JP5320610B2 - マイクロチャネル・アバランシェ・フォトダイオード(変形物) - Google Patents
マイクロチャネル・アバランシェ・フォトダイオード(変形物) Download PDFInfo
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- JP5320610B2 JP5320610B2 JP2009513088A JP2009513088A JP5320610B2 JP 5320610 B2 JP5320610 B2 JP 5320610B2 JP 2009513088 A JP2009513088 A JP 2009513088A JP 2009513088 A JP2009513088 A JP 2009513088A JP 5320610 B2 JP5320610 B2 JP 5320610B2
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- 239000004065 semiconductor Substances 0.000 claims description 70
- 239000000758 substrate Substances 0.000 claims description 24
- 239000007787 solid Substances 0.000 claims description 20
- 239000000463 material Substances 0.000 claims description 9
- 239000011159 matrix material Substances 0.000 claims description 7
- 230000003321 amplification Effects 0.000 description 9
- 238000000034 method Methods 0.000 description 9
- 238000003199 nucleic acid amplification method Methods 0.000 description 9
- 230000035945 sensitivity Effects 0.000 description 7
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 4
- 230000015572 biosynthetic process Effects 0.000 description 4
- 229910052710 silicon Inorganic materials 0.000 description 4
- 239000010703 silicon Substances 0.000 description 4
- 230000005684 electric field Effects 0.000 description 3
- 229910052732 germanium Inorganic materials 0.000 description 3
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 3
- 150000002500 ions Chemical class 0.000 description 3
- 230000003595 spectral effect Effects 0.000 description 3
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 2
- 229910052719 titanium Inorganic materials 0.000 description 2
- 239000010936 titanium Substances 0.000 description 2
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 1
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- 238000009825 accumulation Methods 0.000 description 1
- 238000000137 annealing Methods 0.000 description 1
- 125000004429 atom Chemical group 0.000 description 1
- 229910052796 boron Inorganic materials 0.000 description 1
- 239000000969 carrier Substances 0.000 description 1
- 239000002800 charge carrier Substances 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 230000007812 deficiency Effects 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 238000000407 epitaxy Methods 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 238000002513 implantation Methods 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 239000007769 metal material Substances 0.000 description 1
- 238000012544 monitoring process Methods 0.000 description 1
- 230000007935 neutral effect Effects 0.000 description 1
- 230000005658 nuclear physics Effects 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 125000004437 phosphorous atom Chemical group 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 239000011574 phosphorus Substances 0.000 description 1
- 229920002120 photoresistant polymer Polymers 0.000 description 1
- 238000005036 potential barrier Methods 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 239000002210 silicon-based material Substances 0.000 description 1
- 150000003608 titanium Chemical class 0.000 description 1
- 238000003325 tomography Methods 0.000 description 1
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Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
- H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by potential barriers, e.g. phototransistors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
- H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by potential barriers, e.g. phototransistors
- H01L31/101—Devices sensitive to infrared, visible or ultraviolet radiation
- H01L31/102—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier
- H01L31/107—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier the potential barrier working in avalanche mode, e.g. avalanche photodiodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/0352—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions
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- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Light Receiving Elements (AREA)
Description
2:第1の付加的半導体層
3:シリコン半導体層
4:固体の領域
5:第2の付加的半導体層
Claims (1)
- 基板と、複数の半導体層とを含むアバランシェ・フォトダイオードであり、前記複数の半導体層が、前記基板との間に接合界面を形成する第1の付加的な半導体層、この第1の付加的な半導体層との間に接合界面を形成する半導体層であって固体の領域を含む半導体層、及び該固体の領域を含む半導体層との間に接合界面を形成する第2の付加的な半導体層とを含み、
前記アバランシェ・フォトダイオードの前記固体の領域を含む半導体層が、1つの同じ型の導電率を有する半導体材料によって囲まれていて且つ互いに分離した複数の固体の領域からなる、少なくとも一つのマトリックスを含んでおり、前記固体の領域は、前記固体の領域を含む半導体層と比較してより高い導電率を有し、前記固体の領域は、前記半導体材料と同じ材料から作成され、しかし前記半導体材料とは反対の導電型を有し、前記固体の領域を含む半導体層は、前記第1の付加的な半導体層と、p-n接合を形成していることを特徴とする、アバランシェ・フォトダイオード。
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
RU2006118960/28A RU2316848C1 (ru) | 2006-06-01 | 2006-06-01 | Микроканальный лавинный фотодиод |
RU2006118960 | 2006-06-01 | ||
PCT/RU2007/000287 WO2007139451A1 (fr) | 2006-06-01 | 2007-05-31 | Photodiode avalanche à microcanaux |
Related Child Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2013034806A Division JP5666636B2 (ja) | 2006-06-01 | 2013-02-25 | マイクロチャネル・アバランシェ・フォトダイオード |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2009539245A JP2009539245A (ja) | 2009-11-12 |
JP5320610B2 true JP5320610B2 (ja) | 2013-10-23 |
Family
ID=38778871
Family Applications (2)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2009513088A Expired - Fee Related JP5320610B2 (ja) | 2006-06-01 | 2007-05-31 | マイクロチャネル・アバランシェ・フォトダイオード(変形物) |
JP2013034806A Expired - Fee Related JP5666636B2 (ja) | 2006-06-01 | 2013-02-25 | マイクロチャネル・アバランシェ・フォトダイオード |
Family Applications After (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2013034806A Expired - Fee Related JP5666636B2 (ja) | 2006-06-01 | 2013-02-25 | マイクロチャネル・アバランシェ・フォトダイオード |
Country Status (8)
Country | Link |
---|---|
EP (1) | EP2026386A4 (ja) |
JP (2) | JP5320610B2 (ja) |
KR (1) | KR101301897B1 (ja) |
CN (1) | CN101675532B (ja) |
AU (1) | AU2007268338A1 (ja) |
CA (1) | CA2654034C (ja) |
RU (1) | RU2316848C1 (ja) |
WO (1) | WO2007139451A1 (ja) |
Families Citing this family (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
RU2528107C1 (ru) * | 2013-04-16 | 2014-09-10 | Зираддин Ягуб оглы Садыгов | Полупроводниковый лавинный детектор |
RU2731665C1 (ru) * | 2019-03-12 | 2020-09-07 | Общество С Ограниченной Ответственностью "Детектор Фотонный Аналоговый" (Ооо "Дефан") | Лавинный фотодетектор (варианты) и способ его изготовления (варианты) |
Family Cites Families (19)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US771207A (en) | 1897-11-19 | 1904-09-27 | Gisbert Kapp | Apparatus for registering the supply of electricity. |
JPH077844B2 (ja) * | 1981-11-30 | 1995-01-30 | 財団法人半導体研究振興会 | 静電誘導型半導体光電変換装置 |
US4700209A (en) * | 1985-10-30 | 1987-10-13 | Rca Inc. | Avalanche photodiode and a method of making same |
JPS63122285A (ja) * | 1986-11-12 | 1988-05-26 | Tokuzo Sukegawa | 半導体受光素子用材料 |
SU1702831A1 (ru) | 1989-10-11 | 1997-06-27 | Институт ядерных исследований АН СССР | Лавинный фотоприемник |
JPH0774385A (ja) * | 1993-09-03 | 1995-03-17 | Hamamatsu Photonics Kk | 静電誘導型アバランシェフォトダイオード |
RU2105388C1 (ru) * | 1996-04-10 | 1998-02-20 | Виктор Михайлович Горловин | Лавинный фотоприемник |
RU2102821C1 (ru) * | 1996-10-10 | 1998-01-20 | Зираддин Ягуб-оглы Садыгов | Лавинный фотодиод |
US5844291A (en) * | 1996-12-20 | 1998-12-01 | Board Of Regents, The University Of Texas System | Wide wavelength range high efficiency avalanche light detector with negative feedback |
RU2142175C1 (ru) * | 1998-09-18 | 1999-11-27 | Общество с ограниченной ответственностью "Центр перспективных технологий и аппаратуры" | Лавинный фотоприемник |
JP2001007381A (ja) * | 1999-06-24 | 2001-01-12 | Nippon Hoso Kyokai <Nhk> | 光電変換膜とその作製方法 |
JP2001077400A (ja) * | 1999-08-31 | 2001-03-23 | Tokai Rika Co Ltd | 半導体フォトデバイス |
KR100375829B1 (ko) * | 2000-12-19 | 2003-03-15 | 한국전자통신연구원 | 아발란치 광 검출기 |
JP2002252367A (ja) * | 2001-02-23 | 2002-09-06 | Nippon Hoso Kyokai <Nhk> | 高感度光電変換装置 |
JP4195556B2 (ja) * | 2001-08-07 | 2008-12-10 | 日本放送協会 | 光電変換膜作製方法、光電変換膜作製装置及び撮像素子 |
KR100463416B1 (ko) * | 2002-09-05 | 2004-12-23 | 한국전자통신연구원 | 아발란치 포토트랜지스터 |
JP2004200308A (ja) * | 2002-12-17 | 2004-07-15 | Nippon Hoso Kyokai <Nhk> | 光電変換膜の作製方法および固体撮像素子 |
RU2294035C2 (ru) * | 2005-03-24 | 2007-02-20 | Зираддин Ягуб-оглы Садыгов | Лавинный фотодиод |
JP5401203B2 (ja) * | 2009-08-07 | 2014-01-29 | 株式会社日立製作所 | 半導体受光装置及びその製造方法 |
-
2006
- 2006-06-01 RU RU2006118960/28A patent/RU2316848C1/ru active
-
2007
- 2007-05-31 AU AU2007268338A patent/AU2007268338A1/en not_active Abandoned
- 2007-05-31 WO PCT/RU2007/000287 patent/WO2007139451A1/ru active Application Filing
- 2007-05-31 EP EP07794024.5A patent/EP2026386A4/en not_active Withdrawn
- 2007-05-31 CA CA2654034A patent/CA2654034C/en active Active
- 2007-05-31 KR KR1020087032265A patent/KR101301897B1/ko active IP Right Grant
- 2007-05-31 CN CN2007800249205A patent/CN101675532B/zh not_active Expired - Fee Related
- 2007-05-31 JP JP2009513088A patent/JP5320610B2/ja not_active Expired - Fee Related
-
2013
- 2013-02-25 JP JP2013034806A patent/JP5666636B2/ja not_active Expired - Fee Related
Also Published As
Publication number | Publication date |
---|---|
KR101301897B1 (ko) | 2013-08-29 |
AU2007268338A1 (en) | 2007-12-06 |
EP2026386A4 (en) | 2013-07-31 |
JP2009539245A (ja) | 2009-11-12 |
CN101675532B (zh) | 2012-11-14 |
EP2026386A1 (en) | 2009-02-18 |
JP5666636B2 (ja) | 2015-02-12 |
WO2007139451A1 (fr) | 2007-12-06 |
RU2316848C1 (ru) | 2008-02-10 |
CA2654034A1 (en) | 2007-12-06 |
CA2654034C (en) | 2016-08-09 |
CN101675532A (zh) | 2010-03-17 |
KR20100093143A (ko) | 2010-08-25 |
JP2013138240A (ja) | 2013-07-11 |
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