JP2009540537A - 金属間マイクロフレーク粒子による高処理能力の半導体前駆体層印刷 - Google Patents

金属間マイクロフレーク粒子による高処理能力の半導体前駆体層印刷 Download PDF

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Publication number
JP2009540537A
JP2009540537A JP2008556570A JP2008556570A JP2009540537A JP 2009540537 A JP2009540537 A JP 2009540537A JP 2008556570 A JP2008556570 A JP 2008556570A JP 2008556570 A JP2008556570 A JP 2008556570A JP 2009540537 A JP2009540537 A JP 2009540537A
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Japan
Prior art keywords
microflakes
particles
layer
group
precursor
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Pending
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JP2008556570A
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Japanese (ja)
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JP2009540537A5 (fr
Inventor
デューレン、イェルーン カー．イェー． ファン
アール． ロビンソン、マシュー
アール． レイドルム、クレイグ
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Van Duren Jeroen KJ
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Van Duren Jeroen KJ
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Priority claimed from US11/361,497 external-priority patent/US20070163638A1/en
Priority claimed from US11/361,498 external-priority patent/US20070163639A1/en
Priority claimed from US11/361,688 external-priority patent/US20070169812A1/en
Priority claimed from US11/361,521 external-priority patent/US20070163383A1/en
Priority claimed from US11/361,522 external-priority patent/US20070166453A1/en
Priority claimed from US11/362,266 external-priority patent/US20070169813A1/en
Priority claimed from US11/361,433 external-priority patent/US7700464B2/en
Priority claimed from US11/361,515 external-priority patent/US20070163640A1/en
Priority claimed from US11/394,849 external-priority patent/US20070163641A1/en
Priority claimed from US11/395,668 external-priority patent/US8309163B2/en
Priority claimed from US11/395,426 external-priority patent/US20070163642A1/en
Priority claimed from US11/395,438 external-priority patent/US20070163643A1/en
Application filed by Van Duren Jeroen KJ filed Critical Van Duren Jeroen KJ
Publication of JP2009540537A publication Critical patent/JP2009540537A/ja
Publication of JP2009540537A5 publication Critical patent/JP2009540537A5/ja
Pending legal-status Critical Current

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
    • H01L31/0256—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by the material
    • H01L31/0264—Inorganic materials
    • H01L31/032—Inorganic materials including, apart from doping materials or other impurities, only compounds not provided for in groups H01L31/0272 - H01L31/0312
    • H01L31/0322—Inorganic materials including, apart from doping materials or other impurities, only compounds not provided for in groups H01L31/0272 - H01L31/0312 comprising only AIBIIICVI chalcopyrite compounds, e.g. Cu In Se2, Cu Ga Se2, Cu In Ga Se2
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers
    • H01L31/072—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN heterojunction type
    • H01L31/0749—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN heterojunction type including a AIBIIICVI compound, e.g. CdS/CulnSe2 [CIS] heterojunction solar cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/541—CuInSe2 material PV cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product

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  • Engineering & Computer Science (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Electromagnetism (AREA)
  • General Physics & Mathematics (AREA)
  • Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Inorganic Chemistry (AREA)
  • Chemical & Material Sciences (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Sustainable Energy (AREA)
  • Manufacturing & Machinery (AREA)
  • Photovoltaic Devices (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
JP2008556570A 2006-02-23 2007-02-23 金属間マイクロフレーク粒子による高処理能力の半導体前駆体層印刷 Pending JP2009540537A (ja)

Applications Claiming Priority (14)

Application Number Priority Date Filing Date Title
US11/361,521 US20070163383A1 (en) 2004-02-19 2006-02-23 High-throughput printing of nanostructured semiconductor precursor layer
US11/361,433 US7700464B2 (en) 2004-02-19 2006-02-23 High-throughput printing of semiconductor precursor layer from nanoflake particles
US11/362,266 US20070169813A1 (en) 2004-02-19 2006-02-23 High-throughput printing of semiconductor precursor layer from microflake particles
US11/361,515 US20070163640A1 (en) 2004-02-19 2006-02-23 High-throughput printing of semiconductor precursor layer by use of chalcogen-rich chalcogenides
US11/361,688 US20070169812A1 (en) 2004-02-19 2006-02-23 High-throughput printing of semiconductor precursor layer from nanoflake particles
US11/361,497 US20070163638A1 (en) 2004-02-19 2006-02-23 Photovoltaic devices printed from nanostructured particles
US11/361,522 US20070166453A1 (en) 2004-02-19 2006-02-23 High-throughput printing of chalcogen layer
US11/361,498 US20070163639A1 (en) 2004-02-19 2006-02-23 High-throughput printing of semiconductor precursor layer from microflake particles
US39619906A 2006-03-30 2006-03-30
US11/394,849 US20070163641A1 (en) 2004-02-19 2006-03-30 High-throughput printing of semiconductor precursor layer from inter-metallic nanoflake particles
US11/395,668 US8309163B2 (en) 2004-02-19 2006-03-30 High-throughput printing of semiconductor precursor layer by use of chalcogen-containing vapor and inter-metallic material
US11/395,426 US20070163642A1 (en) 2004-02-19 2006-03-30 High-throughput printing of semiconductor precursor layer from inter-metallic microflake articles
US11/395,438 US20070163643A1 (en) 2004-02-19 2006-03-30 High-throughput printing of chalcogen layer and the use of an inter-metallic material
PCT/US2007/062763 WO2007101135A2 (fr) 2006-02-23 2007-02-23 impression à haut rendement de couche précurseur semi-conductrice à partir de particules de microflocons intermétalliques

Publications (2)

Publication Number Publication Date
JP2009540537A true JP2009540537A (ja) 2009-11-19
JP2009540537A5 JP2009540537A5 (fr) 2010-04-08

Family

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JP2008556570A Pending JP2009540537A (ja) 2006-02-23 2007-02-23 金属間マイクロフレーク粒子による高処理能力の半導体前駆体層印刷

Country Status (4)

Country Link
EP (1) EP1997149A2 (fr)
JP (1) JP2009540537A (fr)
CN (1) CN101438416B (fr)
WO (1) WO2007101135A2 (fr)

Cited By (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101826574A (zh) * 2010-02-10 2010-09-08 昆山正富机械工业有限公司 非真空制作铜铟镓硒光吸收层的方法
CN101840957A (zh) * 2010-02-11 2010-09-22 昆山正富机械工业有限公司 非真空制作铜铟镓硒浆料的调配方法
JP2011138837A (ja) * 2009-12-26 2011-07-14 Kyocera Corp 半導体層の製造方法および光電変換装置の製造方法
JP2011176204A (ja) * 2010-02-25 2011-09-08 Kyocera Corp 半導体層の製造方法および光電変換装置の製造方法
WO2011162865A2 (fr) * 2010-06-23 2011-12-29 Applied Materials, Inc. Couche de promotion de nucléation formée sur un substrat afin d'augmenter le dépôt d'une couche conductrice transparente
JP2012009546A (ja) * 2010-06-23 2012-01-12 Hitachi Ltd 薄膜製造方法、薄膜付基板および薄膜製造装置
JP2013062449A (ja) * 2011-09-15 2013-04-04 Honda Motor Co Ltd カルコパイライト型太陽電池の製造方法
JP2013545316A (ja) * 2010-12-03 2013-12-19 イー・アイ・デュポン・ドウ・ヌムール・アンド・カンパニー 硫化／セレン化銅インジウムガリウムコーティングおよび膜を製造するための分子前駆体および方法
JP2014207477A (ja) * 2007-10-05 2014-10-30 サン−ゴバン グラス フランス 基板及びそれを用いた集光能力のある素子
JP2015509288A (ja) * 2012-01-19 2015-03-26 ヌボサン，インコーポレイテッド 光電池用保護コーティング

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US8322300B2 (en) * 2008-02-07 2012-12-04 Sunpower Corporation Edge coating apparatus with movable roller applicator for solar cell substrates
JP5317648B2 (ja) * 2008-11-26 2013-10-16 京セラ株式会社 薄膜太陽電池の製法
JP5383162B2 (ja) * 2008-11-26 2014-01-08 京セラ株式会社 薄膜太陽電池の製法
JP5137794B2 (ja) * 2008-11-26 2013-02-06 京セラ株式会社 薄膜太陽電池の製法
JP2010129648A (ja) * 2008-11-26 2010-06-10 Kyocera Corp 薄膜太陽電池の製法
CN101931011A (zh) * 2009-06-26 2010-12-29 安泰科技股份有限公司 薄膜太阳能电池及其基带和制备方法
CN101853885A (zh) * 2010-02-10 2010-10-06 昆山正富机械工业有限公司 太阳能吸收层浆料的制造方法、该浆料及吸收层
CN101820032A (zh) * 2010-02-11 2010-09-01 昆山正富机械工业有限公司 一种非真空环境下配置铜铟镓硒浆料制作光吸收层的方法
CN101840958A (zh) * 2010-02-11 2010-09-22 昆山正富机械工业有限公司 一种非真空制作铜铟镓硒浆料的方法
CN102464912A (zh) * 2010-11-19 2012-05-23 慧濠光电科技股份有限公司 具有光吸收功能的纳米晶粒的油墨及其制作方法
JP5764016B2 (ja) * 2011-09-07 2015-08-12 日東電工株式会社 Ｃｉｇｓ膜の製法およびそれを用いるｃｉｇｓ太陽電池の製法
DE102012214254A1 (de) * 2012-08-10 2014-05-22 Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. Laserbasiertes Verfahren und Bearbeitungstisch zur lokalen Kontaktierung eines Halbleiterbauelements
CN104051569B (zh) * 2013-03-12 2017-09-26 台湾积体电路制造股份有限公司 薄膜太阳能电池及其制造方法
KR101638470B1 (ko) 2013-07-19 2016-07-11 주식회사 엘지화학 금속 나노 입자를 포함하는 광흡수층 제조용 잉크 조성물 및 이를 사용한 박막의 제조 방법
CN110240830B (zh) * 2018-03-09 2022-10-18 国家纳米科学中心 基于液态金属颗粒的自烧结导电墨水、其制备方法及应用

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US20040219730A1 (en) * 2001-04-16 2004-11-04 Basol Bulent M. Method of forming semiconductor compound film for fabrication of electronic device and film produced by same

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US5383995A (en) * 1979-12-28 1995-01-24 Flex Products, Inc. Method of making optical thin flakes and inks incorporating the same
US5028274A (en) * 1989-06-07 1991-07-02 International Solar Electric Technology, Inc. Group I-III-VI2 semiconductor films for solar cell application
US6013122A (en) * 1998-08-18 2000-01-11 Option Technologies, Inc. Tattoo inks
US7537955B2 (en) * 2001-04-16 2009-05-26 Basol Bulent M Low temperature nano particle preparation and deposition for phase-controlled compound film formation

Patent Citations (1)

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Publication number Priority date Publication date Assignee Title
US20040219730A1 (en) * 2001-04-16 2004-11-04 Basol Bulent M. Method of forming semiconductor compound film for fabrication of electronic device and film produced by same

Cited By (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2014207477A (ja) * 2007-10-05 2014-10-30 サン−ゴバン グラス フランス 基板及びそれを用いた集光能力のある素子
JP2011138837A (ja) * 2009-12-26 2011-07-14 Kyocera Corp 半導体層の製造方法および光電変換装置の製造方法
CN101826574A (zh) * 2010-02-10 2010-09-08 昆山正富机械工业有限公司 非真空制作铜铟镓硒光吸收层的方法
CN101840957A (zh) * 2010-02-11 2010-09-22 昆山正富机械工业有限公司 非真空制作铜铟镓硒浆料的调配方法
JP2011176204A (ja) * 2010-02-25 2011-09-08 Kyocera Corp 半導体層の製造方法および光電変換装置の製造方法
WO2011162865A2 (fr) * 2010-06-23 2011-12-29 Applied Materials, Inc. Couche de promotion de nucléation formée sur un substrat afin d'augmenter le dépôt d'une couche conductrice transparente
JP2012009546A (ja) * 2010-06-23 2012-01-12 Hitachi Ltd 薄膜製造方法、薄膜付基板および薄膜製造装置
WO2011162865A3 (fr) * 2010-06-23 2012-02-16 Applied Materials, Inc. Couche de promotion de nucléation formée sur un substrat afin d'augmenter le dépôt d'une couche conductrice transparente
JP2013545316A (ja) * 2010-12-03 2013-12-19 イー・アイ・デュポン・ドウ・ヌムール・アンド・カンパニー 硫化／セレン化銅インジウムガリウムコーティングおよび膜を製造するための分子前駆体および方法
JP2013062449A (ja) * 2011-09-15 2013-04-04 Honda Motor Co Ltd カルコパイライト型太陽電池の製造方法
JP2015509288A (ja) * 2012-01-19 2015-03-26 ヌボサン，インコーポレイテッド 光電池用保護コーティング

Also Published As

Publication number Publication date
CN101438416A (zh) 2009-05-20
WO2007101135A3 (fr) 2008-02-07
CN101438416B (zh) 2011-11-23
WO2007101135A2 (fr) 2007-09-07
EP1997149A2 (fr) 2008-12-03

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