JP2009544169A - 新規な導体と誘電体組成物とを含む薄膜トランジスタ - Google Patents

新規な導体と誘電体組成物とを含む薄膜トランジスタ Download PDF

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Publication number
JP2009544169A
JP2009544169A JP2009520789A JP2009520789A JP2009544169A JP 2009544169 A JP2009544169 A JP 2009544169A JP 2009520789 A JP2009520789 A JP 2009520789A JP 2009520789 A JP2009520789 A JP 2009520789A JP 2009544169 A JP2009544169 A JP 2009544169A
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group
layer
film transistor
thin film
styrene
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Ceased
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JP2009520789A
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Japanese (ja)
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JP2009544169A5 (enExample
Inventor
リチャード・ケヴィン・ベイリー
グラシエラ・ベアトリス・ブランチェット
ジョン・ダブリュー・カトロン
リード・ジョン・チェスターフィールド
フェン・ガオ
ハワード・デイヴィッド・グリックスマン
マーク・ビー・ゴールドフィンガー
ゲアリー・デルマー・ジェイコックス
リンダ・ケイ・ジョンソン
ルーパン・レオン・クゥセイヤン
アイリーナ・マラジョヴィック
ホン・メン
ジェフリー・スコット・メス
ジェフリー・ヌーニシュ
ジェラード・オニール
ケネス・ジョージ・シャープ
ナンシー・ジー・タシ
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EIDP Inc
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EI Du Pont de Nemours and Co
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Publication of JP2009544169A publication Critical patent/JP2009544169A/ja
Publication of JP2009544169A5 publication Critical patent/JP2009544169A5/ja
Ceased legal-status Critical Current

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H10K71/10—Deposition of organic active material
    • H10K71/18—Deposition of organic active material using non-liquid printing techniques, e.g. thermal transfer printing from a donor sheet
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having potential barriers
    • H10K10/40—Organic transistors
    • H10K10/46—Field-effect transistors, e.g. organic thin-film transistors [OTFT]
    • H10K10/462—Insulated gate field-effect transistors [IGFETs]
    • H10K10/468—Insulated gate field-effect transistors [IGFETs] characterised by the gate dielectrics
    • H10K10/471—Insulated gate field-effect transistors [IGFETs] characterised by the gate dielectrics the gate dielectric comprising only organic materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having potential barriers
    • H10K10/40—Organic transistors
    • H10K10/46—Field-effect transistors, e.g. organic thin-film transistors [OTFT]
    • H10K10/462—Insulated gate field-effect transistors [IGFETs]
    • H10K10/464—Lateral top-gate IGFETs comprising only a single gate
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having potential barriers
    • H10K10/40—Organic transistors
    • H10K10/46—Field-effect transistors, e.g. organic thin-film transistors [OTFT]
    • H10K10/462—Insulated gate field-effect transistors [IGFETs]
    • H10K10/466—Lateral bottom-gate IGFETs comprising only a single gate
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having potential barriers
    • H10K10/40—Organic transistors
    • H10K10/46—Field-effect transistors, e.g. organic thin-film transistors [OTFT]
    • H10K10/462—Insulated gate field-effect transistors [IGFETs]
    • H10K10/481—Insulated gate field-effect transistors [IGFETs] characterised by the gate conductors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having potential barriers
    • H10K10/80—Constructional details
    • H10K10/82—Electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
    • H10K85/10—Organic polymers or oligomers
    • H10K85/111—Organic polymers or oligomers comprising aromatic, heteroaromatic, or aryl chains, e.g. polyaniline, polyphenylene or polyphenylene vinylene
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
    • H10K85/60—Organic compounds having low molecular weight
    • H10K85/615—Polycyclic condensed aromatic hydrocarbons, e.g. anthracene
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
    • H10K85/60—Organic compounds having low molecular weight
    • H10K85/649—Aromatic compounds comprising a hetero atom
    • H10K85/655—Aromatic compounds comprising a hetero atom comprising only sulfur as heteroatom

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  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Thin Film Transistor (AREA)
  • Organic Low-Molecular-Weight Compounds And Preparation Thereof (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Formation Of Insulating Films (AREA)
JP2009520789A 2006-07-17 2007-07-16 新規な導体と誘電体組成物とを含む薄膜トランジスタ Ceased JP2009544169A (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US11/488,200 US7528448B2 (en) 2006-07-17 2006-07-17 Thin film transistor comprising novel conductor and dielectric compositions
PCT/US2007/016119 WO2008010983A2 (en) 2006-07-17 2007-07-16 Thin film transistor comprising novel conductor and dielectric compositions

Publications (2)

Publication Number Publication Date
JP2009544169A true JP2009544169A (ja) 2009-12-10
JP2009544169A5 JP2009544169A5 (enExample) 2010-03-25

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JP2009520789A Ceased JP2009544169A (ja) 2006-07-17 2007-07-16 新規な導体と誘電体組成物とを含む薄膜トランジスタ

Country Status (5)

Country Link
US (2) US7528448B2 (enExample)
EP (3) EP2482354A1 (enExample)
JP (1) JP2009544169A (enExample)
CN (1) CN101490863A (enExample)
WO (1) WO2008010983A2 (enExample)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2008244022A (ja) * 2007-03-26 2008-10-09 Kyushu Univ 有機半導体素子およびその製造方法
JP2011100972A (ja) * 2009-11-03 2011-05-19 Internatl Business Mach Corp <Ibm> 高性能のカーボン・ナノ電子デバイスを製造するための有機バッファ層の利用
JP2013505898A (ja) * 2009-09-25 2013-02-21 北京大学 芳香族ボロン酸エステル化合物の調製方法
JP2016508893A (ja) * 2013-08-01 2016-03-24 エルジー・ケム・リミテッド ３次元構造の金属パターンの製造方法

Families Citing this family (38)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7528448B2 (en) * 2006-07-17 2009-05-05 E.I. Du Pont De Nemours And Company Thin film transistor comprising novel conductor and dielectric compositions
US7582403B2 (en) * 2006-07-17 2009-09-01 E. I. Du Pont De Nemours And Company Metal compositions, thermal imaging donors and patterned multilayer compositions derived therefrom
JP2010514667A (ja) * 2007-01-05 2010-05-06 トップ・ナノシス・インコーポレーテッド 炭素ナノチューブ分散剤、炭素ナノチューブ組成物、炭素ナノチューブフィルム及び炭素ナノチューブフィルムの製造方法
JP2008235880A (ja) * 2007-02-21 2008-10-02 Brother Ind Ltd 薄膜トランジスタ及び薄膜トランジスタの製造方法
KR101257851B1 (ko) * 2007-03-13 2013-04-24 삼성전자주식회사 디스플레용 박막 트랜지스터 및 그 제조 방법
TWI345671B (en) * 2007-08-10 2011-07-21 Au Optronics Corp Thin film transistor, pixel structure and liquid crystal display panel
US8445840B2 (en) 2007-09-07 2013-05-21 Bruker Biospin Corporation Imaging target for testing quality of multiple-magnification focus and image co-registration
US8039788B2 (en) * 2007-09-07 2011-10-18 Carestream Health, Inc. Imaging target for testing quality of multiple-magnification focus and image co-registration
GB2453766A (en) * 2007-10-18 2009-04-22 Novalia Ltd Method of fabricating an electronic device
JP5288826B2 (ja) * 2008-02-22 2013-09-11 三洋電機株式会社 有機半導体素子及びその製造方法
US7879678B2 (en) * 2008-02-28 2011-02-01 Versatilis Llc Methods of enhancing performance of field-effect transistors and field-effect transistors made thereby
CN101582381B (zh) * 2008-05-14 2011-01-26 鸿富锦精密工业（深圳）有限公司 薄膜晶体管及其阵列的制备方法
KR101468596B1 (ko) 2008-07-09 2014-12-05 삼성전자주식회사 자기 조립 유기겔에 기초한 유기 나노섬유 구조와 이를이용한 유기 나노섬유 트랜지스터 및 이들의 제조방법
GB2462591B (en) * 2008-08-05 2013-04-03 Cambridge Display Tech Ltd Organic thin film transistors and methods of making the same
US8154080B2 (en) * 2008-12-05 2012-04-10 Xerox Corporation Dielectric structure having lower-k and higher-k materials
JP2010168347A (ja) * 2008-12-22 2010-08-05 Semiconductor Energy Lab Co Ltd カルバゾール誘導体を製造する方法
US8330156B2 (en) * 2008-12-26 2012-12-11 Semiconductor Energy Laboratory Co., Ltd. Thin film transistor with a plurality of oxide clusters over the gate insulating layer
US8436350B2 (en) * 2009-01-30 2013-05-07 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device using an oxide semiconductor with a plurality of metal clusters
JP2013504186A (ja) * 2009-09-05 2013-02-04 メルク パテント ゲゼルシャフト ミット ベシュレンクテル ハフツング 有機電子装置用の溶液加工性パッシベーション層
US8304512B2 (en) * 2010-01-19 2012-11-06 Xerox Corporation Benzodithiophene based materials compositions
WO2011145814A2 (ko) * 2010-05-19 2011-11-24 경희대학교 산학협력단 박막 트랜지스터 및 그 제조 방법
JP5652005B2 (ja) * 2010-06-03 2015-01-14 ソニー株式会社 薄膜トランジスタおよびその製造方法、ならびに電子機器
DE102011009415A1 (de) * 2011-01-25 2012-07-26 Heraeus Precious Metals Gmbh & Co. Kg Sternförmige Verbindungen für organische Solarzellen
US8742403B2 (en) 2011-03-08 2014-06-03 Samsung Electronics Co., Ltd. Xanthene based semiconductor compositions
TWI538235B (zh) 2011-04-19 2016-06-11 弗里松股份有限公司 薄膜光伏打裝置及製造方法
CN102629077A (zh) * 2011-06-29 2012-08-08 北京京东方光电科技有限公司 树脂介电层及其材料的制备方法、液晶面板及显示器件
CN102654805B (zh) * 2011-08-03 2014-11-19 京东方科技集团股份有限公司 电子手写屏
US8692238B2 (en) 2012-04-25 2014-04-08 Eastman Kodak Company Semiconductor devices and methods of preparation
JP6482082B2 (ja) 2012-12-21 2019-03-13 フリソム アクツィエンゲゼルシャフトＦｌｉｓｏｍ Ａｇ カリウムを添加した薄膜光電子デバイスの製作
CN105705610B (zh) 2013-08-23 2018-01-30 巴斯夫欧洲公司 具有端杂芳基氰基亚乙烯基的化合物及其在有机太阳能电池中的应用
KR101555753B1 (ko) * 2013-11-18 2015-09-30 서울대학교산학협력단 단일 공정의 부식 방지된 구리 페이스트 제조와 다이폴 태그 안테나로의 응용
TWI677105B (zh) 2014-05-23 2019-11-11 瑞士商弗里松股份有限公司 製造薄膜光電子裝置之方法及可藉由該方法獲得的薄膜光電子裝置
WO2015191293A1 (en) 2014-06-11 2015-12-17 Eastman Kodak Company Devices having dielectric layers with thiosulfate-containing polymers
CN104076550A (zh) * 2014-06-17 2014-10-01 京东方科技集团股份有限公司 彩膜阵列基板、显示装置及彩膜阵列基板的制作方法
TWI661991B (zh) 2014-09-18 2019-06-11 瑞士商弗里松股份有限公司 用於製造薄膜裝置之自組裝圖案化
US10651324B2 (en) 2016-02-11 2020-05-12 Flisom Ag Self-assembly patterning for fabricating thin-film devices
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WO2025113770A1 (en) * 2023-11-27 2025-06-05 Yellow Dot D.O.O. A coating composition for forming a flexible dielectric coat with high dielectric permittivity

Citations (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2005004205A2 (en) * 2003-06-26 2005-01-13 E.I. Dupont De Nemours And Company Methods for forming patterns of a filled dielectric material on substrates
JP2005142527A (ja) * 2003-11-04 2005-06-02 Lucent Technol Inc 基体上の誘電体層とその作製方法
JP2005183889A (ja) * 2003-12-24 2005-07-07 Konica Minolta Holdings Inc 薄膜トランジスタシート及びその作製方法、それにより形成された薄膜トランジスタ素子
WO2005069401A1 (en) * 2004-01-16 2005-07-28 Cambridge University Technical Services Limited N-channel transistor
JP2006032916A (ja) * 2004-06-14 2006-02-02 Semiconductor Energy Lab Co Ltd 配線基板、及び半導体装置、並びにその作製方法
JP2006041105A (ja) * 2004-07-26 2006-02-09 Sharp Corp 太陽電池およびその製造方法
WO2006043072A1 (en) * 2004-10-20 2006-04-27 Dupont Teijin Films U.S. Limited Partnership Composite film suitable as a donor support in a radiation-induced thermal transfer imaging process
US20060124922A1 (en) * 2004-12-09 2006-06-15 Seong Hyun Kim Conductive ink, organic semiconductor transistor using the conductive ink, and method of fabricating the transistor

Family Cites Families (28)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4743091A (en) 1986-10-30 1988-05-10 Daniel Gelbart Two dimensional laser diode array
US5256506A (en) * 1990-10-04 1993-10-26 Graphics Technology International Inc. Ablation-transfer imaging/recording
US5264530A (en) * 1992-05-01 1993-11-23 E. I. Du Pont De Nemours And Company Process of polymerization in an aqueous system
US5370825A (en) * 1993-03-03 1994-12-06 International Business Machines Corporation Water-soluble electrically conducting polymers, their synthesis and use
US5567356A (en) * 1994-11-07 1996-10-22 Monsanto Company Emulsion-polymerization process and electrically-conductive polyaniline salts
TW516244B (en) * 1999-09-17 2003-01-01 Semiconductor Energy Lab EL display device and method for manufacturing the same
US6580094B1 (en) * 1999-10-29 2003-06-17 Semiconductor Energy Laboratory Co., Ltd. Electro luminescence display device
US6228555B1 (en) * 1999-12-28 2001-05-08 3M Innovative Properties Company Thermal mass transfer donor element
US6645681B2 (en) 2000-12-15 2003-11-11 E. I. Du Pont De Nemours And Company Color filter
US6958202B2 (en) * 2000-12-15 2005-10-25 E.I. Du Pont De Nemours And Company Donor element for adjusting the focus of an imaging laser
JP4244556B2 (ja) * 2001-03-30 2009-03-25 チッソ株式会社 ビス（トリフルオロメチル）フェニル環を持つ液晶性化合物、液晶組成物および液晶表示素子
US6875523B2 (en) 2001-07-05 2005-04-05 E. I. Du Pont De Nemours And Company Photoactive lanthanide complexes with phosphine oxides, phosphine oxide-sulfides, pyridine N-oxides, and phosphine oxide-pyridine N-oxides, and devices made with such complexes
MY131995A (en) * 2001-09-08 2007-09-28 Astrazeneca Ab Benzothiazepine and benzothiadiazepine derivatives with illeal bile acid transport (ibat) inhibitory activity for the treatment hyperlipidaemia
KR20040077655A (ko) 2001-10-19 2004-09-06 슈페리어 마이크로파우더스 엘엘씨 전자 형상 증착용 테잎 조성물
US7029945B2 (en) 2001-12-19 2006-04-18 Merck Patent Gmbh Organic field effect transistor with an organic dielectric
CN1639246A (zh) * 2002-03-01 2005-07-13 纳幕尔杜邦公司 包含添加剂的有机导电聚合物的印刷
WO2003099574A1 (en) 2002-05-17 2003-12-04 E.I. Du Pont De Nemours And Company Low molecular weight acrylic copolymer latexes for donor elements in the thermal printing of color filters
JP4606161B2 (ja) * 2002-05-21 2011-01-05 アムジエン・インコーポレーテツド 置換複素環式化合物および使用方法
EP1434281A3 (en) 2002-12-26 2007-10-24 Konica Minolta Holdings, Inc. Manufacturing method of thin-film transistor, thin-film transistor sheet, and electric circuit
JP2006524916A (ja) * 2003-03-27 2006-11-02 イー・アイ・デュポン・ドウ・ヌムール・アンド・カンパニー 感熱性材料を基材に転写するための方法およびドナー要素
JP2007502251A (ja) * 2003-08-15 2007-02-08 ユニヴェルシテ・ラヴァル ２位官能化及び２，７位二官能化カルバゾール類のモノマー類、オリゴマー類、及びポリマー類
JP2005223107A (ja) * 2004-02-05 2005-08-18 Hitachi Ltd 電界効果型トランジスタ及びその製造方法
WO2006024012A1 (en) 2004-08-23 2006-03-02 E.I. Dupont De Nemours And Company P-alkoxyphenylen-thiophene oligomers as organic semiconductors for use in electronic devices
US8026510B2 (en) * 2004-10-20 2011-09-27 Dai Nippon Printing Co., Ltd. Organic electronic device and method for producing the same
JP4148213B2 (ja) * 2004-10-21 2008-09-10 セイコーエプソン株式会社 パターン形成方法および機能性膜
US7355199B2 (en) 2004-11-02 2008-04-08 E.I. Du Pont De Nemours And Company Substituted anthracenes and electronic devices containing the substituted anthracenes
KR101347419B1 (ko) 2005-04-15 2014-02-06 이 아이 듀폰 디 네모아 앤드 캄파니 아릴-에틸렌 치환된 방향족 화합물 및 유기 반도체로서의 이의 용도
US7528448B2 (en) * 2006-07-17 2009-05-05 E.I. Du Pont De Nemours And Company Thin film transistor comprising novel conductor and dielectric compositions

Patent Citations (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2005004205A2 (en) * 2003-06-26 2005-01-13 E.I. Dupont De Nemours And Company Methods for forming patterns of a filled dielectric material on substrates
JP2005142527A (ja) * 2003-11-04 2005-06-02 Lucent Technol Inc 基体上の誘電体層とその作製方法
JP2005183889A (ja) * 2003-12-24 2005-07-07 Konica Minolta Holdings Inc 薄膜トランジスタシート及びその作製方法、それにより形成された薄膜トランジスタ素子
WO2005069401A1 (en) * 2004-01-16 2005-07-28 Cambridge University Technical Services Limited N-channel transistor
JP2006032916A (ja) * 2004-06-14 2006-02-02 Semiconductor Energy Lab Co Ltd 配線基板、及び半導体装置、並びにその作製方法
JP2006041105A (ja) * 2004-07-26 2006-02-09 Sharp Corp 太陽電池およびその製造方法
WO2006043072A1 (en) * 2004-10-20 2006-04-27 Dupont Teijin Films U.S. Limited Partnership Composite film suitable as a donor support in a radiation-induced thermal transfer imaging process
US20060124922A1 (en) * 2004-12-09 2006-06-15 Seong Hyun Kim Conductive ink, organic semiconductor transistor using the conductive ink, and method of fabricating the transistor

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2008244022A (ja) * 2007-03-26 2008-10-09 Kyushu Univ 有機半導体素子およびその製造方法
JP2013505898A (ja) * 2009-09-25 2013-02-21 北京大学 芳香族ボロン酸エステル化合物の調製方法
JP2011100972A (ja) * 2009-11-03 2011-05-19 Internatl Business Mach Corp <Ibm> 高性能のカーボン・ナノ電子デバイスを製造するための有機バッファ層の利用
JP2016508893A (ja) * 2013-08-01 2016-03-24 エルジー・ケム・リミテッド ３次元構造の金属パターンの製造方法
US10034385B2 (en) 2013-08-01 2018-07-24 Lg Chem, Ltd. Method of preparing metal pattern having 3D structure

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Publication number Publication date
US8053840B2 (en) 2011-11-08
US7528448B2 (en) 2009-05-05
EP2482355A1 (en) 2012-08-01
US20080012006A1 (en) 2008-01-17
WO2008010983A3 (en) 2008-09-12
EP2041816A2 (en) 2009-04-01
WO2008010983A2 (en) 2008-01-24
EP2482354A1 (en) 2012-08-01
US20090179198A1 (en) 2009-07-16
CN101490863A (zh) 2009-07-22

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