之變化率 ，係表示出+ 4 5 %之較大的値。 其次，對同法製得的薄膜，以與實施例6相同的條件 ，實施耐熱試驗，檢查電阻係數之變化率。結果示於第 1〇圖。經過3 0 0小時增加’經過5 0 0小時後被觀察 電阻係數增至1 〇 〇 %。 實施例8 將氧化銦粉末4 5 0 g、氧化錫粉末5 0 g及氧化鎂 粉末3 · 6 g移入聚乙烯製甕內，利用乾式球磨機混合 7 2小時，以製怍混合粉末。將此粉末適量放入模具有內 ’在300kg/cm2之壓力模壓成成形體。在3 t 〇n 本紙張尺度適用中國國家標準（CNS)A4規格（21G χ 297公爱)Γ^Γ ------- ------Τ---·-----裝--- ·-- (請先閱讀背面之注意事項再本頁) 丨訂·1 .線. 經濟部智慧財產局員工消費合作社印製 590995 A7 ________ B7 經濟部智慧財產局員工消費合作社印製 五、發明說明（21) / C m 2之壓力對此成形體進行利用C丨p之緻密化處理。 其所得的成形體之大小爲23mmx16mmt ，內形狀 測定所的的成形體之密度時，爲4 · 0 g / c m 3 (相對密 度 5 6 · 3 % )。 其次’採用E ? Μ A進行此成形體之組成分析結果示 於表1。 以此成形體爲蒸鍍材料，在下述的條件以真空蒸鍍法 成膜並進行薄膜之評估。 > (真空蒸鍍條件） 基板：玻璃基板、膜厚：120人、氧氣分壓：2x 1 〇 1 t 〇 r r 其次，採用Ε Ρ Μ A檢查膜之組成。結果示於表2。 對所得的薄膜，以與實施例4相同的條件，實施耐熱 試驗。檢查電阻係數之變化率。結果示於第1 1圖。即使 於1 0 0〜2 5 0 °C之任何溫度，電阻係數亦幾乎無變化 其次，對同法製得的薄膜，以與實施例4相同的條件 ，實施耐熱試驗，檢查電阻係數之變化率。結果示於第 1 2圖。經過5 0 0小時後，電阻係數亦幾乎無變化而呈 安定。 眚施例9 將氧化銦粉末4 5 0 g、氧化錫粉末5 0 g及氧化鎂 本紙張尺度適用中國國家標準（CNS)A4規格（210 X 297公釐） -24- 請 先閱. 讀 背 面 之 注 意 事 項 再 f 裝 訂 ▲ 590995 經濟部智慧財產局員工消費合作社印製 A7 B7 五、發明說明（22) 粉末7 · 2 g移入聚乙烯製甕內，利用乾式球磨機混合 7 2小時，以製作混合粉末。將此粉末適量放入模具有內 ’在300kg/cm2之壓力模壓成成形體。在3 t on / c m 2之壓力對此成形體進行利用C I P之緻密化處理。 所得的成形體之大小爲2 3 m m X 1 6 m m t 。由形狀測 定所得的成形體之密度時，爲3 · 9 g / c m 3 (相對密度 :5 5 · 2 % )。 其次，採用Ε Ρ Μ A進行此成形體之組成分析。結果 示於表1。 以此成形體爲蒸鍍材料，在與實施例8相同的條件以 真空蒸鍍法成膜並進行薄膜之評估。 其次採用Ε Ρ Μ A檢查膜之組成。結果示於表2。 對所得的薄膜，以與實施例4相同的條件，實施耐熱 試驗。檢查電阻係數之變化率。結果示於第丨1圖。即使 方< 1 0 0〜2 5 0 C之任何溫度’電阻係數亦幾乎無變化 其次，對同法製得的薄膜，以與實施例4相同的條件 ’實施耐熱試驗，檢查電阻係數之變化率。結果示於第 1 2圖。經過5 0 0小時後’電阻係數亦幾乎無變化而呈 安定。 比較例5 將氧化銦粉末4 5 0 g及氧化錫粉末5 0 g移入聚乙 -----T---,-----裝—— * - (請先閱讀背面之注意事項再β本頁) 訂： 本紙張尺度適用中國國家標準（CNS)A4規格（210 X 297公釐） 25 590995 A7 B7 經濟部智慧財產局員工消費合作社印製 五、發明說明（23) 烯製甕內，利用乾式球磨機混合7 2小時，以製作混合粉 末。將此粉末適量放入模具有內，在3 0 0 k g / c m 2之 壓力模壓成成形體。在3 t ο n/cm2之壓力對此成形體 進行利用C I P之緻密化處理。所得的成形體之大小爲 23mmxl6mmt。由形狀測定所得的成形體之密度 時，爲4 · lg/cm3 (相對密度：57 . 3%)。 其次’採用Ε Ρ Μ A進行此成形體之組成分析。結果 示於表1。 > 以此成形體爲蒸鍍材料，在與實施例8相同的條件下 以真空蒸鍍法成膜並進行薄膜之評估。 其次採用Ε Ρ Μ A檢查膜之組成。結果示於表2。 耐熱試驗之結果示於第1 1圖。藉由在2 〇 〇〜 2 5 0 °C之熱處理的實施，觀察有在2 0 0 t增加約7 % ’在2 5 0 °C約3 0 %之電阻係數。利用在高溫之熱處理 ，·電阻係數會大幅增加。 耐熱試驗之結果示於第1 2圖。觀察有經過3 0 0小 時後增加’經過5 0 0小時後亦增加9 0 %之電阻係數。 實施例1 0 採用實施例1所得的靶材，於玻璃基板上以與實施例 1相同的條件製作I TO薄膜成厚度5 0 0 0人之薄膜。 測定所得的薄膜之透過率。測定波長爲4 0〇、 5 〇 0、550、 600、 700、 8〇0nm，以相同 玻璃基板爲參考，作爲僅膜之透過率並予測定。 - — — — 111 — ——— — — — — —— (請先閱讀背面之注意事項再®Γ本頁) _Ί*I訂· i線· 本纸張尺度適用中國國家標準（CNS)A4規格（210 X 297公爱） -26- 590995 A7 B7 五、發明說明（24) 結果示於表3。經過全波長可得8 0%以上之透過率 經濟部智慧財產局員工消費合作社印製 表1 燒結體之組成分析結果 In S η Mg 〇 Mg/(In + Sn + Mg) atm.% % 實施例1 34.8 3.4 1.9 59.9 4.7 實施例2 33.4 3.3 3.8 5 9.5 9.4 實施例3 30.5 3.0 7.8 58.7 18.9 實施例4 35.4 3.5 1.0 60.1 2.4 實施例8 34.9 3.6 1.0 60.5 2.5 實施例9 34.3 3.5 1.9 60.3 4.8 比較例1 36.2 3.5 一 60.3 0 比較例3 35.8 3.5 0.49 60.2 1.2 比較例5 35.6 3.7 — 60.7 0 -----J.---〆-----裝--- ··· (請先閱讀背面之注意事項再Φ本頁) 訂· •線. 本紙張尺度適用中國國家標準（CNS)A4規格（210 χ 297公釐） -2Ί - 590995 A7 B7 五、發明説明（） 25 表2 薄月 莫之組成分析結果 In Sn Mg 〇 Mg/(In + Sn + Mg) atm.% % 實施例1 35.1 2.8 1.9 60.2 4.8 實施例2 33.7 2.7 3.8 59.8 9.4 實施例3 30.8 2.4 7.8 59.0 19.1 實施例4 35.7 2.9 1.0 60.4 2.4 實施例6 35.5 3.0 1.0 60.5 ν 2.5 實施例7 34.9 2.9 1.9 60.3 4.8 實施例8 35.0 3.6 1.0 60.4 2.5 實施例9 34.4 3.5 1.9 60.2 4.8 比較例1 36.5 3.0 一 60.6 0.0 比較例3 36.1 2.9 0.49 60.5 1.2 比較例4 36.0 3.6 一 60.4 0 比較例5 35.7 3.7 — 60.6 0 (請先閲讀背面之注意事項再填办 裝.590995 A7 — B7 V. Description of the invention (1) Mandibular jaw region to which Mann belongs The present invention relates to a conductive metal oxide sintered body, a target, a thin film, and uses thereof. The conventional technology IT0 (Indium Tin Oxide) thin film has the characteristics of high conductivity and high permeability, and it can also be easily micro-processed. Therefore, it can be used for display electrodes for flat panel displays>, Resistive film type touch panel, solar cell window material, antistatic film, anti-electromagnetic film, anti-rust film, sensor, etc. Such a method for manufacturing the I T 0 thin film can be roughly classified into chemical film forming methods such as spray thermal decomposition method, CVD method, and chemical film forming methods such as beam evaporation method, ion plating method, and sputtering method. Among these, a physical film formation method is also used. Since a film can be easily formed to a large area and a high-performance film can be obtained, it can be used in various fields. In the case of manufacturing IT thin film by physical film formation method, as for the raw materials used (sputter target in the case of sputtering method, evaporation material in the case of vacuum evaporation method and ion plating), metal indium and tin can be used The resulting alloy or a composite oxide of indium oxide and tin oxide. Among them, the method using the IT0 composite oxide, compared with the method using the I τ alloy, the obtained film has small changes in resistance 値 and transmittance over time, and can be easily controlled into film strips, so it has become the mainstream of the IT0 thin film manufacturing method. . With the development of the information society in recent years, the required technical level of the aforementioned flat panel display or touch panel is increasing day by day. Therefore, even if the characteristics of the IT 0 film have not been a problem since the foregoing, it is said to be a problem. Please read the precautions on the back first. «This page is bound. Standard (CNS) A4 specification (210 X 297 mm) -4- 995 995 A7 B7 5. Description of the invention (2). Specifically, there are problems with the film structure and durability of the I TO film. First, the problems in the structure of the membrane will be explained. When the I T 0 thin film is formed at room temperature, an amorphous film can be obtained except for special conditions. However, when considering thermal resistance stability or heat resistance, it is preferable to crystallize the thin film. The crystallization temperature of I TO is 14 0 t. To obtain a crystallized film, it is necessary to form a film at a film formation temperature higher than this temperature. However, when a crystalline I TO thin film is formed by a plasma film formation step using a plasma method such as sputtering or ion plating, a characteristic domain structure is formed on the I TO thin film. The structure of the field is properly aligned with the crystal grains with a crystal orientation of about 10 to 30 nm as shown in Fig. 1 to form a crystal grain field with a size of 200 to 300 nm. The structure in this field is a collection of small crystal grains (grams) with different crystal orientations, which are mainly oriented into (111), (110) or (100). In addition, the orientation surface has different characteristics of resistance to plasma damage. Therefore, during the film formation, the sputtering speed of the pre-formed film is different when the plasma is further sputtered. As a result, as shown in FIG. 2, a thin film having a thickness on the (100) plane and an unevenness on a thin surface on the (100) plane is formed. Films of this structure were discovered by sputtering or ion plating. On the other hand, thin film displays where I τ〇 thin films are more commonly used, especially in the field of liquid crystal displays, the size and miniaturization of screens are progressing rapidly. Therefore, the requirements for a transparent conductive film are required to have a large area, a low resistance, and a film that can be easily microfabricated. Please read the notes on the back before K. This page is bound to be printed by the Intellectual Property Bureau of the Ministry of Economic Affairs's Consumer Cooperatives. This paper is printed in accordance with China National Standard (CNS) A4 (210 x 297 public love) -5- 590995 A7 ____ B7 V. Description of the invention (3) However, if a sputtering method capable of uniformly forming a large area is used, when the film is formed at a high substrate temperature, the film having the aforementioned unevenness on the surface will form a film that is prone to etch residue. That is, a problem arises in that an inappropriate film is formed on the microfabrication. Next, the problem of durability will be explained. I TO film has the problem of increasing the resistivity of the film under high temperature or high humidity environment. For example, regarding heat resistance, it is known that the resistivity will increase by 5 to 30% when the temperature is set to 30 minutes at a temperature of 200 t or more in the atmosphere. With regard to humidity resistance, by placing it at 60 t: 90% R Η for 500 hours, it is known that the resistivity will increase by 10 ~ 2 0%. The aforementioned increase in resistivity is more significant as the thickness of the I TO film becomes thinner. Therefore, the field of touch panels using a resistive film method using a thin film thickness of I TO film is particularly pointed out as a problem, and it has become an important issue to be solved. In order to reduce the discharge stability, in order to reduce the amount of nodules (black foreign matter formed on the target surface during continuous sputtering of IT in a mixed gas range of argon and oxygen), there are Research into increasing the sintered density of IT 0 sintered bodies has prevailed. For example, the Japanese special fair No. 5-3 0 9 0 5 is a method of sintering in a pressurized oxygen atmosphere above a pressure of one atmosphere, as in Japanese Unexamined Patent Publication No. 4 1 16 0 0 4 7 under the oxygen atmosphere 1 3 Indium oxide powder and tin oxide powder with an average particle size of 0. 1 # ni or less are heat-treated at a temperature of 50 ° C or higher, and the obtained heat-treated powder is re-pulverized at a temperature of 500-1000 ° C or higher and A method of sintering in an oxygen-free atmosphere under a pressure of more than 100 kg / cm 2, such as i IIIJ I-- · 1 III · i I Qin. (Please read the precautions on the back before e this page) "I order: • Line-The printed paper size of the printed consumer clothing cooperatives of the Intellectual Property Bureau of the Ministry of Economic Affairs applies the Chinese National Standard (CNS) A4 specification (210 X 297 mm) -6-590995 A7 ___ B7 V. Description of the invention (4) USP — 5 4 3 3 9 0 Addition of sintering aid A 1 2 0 3, 2 0 3 or 1 ^ 1 in the instruction manual No. 1 · 05 ~ 0 · 25% by weight Sintering method, etc. However, these inventions still fail to solve the above-mentioned problems related to the flatness and durability of the film. Problems to be Solved by the Invention The subject 'is used for forming transparent electrodes of flat panel displays at substrate temperatures above the crystallization temperature > I τ ◦ Case of thin films' to provide flat, excellent etching characteristics without a field structure. In the case of a thin film with a thin film thickness, a transparent conductive film having excellent heat resistance and moisture resistance and a small change rate of resistivity is provided. Furthermore, a vapor deposition material used in forming such a film, Targets for sputtering. The methods adopted by the present inventors carefully reviewed the conductive metal oxides doped with dissimilar elements in IT, and found that they were printed by the Consumer Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs with magnesium as the doping agent. : -------------- Install ------ IT Order _ «| 九 ί (Please read the precautions on the back first and then β page) IT〇 film for miscellaneous agents, can Solve the above-mentioned problems and complete the present invention. That is, the present invention is related to ① which is substantially made of indium, tin, magnesium, and oxygen, and contains magnesium in an atomic ratio of Mg / (I n + Sn + Mg) of 2 _ A metal oxide sintered body characterized by a ratio of 0 to 2 0 · 〇%, ② using a vapor deposition material of the sintered body, ③ using a sputtering target of the sintered body, ④ substantially consisting of indium, tin, magnesium and oxygen Made of magnesium containing Mg / (This paper size applies Chinese National Standard (CNS) A4 specifications (210x 297 mm) 9 9 90 Printed by the Consumers ’Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs A7 ________B7______ V. Description of the invention (5) (I n + Sn + Mg) is a transparent conductive film characterized by an atomic ratio of 2 · 0 to 20 · 0%, and ⑤ contains the transparent A machine made of a conductive film. Hereinafter, the present invention will be described in detail. A sintered body according to the present invention, a sputtering target, a vapor deposition material, a thin film made of the sintered body, and a machine system containing the thin film It is manufactured by the following method. As for the method for preparing the IT0 sintered body containing magnesium, it is not particularly limited, but as for the sintered body for sputtering target, the density of the obtained sintered body is preferably 98% or more. Such a sintered body can be produced, for example, by the following method. The relative density (D) of the present invention represents the relative density of the theoretical density (d) obtained by averaging the true densities of η 2 0 a, Sn0 2 & Mg0. The theoretical density (d) obtained from the addition average is based on the composition of the leather material. The mixing amounts (g) of I η 2 03, S η 02, and M g〇 powders are each set to a, b, and c. When using the true density of 7.179, 6. 9 5. 3. 65, (g / cm3), by d = (a + b + c) ((a / 7. 179) + (b / 6 · 9 5) + (c / 3 · 6 5)). Therefore, if the measured density of the sintered body is set to d 1, the relative density D (%) is obtained by the formula: D2 (dl / d) X100. First, powder mixing is performed. It is also possible to mix indium oxide powder and tin oxide powder and magnesium oxide powder, and it is also possible to mix tin oxide solid indium oxide powder and magnesium oxide powder. At this time, if the average particle size of the powder used is large, the paper size applies the Chinese National Standard (CNS) A4 (210 X 297 mm) -8-(Please read the precautions on the back before this page) Xiang 7 Order-. Line · 590995 A7 ___ B7 V. Description of the invention (6) ----- J --- · ----- packing --- * I (Please read the precautions on the back before this page) The density is not sufficiently increased, and it is difficult to form a sintered body with a relative density of 99% or more. Therefore, the average particle diameter of the powder used is preferably 1 · 5 // m or less. More preferably, it is 0 · 1 to 1 · 5em. Here, the mixed amount of tin oxide is preferably in the range of 1.9 to 14% of the atomic ratio of Sn / (Sn + In). It is preferably 4 to 11%. This is due to the composition having the lowest resistivity of the film when the I but 0 film is produced using the target of the present invention. In addition, the mixed amount of magnesium oxide is Mg / (In + Sn + Mg) in an atomic ratio of 2 · 0 ~ 20. 0% is preferred >, more preferably 2 · 0 ~ 1 0 · 0%, more preferably 2 · 0 ~ 5. 0%, especially 2 · 0 ~ 3 · 0%. If the added amount of magnesium oxide is less than the foregoing range, the effect of the present invention is weak. The obtained thin film indicates the structure of the field, and the weather resistance of the film is reduced. When it exceeds the foregoing range, the resistivity becomes too high, so it is not Suitable. The powder can be mixed by dry or wet mixing using a ball mill or the like. -line. Next, an I TO sintered body containing magnesium oxide was produced using the obtained mixed powder. The method for producing the sintered body is not particularly limited, but it can be produced, for example, by the following method. Consumer Cooperatives of the Intellectual Property Bureau of the Ministry of Economic Affairs. A binder is added to the indium oxide and the mixed powder of tin oxide and magnesium oxide prepared as described above, and it is molded by a molding method such as a compression molding method or a molding method to form a molded body. In the case where a molded body is manufactured by a die casting method, a solid mold powder is filled into a designated mold, and then a powder press is used for molding under a pressure of 100 to 300 k g / cm 2. If the formability of the powder is bad, adhesives such as paraffin or polyvinyl alcohol can be added as necessary. The paper size is applicable to China National Standard (CNS) A4 (210 X 297 mm). · 9 · 9 9 90 Ministry of Economic Affairs Printed by the Intellectual Property Bureau employee consumer cooperative A7 __B7_ V. Description of the invention (7) In the case of using the die-casting method to form a molded body, a binder, a dispersant, and ion-exchanged water are added to the IT0 mixed powder, and a ball mill is used Such mixing can produce a slurry for a molded body. Next, the obtained slurry was used for die casting. Before the slurry is injected into the mold, it is better to degas the slurry. For the defoaming system, a polyalkylene glycol-based defoaming agent may be added to the slurry, and the defoaming treatment may be performed in the air. Next, the molded body is dried. Secondly, if necessary, compaction treatment such as cold hydrostatic pressing (CIP) is performed in the obtained compact. At this time, the pressure of c IP is sufficient to achieve a compaction effect of 2 ton / cm2 or more, preferably 2 ~ 5 t on / cm 2 is preferable. In the case where the molding is performed by the die casting method, a debinder treatment may be applied to remove the remaining water and organic substances such as the binder in the formed body after the CIP. In addition, even when the initial molding is performed by the compression molding method, it is preferable to perform the same debonding treatment when a binder is already used during the molding. The molded body thus obtained is put into a sintering furnace and sintered. Any method can be adapted, but if the cost of production equipment is considered, it is better to sinter in the atmosphere. However, of course, other methods can also be used. Other conventional sintering methods such as the hot stamping (Η P) method, the hydrostatic hydrostatic pressing (模 I P) method, and the oxygen pressure sintering method. The sintering conditions can also be appropriately selected, but in order to obtain a sufficient density increase effect and to suppress the evaporation of indium oxide, the sintering temperature is preferably 1 450 to 1650 ° C. As for the sintering, it is appropriate to surround the atmosphere with pure oxygen. For the sintering time, in order to obtain a sufficient density increase effect, it is more than 5 hours, it should be 5. Please read the precautions on the back before f binding. ▲ This paper size applies the Chinese National Standard (CNS) A4 specification (210 X 297 mm). ) -10- 590995 A7 B7 V. Description of the invention (8) ~ 30 hours is better. In this way, a magnesium-containing I TO sintered body according to the invention claimed in claim 1 of the present invention can be produced. Next, by processing the obtained sintered body into a desired shape, it is possible to produce a magnesium-containing I T0 vapor-deposited material according to the second aspect of the present invention. If necessary, a magnesium-containing IT0 sintered body which has been processed into a desired shape is bonded to a packing plate of oxygen-free copper by indium soldering or the like to produce the third scope of the scope of patent application for the present invention. The invention is an IT0 sputtering target containing magnesium. ‘· Using the obtained vapor deposition material or sputtering target, a substrate including a glass substrate or a thin film substrate, etc., may obtain a magnesium-containing I T 0 thin film of the transparent conductive film of the invention as claimed in claim 4 of the present invention. The film forming method is not particularly limited, and examples thereof include a d c sputtering method, an r f sputtering method, a sputtering method in which r f is superimposed on d c, or a vacuum evaporation method (ion plating). A thin film having no field structure and excellent etching characteristics according to the first effect of the present invention. It is particularly effective for a plasma film formation method such as a sputtering method or an ion plating method. Moreover, the stabilization of the resistivity of the second effect is effective even in the case of forming a film by any method. In addition, three types of indium oxide, tin oxide, and magnesium oxide, or two types of mixed oxides and residual oxides among the three types are prepared as a vapor deposition material or a sputtering target, and co-evaporation is used. It is also possible to form a film by plating or multiple simultaneous sputtering. Furthermore, a part or all of each evaporation source or sputtering target may be used instead of a metal or an alloy. After the film formed on the S-plate is etched into a desired pattern when necessary, the paper size of the fifth invention of the patent scope of the present invention can be applied to the Chinese paper standard (CNS) A4 specification ( 210 X 297 mm) -1] _ illljllljll — ι— · II * W (Please read the notes on the back before this page)) Τ Order. -Line · Printed by the Consumer Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs Printed by the Consumer Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs 590 995995 A7 B7 V. Description of the invention (9) For example, flat panel display, touch panel, solar cell window materials, anti- Electrostatic film, anti-electromagnetic wave film, anti-rust film, sensor and other equipment. In addition, as described above, when the film of the present invention is considered to be used in a device that requires microfabrication of a flat panel display, a touch panel, etc., its film thickness is preferably set to 5 0 0 0A or less. If the film thickness exceeds 5,000 people, not only the transparency of the film will be lost, but the line and space (line distance) required during microfabrication will be close to the thickness of the film thickness. Caused by difficulties. The suitable film thickness range is different depending on the display used. The resistive film type touch panel is preferably 80 to 5 0 0A. It has a matrix type like the S TN LCD. In the case of a display having an electrode structure, it is preferable to set it to 2,000 to 3500 people. Examples Hereinafter, the present invention will be described in more detail by way of examples, but the present invention is not limited thereto. Example 1 450 g of indium oxide powder, 50 g of tin oxide powder, and 7.2 g of magnesium oxide powder were transferred into a polyethylene cymbal, and mixed with a dry ball mill for 7 2 hours to prepare a mixed powder. This powder was placed in a mold, and pressed into a compact at a pressure of 300 k g / c m2. This compact was densified using C I P at a pressure of 3 t ◦ n / cm 2. Next, this formed body 'was installed in a pure oxygen surrounding sintering furnace under the following conditions. The size of this paper is applicable to China National Standard (CNS) A4 (21〇χ 297 mm) -12- -Packing ------ 订 -I Order · τ (Please read the precautions on the back before Β page) --Line · 590995 Α7 ______ Β7 V. Description of the invention (1G) (Sintering conditions) Sintering temperature: 150 ° C, heating rate: 25. (: / Hr, sintering time: 6 hours, oxygen pressure: 50 mm Η 20 (gauge pressure), oxygen linear velocity: 2 · 7 cm / minute When the density of the obtained sintered body is measured by Archimedes method, it is 7 · 〇〇g / cm3 (relative density: 99 · 2%). The composition analysis of this sintered body was performed by EPAM (Electron Prove Micro Analysis). The results are shown in Table 1. ~ This sintered body was processed by wet processing A sintered body having a diameter of 4 inches and a thickness of 6 mm was formed by using indium solder to an oxygen copper gasket plate as a leather material. This target was sputtered for evaluation of a thin film under the following sputtering conditions. (Sputtering conditions ) Substrate: glass substrate, DC power: 200 W, air pressure: 5. 〇m Το 〇 r, argon gas flow: 50 S C C M, 〇2 gas flow: 0.1 SCCM, substrate temperature: 200 ° C, film thickness: 3,000 people. The obtained film had a resistivity of 7 9 0 # Ω · cm and a transmittance of 8 6 · 2% at 5 50 nm. In addition, the 'transmittance' is measured with reference to air, and the transmittance of the glass substrate is measured. The glass substrate was # 7059 manufactured by Corning Corporation. Next, the surface of the obtained film was observed with AFM. The results are shown in the photograph in Figure 3. No domain structure has been observed. This paper size applies to China National Standard (CNS) A4 specifications (210 χ 297 Public Love ^ -13 · ---------------- 岿-(Please read the precautions on the back first) (This page is repeated again.) I · τ-line · Printed by the Consumer Property Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs 590995 A7 B7 V. Description of the invention (11) Secondly, the composition of the inspection film is checked using E PMA. The results are shown in Table 2 450 g of indium oxide powder, 50 g of tin oxide powder, and 15 g of magnesium oxide powder were transferred into a polyethylene cymbal, and mixed with a dry ball mill for 7 2 hours to prepare a mixed powder. This powder was placed in a mold holder, The compact was press-molded at 300 kg / cm 2 to form a compact. The compact was subjected to densification using CIP at a pressure of 3 t ο n / cm 2. The compact was then placed in a pure oxygen surrounding gas sintering furnace. And sintered under the same conditions as in Example 1. When the density of the obtained tin oxide powder was measured by the Archimedes method, it was 6.86 g / cm3 (relative density: 98.6%). This sintered body was subjected to EP M A The composition analysis. The results are shown in Table VII. This sintered body was processed into a diameter of 4 inches and a thickness of 6 m by a wet processing method. The sintered body of m was bonded to a gasket made of oxygen-free copper by indium soldering to make a target. This target was sputtered to evaluate the film under the following sputtering conditions. (Sputtering conditions) Substrate: glass substrate, DC Electrical work: 2 0 0 W, air pressure: 5 · 0 m Τ ο 〇r, argon gas flow: 50 SCC Μ, 〇2 gas flow: 〇. 1SCCM, substrate temperature: 200 ° C, film thickness: 3 Ο Ο Ο A. The obtained film has a resistivity of 1 8 0 0 0 // Ω · c m, at ---- J. --- · ----- Installation --- *-(Please read the precautions on the back before B page) (CNS) A4 specification (210 X 297 mm) -14- 590995 A7 ------- B7 V. Description of the invention (12) The transmittance at 550nm is 85.9%. The conditions for measuring the transmittance were the same as those in Example 1. Next, the surface of the obtained film was observed with A FM. The results are shown in the photo in Figure 4. No domain structure has been observed. Secondly, the composition of the film was examined using E PMA. The results are shown in Table 2. Example 3 450 g of indium oxide powder, 50 g of tin oxide powder, and 3 4 g of magnesium oxide powder were transferred into a polyethylene cymbal, and mixed with a dry ball mill for 7 2 hours to prepare a mixed powder. This powder was placed in a mold, and was molded into a compact at a pressure of 300 k g / c m2. This compact was subjected to densification using C I P at a pressure of 3 t ο η / cm 2. Next, this formed body 'was set in a pure oxygen surrounding gas sintering furnace under the same conditions as in Example 1. When the density of the obtained sintered body was measured by the Archimedes method, it was 6.65 g / cm3 (relative density: 98.7%). The composition analysis of this sintered body was performed using EPA. The results are shown in Table 1. This sintered body was processed into a sintered body with a diameter of 4 inches and a thickness of 6 mm by a wet processing method, and was bonded to a gasket plate made of oxygen-free copper by indium soldering to form a target. This target was sputtered under the following sputtering conditions for evaluation of the thin film. (Sputtering conditions) Substrate: glass substrate, DC power: 2 0 0 W, air pressure:------------(Please read the precautions on the back before this page) Γ Intellectual Property of the Ministry of Economic Affairs However, the paper size of the paper produced by the Bureau ’s Consumer Cooperatives is subject to the Chinese National Standard (CNS) A4 (210 χ 297 mm) -15-590995 A7 _____ B7 Printed by the Employees ’Cooperatives of the Intellectual Property Bureau of the Ministry of Economic Affairs 5. Description of the invention (13) 5 · OmToor, argon flow rate: 50 SCCM, 〇2 gas flow rate: 0 · 1 SCCM, substrate temperature: 200 ° C, film thickness: 300 OA. The obtained film had a resistivity of 35,000 cm and a transmittance at 5500 nm of 85.9%. The conditions for measuring the transmittance were the same as those in Example 1. Next, the surface of the obtained film was observed with AFM. The results are shown in the photograph in Figure 5. No domain structure has been observed. > Next, the composition of the film was examined using EP MA. The results are shown in Table 2. Comparative Example 1 450 g of indium oxide powder and 50 g of tin oxide powder were transferred into a polyethylene hafnium, and mixed with a dry ball mill for 7 to 2 hours to prepare a mixed powder. This powder was placed in a mold, and was pressed into a compact at a pressure of 300 k g / cm 2. This compact was subjected to densification using C I P at a pressure of 3 t ο η / cm 2. Next, this formed body 'was set in a pure oxygen surrounding gas sintering furnace under the same conditions as in Example 1. When the density of the obtained sintered body was measured by Archimedes, it was 7.12 g / cm3 (relative density: 99.4%). The composition analysis of this sintered body was performed using ΕΡΜΑ. The results are shown in Table 1. This sintered body was processed into a sintered body having a diameter of 4 inches and a thickness of 6 mm by a wet processing method, and was dry bonded to a gasket plate made of oxygen-free copper by indium dry welding to form a target. (Please read the precautions on the back before this page) Install the W1J cable. This paper size applies the Chinese National Standard (CNS) A4 specification (210 X 297 mm) -16- 590995 A7 _ B7 V. Description of the invention (14) Sputter this target under the following sputtering conditions for film evaluation . (Sputtering conditions) Substrate: glass substrate, DC power: 200W, air pressure: 5 · OmToor, argon flow rate: 50SCCM, 〇2 gas flow rate: 0.1SCCM, substrate temperature: 200 ° C, film thickness: 3 0 0 0 A. The obtained film had a resistivity of 200 Ω // Ω,, · c m, and a transmittance at 5 50 n m was 86.7%. The measurement conditions of the transmittance were the same as those of Example 1. Next, the surface of the obtained film was observed with AFM. The results are shown in the photograph in Figure 6. Observed domain structure. Secondly, the composition of the membrane was examined using EP M A. The results are shown in Table 2. Example 4 Indium oxide powder 450 g, tin oxide powder 50 g, and magnesium oxide powder 3.6 g were transferred to a polyethylene cymbal, and mixed with a dry ball mill for 72 inches, to prepare a mixed powder. This powder was placed in a mold, and was pressed into a molded body at a pressure of 300 k g / cm2. This compact was subjected to a densification process using C 丨 ρ at a pressure of 3 ton / cm2. Next, the formed body was set in a pure oxygen surrounding gas sintering furnace to sinter in a condition similar to that of the sinus example 1. When the density of the obtained tin oxide powder was measured by the Archimedes method, it was 7.09 g / cm3 (relative density: 99.7%). Use this paper size to apply Chinese National Standard (CNS) A4 specification (210 X 297 mm) _ I --- II ΙΊ III installed i I * * (Please read the precautions on the back before this page) Printed by the Consumer Cooperatives of the Intellectual Property Bureau of the Ministry of Economic Affairs -17- 590995 A7 ___ B7 V. Description of Invention (15) ΕΡ Μ A The composition analysis of this sintered body. The results are shown in Table 1. This sintered body was processed into a sintered body having a diameter of 4 inches and a thickness of 6 mm by a wet processing method, and was dry bonded to a gasket plate made of oxygen-free copper by indium dry welding to form a target. This target was sputtered under the following sputtering conditions for evaluation of the thin film. (Sputtering conditions) Substrate: glass substrate, DC electric power: 2 0 > 0 W, air pressure: 5 · OmToor, argon flow rate: 50SCCM, 〇2 gas flow rate: 0 · 1SCCM, substrate temperature: 300 ° C, Film thickness: 120 in. Second, the composition of the membrane was examined using EPMA. The results are shown in Table 1. The obtained film was subjected to a heat resistance test under the following conditions to check the rate of change of the resistivity. In addition, the change rate (%) is obtained from (resistance coefficient after test-resistance coefficient before test) X 1 0 0 / resistance coefficient before test. Please read the precautions on the back first and then print it out. Printed by the Consumer Cooperatives of the Intellectual Property Bureau of the Ministry of Economic Affairs (Heat Test Conditions). Oxygen enclosure: Atmospheric, temperature: 100 ~ 250 ° C, holding time: 30 minutes In Fig. 7, the resistivity hardly changes at any temperature between 100 ° C and 250 ° C. In addition, a film obtained by the same method was subjected to a humidity resistance test under the following conditions to check the rate of change of the resistivity. However, the rate of change (%) is determined by (This paper size applies the Chinese National Standard (CNS) A4 specification (210 X 297 mm) -18- 590995 A7 B7 V. Description of the invention (16) Resistivity after test 1 Resistivity before test) x 1 000 / Resistivity before test. (Moisture resistance test conditions) Temperature: 60 ° C, humidity: 90% R Η, holding time: 500 hours The results are shown in FIG. 8. Even after 500 hours, the resistivity hardly changes and appears stable. '' Example 5 A target produced under the same conditions as in Example 1 was used, and a film was formed under the same sputtering conditions as in Example 4. Then, a heat resistance test and a humidity resistance test were performed under the same conditions as in Example 4. The results are shown in Figure 7. Regardless of the temperature at any temperature between 1 0 and 2 5 0 t, there is almost no change in the resistivity. The results of the moisture resistance test are shown in FIG. 8. Even after 500 hours, the resistivity hardly changes and appears stable. Comparative Example 2 Printed by the Consumer Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs ----- J. --------- Packing --- (Please read the precautions on the back before B page) The target material manufactured under the same conditions as the scope of patent application 1 is used, and the same sputtering as in Example 4 After film formation under the same conditions, a heat resistance test and a moisture resistance test were performed under the same conditions as in Example 4. The results of the heat resistance test are shown in Section 7_. Based on the implementation of the heat treatment at 100 ~ 250 ° C, it is observed that the increase is about 5% at 200 ° C, and the increase is about 24% at 250 ° C. With heat treatment at high temperatures, the resistivity increases significantly. This paper size applies the Chinese National Standard (CNS) A4 specification (210 X 297 mm) • 19- 590995 A7 ______ Β7 ____ V. Description of the invention (17) The results of the moisture resistance test are shown in Figure 8 It will increase after an hour, and increase the resistivity by 80% after 500 hours. Comparative Example 3 450 g of indium oxide powder, 50 g of tin oxide powder, and 1 · 8 g of magnesium oxide powder were transferred into a polyethylene cymbal and mixed with a dry ball mill for 7 2 hours to prepare a mixed powder. This powder was placed in a mold, and was molded into a compact at a pressure of 3,007 g / cm2. This compact was subjected to a densification treatment using C I P at a pressure of 3 ton / cm2. Next, the formed body was set in a pure oxygen surrounding gas sintering furnace, and sintered under the following conditions. (Sintering conditions) Sintering temperature: 15 0 0 t :, heating rate: 25 ° C / hr, sintering time: 6 hours, oxygen pressure: 50 mm Η 20 (gauge pressure), oxygen linear velocity: 2 · 7 cm / minute. When the density of the obtained sintered fp was measured by the Archimedes method, it was 7.12 g / cm3 (relative density: 99.9%). The composition analysis of this sintered body was performed using EPMA (Electron Prove Micro Analysis). The results are shown in Table 1. This sintered body was processed into a sintered body having a diameter of 4 inches and a thickness of 6 mm by a wet processing method, and was dry bonded to a gasket plate made of oxygen-free copper by indium dry welding to form a target. This target was sputtered under the following sputtering conditions for evaluation of the thin film. ----- ： --- · ----- install --- (Please read the precautions on the back first ||| this page) Standards are applicable to China National Standard (CNS) A4 specifications (210 X 297 mm) -20 · 590995 A7 B7 V. Description of the invention (18) (Sputtering conditions) Substrate: glass substrate, DC power: 2 0 0 W, air pressure : 5. OmToor, argon gas flow rate: 50 SCCM, 〇2 gas flow rate: 0.1 SCCM, substrate temperature: 200 ° C, film thickness: 300 OA. The obtained film had a resistivity of 2 1 0 // Ω · c m and a transmittance of 8 6 · 6% at 5 50 n m. Next, the surface of the obtained film was observed with AFM. The results are shown in the photograph in Figure 9. Unobserved domain structure. Second, the composition of the membrane was examined using EP M A. The results are shown in Table 2. Next, a heat resistance test and a humidity resistance test were performed under the same conditions as in Example 4. The results of the heat resistance test are shown in FIG. 7. With the implementation of heat treatment at 200 ~ 250 ° C, it is observed that the resistivity increases by about 2% at 200 ° C and about 10% at 250 ° C. The use of heat treatment at high temperatures significantly increases the resistivity. The results of the heat resistance test are shown in FIG. 8. It was observed that the resistivity increased by 300 hours and 45% by 500 hours. Example 6 Using the target obtained in Example 4, an I TO film was produced on a polycarbonate substrate. (Sputtering conditions) This paper size applies to China National Standard (CNS) A4 (210 X 297 mm) · 21------ J ----. ----- install ----% (Please read the precautions on the back before β page) Order and line. Printed by the Consumer Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs 590995 A7 B7 Printed by the Consumer Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs 5. Description of Invention (19) Substrate: Polycarbonate, DC Power: 200W, Air Pressure: 5 · OmToor, Argon Flow: 50SCCM, 〇2 gas flow: 0 · 25SCCM, substrate temperature: 70 ° C, film thickness: 12 OA. The composition analysis of the obtained film was performed using EP MA. The results are shown in _2. Next, the obtained film was subjected to a heat resistance test under the following conditions to examine the rate of change of the resistivity. • > (Heat resistance test conditions) Oxygen range: In the atmosphere, Temperature: 80 T :, Hold time: 90 minutes Change rate of resistivity is + 15%. Next, a thin film prepared in the same manner was subjected to a heat resistance test under the same conditions as in Example 4 to check the rate of change of the resistivity. The results are shown in Fig. 10, and after 500 hours, the resistivity also hardly changed but showed r ~ j-t r son-in-law. Example 7 Using the target prepared in Example 1, an I T 0 film was produced on a polycarbonate substrate under the same conditions as in Example 6. The composition analysis of the films was carried out using EP MA. The results are shown in Table 2. · Next, the obtained film was subjected to a heat resistance test under the same conditions as in Example 6, and the rate of change of the resistivity was checked. Change rate of resistivity (please read the precautions on the back before this page) 丨 Install i-wire. The size of this paper applies the Chinese National Standard (CNS) A4 specification (210 X 297 mm) -22- 9 9 90 A7 ___ Β7 ____ 5. Description of the invention (20) is + 1 1%. Next, a thin film obtained by the same method was subjected to a heat resistance test under the same conditions as in Example 6 to examine the rate of change of the resistivity. The results are shown in Fig. 10. After 500 hours, the resistivity was almost unchanged and it was ^ • / 7 son-in-law. Comparative Example 4 Using the target prepared in Comparative Example 1, an I TO film was produced on a polycarbonate substrate under the same conditions as in Example 6. The composition analysis of the films was carried out using EP Μ Α. The results are shown in Table 2. Next, the obtained film was subjected to a heat resistance test under the same conditions as in Example 6, and the rate of change of the resistivity was checked. The rate of change of the resistivity is a larger value of + 45%. Next, a thin film obtained by the same method was subjected to a heat resistance test under the same conditions as in Example 6, and the rate of change of the resistivity was checked. The results are shown in Fig. 10. Increasing after 300 hours' Observed after 500 hours The resistivity increased to 1000%. Example 8 450 g of indium oxide powder, 50 g of tin oxide powder, and 3 · 6 g of magnesium oxide powder were transferred into a polyethylene cymbal and mixed with a dry ball mill for 7 2 hours to prepare a rhenium mixed powder. An appropriate amount of this powder was placed in a mold and pressed into a molded body at a pressure of 300 kg / cm2. At 3 t 〇n this paper size applies Chinese National Standard (CNS) A4 specifications (21G χ 297 public love) Γ ^ Γ ------- ------ T --- · ----- Install --- --- (Please read the precautions on the back before this page) 丨 order1. line. Printed by the Consumer Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs 590995 A7 ________ B7 Printed by the Consumer Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs V. The pressure of the invention (21) / C m 2 . The size of the obtained molded body was 23 mm × 16 mmt. When the internal shape of the molded body was measured, the density was 4.0 g / cm3 (relative density 56. 3%). Next, the composition analysis results of this formed body using E? Μ A are shown in Table 1. Using this formed body as a vapor deposition material, a film was formed by a vacuum vapor deposition method under the following conditions, and evaluation of the thin film was performed. > (Vacuum deposition conditions) Substrate: glass substrate, film thickness: 120 persons, partial pressure of oxygen: 2x 1 〇 1 t 〇 r r Next, the composition of the film was examined using EP M A. The results are shown in Table 2. The obtained film was subjected to a heat resistance test under the same conditions as in Example 4. Check the rate of change of the resistivity. The results are shown in Fig. 11. Even at any temperature between 100 ° C and 250 ° C, the resistivity has hardly changed. Second, a film obtained by the same method was subjected to a heat resistance test under the same conditions as in Example 4 to check the rate of change of the resistivity. The results are shown in Figs. After 500 hours, the resistivity was almost unchanged and stable.眚 Example 9 Indium oxide powder 450 g, tin oxide powder 50 g and magnesium oxide The paper size is in accordance with China National Standard (CNS) A4 (210 X 297 mm) -24- Please read it first. Read the precautions on the back and then bind. 590 995 Printed by the Consumers ’Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs A7 B7 V. Description of the invention (22) Powder 7 · 2 g is moved into a polyethylene cymbal and mixed with a dry ball mill for 7 2 hours. Make mixed powder. An appropriate amount of this powder was placed in a mold and pressed into a molded body at a pressure of 300 kg / cm2. This compact was subjected to a densification process using C I P at a pressure of 3 t on / cm 2. The size of the obtained formed body was 2 3 m m X 1 6 m m t. When the density of the obtained molded body was measured from the shape, it was 3.9 g / cm3 (relative density: 55.2%). Secondly, the composition analysis of this formed body was performed using EPMA. The results are shown in Table 1. Using this formed body as a vapor deposition material, a film was formed by a vacuum vapor deposition method under the same conditions as in Example 8 and evaluation of the thin film was performed. Secondly, the composition of the membrane was examined using EPMA. The results are shown in Table 2. The obtained film was subjected to a heat resistance test under the same conditions as in Example 4. Check the rate of change of the resistivity. The results are shown in Figure 1. Even if < There is almost no change in the resistivity at any temperature of 1 0 to 2 5 0 C. Next, a thin film prepared by the same method was subjected to a heat resistance test under the same conditions as in Example 4 to check the rate of change of the resistivity. The results are shown in Figs. After 500 hours, the resistivity showed little change and remained stable. Comparative Example 5 Moved 450 g of indium oxide powder and 50 g of tin oxide powder into polyethylene ----- T ---, ----- pack-*-(Please read the precautions on the back before (β page) Order: This paper size applies to Chinese National Standard (CNS) A4 (210 X 297 mm) 25 590995 A7 B7 Printed by the Consumer Cooperatives of the Intellectual Property Bureau of the Ministry of Economic Affairs 5. Description of the invention (23) , Using a dry ball mill for 72 hours to make a mixed powder. An appropriate amount of this powder was placed in a mold, and the molded product was molded under a pressure of 300 k g / cm 2. This compact was subjected to a densification treatment using C I P at a pressure of 3 t ο n / cm2. The size of the obtained molded body was 23 mm × 16 mmt. When the density of the obtained molded body was measured from the shape, it was 4 · lg / cm3 (relative density: 57.3%). Secondly, the composition analysis of this formed body was performed using EPMA. The results are shown in Table 1. > Using this formed body as a vapor deposition material, a film was formed by a vacuum vapor deposition method under the same conditions as in Example 8 and evaluation of the thin film was performed. Secondly, the composition of the membrane was examined using EPMA. The results are shown in Table 2. The results of the heat resistance test are shown in FIG. 11. With the implementation of heat treatment at 2000 to 250 ° C, it was observed that a resistivity increased by about 7% at 2000t 'and about 30% at 250 ° C. With heat treatment at high temperatures, the resistivity will increase significantly. The results of the heat resistance test are shown in Fig. 12. It is observed that after an increase of 300 hours, the resistivity increases by 90% after 500 hours. Example 10 Using the target material obtained in Example 1, an I TO film was fabricated on a glass substrate under the same conditions as in Example 1 to a thickness of 500 people. The transmittance of the obtained film was measured. The measurement wavelengths were 400, 500, 550, 600, 700, and 800 nm, and the same glass substrate was used as a reference, and the transmittance of only the film was measured. -— — — 111 — ——— — — — — — (Please read the precautions on the back before you go to this page) _Ί * I order · i-line · This paper size applies to China National Standard (CNS) A4 (210 X 297 public love) -26- 590995 A7 B7 V. Description of the invention (24) The results are shown in Table 3. After full wavelength, a transmittance of more than 80% can be obtained. Printed on Table 1 of the sintered body composition analysis result of the Consumer Cooperative of the Intellectual Property Bureau of the Ministry of Economy. In S η Mg 〇Mg / (In + Sn + Mg) atm.%% Example 1 34.8 3.4 1.9 59.9 4.7 Example 2 33.4 3.3 3.8 5 9.5 9.4 Example 3 30.5 3.0 7.8 58.7 18.9 Example 4 35.4 3.5 1.0 60.1 2.4 Example 8 34.9 3.6 1.0 60.5 2.5 Example 9 34.3 3.5 1.9 60.3 4.8 Comparative Example 1 36.2 3.5-60.3 0 Comparative Example 3 35.8 3.5 0.49 60.2 1.2 Comparative Example 5 35.6 3.7 — 60.7 0 ----- J .--- 〆 ----- Installation ---... (Please read the (Notes on this page again) Ordering • Line. This paper size is applicable to China National Standard (CNS) A4 (210 χ 297 mm) -2Ί-590995 A7 B7 V. Description of Invention () 25 Table 2 Composition analysis result In Sn Mg 0Mg / (In + Sn + Mg) atm.%% Example 1 35.1 2.8 1.9 60.2 4.8 Example 2 33.7 2.7 3.8 59.8 9.4 Example 3 30.8 2.4 7.8 59.0 19.1 Example 4 35.7 2.9 1.0 60.4 2.4 Example 6 35.5 3.0 1.0 60.5 ν 2.5 Example 7 34.9 2.9 1.9 60.3 4.8 Example 8 35.0 3.6 1.0 60.4 2.5 Example 9 34.4 3.5 1.9 60.2 4.8 Comparative Example 1 36.5 3.0-60.6 0.0 Comparative Example 3 36.1 2.9 0.49 60.5 1.2 Comparative Example 4 36.0 3.6-60.4 0 Comparative Example 5 35.7 3.7 — 60.6 0 (Please read first Refill the notes on the back.
、1T 線 表3 膜之透過率的測定結果 膜厚 [A ] 透過率[%] 400nm 5 OOnm 5 5 Onm 600nm 7 00nm 800nm 實施例1 0 5000 82.5 83.5 91.3 86.3 86.4 82.7 經濟部智慧財產局員工消費合作社印製 發明之功效 __ 本發明之申請專利範圍第1項之含有氧化鎂之I T 0 本紙張尺度適用中國國家標準（CNS ) A4規格（210X 297公釐） -28- 590995 A7 B7 五、發明說明（26) 燒結體，申請專利範圍第2項之蒸鍍材料、或申請專利範 圍第3項之濺鍍靶材，係以此爲材料，可製造出具有優越 特性之含有氧化鎂之I TO薄膜。亦即，於I TO薄膜上 可得不具有特有的領域構造之平坦膜，較觀發生蝕刻殘渣 ’可得微細加工優越的申請專利範圍第4項之薄膜。又即 使在觸板類膜厚較薄的領域使用時，可得電阻係數之變化 率較小的透明導電膜。 又，若申請專利範圍第5項之發明〃可構成具有採用 上述I T ◦薄膜之優越特性的各種機器。 再者，若依申請專利範圍第6項之發明，可提供微細 加工性優越的薄膜。 β 再者，若依申請專利範圍第7項之發明時，可提供放 電之安定性優越，節瘤發生量較少的濺鍍靶材。 圖式之簡單說明 第1圖爲表習用的I T〇薄膜之領域構造圖。 第2圖爲表習用的I T〇薄膜之表面圖。 第3圖爲表示實施例1所得的薄膜之表面圖。 第4圖爲示示實施例2所得的薄膜之表面圖。 第5圖爲表示實施例3所得的薄膜之表面圖。 第6圖爲示示比較例1所得的薄膜之表面圖。 第7圖爲表示實施例4、5及比較例2、3所得的膜 之耐濕試驗之結巣圖。 第8圖爲表示實施例4、5及比較例2、3所得的膜 本紙張尺度適用中國國家標準（CNS)A4規格（210 X 297公釐） -29 - -----J.---.-----裝—— 睿 * (請先閱讀背面之注意事項再^^本頁) 「訂· 線· 經濟部智慧財產局員工消費合作社印製 590995 A7 B7 五、發明說明（27 之 膜 的 。 得 圖所 面 4 表例 之較 膜比 薄及 的 7 得 、 所 6 3 例 例施 。 較實 圖比示 果示表 結表爲 之爲圖 驗圖 ο 試 9 1 濕第第 耐 之 例 施 實 。 示 圖表 果爲 結圖 之 1 驗 1 試第 濕 耐 之 膜 的 得 所 5 例 較 比 及 9 例 施 實 。 示 圖表 果爲 結圖 之 2 驗 1 試第 熱 耐 之 膜 的 得 所 5 例 較 比 及 圖 果 結 之 驗 試 濕 耐 ------：---·-----裝—— ♦ » (請先閱讀背面之注意事項再本頁) 丨-tr· .線- 經濟部智慧財產局員工消費合作社印製 本紙張尺度適用中國國家標準（CNS)A4規格（210 X 297公釐） -30-1T line table 3 Measurement results of the transmittance of the film Film thickness [A] Transmittance [%] 400nm 5 OOnm 5 5 Onm 600nm 7 00nm 800nm Efficacy of the cooperative printed invention __ IT with magnesium oxide in item 1 of the scope of patent application of the present invention 0 This paper size applies to China National Standard (CNS) A4 specification (210X 297 mm) -28- 590995 A7 B7 V. Description of the invention (26) Sintered body, vapor deposition material in the scope of patent application No. 2 or sputtering target in the scope of patent application No. 3, based on this material, can produce magnesium oxide-containing I with superior characteristics TO film. That is, a flat film having no unique field structure can be obtained on the ITO thin film, and relatively large etching residues can be obtained, and a thin film excellent in microfabrication can be obtained. In addition, even when used in an area where the film thickness of a touch panel is thin, a transparent conductive film having a small rate of change in resistivity can be obtained. In addition, if the invention in the fifth aspect of the patent application is filed, it is possible to construct a variety of devices having superior characteristics using the above-mentioned I T ◦ thin film. Furthermore, according to the invention in the sixth aspect of the patent application, a thin film having excellent fine processability can be provided. β Furthermore, if the invention according to item 7 of the scope of patent application is applied, it can provide a sputtering target with excellent stability of discharge and less occurrence of nodules. Brief Description of the Drawings Figure 1 shows the field structure of the conventional I TO film. Fig. 2 is a surface view of a conventional I TO film. FIG. 3 is a surface view showing a film obtained in Example 1. FIG. FIG. 4 is a surface view showing a film obtained in Example 2. FIG. FIG. 5 is a surface view showing a film obtained in Example 3. FIG. FIG. 6 is a surface view showing a film obtained in Comparative Example 1. FIG. Fig. 7 is a graph showing the moisture resistance test results of the films obtained in Examples 4 and 5 and Comparative Examples 2 and 3. Figure 8 shows the film sizes obtained in Examples 4 and 5 and Comparative Examples 2 and 3. The paper size is in accordance with China National Standard (CNS) A4 (210 X 297 mm) -29------ J .-- -.----- Equipment—— Rui * (Please read the precautions on the back before ^^ this page) "Order · Line · Printed by the Intellectual Property Bureau of the Ministry of Economic Affairs Consumer Cooperatives 590995 A7 B7 V. Description of the invention (27 The results are shown in Figure 4. The 4 examples are thinner than the film, and the 7 examples are obtained. The actual examples are compared with the actual ones, and the results are shown in the chart. Test 9 1 Wet The first example is implemented. The chart shows the results of the first test and the first test of the wet resistance of 5 cases compared with 9 cases. The chart shows the results of the second test of the first test of the heat resistance The film's success in 5 cases is compared with the test results of the figure and the result of moisture resistance ------: ---------- install-♦ »(Please read the precautions on the back before this page ) 丨 -tr · .line-printed by the Consumers' Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs, the paper size is applicable to China National Standard (CNS) A4 (210 X 297 mm) -30-