JP2013138240A - マイクロチャネル・アバランシェ・フォトダイオード - Google Patents
マイクロチャネル・アバランシェ・フォトダイオード Download PDFInfo
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- JP2013138240A JP2013138240A JP2013034806A JP2013034806A JP2013138240A JP 2013138240 A JP2013138240 A JP 2013138240A JP 2013034806 A JP2013034806 A JP 2013034806A JP 2013034806 A JP2013034806 A JP 2013034806A JP 2013138240 A JP2013138240 A JP 2013138240A
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- semiconductor layer
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- avalanche photodiode
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- 239000004065 semiconductor Substances 0.000 claims abstract description 81
- 239000000758 substrate Substances 0.000 claims abstract description 27
- 239000007787 solid Substances 0.000 claims abstract description 21
- 239000011159 matrix material Substances 0.000 claims abstract description 9
- 239000000463 material Substances 0.000 claims description 8
- 230000035945 sensitivity Effects 0.000 abstract description 8
- 230000003595 spectral effect Effects 0.000 abstract description 4
- 230000000704 physical effect Effects 0.000 abstract 1
- 230000003321 amplification Effects 0.000 description 9
- 238000000034 method Methods 0.000 description 9
- 238000003199 nucleic acid amplification method Methods 0.000 description 9
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 4
- 230000015572 biosynthetic process Effects 0.000 description 4
- 229910052710 silicon Inorganic materials 0.000 description 4
- 239000010703 silicon Substances 0.000 description 4
- 230000005684 electric field Effects 0.000 description 3
- 229910052732 germanium Inorganic materials 0.000 description 3
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 3
- 150000002500 ions Chemical class 0.000 description 3
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 2
- 239000007769 metal material Substances 0.000 description 2
- 239000010936 titanium Substances 0.000 description 2
- 229910052719 titanium Inorganic materials 0.000 description 2
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 1
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- 238000009825 accumulation Methods 0.000 description 1
- 238000000137 annealing Methods 0.000 description 1
- 125000004429 atom Chemical group 0.000 description 1
- 229910052796 boron Inorganic materials 0.000 description 1
- 239000000969 carrier Substances 0.000 description 1
- 239000002800 charge carrier Substances 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 230000007812 deficiency Effects 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 238000000407 epitaxy Methods 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 238000002513 implantation Methods 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 238000012544 monitoring process Methods 0.000 description 1
- 230000007935 neutral effect Effects 0.000 description 1
- 230000005658 nuclear physics Effects 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 125000004437 phosphorous atom Chemical group 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 239000011574 phosphorus Substances 0.000 description 1
- 229920002120 photoresistant polymer Polymers 0.000 description 1
- 238000005036 potential barrier Methods 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 239000002210 silicon-based material Substances 0.000 description 1
- 150000003608 titanium Chemical class 0.000 description 1
- 238000003325 tomography Methods 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
- H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by potential barriers, e.g. phototransistors
- H01L31/101—Devices sensitive to infrared, visible or ultraviolet radiation
- H01L31/102—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier
- H01L31/107—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier the potential barrier working in avalanche mode, e.g. avalanche photodiodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
- H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by potential barriers, e.g. phototransistors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/0352—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions
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- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Light Receiving Elements (AREA)
Abstract
【解決手段】基板1と、それら自体の間及び基板1との間の両方で接合界面を有する種々の電子物理特性を有する半導体層2,3,4と、を含むアバランシェ・フォトダイオードにおいて、電位のマイクロホールの生成のための高導電率を有する小島である分離した固体の領域4の少なくとも1つの2次元マトリックスが形成されることである。体積内の生成電流を削減し、そしてデバイスの表面に沿った電位分布の均一性を改善するために、固体の領域4が、それらが接合界面を有する半導体層に対して高導電率を有する2つの付加的な半導体層2,4の間に配置される。
【選択図】図1
Description
〔請求項1〕
基板と、それら自体の間及び前記基板との間の両方で共通の界面を有する種々の電気物理特性を有する半導体層と、
を含み、
デバイス内に、1つの同じ型の導電率を有する半導体材料によって囲まれた高導電率を有する分離した固体の領域からなる少なくとも1つのマトリックスが存在し、
前記固体の領域は2つの付加的な半導体層の間に配置され、それらが共通界面を有する前記半導体層と比較してより高い導電率を有する、
ことを特徴とする、アバランシェ・フォトダイオード。
〔請求項2〕
前記固体の領域は、それらを囲む前記半導体層と同じ材料から作成され、しかしそれらに対して反対の導電率型を有することを特徴とする、請求項1に記載のアバランシェ・フォトダイオード。
〔請求項3〕
前記固体の領域は、それらが共通の界面を有する前記半導体層に対して狭い禁制領域を有する半導体から作成されることを特徴とする、請求項1に記載のアバランシェ・フォトダイオード。
〔請求項4〕
前記固体の領域は、金属材料から作成されることを特徴とする、請求項1に記載のアバランシェ・フォトダイオード。
2:第1の付加的半導体層
3:シリコン半導体層
4:固体の領域
5:第2の付加的半導体層
6、7:方向
Claims (1)
- 基板と、複数の半導体層とから成るアバランシェ・フォトダイオードであって、
前記複数の半導体層が、前記基板と接合界面を形成する第1の付加的な半導体層と、少なくとも2つの低導電率半導体層であって、それぞれの低導電率半導体層の間及び前記第1の付加的な半導体層との間で接合界面を形成する少なくとも2つの低導電率半導体層と、前記低導電率半導体層の一つとの間で接合界面を形成する第2の付加的な半導体層とを、一貫して位置して、有し、
前記低導電率半導体層が第1の付加的な半導体層及び第2の付加的な半導体層の両方と比較して、より低い導電率を有しており、
前記アバランシェ・フォトダイオードにおける前記低導電率半導体層が、前記低導電率半導体層の材料によって完全に囲まれた分離した固体の領域からなる少なくとも1つのマトリックを含み、
前記分離した固体の領域が接合界面を形成する前記低導電率半導体層と比較して、より高い導電率を有する、ことを特徴とするアバランシェ・フォトダイオード。
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
RU2006118960/28A RU2316848C1 (ru) | 2006-06-01 | 2006-06-01 | Микроканальный лавинный фотодиод |
RU2006118960 | 2006-06-01 |
Related Parent Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2009513088A Division JP5320610B2 (ja) | 2006-06-01 | 2007-05-31 | マイクロチャネル・アバランシェ・フォトダイオード(変形物) |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2013138240A true JP2013138240A (ja) | 2013-07-11 |
JP5666636B2 JP5666636B2 (ja) | 2015-02-12 |
Family
ID=38778871
Family Applications (2)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2009513088A Expired - Fee Related JP5320610B2 (ja) | 2006-06-01 | 2007-05-31 | マイクロチャネル・アバランシェ・フォトダイオード(変形物) |
JP2013034806A Expired - Fee Related JP5666636B2 (ja) | 2006-06-01 | 2013-02-25 | マイクロチャネル・アバランシェ・フォトダイオード |
Family Applications Before (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2009513088A Expired - Fee Related JP5320610B2 (ja) | 2006-06-01 | 2007-05-31 | マイクロチャネル・アバランシェ・フォトダイオード(変形物) |
Country Status (8)
Country | Link |
---|---|
EP (1) | EP2026386A4 (ja) |
JP (2) | JP5320610B2 (ja) |
KR (1) | KR101301897B1 (ja) |
CN (1) | CN101675532B (ja) |
AU (1) | AU2007268338A1 (ja) |
CA (1) | CA2654034C (ja) |
RU (1) | RU2316848C1 (ja) |
WO (1) | WO2007139451A1 (ja) |
Families Citing this family (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
RU2528107C1 (ru) * | 2013-04-16 | 2014-09-10 | Зираддин Ягуб оглы Садыгов | Полупроводниковый лавинный детектор |
RU2731665C1 (ru) * | 2019-03-12 | 2020-09-07 | Общество С Ограниченной Ответственностью "Детектор Фотонный Аналоговый" (Ооо "Дефан") | Лавинный фотодетектор (варианты) и способ его изготовления (варианты) |
Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5893386A (ja) * | 1981-11-30 | 1983-06-03 | Semiconductor Res Found | 半導体光電変換装置 |
JPS63122285A (ja) * | 1986-11-12 | 1988-05-26 | Tokuzo Sukegawa | 半導体受光素子用材料 |
JPH0774385A (ja) * | 1993-09-03 | 1995-03-17 | Hamamatsu Photonics Kk | 静電誘導型アバランシェフォトダイオード |
JP2001077400A (ja) * | 1999-08-31 | 2001-03-23 | Tokai Rika Co Ltd | 半導体フォトデバイス |
JP2004104085A (ja) * | 2002-09-05 | 2004-04-02 | Korea Electronics Telecommun | アバランシェフォトトランジスタ |
JP2011040445A (ja) * | 2009-08-07 | 2011-02-24 | Hitachi Ltd | 半導体受光装置及びその製造方法 |
Family Cites Families (13)
Publication number | Priority date | Publication date | Assignee | Title |
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US771207A (en) | 1897-11-19 | 1904-09-27 | Gisbert Kapp | Apparatus for registering the supply of electricity. |
US4700209A (en) * | 1985-10-30 | 1987-10-13 | Rca Inc. | Avalanche photodiode and a method of making same |
SU1702831A1 (ru) | 1989-10-11 | 1997-06-27 | Институт ядерных исследований АН СССР | Лавинный фотоприемник |
RU2105388C1 (ru) * | 1996-04-10 | 1998-02-20 | Виктор Михайлович Горловин | Лавинный фотоприемник |
RU2102821C1 (ru) * | 1996-10-10 | 1998-01-20 | Зираддин Ягуб-оглы Садыгов | Лавинный фотодиод |
US5844291A (en) * | 1996-12-20 | 1998-12-01 | Board Of Regents, The University Of Texas System | Wide wavelength range high efficiency avalanche light detector with negative feedback |
RU2142175C1 (ru) * | 1998-09-18 | 1999-11-27 | Общество с ограниченной ответственностью "Центр перспективных технологий и аппаратуры" | Лавинный фотоприемник |
JP2001007381A (ja) * | 1999-06-24 | 2001-01-12 | Nippon Hoso Kyokai <Nhk> | 光電変換膜とその作製方法 |
KR100375829B1 (ko) * | 2000-12-19 | 2003-03-15 | 한국전자통신연구원 | 아발란치 광 검출기 |
JP2002252367A (ja) * | 2001-02-23 | 2002-09-06 | Nippon Hoso Kyokai <Nhk> | 高感度光電変換装置 |
JP4195556B2 (ja) * | 2001-08-07 | 2008-12-10 | 日本放送協会 | 光電変換膜作製方法、光電変換膜作製装置及び撮像素子 |
JP2004200308A (ja) * | 2002-12-17 | 2004-07-15 | Nippon Hoso Kyokai <Nhk> | 光電変換膜の作製方法および固体撮像素子 |
RU2294035C2 (ru) * | 2005-03-24 | 2007-02-20 | Зираддин Ягуб-оглы Садыгов | Лавинный фотодиод |
-
2006
- 2006-06-01 RU RU2006118960/28A patent/RU2316848C1/ru active
-
2007
- 2007-05-31 AU AU2007268338A patent/AU2007268338A1/en not_active Abandoned
- 2007-05-31 WO PCT/RU2007/000287 patent/WO2007139451A1/ru active Application Filing
- 2007-05-31 EP EP07794024.5A patent/EP2026386A4/en not_active Withdrawn
- 2007-05-31 CA CA2654034A patent/CA2654034C/en active Active
- 2007-05-31 KR KR1020087032265A patent/KR101301897B1/ko active IP Right Grant
- 2007-05-31 CN CN2007800249205A patent/CN101675532B/zh not_active Expired - Fee Related
- 2007-05-31 JP JP2009513088A patent/JP5320610B2/ja not_active Expired - Fee Related
-
2013
- 2013-02-25 JP JP2013034806A patent/JP5666636B2/ja not_active Expired - Fee Related
Patent Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5893386A (ja) * | 1981-11-30 | 1983-06-03 | Semiconductor Res Found | 半導体光電変換装置 |
JPS63122285A (ja) * | 1986-11-12 | 1988-05-26 | Tokuzo Sukegawa | 半導体受光素子用材料 |
JPH0774385A (ja) * | 1993-09-03 | 1995-03-17 | Hamamatsu Photonics Kk | 静電誘導型アバランシェフォトダイオード |
JP2001077400A (ja) * | 1999-08-31 | 2001-03-23 | Tokai Rika Co Ltd | 半導体フォトデバイス |
JP2004104085A (ja) * | 2002-09-05 | 2004-04-02 | Korea Electronics Telecommun | アバランシェフォトトランジスタ |
JP2011040445A (ja) * | 2009-08-07 | 2011-02-24 | Hitachi Ltd | 半導体受光装置及びその製造方法 |
Also Published As
Publication number | Publication date |
---|---|
KR101301897B1 (ko) | 2013-08-29 |
AU2007268338A1 (en) | 2007-12-06 |
EP2026386A4 (en) | 2013-07-31 |
JP2009539245A (ja) | 2009-11-12 |
CN101675532B (zh) | 2012-11-14 |
EP2026386A1 (en) | 2009-02-18 |
JP5666636B2 (ja) | 2015-02-12 |
WO2007139451A1 (fr) | 2007-12-06 |
RU2316848C1 (ru) | 2008-02-10 |
CA2654034A1 (en) | 2007-12-06 |
CA2654034C (en) | 2016-08-09 |
JP5320610B2 (ja) | 2013-10-23 |
CN101675532A (zh) | 2010-03-17 |
KR20100093143A (ko) | 2010-08-25 |
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