JP2014207477A - 基板及びそれを用いた集光能力のある素子 - Google Patents
基板及びそれを用いた集光能力のある素子 Download PDFInfo
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- JP2014207477A JP2014207477A JP2014138789A JP2014138789A JP2014207477A JP 2014207477 A JP2014207477 A JP 2014207477A JP 2014138789 A JP2014138789 A JP 2014138789A JP 2014138789 A JP2014138789 A JP 2014138789A JP 2014207477 A JP2014207477 A JP 2014207477A
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- substrate
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- barrier layer
- alkali metal
- silicon nitride
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- 229910052951 chalcopyrite Inorganic materials 0.000 claims abstract description 14
- 239000000463 material Substances 0.000 claims abstract description 9
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- 229910052783 alkali metal Inorganic materials 0.000 claims description 24
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- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 18
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- 238000001228 spectrum Methods 0.000 description 2
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- 238000000862 absorption spectrum Methods 0.000 description 1
- 229910052787 antimony Inorganic materials 0.000 description 1
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- 239000005361 soda-lime glass Substances 0.000 description 1
- 150000003385 sodium Chemical class 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 239000011593 sulfur Substances 0.000 description 1
- 238000010301 surface-oxidation reaction Methods 0.000 description 1
- 229920001169 thermoplastic Polymers 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- XOLBLPGZBRYERU-UHFFFAOYSA-N tin dioxide Chemical compound O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 description 1
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- 238000002834 transmittance Methods 0.000 description 1
- 229910052725 zinc Inorganic materials 0.000 description 1
- 239000011701 zinc Substances 0.000 description 1
Images
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- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/036—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes
- H01L31/0392—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes including thin films deposited on metallic or insulating substrates ; characterised by specific substrate materials or substrate features or by the presence of intermediate layers, e.g. barrier layers, on the substrate
- H01L31/03923—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes including thin films deposited on metallic or insulating substrates ; characterised by specific substrate materials or substrate features or by the presence of intermediate layers, e.g. barrier layers, on the substrate including AIBIIICVI compound materials, e.g. CIS, CIGS
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- Chemical & Material Sciences (AREA)
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- Life Sciences & Earth Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- General Chemical & Material Sciences (AREA)
- Geochemistry & Mineralogy (AREA)
- Materials Engineering (AREA)
- Organic Chemistry (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Physics & Mathematics (AREA)
- Crystallography & Structural Chemistry (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
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Abstract
Description
− 基板が、第1の主要面の少なくとも一部の面の上に、少なくとも1層のアルカリ金属バリヤー層を有する。;
− バリヤー層が、誘電体をベースとする。;
− 誘電体が、ケイ素の窒化物、酸化物もしくはオキシナイトライド、またはアルミニウムの窒化物、酸化物もしくはオキシナイトライドをベースとし、単独もしくは混合物として使用される。;
− バリヤー層の厚みは、3nmと200nmとの間であり、好ましくは、20nmと100nmとの間であり、実質的に50nm近傍である。;
− バリヤー層が窒化ケイ素をベースとする。;
− 窒化ケイ素をベースとする層が準化学量論的(substoichiometric)である。;および
− 窒化ケイ素をベースとする層が超化学量論的(superstoichiometric)である。
− ガラス機能を有する第1の基板とガラス機能を有する第2の基板とを含む集光能力のある素子であって、前記第1の基板および前記第2の基板が2層の電極形成伝導層の間に、光エネルギーを電気エネルギーに変換するためのカルコパイライト吸収剤材料をベースとした、少なくとも1層の機能層を挟み、前記第1の基板および前記第2の基板のうちの少なくとも一方がアルカリ金属をベースとし、その主要面の一方の面の上に少なくとも1層のアルカリ金属バリヤー層を有することを特徴とする。;
− バリヤー層でコーティングされていない、基板の主要面の少なくとも一部の面がモリブデンベースの伝導層を含む。;
− アルカリ金属バリヤー層が伝導層と基板の主要面との間に挟まれている。;
− アルカリ金属バリヤー層が誘電体をベースとする。;
− 誘電体が、ケイ素の窒化物、酸化物もしくはオキシナイトライド、またはアルミニウムの窒化物、酸化物もしくはオキシナイトライドをベースとし、単独でもしくは混合物として使用される。;および
− バリヤー層の厚みが、3nmと200nmとの間、好ましくは20nmと100nmとの間、実質的に50nm近傍である。
Claims (18)
- ガラス機能を有し、アルカリ金属を含有し、カルコパイライトタイプの吸収材料ベースの層と接合されることが意図された第1の主要面および第2の主要面を含む基板(1,1’)であって、
前記第2の主要面の少なくとも一部の面の上に、少なくとも1層の窒化ケイ素ベースのアルカリ金属バリヤー層(9)を有することを特徴とする基板。 - 前記第1の主要面少なくとも一部の面の上に少なくとも1層のアルカリ金属バリヤー層(9’)を有することを特徴とする請求項1に記載の基板。
- 前記バリヤー層(9’)が誘電体をベースとすることを特徴とする請求項1または2に記載の基板。
- 前記誘電体が、ケイ素の窒化物、酸化物もしくはオキシナイトライド、またはアルミニウムの窒化物、酸化物もしくはオキシナイトライドをベースとし、単独若しくは混合物として使用されることを特徴とする請求項3に記載の基板。
- 窒化ケイ素をベースとした前記層が準化学量論的であることを特徴とする請求項1または3に記載の基板。
- 窒化ケイ素をベースとした前記層が超化学量論的であることを特徴とする請求項1または3に記載の基板。
- 前記バリヤー層の厚みが、3nmと200nmとの間、好ましくは20nmと100nmとの間、実質的に50nm近傍であることを特徴とする請求項1乃至6のいずれか1項に記載の基板。
- 少なくとも1枚の、請求項1乃至7のいずれか1項に記載の基板を使用する集光能力のある素子。
- ガラス機能を有する第1の基板(1)およびガラス機能を有する第2の基板(1’)を含み、前記第1の基板および前記第2の基板が、光エネルギーを電気エネルギーに変換するためのカルコパイライトタイプの吸収剤材料をベースとする、少なくとも1層の機能層(3)を2層の電極形成伝導層(2,6)の間に挟み込む集光能力のある素子であって、
前記第1の基板および第2の基板(1,1’)のうちの少なくとも一方が、アルカリ金属をベースとし、その主要面のうちの一方の上に少なくとも1層のアルカリ金属バリヤー層(9,9’)を有することを特徴とする請求項8に記載の集光能力のある素子。 - 前記基板(1’)の、前記バリヤー層(9)でコーティングされていない前記主要面の少なくとも一部の面がモリブデンベースの伝導層(2)を含むことを特徴とする請求項9に記載の素子。
- アルカリ金属バリヤー層(9’)が前記伝導層(2)と前記基板(1’)の主張面との間に設けられていることを特徴とする請求項9または10に記載の素子。
- 前記アルカリ金属バリヤー層が誘電体をベースとすることを特徴とする請求項9乃至11のいずれか1項に記載の素子。
- 前記誘電体が、ケイ素の窒化物、酸化物もしくはオキシナイトライド、またはアルミニウムの窒化物、酸化物もしくはオキシナイトライドをベースとし、単独もしくは混合物として使用されることを特徴とする請求項9乃至12のいずれか1項に記載の素子。
- 前記バリヤー層の厚みが、3nmと200nmとの間、好ましくは20nmと100nmとの間、そして実質的に50nm近傍であることを特徴とする請求項9乃至13のいずれか1項に記載の素子。
- 前記バリヤー層が窒化ケイ素をベースとすることを特徴とする請求項9に記載の素子。
- 窒化ケイ素をベースとした前記層が準化学量論的であることを特徴とする請求項15に記載の素子。
- 窒化ケイ素をベースとした前記層が超化学量論的であることを特徴とする請求項15に記載の素子。
- 前記バリヤー層(9,9’)および電気伝導層(2)または第2のバリヤー層(9,9’)が「スパッタアップ」および「スパッタダウン」のマグネトロンスパッタリングプロセスを使用して堆積されることを特徴とする請求項9に記載された素子に使用される基板を製造する方法。
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EP2455976A2 (fr) | 2012-05-23 |
PL2455976T3 (pl) | 2014-01-31 |
EP2208235A2 (fr) | 2010-07-21 |
US20110005587A1 (en) | 2011-01-13 |
WO2009044064A2 (fr) | 2009-04-09 |
CN102057496A (zh) | 2011-05-11 |
EP2455976B1 (fr) | 2013-08-21 |
CN104124293A (zh) | 2014-10-29 |
FR2922046B1 (fr) | 2011-06-24 |
PT2208235E (pt) | 2012-07-24 |
ES2385856T3 (es) | 2012-08-01 |
EP2445013A2 (fr) | 2012-04-25 |
PT2455976E (pt) | 2013-11-25 |
ES2432516T3 (es) | 2013-12-04 |
FR2922046A1 (fr) | 2009-04-10 |
JP2010541272A (ja) | 2010-12-24 |
WO2009044064A4 (fr) | 2010-03-11 |
JP5869626B2 (ja) | 2016-02-24 |
ATE554503T1 (de) | 2012-05-15 |
EP2455976A3 (fr) | 2012-06-27 |
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