JP2009530853A5 - - Google Patents
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- JP2009530853A5 JP2009530853A5 JP2009501475A JP2009501475A JP2009530853A5 JP 2009530853 A5 JP2009530853 A5 JP 2009530853A5 JP 2009501475 A JP2009501475 A JP 2009501475A JP 2009501475 A JP2009501475 A JP 2009501475A JP 2009530853 A5 JP2009530853 A5 JP 2009530853A5
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- JP
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- Prior art keywords
- bromide
- chloride
- chemical mechanical
- mechanical polishing
- substrate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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- 238000005498 polishing Methods 0.000 claims 18
- 239000000126 substance Substances 0.000 claims 11
- 239000000758 substrate Substances 0.000 claims 10
- -1 halogen anion Chemical class 0.000 claims 5
- 238000005296 abrasive Methods 0.000 claims 4
- 239000000969 carrier Substances 0.000 claims 4
- VEXZGXHMUGYJMC-UHFFFAOYSA-M chloride anion Chemical compound [Cl-] VEXZGXHMUGYJMC-UHFFFAOYSA-M 0.000 claims 4
- 229910052736 halogen Inorganic materials 0.000 claims 4
- 239000007788 liquid Substances 0.000 claims 4
- CPELXLSAUQHCOX-UHFFFAOYSA-M bromide Chemical compound [Br-] CPELXLSAUQHCOX-UHFFFAOYSA-M 0.000 claims 3
- RYGMFSIKBFXOCR-UHFFFAOYSA-N copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims 3
- 229910052802 copper Inorganic materials 0.000 claims 3
- 239000010949 copper Substances 0.000 claims 3
- VSCWAEJMTAWNJL-UHFFFAOYSA-K Aluminium chloride Chemical compound Cl[Al](Cl)Cl VSCWAEJMTAWNJL-UHFFFAOYSA-K 0.000 claims 2
- OFJATJUUUCAKMK-UHFFFAOYSA-N Cerium(IV) oxide Chemical compound [O-2]=[Ce+4]=[O-2] OFJATJUUUCAKMK-UHFFFAOYSA-N 0.000 claims 2
- AMXOYNBUYSYVKV-UHFFFAOYSA-M Lithium bromide Chemical compound [Li+].[Br-] AMXOYNBUYSYVKV-UHFFFAOYSA-M 0.000 claims 2
- KWGKDLIKAYFUFQ-UHFFFAOYSA-M Lithium chloride Chemical compound [Li+].[Cl-] KWGKDLIKAYFUFQ-UHFFFAOYSA-M 0.000 claims 2
- TWRXJAOTZQYOKJ-UHFFFAOYSA-L MgCl2 Chemical compound [Mg+2].[Cl-].[Cl-] TWRXJAOTZQYOKJ-UHFFFAOYSA-L 0.000 claims 2
- IOLCXVTUBQKXJR-UHFFFAOYSA-M Potassium bromide Chemical compound [K+].[Br-] IOLCXVTUBQKXJR-UHFFFAOYSA-M 0.000 claims 2
- JAAGVIUFBAHDMA-UHFFFAOYSA-M Rubidium bromide Chemical compound [Br-].[Rb+] JAAGVIUFBAHDMA-UHFFFAOYSA-M 0.000 claims 2
- FGDZQCVHDSGLHJ-UHFFFAOYSA-M Rubidium chloride Chemical compound [Cl-].[Rb+] FGDZQCVHDSGLHJ-UHFFFAOYSA-M 0.000 claims 2
- JHJLBTNAGRQEKS-UHFFFAOYSA-M Sodium bromide Chemical compound [Na+].[Br-] JHJLBTNAGRQEKS-UHFFFAOYSA-M 0.000 claims 2
- MCMNRKCIXSYSNV-UHFFFAOYSA-N ZrO2 Chemical compound O=[Zr]=O MCMNRKCIXSYSNV-UHFFFAOYSA-N 0.000 claims 2
- 125000000217 alkyl group Chemical group 0.000 claims 2
- CPELXLSAUQHCOX-UHFFFAOYSA-N hydrogen bromide Chemical compound Br CPELXLSAUQHCOX-UHFFFAOYSA-N 0.000 claims 2
- 239000007800 oxidant agent Substances 0.000 claims 2
- WCUXLLCKKVVCTQ-UHFFFAOYSA-M potassium chloride Chemical compound [Cl-].[K+] WCUXLLCKKVVCTQ-UHFFFAOYSA-M 0.000 claims 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims 2
- FAPWRFPIFSIZLT-UHFFFAOYSA-M sodium chloride Chemical compound [Na+].[Cl-] FAPWRFPIFSIZLT-UHFFFAOYSA-M 0.000 claims 2
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 claims 2
- 229910052715 tantalum Inorganic materials 0.000 claims 2
- NHGXDBSUJJNIRV-UHFFFAOYSA-M tetrabutylammonium chloride Chemical compound [Cl-].CCCC[N+](CCCC)(CCCC)CCCC NHGXDBSUJJNIRV-UHFFFAOYSA-M 0.000 claims 2
- PNEYBMLMFCGWSK-UHFFFAOYSA-N AI2O3 Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 claims 1
- PQLAYKMGZDUDLQ-UHFFFAOYSA-K Aluminium bromide Chemical compound Br[Al](Br)Br PQLAYKMGZDUDLQ-UHFFFAOYSA-K 0.000 claims 1
- NKQIMNKPSDEDMO-UHFFFAOYSA-L Barium bromide Chemical compound [Br-].[Br-].[Ba+2] NKQIMNKPSDEDMO-UHFFFAOYSA-L 0.000 claims 1
- WDIHJSXYQDMJHN-UHFFFAOYSA-L Barium chloride Chemical compound [Cl-].[Cl-].[Ba+2] WDIHJSXYQDMJHN-UHFFFAOYSA-L 0.000 claims 1
- LYQFWZFBNBDLEO-UHFFFAOYSA-M Caesium bromide Chemical compound [Br-].[Cs+] LYQFWZFBNBDLEO-UHFFFAOYSA-M 0.000 claims 1
- AIYUHDOJVYHVIT-UHFFFAOYSA-M Caesium chloride Chemical compound [Cl-].[Cs+] AIYUHDOJVYHVIT-UHFFFAOYSA-M 0.000 claims 1
- WGEFECGEFUFIQW-UHFFFAOYSA-L Calcium bromide Chemical compound [Ca+2].[Br-].[Br-] WGEFECGEFUFIQW-UHFFFAOYSA-L 0.000 claims 1
- QTMDXZNDVAMKGV-UHFFFAOYSA-L Copper(II) bromide Chemical compound [Cu+2].[Br-].[Br-] QTMDXZNDVAMKGV-UHFFFAOYSA-L 0.000 claims 1
- ORTQZVOHEJQUHG-UHFFFAOYSA-L Copper(II) chloride Chemical compound Cl[Cu]Cl ORTQZVOHEJQUHG-UHFFFAOYSA-L 0.000 claims 1
- UPWPDUACHOATKO-UHFFFAOYSA-K Gallium trichloride Chemical compound Cl[Ga](Cl)Cl UPWPDUACHOATKO-UHFFFAOYSA-K 0.000 claims 1
- SRVXDMYFQIODQI-UHFFFAOYSA-K Gallium(III) bromide Chemical compound Br[Ga](Br)Br SRVXDMYFQIODQI-UHFFFAOYSA-K 0.000 claims 1
- VEXZGXHMUGYJMC-UHFFFAOYSA-N HCl Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 claims 1
- PSCMQHVBLHHWTO-UHFFFAOYSA-K Indium(III) chloride Chemical compound Cl[In](Cl)Cl PSCMQHVBLHHWTO-UHFFFAOYSA-K 0.000 claims 1
- GYCHYNMREWYSKH-UHFFFAOYSA-L Iron(II) bromide Chemical compound [Fe+2].[Br-].[Br-] GYCHYNMREWYSKH-UHFFFAOYSA-L 0.000 claims 1
- NMCUIPGRVMDVDB-UHFFFAOYSA-L Iron(II) chloride Chemical compound Cl[Fe]Cl NMCUIPGRVMDVDB-UHFFFAOYSA-L 0.000 claims 1
- RBTARNINKXHZNM-UHFFFAOYSA-K Iron(III) chloride Chemical compound Cl[Fe](Cl)Cl RBTARNINKXHZNM-UHFFFAOYSA-K 0.000 claims 1
- OTCKOJUMXQWKQG-UHFFFAOYSA-L Magnesium bromide Chemical compound [Mg+2].[Br-].[Br-] OTCKOJUMXQWKQG-UHFFFAOYSA-L 0.000 claims 1
- YJPVTCSBVRMESK-UHFFFAOYSA-L Strontium bromide Chemical compound [Br-].[Br-].[Sr+2] YJPVTCSBVRMESK-UHFFFAOYSA-L 0.000 claims 1
- AHBGXTDRMVNFER-UHFFFAOYSA-L Strontium chloride Chemical compound [Cl-].[Cl-].[Sr+2] AHBGXTDRMVNFER-UHFFFAOYSA-L 0.000 claims 1
- JRMUNVKIHCOMHV-UHFFFAOYSA-M Tetra-n-butylammonium bromide Chemical compound [Br-].CCCC[N+](CCCC)(CCCC)CCCC JRMUNVKIHCOMHV-UHFFFAOYSA-M 0.000 claims 1
- HWCKGOZZJDHMNC-UHFFFAOYSA-M Tetraethylammonium bromide Chemical compound [Br-].CC[N+](CC)(CC)CC HWCKGOZZJDHMNC-UHFFFAOYSA-M 0.000 claims 1
- YMBCJWGVCUEGHA-UHFFFAOYSA-M Tetraethylammonium chloride Chemical compound [Cl-].CC[N+](CC)(CC)CC YMBCJWGVCUEGHA-UHFFFAOYSA-M 0.000 claims 1
- OKIZCWYLBDKLSU-UHFFFAOYSA-M Tetramethylammonium chloride Chemical compound [Cl-].C[N+](C)(C)C OKIZCWYLBDKLSU-UHFFFAOYSA-M 0.000 claims 1
- PGAPATLGJSQQBU-UHFFFAOYSA-M Thallium(I) bromide Chemical compound [Tl]Br PGAPATLGJSQQBU-UHFFFAOYSA-M 0.000 claims 1
- GBECUEIQVRDUKB-UHFFFAOYSA-M Thallium(I) chloride Chemical compound [Tl]Cl GBECUEIQVRDUKB-UHFFFAOYSA-M 0.000 claims 1
- VNDYJBBGRKZCSX-UHFFFAOYSA-L Zinc bromide Chemical compound Br[Zn]Br VNDYJBBGRKZCSX-UHFFFAOYSA-L 0.000 claims 1
- JIAARYAFYJHUJI-UHFFFAOYSA-L Zinc chloride Chemical compound [Cl-].[Cl-].[Zn+2] JIAARYAFYJHUJI-UHFFFAOYSA-L 0.000 claims 1
- 239000002253 acid Substances 0.000 claims 1
- 229910001513 alkali metal bromide Inorganic materials 0.000 claims 1
- 229910001514 alkali metal chloride Inorganic materials 0.000 claims 1
- 150000001347 alkyl bromides Chemical class 0.000 claims 1
- 150000001348 alkyl chlorides Chemical class 0.000 claims 1
- QGZKDVFQNNGYKY-UHFFFAOYSA-O ammonium Chemical compound [NH4+] QGZKDVFQNNGYKY-UHFFFAOYSA-O 0.000 claims 1
- 229910001620 barium bromide Inorganic materials 0.000 claims 1
- 229910001626 barium chloride Inorganic materials 0.000 claims 1
- 150000003842 bromide salts Chemical class 0.000 claims 1
- UXVMQQNJUSDDNG-UHFFFAOYSA-L cacl2 Chemical compound [Cl-].[Cl-].[Ca+2] UXVMQQNJUSDDNG-UHFFFAOYSA-L 0.000 claims 1
- 229910001622 calcium bromide Inorganic materials 0.000 claims 1
- 229940059251 calcium bromide Drugs 0.000 claims 1
- 239000001110 calcium chloride Substances 0.000 claims 1
- 229910001628 calcium chloride Inorganic materials 0.000 claims 1
- 229940098124 cesium chloride Drugs 0.000 claims 1
- 229940046149 ferrous bromide Drugs 0.000 claims 1
- 229960002089 ferrous chloride Drugs 0.000 claims 1
- 229910000042 hydrogen bromide Inorganic materials 0.000 claims 1
- IXCSERBJSXMMFS-UHFFFAOYSA-N hydrogen chloride Substances Cl.Cl IXCSERBJSXMMFS-UHFFFAOYSA-N 0.000 claims 1
- 229910000041 hydrogen chloride Inorganic materials 0.000 claims 1
- 229910001623 magnesium bromide Inorganic materials 0.000 claims 1
- 229910001629 magnesium chloride Inorganic materials 0.000 claims 1
- 229910001509 metal bromide Inorganic materials 0.000 claims 1
- 239000001103 potassium chloride Substances 0.000 claims 1
- 235000011164 potassium chloride Nutrition 0.000 claims 1
- 229940102127 rubidium chloride Drugs 0.000 claims 1
- 239000000377 silicon dioxide Substances 0.000 claims 1
- 229940075581 sodium bromide Drugs 0.000 claims 1
- 239000011780 sodium chloride Substances 0.000 claims 1
- 229910001625 strontium bromide Inorganic materials 0.000 claims 1
- 229940074155 strontium bromide Drugs 0.000 claims 1
- 229910001631 strontium chloride Inorganic materials 0.000 claims 1
- 229940013553 strontium chloride Drugs 0.000 claims 1
- DDFYFBUWEBINLX-UHFFFAOYSA-M tetramethylammonium bromide Chemical compound [Br-].C[N+](C)(C)C DDFYFBUWEBINLX-UHFFFAOYSA-M 0.000 claims 1
- OSBSFAARYOCBHB-UHFFFAOYSA-N tetrapropylammonium Chemical compound CCC[N+](CCC)(CCC)CCC OSBSFAARYOCBHB-UHFFFAOYSA-N 0.000 claims 1
- BGQMOFGZRJUORO-UHFFFAOYSA-M tetrapropylammonium bromide Chemical compound [Br-].CCC[N+](CCC)(CCC)CCC BGQMOFGZRJUORO-UHFFFAOYSA-M 0.000 claims 1
- 229910021381 transition metal chloride Inorganic materials 0.000 claims 1
- JKNHZOAONLKYQL-UHFFFAOYSA-K tribromoindigane Chemical compound Br[In](Br)Br JKNHZOAONLKYQL-UHFFFAOYSA-K 0.000 claims 1
- FEONEKOZSGPOFN-UHFFFAOYSA-K tribromoiron Chemical compound Br[Fe](Br)Br FEONEKOZSGPOFN-UHFFFAOYSA-K 0.000 claims 1
- 229940102001 zinc bromide Drugs 0.000 claims 1
- 239000011592 zinc chloride Substances 0.000 claims 1
- 235000005074 zinc chloride Nutrition 0.000 claims 1
Claims (11)
- (a)研磨パッド、研磨剤及びそれらの組み合わせからなる群より選択される研磨構成材と、
(b)液体キャリヤーと、
(c)基材の少なくとも一部を酸化する酸化剤であって、前記液体キャリヤー及びそれに溶解又は懸濁した任意の成分の質量に基づいて0.5wt%以下の量で存在する酸化剤と、
(d)塩化物、臭化物及びそれらの組み合わせからなる群より選択されるハロゲンアニオンと
を含み、任意の成分が溶解又は懸濁した前記液体キャリヤーが3以下のpHを有する、基材を研磨するための化学機械研磨系。 - 前記基材が少なくとも1つのタンタル層と少なくとも1つの銅層を含む、請求項1に記載の化学機械研磨系。
- 前記液体キャリヤー中に懸濁された研磨剤を含む、請求項1に記載の化学機械研磨系。
- 前記研磨剤が、アルミナ、セリア、シリカ、ジルコニア、及びそれらの組み合わせからなる群より選択される、請求項3に記載の化学機械研磨系。
- 研磨パッド及び該研磨パッドに固定された研磨剤を含む、請求項1に記載の化学機械研磨系。
- 前記ハロゲンアニオンが、酸の塩化物又は臭化物、アルカリ金属の塩化物又は臭化物、第IIIA族の塩化物又は臭化物、アンモニウム又はアンモニウム誘導体の塩化物又は臭化物塩、遷移金属の塩化物又は臭化物、及びそれらの組み合わせからなる群より選択される供給源によって生成される、請求項1に記載の化学機械研磨系。
- 前記ハロゲンアニオンが、塩化水素、塩化マグネシウム、塩化カルシウム、塩化ストロンチウム、塩化バリウム、塩化カリウム、塩化セシウム、塩化リチウム、塩化ナトリウム、塩化ルビジウム、塩化テトラブチルアンモニウム、塩化テトラメチルアンモニウム、塩化テトラエチルアンモニウム、塩化テトラプロピルアンモニウム、アルキルがC1〜C20アルキルである塩化アルキルベンジルジメチルアンモニウム、塩化アルミニウム、塩化ガリウム、塩化インジウム、塩化タリウム、塩化亜鉛、塩化銅、塩化第二鉄、塩化第一鉄、臭化テトラブチルアンモニウム、臭化テトラメチルアンモニウム、臭化テトラエチルアンモニウム、臭化テトラプロピルアンモニウム、アルキルがC1〜C20アルキルである臭化アルキルベンジルジメチルアンモニウム、臭化水素、臭化リチウム、臭化カリウム、臭化セシウム、臭化ルビジウム、臭化ナトリウム、臭化マグネシウム、臭化カルシウム、臭化ストロンチウム、臭化バリウム、臭化アルミニウム、臭化ガリウム、臭化インジウム、臭化タリウム、臭化亜鉛、臭化銅、臭化第二鉄、臭化第一鉄、及びそれらの組み合わせからなる群より選択される供給源によって生成される、請求項6に記載の化学機械研磨系。
- 前記ハロゲンアニオンの濃度が0.5mM〜50mMである、請求項6に記載の化学機械研磨系。
- (i)基材を請求項1〜8のいずれか1項に記載の化学機械研磨系と接触させる工程、
(ii)前記基材に対して前記研磨構成材を動かす工程、及び
(iii)該基材の少なくとも一部を削って該基材を研磨する工程
を含む、基材を化学機械研磨する方法。 - 前記基材が少なくとも1つのタンタル層と少なくとも1つの銅層を含む、請求項9に記載の方法。
- 前記銅層が1000Å/分以下の速度で前記基材から除去される、請求項10に記載の方法。
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US11/388,085 US7820067B2 (en) | 2006-03-23 | 2006-03-23 | Halide anions for metal removal rate control |
US11/388,085 | 2006-03-23 | ||
PCT/US2007/006709 WO2007111855A2 (en) | 2006-03-23 | 2007-03-16 | Halide anions for metal removal rate control |
Publications (3)
Publication Number | Publication Date |
---|---|
JP2009530853A JP2009530853A (ja) | 2009-08-27 |
JP2009530853A5 true JP2009530853A5 (ja) | 2010-05-06 |
JP5313866B2 JP5313866B2 (ja) | 2013-10-09 |
Family
ID=38450247
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2009501475A Expired - Fee Related JP5313866B2 (ja) | 2006-03-23 | 2007-03-16 | 金属の除去速度を制御するためのハロゲン化物アニオン |
Country Status (9)
Country | Link |
---|---|
US (1) | US7820067B2 (ja) |
EP (1) | EP1996664B1 (ja) |
JP (1) | JP5313866B2 (ja) |
KR (1) | KR101364318B1 (ja) |
CN (1) | CN101389724B (ja) |
IL (1) | IL192550A0 (ja) |
MY (1) | MY145564A (ja) |
TW (1) | TWI343406B (ja) |
WO (1) | WO2007111855A2 (ja) |
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US8425797B2 (en) * | 2008-03-21 | 2013-04-23 | Cabot Microelectronics Corporation | Compositions for polishing aluminum/copper and titanium in damascene structures |
US8226840B2 (en) | 2008-05-02 | 2012-07-24 | Micron Technology, Inc. | Methods of removing silicon dioxide |
US20100096584A1 (en) * | 2008-10-22 | 2010-04-22 | Fujimi Corporation | Polishing Composition and Polishing Method Using the Same |
US10858544B2 (en) * | 2018-05-24 | 2020-12-08 | Taiwan Semiconductor Manufacturing Company Ltd. | Chemical mechanical polishing slurry and chemical mechanical polishing process using the same |
JPWO2020166676A1 (ja) * | 2019-02-13 | 2021-12-16 | 株式会社トクヤマ | 次亜塩素酸イオン、及びpH緩衝剤を含む半導体ウェハの処理液 |
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US6812193B2 (en) | 2001-08-31 | 2004-11-02 | International Business Machines Corporation | Slurry for mechanical polishing (CMP) of metals and use thereof |
US6719920B2 (en) | 2001-11-30 | 2004-04-13 | Intel Corporation | Slurry for polishing a barrier layer |
US6730592B2 (en) * | 2001-12-21 | 2004-05-04 | Micron Technology, Inc. | Methods for planarization of metal-containing surfaces using halogens and halide salts |
US7316603B2 (en) * | 2002-01-22 | 2008-01-08 | Cabot Microelectronics Corporation | Compositions and methods for tantalum CMP |
US20030168627A1 (en) * | 2002-02-22 | 2003-09-11 | Singh Rajiv K. | Slurry and method for chemical mechanical polishing of metal structures including refractory metal based barrier layers |
US6821309B2 (en) | 2002-02-22 | 2004-11-23 | University Of Florida | Chemical-mechanical polishing slurry for polishing of copper or silver films |
US6641630B1 (en) * | 2002-06-06 | 2003-11-04 | Cabot Microelectronics Corp. | CMP compositions containing iodine and an iodine vapor-trapping agent |
US7300601B2 (en) * | 2002-12-10 | 2007-11-27 | Advanced Technology Materials, Inc. | Passivative chemical mechanical polishing composition for copper film planarization |
JP2004343016A (ja) * | 2003-05-19 | 2004-12-02 | Jsr Corp | 研磨パッド及び研磨方法 |
GB2402941B (en) * | 2003-06-09 | 2007-06-27 | Kao Corp | Method for manufacturing substrate |
US20050076580A1 (en) * | 2003-10-10 | 2005-04-14 | Air Products And Chemicals, Inc. | Polishing composition and use thereof |
US20050097825A1 (en) * | 2003-11-06 | 2005-05-12 | Jinru Bian | Compositions and methods for a barrier removal |
US20050104048A1 (en) * | 2003-11-13 | 2005-05-19 | Thomas Terence M. | Compositions and methods for polishing copper |
-
2006
- 2006-03-23 US US11/388,085 patent/US7820067B2/en not_active Expired - Fee Related
-
2007
- 2007-03-16 CN CN2007800066952A patent/CN101389724B/zh not_active Expired - Fee Related
- 2007-03-16 WO PCT/US2007/006709 patent/WO2007111855A2/en active Application Filing
- 2007-03-16 JP JP2009501475A patent/JP5313866B2/ja not_active Expired - Fee Related
- 2007-03-16 EP EP07753344A patent/EP1996664B1/en not_active Not-in-force
- 2007-03-16 KR KR1020087025806A patent/KR101364318B1/ko not_active IP Right Cessation
- 2007-03-23 TW TW096110172A patent/TWI343406B/zh not_active IP Right Cessation
-
2008
- 2008-07-01 IL IL192550A patent/IL192550A0/en not_active IP Right Cessation
- 2008-09-19 MY MYPI20083709A patent/MY145564A/en unknown
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