JP2009539245A - マイクロチャネル・アバランシェ・フォトダイオード(変形物) - Google Patents
マイクロチャネル・アバランシェ・フォトダイオード(変形物) Download PDFInfo
- Publication number
- JP2009539245A JP2009539245A JP2009513088A JP2009513088A JP2009539245A JP 2009539245 A JP2009539245 A JP 2009539245A JP 2009513088 A JP2009513088 A JP 2009513088A JP 2009513088 A JP2009513088 A JP 2009513088A JP 2009539245 A JP2009539245 A JP 2009539245A
- Authority
- JP
- Japan
- Prior art keywords
- avalanche
- semiconductor
- region
- substrate
- semiconductor layer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000004065 semiconductor Substances 0.000 claims abstract description 66
- 239000000758 substrate Substances 0.000 claims abstract description 26
- 239000007787 solid Substances 0.000 claims abstract description 14
- 239000011159 matrix material Substances 0.000 claims abstract description 7
- 239000000463 material Substances 0.000 claims description 7
- 239000007769 metal material Substances 0.000 claims description 2
- 230000003321 amplification Effects 0.000 abstract description 12
- 238000003199 nucleic acid amplification method Methods 0.000 abstract description 12
- 238000000034 method Methods 0.000 abstract description 11
- 230000035945 sensitivity Effects 0.000 abstract description 9
- 230000015572 biosynthetic process Effects 0.000 abstract description 5
- 230000005684 electric field Effects 0.000 abstract description 4
- 230000003595 spectral effect Effects 0.000 abstract description 4
- 239000002800 charge carrier Substances 0.000 abstract description 3
- 238000009825 accumulation Methods 0.000 abstract description 2
- 238000002474 experimental method Methods 0.000 abstract description 2
- 238000012544 monitoring process Methods 0.000 abstract description 2
- 230000005658 nuclear physics Effects 0.000 abstract description 2
- 239000002245 particle Substances 0.000 abstract description 2
- 230000005855 radiation Effects 0.000 abstract description 2
- 238000003325 tomography Methods 0.000 abstract description 2
- 230000003287 optical effect Effects 0.000 abstract 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 4
- 229910052710 silicon Inorganic materials 0.000 description 4
- 239000010703 silicon Substances 0.000 description 4
- 229910052732 germanium Inorganic materials 0.000 description 3
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 3
- 150000002500 ions Chemical class 0.000 description 3
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 2
- 229910052719 titanium Inorganic materials 0.000 description 2
- 239000010936 titanium Substances 0.000 description 2
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 1
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- 238000000137 annealing Methods 0.000 description 1
- 125000004429 atom Chemical group 0.000 description 1
- 229910052796 boron Inorganic materials 0.000 description 1
- 239000000969 carrier Substances 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 230000007812 deficiency Effects 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 238000000407 epitaxy Methods 0.000 description 1
- 238000002513 implantation Methods 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 230000007935 neutral effect Effects 0.000 description 1
- 125000004437 phosphorous atom Chemical group 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 239000011574 phosphorus Substances 0.000 description 1
- 229920002120 photoresistant polymer Polymers 0.000 description 1
- 238000005036 potential barrier Methods 0.000 description 1
- 239000002210 silicon-based material Substances 0.000 description 1
- 150000003608 titanium Chemical class 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
- H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by potential barriers, e.g. phototransistors
- H01L31/101—Devices sensitive to infrared, visible or ultraviolet radiation
- H01L31/102—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier
- H01L31/107—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier the potential barrier working in avalanche mode, e.g. avalanche photodiodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
- H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by potential barriers, e.g. phototransistors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/0352—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions
Landscapes
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Light Receiving Elements (AREA)
Abstract
【解決手段】本発明のマイクロチャネル・アバランシェ・ダイオードは、半導体感光性デバイスに属し、具体的には、信号の内部増幅利得を有する半導体アバランシェ・ダイオードに属する。提案されるマイクロチャネル・アバランシェ・ダイオードは、個々の光子、並びに、医療用ガンマ・トモグラフィ、放射線モニタリング及び核物理学実験用のデバイス内のガンマ量子及び荷電粒子に至るまでを含む、極微弱光パルスの記録に使用することができる。
提案されるデバイス特有の特徴は、基板と、それら自体の間及び基板との間の両方で共通界面を有する種々の電子物理特性を有する半導体層と、を含むアバランシェ・フォトダイオードにおいて、電位のマイクロホールの生成のための高導電率を有する小島である分離したソリッドステート領域の少なくとも1つの2次元マトリックスが形成されることである。体積内の生成電流を削減し、そしてデバイスの表面に沿った電位分布の均一性を改善するために、ソリッドステート領域が、それらが共通界面を有する半導体層に対して高導電率を有する2つの付加的な半導体層の間に配置される。結果として、光電子が分離したソリッドステート領域に向って集積し、そこで対応するマイクロホール内における次の蓄積を伴う電荷キャリアのアバランシェ増幅が行われることを確実にするような電位分布形状がデバイスの体積内に形成される。マイクロホール内に蓄積された電荷は、アバランシェ領域内の電界を低下させ、アバランシェ・プロセスの自消性をもたらす。次に、マイクロホール内の十分な漏れのために、電荷キャリアはコンタクトに流れる。
このように、光電子の増幅は、アバランシェ・プロセスの後の自消性を有する独立した増倍チャネル内で起こる。そのために、アバランシェ・フォトダイオードの光応答の振幅の安定性が改善され、感度が向上する。
【選択図】図1
Description
2:第1の付加的半導体層
3:シリコン半導体層
4:ソリッドステート領域
5:第2の付加的半導体層
6、7:方向
Claims (4)
- 基板と、それら自体の間及び前記基板との間の両方で共通界面を有する種々の電気物理特性を有する半導体層と、
を含み、
デバイス内に、1つの同じ型の導電率を有する半導体材料によって囲まれた高導電率を有する分離したソリッドステート領域からなる少なくとも1つのマトリックスが存在し、
前記ソリッドステート領域は2つの付加的な半導体層の間に配置され、それらが共通界面を有する前記半導体層と比較してより高い導電率を有する、
ことを特徴とする、アバランシェ・フォトダイオード。 - 前記ソリッドステート領域は、それらを囲む前記半導体層と同じ材料から作成され、しかしそれらに対して反対の導電率型を有することを特徴とする、請求項1に記載のアバランシェ・フォトダイオード。
- 前記ソリッドステート領域は、それらが共通界面を有する前記半導体層に対して狭い禁制領域を有する半導体から作成されることを特徴とする、請求項1に記載のアバランシェ・フォトダイオード。
- 前記ソリッドステート領域は、金属材料から作成されることを特徴とする、請求項1に記載のアバランシェ・フォトダイオード。
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
RU2006118960/28A RU2316848C1 (ru) | 2006-06-01 | 2006-06-01 | Микроканальный лавинный фотодиод |
RU2006118960 | 2006-06-01 | ||
PCT/RU2007/000287 WO2007139451A1 (fr) | 2006-06-01 | 2007-05-31 | Photodiode avalanche à microcanaux |
Related Child Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2013034806A Division JP5666636B2 (ja) | 2006-06-01 | 2013-02-25 | マイクロチャネル・アバランシェ・フォトダイオード |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2009539245A true JP2009539245A (ja) | 2009-11-12 |
JP5320610B2 JP5320610B2 (ja) | 2013-10-23 |
Family
ID=38778871
Family Applications (2)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2009513088A Expired - Fee Related JP5320610B2 (ja) | 2006-06-01 | 2007-05-31 | マイクロチャネル・アバランシェ・フォトダイオード(変形物) |
JP2013034806A Expired - Fee Related JP5666636B2 (ja) | 2006-06-01 | 2013-02-25 | マイクロチャネル・アバランシェ・フォトダイオード |
Family Applications After (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2013034806A Expired - Fee Related JP5666636B2 (ja) | 2006-06-01 | 2013-02-25 | マイクロチャネル・アバランシェ・フォトダイオード |
Country Status (8)
Country | Link |
---|---|
EP (1) | EP2026386A4 (ja) |
JP (2) | JP5320610B2 (ja) |
KR (1) | KR101301897B1 (ja) |
CN (1) | CN101675532B (ja) |
AU (1) | AU2007268338A1 (ja) |
CA (1) | CA2654034C (ja) |
RU (1) | RU2316848C1 (ja) |
WO (1) | WO2007139451A1 (ja) |
Families Citing this family (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
RU2528107C1 (ru) * | 2013-04-16 | 2014-09-10 | Зираддин Ягуб оглы Садыгов | Полупроводниковый лавинный детектор |
RU2731665C1 (ru) * | 2019-03-12 | 2020-09-07 | Общество С Ограниченной Ответственностью "Детектор Фотонный Аналоговый" (Ооо "Дефан") | Лавинный фотодетектор (варианты) и способ его изготовления (варианты) |
Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2001007381A (ja) * | 1999-06-24 | 2001-01-12 | Nippon Hoso Kyokai <Nhk> | 光電変換膜とその作製方法 |
JP2002203986A (ja) * | 2000-12-19 | 2002-07-19 | Korea Electronics Telecommun | アバランシェ光検出器 |
JP2002252367A (ja) * | 2001-02-23 | 2002-09-06 | Nippon Hoso Kyokai <Nhk> | 高感度光電変換装置 |
JP2003051608A (ja) * | 2001-08-07 | 2003-02-21 | Nippon Hoso Kyokai <Nhk> | 光電変換膜作製方法、光電変換膜作製装置及び撮像素子 |
JP2004104085A (ja) * | 2002-09-05 | 2004-04-02 | Korea Electronics Telecommun | アバランシェフォトトランジスタ |
JP2004200308A (ja) * | 2002-12-17 | 2004-07-15 | Nippon Hoso Kyokai <Nhk> | 光電変換膜の作製方法および固体撮像素子 |
Family Cites Families (13)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US771207A (en) | 1897-11-19 | 1904-09-27 | Gisbert Kapp | Apparatus for registering the supply of electricity. |
JPH077844B2 (ja) * | 1981-11-30 | 1995-01-30 | 財団法人半導体研究振興会 | 静電誘導型半導体光電変換装置 |
US4700209A (en) * | 1985-10-30 | 1987-10-13 | Rca Inc. | Avalanche photodiode and a method of making same |
JPS63122285A (ja) * | 1986-11-12 | 1988-05-26 | Tokuzo Sukegawa | 半導体受光素子用材料 |
SU1702831A1 (ru) | 1989-10-11 | 1997-06-27 | Институт ядерных исследований АН СССР | Лавинный фотоприемник |
JPH0774385A (ja) * | 1993-09-03 | 1995-03-17 | Hamamatsu Photonics Kk | 静電誘導型アバランシェフォトダイオード |
RU2105388C1 (ru) * | 1996-04-10 | 1998-02-20 | Виктор Михайлович Горловин | Лавинный фотоприемник |
RU2102821C1 (ru) * | 1996-10-10 | 1998-01-20 | Зираддин Ягуб-оглы Садыгов | Лавинный фотодиод |
US5844291A (en) * | 1996-12-20 | 1998-12-01 | Board Of Regents, The University Of Texas System | Wide wavelength range high efficiency avalanche light detector with negative feedback |
RU2142175C1 (ru) * | 1998-09-18 | 1999-11-27 | Общество с ограниченной ответственностью "Центр перспективных технологий и аппаратуры" | Лавинный фотоприемник |
JP2001077400A (ja) * | 1999-08-31 | 2001-03-23 | Tokai Rika Co Ltd | 半導体フォトデバイス |
RU2294035C2 (ru) * | 2005-03-24 | 2007-02-20 | Зираддин Ягуб-оглы Садыгов | Лавинный фотодиод |
JP5401203B2 (ja) * | 2009-08-07 | 2014-01-29 | 株式会社日立製作所 | 半導体受光装置及びその製造方法 |
-
2006
- 2006-06-01 RU RU2006118960/28A patent/RU2316848C1/ru active
-
2007
- 2007-05-31 AU AU2007268338A patent/AU2007268338A1/en not_active Abandoned
- 2007-05-31 WO PCT/RU2007/000287 patent/WO2007139451A1/ru active Application Filing
- 2007-05-31 EP EP07794024.5A patent/EP2026386A4/en not_active Withdrawn
- 2007-05-31 CA CA2654034A patent/CA2654034C/en active Active
- 2007-05-31 KR KR1020087032265A patent/KR101301897B1/ko active IP Right Grant
- 2007-05-31 CN CN2007800249205A patent/CN101675532B/zh not_active Expired - Fee Related
- 2007-05-31 JP JP2009513088A patent/JP5320610B2/ja not_active Expired - Fee Related
-
2013
- 2013-02-25 JP JP2013034806A patent/JP5666636B2/ja not_active Expired - Fee Related
Patent Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2001007381A (ja) * | 1999-06-24 | 2001-01-12 | Nippon Hoso Kyokai <Nhk> | 光電変換膜とその作製方法 |
JP2002203986A (ja) * | 2000-12-19 | 2002-07-19 | Korea Electronics Telecommun | アバランシェ光検出器 |
JP2002252367A (ja) * | 2001-02-23 | 2002-09-06 | Nippon Hoso Kyokai <Nhk> | 高感度光電変換装置 |
JP2003051608A (ja) * | 2001-08-07 | 2003-02-21 | Nippon Hoso Kyokai <Nhk> | 光電変換膜作製方法、光電変換膜作製装置及び撮像素子 |
JP2004104085A (ja) * | 2002-09-05 | 2004-04-02 | Korea Electronics Telecommun | アバランシェフォトトランジスタ |
JP2004200308A (ja) * | 2002-12-17 | 2004-07-15 | Nippon Hoso Kyokai <Nhk> | 光電変換膜の作製方法および固体撮像素子 |
Also Published As
Publication number | Publication date |
---|---|
KR101301897B1 (ko) | 2013-08-29 |
AU2007268338A1 (en) | 2007-12-06 |
EP2026386A4 (en) | 2013-07-31 |
CN101675532B (zh) | 2012-11-14 |
EP2026386A1 (en) | 2009-02-18 |
JP5666636B2 (ja) | 2015-02-12 |
WO2007139451A1 (fr) | 2007-12-06 |
RU2316848C1 (ru) | 2008-02-10 |
CA2654034A1 (en) | 2007-12-06 |
CA2654034C (en) | 2016-08-09 |
JP5320610B2 (ja) | 2013-10-23 |
CN101675532A (zh) | 2010-03-17 |
KR20100093143A (ko) | 2010-08-25 |
JP2013138240A (ja) | 2013-07-11 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
US10872995B2 (en) | Avalanche diode along with vertical PN junction and method for manufacturing the same field | |
US8476730B2 (en) | Geiger-mode photodiode with integrated and JFET-effect-adjustable quenching resistor, photodiode array, and corresponding manufacturing method | |
US9105789B2 (en) | Geiger-mode avalanche photodiode with high signal-to-noise ratio, and corresponding manufacturing process | |
JP2007521657A (ja) | 超薄型裏面照射フォトダイオード・アレイの構造と製造方法 | |
CN109713075B (zh) | 雪崩二极管和制造雪崩二极管的方法 | |
JPH0656898B2 (ja) | 半導体装置 | |
US9257588B2 (en) | Microchannel avalanche photodiode (variants) | |
US10290760B2 (en) | Process of manufacturing an avalanche diode | |
US20160247847A1 (en) | Semiconductor device, imaging apparatus, and method of manufacturing semiconductor device | |
JP5666636B2 (ja) | マイクロチャネル・アバランシェ・フォトダイオード | |
US8766339B2 (en) | Highly efficient CMOS technology compatible silicon photoelectric multiplier | |
US10608040B2 (en) | Photodetection device which has an inter-diode array and is overdoped by metal diffusion and manufacturing method | |
RU2383968C2 (ru) | Интегральная би-моп ячейка детектора излучений | |
AU2013260752B2 (en) | Microchannel avalanche photodiode | |
US9105788B2 (en) | Silicon photoelectric multiplier | |
RU2770147C1 (ru) | Микропиксельный лавинный фотодиод | |
JP2016039265A (ja) | 光検出素子 | |
CN117832315A (zh) | 一种cmos apd器件及其制备方法 | |
TW202249297A (zh) | 光感測裝置 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
A621 | Written request for application examination |
Free format text: JAPANESE INTERMEDIATE CODE: A621 Effective date: 20100531 |
|
A711 | Notification of change in applicant |
Free format text: JAPANESE INTERMEDIATE CODE: A711 Effective date: 20100702 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A821 Effective date: 20100702 |
|
A977 | Report on retrieval |
Free format text: JAPANESE INTERMEDIATE CODE: A971007 Effective date: 20120912 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20120924 |
|
A601 | Written request for extension of time |
Free format text: JAPANESE INTERMEDIATE CODE: A601 Effective date: 20121221 |
|
A602 | Written permission of extension of time |
Free format text: JAPANESE INTERMEDIATE CODE: A602 Effective date: 20130104 |
|
A601 | Written request for extension of time |
Free format text: JAPANESE INTERMEDIATE CODE: A601 Effective date: 20130124 |
|
A602 | Written permission of extension of time |
Free format text: JAPANESE INTERMEDIATE CODE: A602 Effective date: 20130131 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20130225 |
|
TRDD | Decision of grant or rejection written | ||
A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 Effective date: 20130624 |
|
A61 | First payment of annual fees (during grant procedure) |
Free format text: JAPANESE INTERMEDIATE CODE: A61 Effective date: 20130625 |
|
R150 | Certificate of patent or registration of utility model |
Ref document number: 5320610 Country of ref document: JP Free format text: JAPANESE INTERMEDIATE CODE: R150 Free format text: JAPANESE INTERMEDIATE CODE: R150 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
LAPS | Cancellation because of no payment of annual fees |