JP5256466B2 - 成膜装置及び酸化物薄膜成膜用基板の製造方法 - Google Patents
成膜装置及び酸化物薄膜成膜用基板の製造方法 Download PDFInfo
- Publication number
- JP5256466B2 JP5256466B2 JP2008219784A JP2008219784A JP5256466B2 JP 5256466 B2 JP5256466 B2 JP 5256466B2 JP 2008219784 A JP2008219784 A JP 2008219784A JP 2008219784 A JP2008219784 A JP 2008219784A JP 5256466 B2 JP5256466 B2 JP 5256466B2
- Authority
- JP
- Japan
- Prior art keywords
- substrate
- metal film
- film
- process chamber
- forming
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 239000010408 film Substances 0.000 title claims description 123
- 239000000758 substrate Substances 0.000 title claims description 123
- 239000010409 thin film Substances 0.000 title claims description 50
- 238000004519 manufacturing process Methods 0.000 title claims description 22
- 239000002184 metal Substances 0.000 claims description 84
- 229910052751 metal Inorganic materials 0.000 claims description 84
- 238000000034 method Methods 0.000 claims description 49
- 238000004544 sputter deposition Methods 0.000 claims description 31
- 238000010438 heat treatment Methods 0.000 claims description 13
- 229910052741 iridium Inorganic materials 0.000 claims description 13
- 229910052707 ruthenium Inorganic materials 0.000 claims description 13
- 238000005477 sputtering target Methods 0.000 claims description 13
- 238000000151 deposition Methods 0.000 claims description 12
- 229910052697 platinum Inorganic materials 0.000 claims description 12
- 230000008021 deposition Effects 0.000 claims description 11
- 238000007740 vapor deposition Methods 0.000 claims description 10
- 238000001704 evaporation Methods 0.000 claims description 8
- 238000000427 thin-film deposition Methods 0.000 claims description 7
- 230000015572 biosynthetic process Effects 0.000 claims description 6
- 230000008020 evaporation Effects 0.000 claims description 5
- 238000007599 discharging Methods 0.000 claims description 4
- 230000000052 comparative effect Effects 0.000 description 8
- 239000011261 inert gas Substances 0.000 description 7
- 238000007796 conventional method Methods 0.000 description 6
- 239000007789 gas Substances 0.000 description 6
- 239000000463 material Substances 0.000 description 4
- 238000001816 cooling Methods 0.000 description 3
- 238000010586 diagram Methods 0.000 description 3
- 238000010894 electron beam technology Methods 0.000 description 3
- 238000011156 evaluation Methods 0.000 description 3
- 229910004298 SiO 2 Inorganic materials 0.000 description 2
- 238000000313 electron-beam-induced deposition Methods 0.000 description 2
- 238000002441 X-ray diffraction Methods 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 238000005566 electron beam evaporation Methods 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 238000010304 firing Methods 0.000 description 1
- 230000002265 prevention Effects 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 238000000638 solvent extraction Methods 0.000 description 1
- 238000001771 vacuum deposition Methods 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
- C23C14/3464—Sputtering using more than one target
Landscapes
- Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Physical Vapour Deposition (AREA)
Priority Applications (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2008219784A JP5256466B2 (ja) | 2008-08-28 | 2008-08-28 | 成膜装置及び酸化物薄膜成膜用基板の製造方法 |
| PCT/JP2009/064303 WO2010024131A1 (ja) | 2008-08-28 | 2009-08-13 | 成膜装置及び酸化物薄膜成膜用基板の製造方法 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2008219784A JP5256466B2 (ja) | 2008-08-28 | 2008-08-28 | 成膜装置及び酸化物薄膜成膜用基板の製造方法 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2010053402A JP2010053402A (ja) | 2010-03-11 |
| JP2010053402A5 JP2010053402A5 (cg-RX-API-DMAC7.html) | 2011-10-13 |
| JP5256466B2 true JP5256466B2 (ja) | 2013-08-07 |
Family
ID=41721300
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2008219784A Expired - Fee Related JP5256466B2 (ja) | 2008-08-28 | 2008-08-28 | 成膜装置及び酸化物薄膜成膜用基板の製造方法 |
Country Status (2)
| Country | Link |
|---|---|
| JP (1) | JP5256466B2 (cg-RX-API-DMAC7.html) |
| WO (1) | WO2010024131A1 (cg-RX-API-DMAC7.html) |
Family Cites Families (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS58177463A (ja) * | 1982-04-12 | 1983-10-18 | Hitachi Ltd | 積層薄膜成膜装置 |
| JP2971586B2 (ja) * | 1990-12-21 | 1999-11-08 | 株式会社リコー | 薄膜形成装置 |
| JP4167833B2 (ja) * | 2002-01-24 | 2008-10-22 | 株式会社ユーテック | 成膜装置、酸化物薄膜成膜用基板及びその製造方法 |
| JP4586956B2 (ja) * | 2002-12-24 | 2010-11-24 | セイコーエプソン株式会社 | 電極膜の製造方法 |
| JP2006108291A (ja) * | 2004-10-04 | 2006-04-20 | Seiko Epson Corp | 強誘電体キャパシタ及びその製造方法、並びに強誘電体メモリ装置 |
-
2008
- 2008-08-28 JP JP2008219784A patent/JP5256466B2/ja not_active Expired - Fee Related
-
2009
- 2009-08-13 WO PCT/JP2009/064303 patent/WO2010024131A1/ja not_active Ceased
Also Published As
| Publication number | Publication date |
|---|---|
| JP2010053402A (ja) | 2010-03-11 |
| WO2010024131A1 (ja) | 2010-03-04 |
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