JP2010053402A5 - - Google Patents
Download PDFInfo
- Publication number
- JP2010053402A5 JP2010053402A5 JP2008219784A JP2008219784A JP2010053402A5 JP 2010053402 A5 JP2010053402 A5 JP 2010053402A5 JP 2008219784 A JP2008219784 A JP 2008219784A JP 2008219784 A JP2008219784 A JP 2008219784A JP 2010053402 A5 JP2010053402 A5 JP 2010053402A5
- Authority
- JP
- Japan
- Prior art keywords
- substrate
- process chamber
- metal film
- forming
- film
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000000758 substrate Substances 0.000 claims 24
- 239000010408 film Substances 0.000 claims 18
- 238000000034 method Methods 0.000 claims 17
- 239000002184 metal Substances 0.000 claims 14
- 229910052751 metal Inorganic materials 0.000 claims 14
- 238000005477 sputtering target Methods 0.000 claims 8
- 238000004519 manufacturing process Methods 0.000 claims 7
- 239000010409 thin film Substances 0.000 claims 6
- 238000010438 heat treatment Methods 0.000 claims 4
- 238000004544 sputter deposition Methods 0.000 claims 4
- 238000007740 vapor deposition Methods 0.000 claims 3
- 230000015572 biosynthetic process Effects 0.000 claims 2
- 238000007599 discharging Methods 0.000 claims 2
- 238000001704 evaporation Methods 0.000 claims 2
- 238000000151 deposition Methods 0.000 claims 1
- 230000008021 deposition Effects 0.000 claims 1
- 230000008020 evaporation Effects 0.000 claims 1
- 229910052741 iridium Inorganic materials 0.000 claims 1
- 229910052697 platinum Inorganic materials 0.000 claims 1
- 229910052707 ruthenium Inorganic materials 0.000 claims 1
- 238000000427 thin-film deposition Methods 0.000 claims 1
Priority Applications (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2008219784A JP5256466B2 (ja) | 2008-08-28 | 2008-08-28 | 成膜装置及び酸化物薄膜成膜用基板の製造方法 |
| PCT/JP2009/064303 WO2010024131A1 (ja) | 2008-08-28 | 2009-08-13 | 成膜装置及び酸化物薄膜成膜用基板の製造方法 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2008219784A JP5256466B2 (ja) | 2008-08-28 | 2008-08-28 | 成膜装置及び酸化物薄膜成膜用基板の製造方法 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2010053402A JP2010053402A (ja) | 2010-03-11 |
| JP2010053402A5 true JP2010053402A5 (cg-RX-API-DMAC7.html) | 2011-10-13 |
| JP5256466B2 JP5256466B2 (ja) | 2013-08-07 |
Family
ID=41721300
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2008219784A Expired - Fee Related JP5256466B2 (ja) | 2008-08-28 | 2008-08-28 | 成膜装置及び酸化物薄膜成膜用基板の製造方法 |
Country Status (2)
| Country | Link |
|---|---|
| JP (1) | JP5256466B2 (cg-RX-API-DMAC7.html) |
| WO (1) | WO2010024131A1 (cg-RX-API-DMAC7.html) |
Family Cites Families (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS58177463A (ja) * | 1982-04-12 | 1983-10-18 | Hitachi Ltd | 積層薄膜成膜装置 |
| JP2971586B2 (ja) * | 1990-12-21 | 1999-11-08 | 株式会社リコー | 薄膜形成装置 |
| JP4167833B2 (ja) * | 2002-01-24 | 2008-10-22 | 株式会社ユーテック | 成膜装置、酸化物薄膜成膜用基板及びその製造方法 |
| JP4586956B2 (ja) * | 2002-12-24 | 2010-11-24 | セイコーエプソン株式会社 | 電極膜の製造方法 |
| JP2006108291A (ja) * | 2004-10-04 | 2006-04-20 | Seiko Epson Corp | 強誘電体キャパシタ及びその製造方法、並びに強誘電体メモリ装置 |
-
2008
- 2008-08-28 JP JP2008219784A patent/JP5256466B2/ja not_active Expired - Fee Related
-
2009
- 2009-08-13 WO PCT/JP2009/064303 patent/WO2010024131A1/ja not_active Ceased
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| JP2014524974A5 (cg-RX-API-DMAC7.html) | ||
| CN106252460B (zh) | 一种大面积钙钛矿太阳能电池的制作方法及系统 | |
| JP2017076768A5 (ja) | 酸化物の作製方法 | |
| WO2012116259A3 (en) | Dry chemical cleaning for gate stack preparation | |
| JP2011199271A5 (ja) | 成膜装置 | |
| CN103314128A (zh) | 耐指纹镀膜方法及装置 | |
| CN106835030A (zh) | 大角度多波段红外高增透膜结构及其制备方法 | |
| WO2017062355A3 (en) | Methods for depositing dielectric barrier layers and aluminum containing etch stop layers | |
| JP2014164882A (ja) | 信頼性・加工性に優れた積層体およびフィルムセンサ並びに積層体製造方法 | |
| CN102686074A (zh) | 电子装置外壳及其制造方法 | |
| JP2018093166A5 (cg-RX-API-DMAC7.html) | ||
| Nazabal et al. | Amorphous thin film deposition | |
| JP2005320590A5 (ja) | コンビナトリアル成膜方法とそれに用いる成膜装置 | |
| JP2010053402A5 (cg-RX-API-DMAC7.html) | ||
| JP5526240B2 (ja) | 薄膜リチウム二次電池製造装置及び薄膜リチウム二次電池製造方法 | |
| JP2018148051A5 (ja) | 成膜装置、成膜方法 | |
| CN105112870B (zh) | 一种铁电氧化钒复合薄膜及其制备方法 | |
| JP2007039270A (ja) | 金属ドープTiO2薄膜の結晶化方法及び金属ドープTiO2薄膜を有する積層体 | |
| Sima et al. | Study on TiO2 thin films grown by advanced pulsed laser deposition on ITO | |
| Park et al. | Hydrogen-driven dramatically improved mechanical properties of amorphized ITO–Ag–ITO thin films | |
| 이재형 et al. | Influence of annealing temperature and atmosphere on the properties of ITO films deposited using a powdery target | |
| RU2009113263A (ru) | Способ нанесения керамического покрытия | |
| JP5256466B2 (ja) | 成膜装置及び酸化物薄膜成膜用基板の製造方法 | |
| JP2013020888A (ja) | 封止膜形成方法、リチウム二次電池の製造方法 | |
| CN102102170B (zh) | 变色薄膜的制备方法 |