JP2010045090A - Icチップ上への電子部品の実装 - Google Patents
Icチップ上への電子部品の実装 Download PDFInfo
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- JP2010045090A JP2010045090A JP2008206669A JP2008206669A JP2010045090A JP 2010045090 A JP2010045090 A JP 2010045090A JP 2008206669 A JP2008206669 A JP 2008206669A JP 2008206669 A JP2008206669 A JP 2008206669A JP 2010045090 A JP2010045090 A JP 2010045090A
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- electrode
- electronic component
- electrodes
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- semiconductor device
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Abstract
【解決手段】 本発明に係る半導体装置は、回路素子が形成されたシリコン基板100と、シリコン基板100上に形成された複数の突起状金属電極110A、110Bと、Auメッキされた電極142、144を有するキャパシタ140とを有する。キャパシタ140の電極142、144は、超音波熱圧着により突起状金属電極110A、110Bと金属結合される。
【選択図】 図3
Description
さらに本発明は、電子部品の電気的特性を安定化させ、小型化、低コスト化が可能な半導体装置を提供することを目的とする。
110A、110B:突起状金属電極
110C:延在された配線パターン
120:電極パッド
122:TiW/Cuバリアメタル層
124:Cu層
126:ニッケル層
128:パラジウム層
130:保護膜
132:開口
140、140A、140B、140C:キャパシタ
142、144:電極
146:本体部
148:間隙
Claims (17)
- 複数の回路素子が形成された半導体基板と、
半導体基板上に形成され、かつ前記複数の回路素子の選択された素子と電気的に接続された複数の突起状金属電極と、
第1および第2の電極を有する少なくとも1つの電子部品であって、前記第1の電極が第1の突起状金属電極に金属結合され、前記第2の電極が第2の突起状金属電極に金属結合され、前記半導体基板上に配される前記少なくとも1つの電子部品とを含み、
前記第1および第2の電極は、超音波熱圧着により第1および第2の突起状金属電極に接続される、半導体装置。 - 前記突起状金属電極は、電極、当該電極上に形成されたCu層、Cu層上に形成されたパラジウム層を含み、前記電子部品の第1および第2の電極には、金メッキが施され、前記金属結合は、金−パラジウム共晶を含む、請求項1に記載の半導体装置。
- 前記突起状金属電極は、電極、当該電極上に形成されたCu層、Cu層上に形成されたパラジウム層を含み、前記電子部品の第1および第2の電極には、Cuメッキが施され、前記金属結合は、Cu−パラジウムの共晶を含む、請求項1に記載の半導体装置。
- 前記突起状金属電極は、前記Cu層とパラジウム層との間にニッケル層を含む、請求項2または3に記載の半導体装置。
- 前記突起状金属電極は、半導体基板の表面上を絶縁膜を介して延在する配線層を含み、前記第1または第2の電極は、前記延在された配線層に金属結合される、請求項1に記載の半導体装置。
- 前記第1の電極は、第1の延在された配線層を介して第1の電極パッドに接続され、前記第2の電極は、第2の延在された配線層を介して第2の電極パッドに接続され、前記第1の電極から第1の電極パッドまでの第1の導電距離は、前記第2の電極から第2の電極パッドまでの第2の導電距離に等しい、請求項5に記載の半導体装置。
- 前記少なくとも1つの電子部品と半導体基板表面との間に空間が形成され、当該空間内にアンダーフィル樹脂が充填される、請求項1に記載の半導体装置。
- 複数の回路素子が形成された半導体基板と、
半導体基板上に形成され、かつ前記複数の回路素子の選択された素子と電気的に接続された複数の突起状金属電極であって、前記突起状金属電極は、電極、当該電極上に形成されたCu層、Cu層上に形成されたパラジウム層を含む、前記突起状金属電極と、
第1および第2の電極を有する少なくとも1つのキャパシタであって、前記電子部品の第1および第2の電極には金メッキが施され、前記第1および第2の電極が第1および第2の突起状金属電極に超音波熱圧着により金属結合され、前記半導体基板上に配された前記少なくとも1つのキャパシタと、
を有する半導体装置。 - 前記キャパシタの前記第1の電極は、電源電位に電気的に接続され、前記第2の電極は基準電位に電気的に接続される、請求項8に記載の半導体装置。
- 前記キャパシタと前記半導体基板との間にはアンダーフィル樹脂が充填される、請求項8に記載の半導体装置。
- 前記複数の突起状金属電極は、パラジウム層上にAuまたはCuからなるバンプ電極を含む、請求項1ないし10いずれか1つに記載の半導体装置。
- 前記複数の突起状金属電極は、前記回路素子が形成された活性領域上に配置される、請求項1ないし11いずれか1つに記載の半導体装置。
- 前記半導体基板は、他の半導体基板上に実装されている、請求項1ないし12いずれか1つに記載の半導体装置。
- 前記半導体基板は、樹脂封止される、請求項1ないし13いずれか1つに記載の半導体装置。
- 半導体チップ上に電子部品を実装する方法であって、
回路素子が形成された半導体基板を用意し、
半導体基板上に、回路素子と電気的に接続された電極、当該電極上に形成されたCu層、Cu層上に形成されたパラジウム層を含む複数の突起状金属電極を形成し、
電子部品を加熱した状態に保ち、当該電子部品の金メッキされた電極を前駆複数の突起状金属電極に押圧し、
電子部品に超音波振動を与え、
電子部品の電極を突起状金属電極に金属結合させる、
電子部品の実装方法。 - 電子部品が第1の荷重に達したとき超音波振動が開始され、電子部品が第2の荷重に達したとき超音波振動が終了される、請求項15に記載の実装方法。
- 電子部品の電極は、金―パラジウム共晶により突起状金属電極に結合される、請求項15に記載の実装方法。
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Cited By (2)
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---|---|---|---|---|
JP2015207757A (ja) * | 2014-04-09 | 2015-11-19 | ローム株式会社 | 半導体装置 |
JP2019134178A (ja) * | 2014-04-09 | 2019-08-08 | ローム株式会社 | 半導体装置 |
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US10056323B2 (en) | 2014-04-24 | 2018-08-21 | Renesas Electronics Corporation | Semiconductor device and method for manufacturing the same |
KR102627991B1 (ko) * | 2016-09-02 | 2024-01-24 | 삼성디스플레이 주식회사 | 반도체 칩, 이를 구비한 전자장치 및 반도체 칩의 연결방법 |
Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH0786491A (ja) * | 1993-09-17 | 1995-03-31 | Nec Corp | 半導体集積回路装置 |
JP2002184812A (ja) * | 2000-12-15 | 2002-06-28 | Murata Mfg Co Ltd | 電子部品装置 |
JP2002184933A (ja) * | 2000-12-15 | 2002-06-28 | Mitsubishi Electric Corp | 半導体装置 |
JP2007243229A (ja) * | 2007-06-25 | 2007-09-20 | Fujitsu Ltd | 半導体装置 |
Family Cites Families (29)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3900944A (en) * | 1973-12-19 | 1975-08-26 | Texas Instruments Inc | Method of contacting and connecting semiconductor devices in integrated circuits |
US4005472A (en) * | 1975-05-19 | 1977-01-25 | National Semiconductor Corporation | Method for gold plating of metallic layers on semiconductive devices |
US4184909A (en) * | 1978-08-21 | 1980-01-22 | International Business Machines Corporation | Method of forming thin film interconnection systems |
US4505029A (en) * | 1981-03-23 | 1985-03-19 | General Electric Company | Semiconductor device with built-up low resistance contact |
JPS61208869A (ja) * | 1985-03-14 | 1986-09-17 | Nec Corp | 半導体装置及びその製造方法 |
US4927505A (en) * | 1988-07-05 | 1990-05-22 | Motorola Inc. | Metallization scheme providing adhesion and barrier properties |
US4829024A (en) * | 1988-09-02 | 1989-05-09 | Motorola, Inc. | Method of forming layered polysilicon filled contact by doping sensitive endpoint etching |
JPH02231712A (ja) * | 1989-03-03 | 1990-09-13 | Mitsubishi Electric Corp | 半導体装置の製造方法 |
US5130275A (en) * | 1990-07-02 | 1992-07-14 | Digital Equipment Corp. | Post fabrication processing of semiconductor chips |
US5296407A (en) * | 1990-08-30 | 1994-03-22 | Seiko Epson Corporation | Method of manufacturing a contact structure for integrated circuits |
US5502397A (en) * | 1992-11-12 | 1996-03-26 | Advanced Micro Devices, Inc. | Integrated circuit testing apparatus and method |
US5569433A (en) * | 1994-11-08 | 1996-10-29 | Lucent Technologies Inc. | Lead-free low melting solder with improved mechanical properties |
US6245668B1 (en) * | 1998-09-18 | 2001-06-12 | International Business Machines Corporation | Sputtered tungsten diffusion barrier for improved interconnect robustness |
JP3979847B2 (ja) * | 2000-03-17 | 2007-09-19 | 株式会社荏原製作所 | めっき装置 |
SG95637A1 (en) * | 2001-03-15 | 2003-04-23 | Micron Technology Inc | Semiconductor/printed circuit board assembly, and computer system |
US7759803B2 (en) * | 2001-07-25 | 2010-07-20 | Rohm Co., Ltd. | Semiconductor device and method of manufacturing the same |
US6757152B2 (en) * | 2001-09-05 | 2004-06-29 | Avx Corporation | Cascade capacitor |
US6838009B2 (en) * | 2001-10-30 | 2005-01-04 | International Business Machines Corporation | Rework method for finishing metallurgy on chip carriers |
TWI245402B (en) * | 2002-01-07 | 2005-12-11 | Megic Corp | Rod soldering structure and manufacturing process thereof |
EP1367644A1 (en) * | 2002-05-29 | 2003-12-03 | STMicroelectronics S.r.l. | Semiconductor electronic device and method of manufacturing thereof |
JP2004128333A (ja) * | 2002-10-04 | 2004-04-22 | Shinko Electric Ind Co Ltd | 薄膜コンデンサ装置、その実装モジュール及び製造方法 |
WO2004050950A1 (ja) * | 2002-12-03 | 2004-06-17 | The Furukawa Electric Co., Ltd. | 電気電子部品用金属材料 |
US7271476B2 (en) * | 2003-08-28 | 2007-09-18 | Kyocera Corporation | Wiring substrate for mounting semiconductor components |
US7179738B2 (en) * | 2004-06-17 | 2007-02-20 | Texas Instruments Incorporated | Semiconductor assembly having substrate with electroplated contact pads |
US20070120270A1 (en) * | 2005-11-23 | 2007-05-31 | Kuroda Roger T | Flip chip hermetic seal using pre-formed material |
JP2008010552A (ja) * | 2006-06-28 | 2008-01-17 | Nec Electronics Corp | パワーアンプモジュール |
US8421227B2 (en) * | 2006-06-28 | 2013-04-16 | Megica Corporation | Semiconductor chip structure |
JP4734282B2 (ja) * | 2007-04-23 | 2011-07-27 | 株式会社日立製作所 | 半導体チップおよび半導体装置 |
KR100874588B1 (ko) * | 2007-09-05 | 2008-12-16 | 성균관대학교산학협력단 | 전기적 특성 평가가 가능한 플립칩 및 이것의 제조 방법 |
-
2008
- 2008-08-11 JP JP2008206669A patent/JP4811437B2/ja active Active
-
2009
- 2009-08-11 US US12/539,122 patent/US20100032802A1/en not_active Abandoned
Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH0786491A (ja) * | 1993-09-17 | 1995-03-31 | Nec Corp | 半導体集積回路装置 |
JP2002184812A (ja) * | 2000-12-15 | 2002-06-28 | Murata Mfg Co Ltd | 電子部品装置 |
JP2002184933A (ja) * | 2000-12-15 | 2002-06-28 | Mitsubishi Electric Corp | 半導体装置 |
JP2007243229A (ja) * | 2007-06-25 | 2007-09-20 | Fujitsu Ltd | 半導体装置 |
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2015207757A (ja) * | 2014-04-09 | 2015-11-19 | ローム株式会社 | 半導体装置 |
JP2019134178A (ja) * | 2014-04-09 | 2019-08-08 | ローム株式会社 | 半導体装置 |
JP2020129700A (ja) * | 2014-04-09 | 2020-08-27 | ローム株式会社 | 半導体装置 |
JP7022784B2 (ja) | 2014-04-09 | 2022-02-18 | ローム株式会社 | 半導体装置 |
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US20100032802A1 (en) | 2010-02-11 |
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