JP2010062388A - ダイヤモンド半導体素子 - Google Patents
ダイヤモンド半導体素子 Download PDFInfo
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- JP2010062388A JP2010062388A JP2008227459A JP2008227459A JP2010062388A JP 2010062388 A JP2010062388 A JP 2010062388A JP 2008227459 A JP2008227459 A JP 2008227459A JP 2008227459 A JP2008227459 A JP 2008227459A JP 2010062388 A JP2010062388 A JP 2010062388A
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Abstract
【解決手段】ダイヤモンド層の上に、Al系またはAu系の配線膜、パッド金属膜、および金属ワイヤを備えたダイヤモンド半導体素子であって、パッド金属膜は、配線膜および金属ワイヤと電気的に接続されており、且つ、白金族金属またはその合金で構成されている。
【選択図】図2
Description
(ア)配線膜がAl系合金で構成されているときはAu系合金の金属ワイヤを用いる。
(イ)配線膜がAu系合金で構成されているときはAl系合金またはAu系合金の金属ワイヤを用いる。
(ウ)配線膜が酸化物導電膜で構成されているときはAu系合金の金属ワイヤを用いる。
本実施例では、以下のようにして、図1に示す電界効果トランジスタを作製した。この実施例では、ソースパッド金属膜およびドレインパッド金属膜にPtを、ゲート電極用ワイヤボンディングパッドに同じくPtを用い、ゲート電極およびゲート配線にはAlを用いている。ゲート電極用ワイヤボンディングパッドには、上記のAl配線膜とAuワイヤを接続している。なお、図には示していないが、ソース電極およびドレイン電極には直接、Auワイヤをボンディングしている。参考のため、図2に、図1のB−B’線での概略断面図を、図3に、図1のA−A’線での概略断面図を示す。
ちなみに、上記トランジスタのトランジスタ特性を測定したところ、良好な変調特性が確認できた。
Ptゲートパッド金属膜7を形成せず、その代わりにAlゲートパッド金属膜を、Alゲート電極9の形成と同時にその一体物として形成したこと以外は、実施例1と同様にしてトランジスタを形成した。これに実施例1と同様にしてAu金属ワイヤをボンディングしようとしたところ、Alゲートパッド金属膜がAu金属ワイヤに付着してダイヤモンド基板から剥離した。
本実施例では、以下のようにして、図4(Al配線膜を使用)に示すショットキーバリアダイオードを作製した。この実施例では、Ptパッド金属膜に、Al配線膜およびAu金属ワイヤをボンディングしている。
ちなみにバイアスを±10V印加したところ、順バイアスでの電流値は60mAであり、逆バイアスでの電流値は50pA以下であり、約9桁の整流性が確認できた。
本比較例では、以下のようにしてショットキーバリアダイオードを作製した。すなわち、アンドープダイヤモンドの領域IのAl膜を湿式エッチングせずに残し、且つPtをスパッタ成膜しなかったこと以外は実施例2と同様にして、Siウェハ、高濃度ドープダイヤモンド、低濃度ドープダイヤモンド、アンドープダイヤモンド及びAl配線膜(即ちAl電極とAlパッド金属膜との一体物)からなるダイオードを形成した。
本実施例では、以下のようにして、図4(配線膜としてITOを使用)に示す発光ダイオードを作製した。この実施例では、Ptパッド金属膜に、ITO膜およびAu金属ワイヤをボンディングしている。
ちなみに順方向バイアスを10〜40V印加したところ、5〜100mAの電流が流れ、青みがかった白色LEDが観測された。また整流性も約10桁あることを確認した。
パッド金属膜をPtではなくAlで形成したこと以外は、実施例3と同様にしてSiウェハ、高濃度ドープダイヤモンド、低濃度ドープダイヤモンド、アンドープダイヤモンド、透明導電膜(ITO膜)及びAlパッド金属膜からなるダイオードを形成した。
Claims (2)
- ダイヤモンド層の上に、配線膜、金属ワイヤ、並びに前記配線膜および前記金属ワイヤと電気的に接続されているパッド金属膜を備えたダイヤモンド半導体素子であって、
前記配線膜は、Al系合金若しくはAu系合金、または酸化物導電膜で構成されており、
前記パッド金属膜は、白金族金属またはその合金で構成されていることを特徴とするダイヤモンド半導体素子。 - 前記配線膜がAl系合金で構成されているときはAu系合金の金属ワイヤを用い、前記配線膜がAu系合金で構成されているときはAl系合金またはAu系合金の金属ワイヤを用い、前記配線膜が酸化物導電膜で構成されているときはAu系合金の金属ワイヤを用いる請求項1に記載のダイヤモンド半導体素子。
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JP2014150258A (ja) * | 2013-01-31 | 2014-08-21 | Seagate Technology Llc | 周囲温度ボールボンディング |
JP7420763B2 (ja) | 2015-07-30 | 2024-01-23 | 信越化学工業株式会社 | ダイヤモンド電子素子及びダイヤモンド電子素子の製造方法 |
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JPH03263872A (ja) * | 1990-03-13 | 1991-11-25 | Kobe Steel Ltd | Mis型ダイヤモンド電界効果トランジスタ |
JP2002118257A (ja) * | 2000-10-06 | 2002-04-19 | Kobe Steel Ltd | ダイヤモンド半導体装置 |
JP2003142743A (ja) * | 2002-08-06 | 2003-05-16 | Semiconductor Energy Lab Co Ltd | 素 子 |
JP2007294899A (ja) * | 2006-03-31 | 2007-11-08 | Dowa Electronics Materials Co Ltd | 半田層及びそれを用いた電子デバイス接合用基板並びに電子デバイス接合用サブマウント |
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JPH03263872A (ja) * | 1990-03-13 | 1991-11-25 | Kobe Steel Ltd | Mis型ダイヤモンド電界効果トランジスタ |
JP2002118257A (ja) * | 2000-10-06 | 2002-04-19 | Kobe Steel Ltd | ダイヤモンド半導体装置 |
JP2003142743A (ja) * | 2002-08-06 | 2003-05-16 | Semiconductor Energy Lab Co Ltd | 素 子 |
JP2007294899A (ja) * | 2006-03-31 | 2007-11-08 | Dowa Electronics Materials Co Ltd | 半田層及びそれを用いた電子デバイス接合用基板並びに電子デバイス接合用サブマウント |
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JP2014150258A (ja) * | 2013-01-31 | 2014-08-21 | Seagate Technology Llc | 周囲温度ボールボンディング |
JP7420763B2 (ja) | 2015-07-30 | 2024-01-23 | 信越化学工業株式会社 | ダイヤモンド電子素子及びダイヤモンド電子素子の製造方法 |
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