CN104124293A - 对于能收集光元件的改进 - Google Patents

对于能收集光元件的改进 Download PDF

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CN104124293A
CN104124293A CN201410411010.4A CN201410411010A CN104124293A CN 104124293 A CN104124293 A CN 104124293A CN 201410411010 A CN201410411010 A CN 201410411010A CN 104124293 A CN104124293 A CN 104124293A
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base material
layer
barrier layer
molybdenum
interarea
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S.奥夫雷
N.詹克
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Saint Gobain Glass France SAS
Compagnie de Saint Gobain SA
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Abstract

具有玻璃功能的含碱金属的基材(1)包含用于与由吸收性材料特别是黄铜矿类型层连接的第一主面，和第二主面，其特征在于，在第二主面的至少一部分表面上含有至少一个碱金属阻挡层(9)。

Description

对于能收集光元件的改进
本申请是以下申请的分案申请：申请日2008年9月8日,申请号200880109995.8，发明名称“对于能收集光元件的改进”。
本发明涉及到对能收集光的元件提供的改进，或更一般地对所有的电子设备（如基于半导电材料的太阳能电池）提供的改进。
众所周知，具有多个薄层的光伏太阳能电池类型的能收集光的元件含有一个吸收剂层，至少一个安置在光线入射侧的基于金属材料的电极，以及基于金属材料的背电极，该背电极可以相对较厚并且不透明。它应该基本上具有尽可能低的表面电阻和对吸收层的优良粘合性以及必要时对基材的良好粘合性的特征。
其能够起吸收剂作用的黄铜矿三元化合物一般包含铜、铟和硒。这就是所谓的吸收剂层CISe2。还可以向吸收剂层添加镓(如：Cu(In,Ga)Se2或者CuGaSe2)，铝(如：Cu(In,Al)Se2)，或者硫(如：CuIn(Se,S))。它一般以及下文中用术语黄铜矿吸收剂层表示。
在黄铜矿吸收剂系列(filière)范围内，背电极大多数时候基于钼进行制备。
然而这个系列的高性能可以仅通过对吸收剂层的晶体生长以及它的化学组成的严格控制来达到。
此外，众所周知在所有的贡献因素中，在钼层上存在的钠(Na)是一个有利于黄铜矿吸收剂结晶的关键参数。它以受控制量存在能够减小吸收剂缺陷密度和增大其电导率。
含碱金属的具有玻璃功能的基材(一般基于硅钠钙玻璃)自然地形成一个钠储存器。在吸收剂层的制备方法(一般在高温进行实施)的影响下，碱金属会迁移通过基材，从基于钼的背电极，朝向吸收剂层(特别是黄铜矿类型层)迁移。在热退火作用下，钼层任由钠从基材朝向上活性层自由扩散。尽管如此，该钼层具有仅可以部分和不很精确的控制在Mo/CIGSe2界面迁移的钠量的缺点。
根据一种变型实施方案，在高温下，将吸收剂层沉积在基于钼的层上，它借助于基于硅的氮化物、氧化物或氮氧化物，或者铝的氧化物或氮氧化物的阻挡层的帮助下与基材分隔。这个阻挡层能够阻止钠向沉积在钼表面上的上活性层的扩散，该钠来自在基材内部的扩散。
虽然向制备方法增加了附加步骤，这个后面的解决方案提供了通过使用外部源(如:NaF, Na2O2, Na2Se) 非常精确定量沉积在的钼层上的钠量的可能性。
基于钼的电极的制备方法是一个连续方法，它意味着，如此覆盖的基材在随后用于再加工方法(procédé en reprise)之前以堆叠形式存储在托架上，在该再加工方法中基于吸收性材料的层将被沉积在钼电极表面上。
在托架上的基材的储存阶段中，钼层因此面向相对玻璃基材。这个富含钠的面可能污染钼面并且钠随时间而富集。在再加工中的钼沉积阶段期间，这种非控制掺杂机制能够导致制备方法的偏差。
因而本发明目标为通过提出其钠扩散是受控的具有玻璃功能的基材来克服这些缺陷。
为此，具有玻璃功能的含碱金属的基材包含用于与基于吸收材料的黄铜矿类型的层连接的第一主面，和第二主面，其特征在于，在第二主面的至少一部分表面上含有至少一个碱金属阻挡层。
在本发明的优选的实施方案里，任选地还可以另外使用下列布置的一种和/或者另一种:
- 在第一主面的至少一部分表面上含有至少一个碱金属阻挡层。　
- 阻挡层是基于电介质材料的，
- 电介质材料是基于硅的氮化物、氧化物或氮氧化物、或者铝的氮化物、氧化物或氮氧化物，它们单独或者混合使用，
- 阻挡层厚度是在3nm到200nm之间，优选地20nm到100nm之间，并几乎接近50nm，
- 阻挡层是基于氮化硅的。　
- 基于氮化硅的层是亚化学计量的(sous-stoechiométrique)。　
- 基于氮化硅的层是过化学计量的(sur-stoechiométrique)。
根据本发明的另一个方面，它也同样涉及使用至少一个如先前描述的基材的能收集光的元件。
在本发明的优选实施方案里，任选地可另外使用下列布置的一种和/或者另一种:
- 能收集光的元件，其含有具有玻璃功能的第一基材和含有玻璃功能的第二基材，所述基材在两个形成电极的导电层之间夹入至少一个能把光能转换为电能的基于黄铜矿吸收剂材料的功能层，其特征在于基材中的至少一个是基于碱金属的并在它的主面之一上含有至少一个碱金属阻挡层。　
- 在没有覆盖有阻挡层的基材的主面的至少一部分表面含有基于钼的导电层，
- 在导电层和基材的主面之间插入碱金属阻挡层，
- 碱金属阻挡层是基于电介质材料的，
- 电介质材料是基于硅的氮化物、氧化物或氮氧化物、或者铝的氮化物、氧化物或氮氧化物的，它们单独或者混合使用，
- 阻挡层厚度为3nm到200nm之间，优选地为20nm到100nm之间，并几乎接近50nm。
根据本发明的另一方面，它也涉及如先前描述的基材的制备方法，其特征在于阻挡层和导电层或者第二阻挡层借助于“上”和“下”磁控管溅射方法进行沉积。
本发明的其它特征、细节、优点通过阅读下面通过参照附图进行说明而非限定性的说明书更好地显示出来：
- 图1是依照发明的能收集光的元件的示意图，
- 图2是依照第一实施方案的基材的示意图，其中阻挡层沉积在所述基材的锡面上，
- 图3是依照第二实施方案的基材的示意图，其中阻挡层沉积在所述基材的空气面上，在玻璃和导电层之间的界面处。　
- 图4是显示根据阻挡层的不同厚度在功能层内氧和钠的含量变化的曲线。
在图1上，它表示一个能收集光的元件(太阳能电池或光伏电池)。
有玻璃功能的透明基材1可以例如是完全由如硅钠钙玻璃的含碱金属的玻璃制成。它同样可能由热塑性聚合物制成，例如聚氨酯或聚碳酸酯或聚甲基丙烯酸甲酯。
质量的基本部分(就是说至少98质量%)，甚至具有玻璃功能的基材整体由具有尽可能较好透明度的材料构成，该材料优选地在有用于所述应用(太阳能电池组件)的光谱部分内(一般来说在380nm到1200nm的光谱)，具有小于0.01mm-1的线吸收。
当本发明的基材1用作由各种黄铜矿技术(CIS，CIGS, CIGSe2…)制成的光伏电池的防护板时或者作为用于接收功能叠层的整体的支撑基材1'时，依据本发明的基材1总体厚度可以为0.5到10mm。当基材1用作防护板时，可以是有利的是，当该板是由玻璃制成时，使该板经受热处理的板(如淬火类型)。
常规地，用A定义朝向光线的基材前面(这是外面)，和用B定义朝向太阳能电池组件的其余层的基材背面(这是内表面)。
基材1'的B面覆盖有应当作为电极的第一导电层2。在这个电极2上沉积基于黄铜矿吸收剂的功能层3。当它是基于例如CIS，CIGS，或者CIGSe2的功能层3时，优选地在功能层3和电极2之间的界面是基于钼的。符合这些要求的导电层被描述在欧洲专利申请EP1356528中。
黄铜矿吸收剂层3覆盖有可以跟黄铜矿层3产生pn结的硫化镉(CdS)薄层4。实际上，黄铜矿剂一般进行n掺杂，CdS层4进行p掺杂，这就能够产生建立电流所需要的pn结。
该硫化镉薄层4本身覆盖有一般由本征氧化锌(ZnO:i)构成的底漆层5。
为了形成第二电极，ZnO:i层5覆盖有TCO(透明导电氧化物)层6。其可以从以下材料中选择：掺杂的锡氧化物，特别是用氟或者锑掺杂的锡氧化物(在CVD沉积的情况下可使用的前体可以是锡的有机金属化合物或卤化物，它们与氢氟酸型或三氟乙酸类型的氟前体结合)，掺杂的锌氧化物，特别是用铝掺杂的锌氧化物(在CVD沉积的情况下可使用的前体可以是锌和铝的有机金属化合物或者卤化物)，或者掺杂的铟氧化物，特别是掺杂锡的铟氧化物(在CVD沉积的情况下可使用的前体可以是锡和铟的有机金属化合物或者卤化物)。这个导电层应当尽可能透明，并且在对应于构成功能层的材料的吸收光谱的全部波长内具有高的光透射，以不会白白地减小太阳能电池组件效率。
我们发现在功能层3和n掺杂的导电层(如由CdS制成)之间的电介性氧化锌(ZnO:i)的相对薄(例如100nm)的层5正面影响功能层的沉积方法的稳定性。
导电层6具有最大为30欧姆/平方(ohms/carré)，尤其最大为20欧姆/平方，优选地最大为10或者15欧姆/平方的方块电阻(résistance par carré)。它一般是在5到12欧姆/平方之间。
薄层叠层7通过叠片插入层8(例如由PU、PVB或者EVA制成)被夹入在两个基材1和1'之间。基材1'与基材1不同在于它必须是基于碱金属的玻璃(如硅钠钙玻璃)制成(原因已经在本发明的开头部分解释过)，以适应太阳能电池或光伏电池，随后其借助于密封垫圈或密封树脂进行外围封装。这种树脂的组成和其使用方式描述在申请EP739042中。
根据本发明的有利特征(图2所示)，考虑在基材1'的全部或部分表面(如在锡面位置)上进行沉积碱金属阻挡层9，所述表面不与导电层2，尤其是基于钼的导电层相接触。这个碱金属阻挡层9是基于电介质材料，而这种电介质材料基于硅的氮化物、氧化物或氮氧化物、或者铝的氮化物、氧化物或氮氧化物，它们单独使用或混合使用。阻挡层9的厚度是在3到200nm之间，优选地在20到100nm之间，并几乎接近50nm。
这种碱金属阻挡层，例如基于氮化硅的阻挡层，可以不是化学计量的。它可以具有亚化学计量性质，甚至并优选地是过化学计量性质。例如这种层是SixNy层，其具有至少0.76的x/y比率，比率优选为0.80到0.90，因为已经证明当SixNy富含Si时碱金属阻挡效果更加有效。
基材1'背面上的这种阻挡层的存在，当它与相对的玻璃面接触时，能够避免在储存阶段(介于生产和使用之间)期间污染基于钼的导电层2。同样也提供了简单的方法以阻止由退火/硒化步骤引起的玻璃背面的钠的排出机制，在上述步骤期间生产机架(batis)有被污染的风险，由此导致制造方法的偏离。
根据一个实施方案变型(图3所示)，考虑在基于碱金属的基材1'与基于钼的导电层2之间插入一个类似于前面的碱金属阻挡层9'。仍然地，它可由硅的氮化物、氧化物或氮氧化物、或者铝的氧化物或氮氧化物组成。它可阻止Na从玻璃朝向沉积在钼上的上活性层扩散。虽然使该制造过程增加额外步骤，这种后面的解决方案通过借助于外部源(如：NaF，Na2O2，Na2Se)对沉积在钼层上的钠量非常精确地定量提供了可能。阻挡层厚度是在3到200nm之间，优选地20到100nm之间，且几乎接近50nm。
位于基材1'背面(一般是基材的锡面侧)的阻挡层9通过上溅射或下溅射类型的磁控溅射方法在沉积基于钼的叠层之前或之后进行沉积。在例如专利申请EP1179516中给出了实现方法的实例。阻挡层也同样可能通过CVD方法如PE-CVD(等离子增强化学气相沉积)方法沉积进行沉积。
在所有可能的组合中，最简单的解决方案是单步方法，全部层在同一涂覆装置中进行沉积。
在这种情况下，基于电介质(如基于氮化硅)的阻挡层通过上溅射(sputter up))类型磁控溅射或“从上方的溅射(pulvérisation par le haut)”沉积在背面上，然而基于导电材料如钼的层和/或者另一个位于玻璃界面(空气面(face air))的用电介质材料制成的阻挡层9'和导电层2(例如基于钼)随后通过下溅射类型磁控溅射或者“从上方的溅射(pulvérisation par le haut)”加到空气面上。
另一个解决方案在于使用分开的两步方法，其中全部层的通过下溅射类型磁控溅射进行沉积。在这种情况下，为了避免钼层的任何污染，优选地预先在背面 (即基材的锡面)上沉积阻挡层。在两个沉积步骤之间，基材堆叠体(pile)应当进行处理以便被翻转。
不论是哪种制造方法，通过参考图4，注意到无阻挡层(特别是氮化硅阻挡层)，氧含量和钠含量分别是使用150nm氮化硅层的氧含量和钠含量的20倍和5倍。同样也注意到50nm氮化硅的厚度能够显著减少钠扩散(因子大约15)但是对于氧扩散的不透过性是有限的(因子大约2)。为了有效阻止玻璃的钠或氧朝向外部迁移，因此看到150nm的氮化硅层极好地实现该功能。这种层的应用在存储期间对于避免污染相对面(表面氧化或钠的富集)尤其有意义。
这类型的层对于在组件制作过程中避免容易与钠起化学反应的硒化过程的偏差是有意义的。
如前所述的太阳能电池模块，为了能够运行并向电力分配网释放电压，一方面其装配有电连接设备，另一方面装配有保证其相对于光学定向的支撑体和固定装置工具。

Claims (11)

1.具有玻璃功能的含碱金属的基材(1，1')，其包含用于与基于黄铜矿类型的吸收性材料的层连接的第一主面，和第二主面，基材（1'）的第一主面的至少一部分表面含有基于钼的导电层(2)，碱金属阻挡层不插入在钼基导电层(2)和基材（1'）的第一主面之间，特征在于其在第二主面的至少一部分表面上，具有至少一个碱金属阻挡层(9)。
2.根据权利要求1所述的基材，其特征在于，阻挡层(9)是基于电介质材料的。
3.根据权利要求2所述的基材，其特征在于，电介质材料是基于硅的氮化物、氧化物或氮氧化物，或者铝的氮化物、氧化物或氮氧化物的，它们单独使用或混合使用。
4.根据前述权利要求任一项所述的基材，其特征在于碱金属阻挡层(9)基于氮化硅。
5.根据权利要求4所述的基材，其特征在于，基于氮化硅的层(9)是亚化学计量的。
6.根据权利要求4所述的基材，其特征在于，基于氮化硅的层(9)是过化学计量的。
7.根据前述权利要求中之一项所述的基材，其特征在于，阻挡层(9)的厚度是在3到200nm之间，优选地在20到100nm之间，且基本接近50nm。
8.基材堆叠体，所述基材是根据前述权利要求任一项所述的，第一基材(1')的基于钼的导电层(2)与所述的至少一个由第二基材(1')的第二主面支承的碱金属阻挡层（9）接触。
9.能收集光的元件，其使用至少一个根据权利要求1-7中任一项的基材。
10.根据权利要求9所述的能收集光的元件，其包含具有玻璃功能的第一基材(1)和具有玻璃功能的第二基材(1')，所述基材在两个形成电极的导电层(2，6)之间夹入至少一个用于将光能转换为电能的基于黄铜矿类型的吸收性材料的功能层(3)，其特征在于，基材(1,1')之一是根据权利要求1-7中任一项的。
11.用于制备在根据权利要求10所述的元件中使用的基材的方法，其特征在于，阻挡层(9)和基于钼的导电层(2)使用“上”和“下”磁控管溅射方法进行沉积。
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Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8134069B2 (en) 2009-04-13 2012-03-13 Miasole Method and apparatus for controllable sodium delivery for thin film photovoltaic materials
US7785921B1 (en) * 2009-04-13 2010-08-31 Miasole Barrier for doped molybdenum targets
FR2949773B1 (fr) 2009-09-10 2016-01-01 Univ Toulouse 3 Paul Sabatier Materiau solide a l'etat divise, procede de fabrication d'un tel materiau et utilisation d'un tel materiau dans une cellule photovoltaique.
US20110067998A1 (en) * 2009-09-20 2011-03-24 Miasole Method of making an electrically conductive cadmium sulfide sputtering target for photovoltaic manufacturing
DE102010017246A1 (de) * 2010-06-04 2011-12-08 Solibro Gmbh Solarzellenmodul und Herstellungsverfahren hierfür
US10043921B1 (en) 2011-12-21 2018-08-07 Beijing Apollo Ding Rong Solar Technology Co., Ltd. Photovoltaic cell with high efficiency cigs absorber layer with low minority carrier lifetime and method of making thereof
CN102544138A (zh) * 2012-02-08 2012-07-04 南开大学 一种设置AlN薄膜层的铜铟镓硒薄膜太阳电池
KR102328677B1 (ko) * 2014-10-17 2021-11-19 삼성디스플레이 주식회사 플렉서블 디스플레이 장치 및 그 제조방법

Family Cites Families (25)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4667214A (en) * 1983-06-24 1987-05-19 Canon Kabushiki Kaisha Photosensor
US5252140A (en) * 1987-07-24 1993-10-12 Shigeyoshi Kobayashi Solar cell substrate and process for its production
EP0393034B1 (en) * 1987-07-24 1994-02-02 AMORPHOUS SILICON, Inc. Solar cell substrate and process for its production
AU616736B2 (en) * 1988-03-03 1991-11-07 Asahi Glass Company Limited Amorphous oxide film and article having such film thereon
US5252139A (en) * 1991-02-21 1993-10-12 Solems S.A. Photovoltaic thin layers panel structure
DE4442824C1 (de) * 1994-12-01 1996-01-25 Siemens Ag Solarzelle mit Chalkopyrit-Absorberschicht
DE19514908C1 (de) 1995-04-22 1996-04-18 Ver Glaswerke Gmbh Verfahren zur Herstellung eines Solarmoduls
US5628688A (en) * 1995-12-27 1997-05-13 Dana Corporation Slip yoke assembly for vehicle driveshaft
US6274805B1 (en) * 1997-05-07 2001-08-14 Asahi Kasei Kabushiki Kaisha Solar cell and manufacturing method thereof
EP1964821B2 (en) 1998-12-21 2012-11-07 Cardinal CG Company Soil-resistant coating for glass surfaces
JP2001007342A (ja) * 1999-04-20 2001-01-12 Semiconductor Energy Lab Co Ltd 半導体装置およびその作製方法
DE10017610C2 (de) * 2000-03-30 2002-10-31 Hahn Meitner Inst Berlin Gmbh Verfahren zur Herstellung eines Solarmoduls mit integriert serienverschalteten Dünnschicht-Solarzellen und Verwendung davon
FR2810118B1 (fr) * 2000-06-07 2005-01-21 Saint Gobain Vitrage Substrat transparent comportant un revetement antireflet
FR2820241B1 (fr) * 2001-01-31 2003-09-19 Saint Gobain Substrat transparent muni d'une electrode
US7732229B2 (en) * 2004-09-18 2010-06-08 Nanosolar, Inc. Formation of solar cells with conductive barrier layers and foil substrates
JP2006165386A (ja) * 2004-12-09 2006-06-22 Showa Shell Sekiyu Kk Ｃｉｓ系薄膜太陽電池及びその作製方法
JP2007055861A (ja) * 2005-08-25 2007-03-08 Nippon Sheet Glass Co Ltd 色素増感太陽電池用導電膜付き車載用ガラスの曲げ成形方法及び色素増感太陽電池用導電膜付き車載用ガラス
US8153282B2 (en) * 2005-11-22 2012-04-10 Guardian Industries Corp. Solar cell with antireflective coating with graded layer including mixture of titanium oxide and silicon oxide
US20070193621A1 (en) * 2005-12-21 2007-08-23 Konarka Technologies, Inc. Photovoltaic cells
US8389852B2 (en) * 2006-02-22 2013-03-05 Guardian Industries Corp. Electrode structure for use in electronic device and method of making same
JP2009540537A (ja) * 2006-02-23 2009-11-19 デューレン、イェルーン カー．イェー． ファン 金属間マイクロフレーク粒子による高処理能力の半導体前駆体層印刷
US20070295390A1 (en) * 2006-05-05 2007-12-27 Nanosolar, Inc. Individually encapsulated solar cells and solar cell strings having a substantially inorganic protective layer
US7985919B1 (en) * 2006-08-18 2011-07-26 Nanosolar, Inc. Thermal management for photovoltaic devices
US20090032098A1 (en) * 2007-08-03 2009-02-05 Guardian Industries Corp. Photovoltaic device having multilayer antireflective layer supported by front substrate
US7842534B2 (en) * 2008-04-02 2010-11-30 Sunlight Photonics Inc. Method for forming a compound semi-conductor thin-film

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Application publication date: 20141029