WO2011136597A3 - 구리와 티타늄을 포함하는 금속막용 식각액 조성물 - Google Patents

구리와 티타늄을 포함하는 금속막용 식각액 조성물 Download PDF

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Publication number
WO2011136597A3
WO2011136597A3 PCT/KR2011/003178 KR2011003178W WO2011136597A3 WO 2011136597 A3 WO2011136597 A3 WO 2011136597A3 KR 2011003178 W KR2011003178 W KR 2011003178W WO 2011136597 A3 WO2011136597 A3 WO 2011136597A3
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WO
WIPO (PCT)
Prior art keywords
copper
etching solution
metal layer
layer etching
titanium composition
Prior art date
Application number
PCT/KR2011/003178
Other languages
English (en)
French (fr)
Other versions
WO2011136597A2 (ko
Inventor
임민기
권오병
이유진
유인호
이준우
박영철
장상훈
Original Assignee
동우 화인켐 주식회사
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from KR1020100039822A external-priority patent/KR20110120420A/ko
Priority claimed from KR1020100040567A external-priority patent/KR101641740B1/ko
Application filed by 동우 화인켐 주식회사 filed Critical 동우 화인켐 주식회사
Priority to CN2011800161296A priority Critical patent/CN102834548A/zh
Publication of WO2011136597A2 publication Critical patent/WO2011136597A2/ko
Publication of WO2011136597A3 publication Critical patent/WO2011136597A3/ko

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    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
    • C23F1/00—Etching metallic material by chemical means
    • C23F1/10—Etching compositions
    • C23F1/14—Aqueous compositions
    • C23F1/42—Aqueous compositions containing a dispersed water-immiscible liquid
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
    • C23F1/00—Etching metallic material by chemical means
    • C23F1/10—Etching compositions
    • C23F1/14—Aqueous compositions
    • C23F1/16—Acidic compositions
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
    • C23F1/00—Etching metallic material by chemical means
    • C23F1/02—Local etching
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
    • C23F1/00—Etching metallic material by chemical means
    • C23F1/10—Etching compositions
    • C23F1/14—Aqueous compositions
    • C23F1/16—Acidic compositions
    • C23F1/18—Acidic compositions for etching copper or alloys thereof
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
    • C23F1/00—Etching metallic material by chemical means
    • C23F1/10—Etching compositions
    • C23F1/14—Aqueous compositions
    • C23F1/16—Acidic compositions
    • C23F1/26—Acidic compositions for etching refractory metals
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
    • H01L21/321—After treatment
    • H01L21/3213—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer
    • H01L21/32133—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only
    • H01L21/32134—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only by liquid etching only

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Dispersion Chemistry (AREA)
  • ing And Chemical Polishing (AREA)
  • Weting (AREA)

Abstract

본 발명은 조성물 총 중량에 대하여, 과황산염 5~20중량%; 함불소화합물 0.01~2중량%; 무기산, 무기산염 및 이들의 혼합물 중에서 선택되는 1종 이상 1~10중량%; 고리형 아민화합물 0.3~5중량%; 함염소화합물 및 구리염에서 선택되는 1종 이상 0.01~8중량%; 및 물 잔량을 포함하는 것을 특징으로 하는 구리와 티타늄을 포함하는 금속막용 식각액 조성물에 관한 것이다.
PCT/KR2011/003178 2010-04-29 2011-04-28 구리와 티타늄을 포함하는 금속막용 식각액 조성물 WO2011136597A2 (ko)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN2011800161296A CN102834548A (zh) 2010-04-29 2011-04-28 用于含铜和钛的金属层的蚀刻液组合物

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
KR1020100039822A KR20110120420A (ko) 2010-04-29 2010-04-29 구리와 티타늄을 포함하는 금속막용 식각액 조성물
KR10-2010-0039822 2010-04-29
KR1020100040567A KR101641740B1 (ko) 2010-04-30 2010-04-30 구리와 티타늄을 포함하는 금속막용 식각액 조성물
KR10-2010-0040567 2010-04-30

Publications (2)

Publication Number Publication Date
WO2011136597A2 WO2011136597A2 (ko) 2011-11-03
WO2011136597A3 true WO2011136597A3 (ko) 2012-03-01

Family

ID=44862076

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PCT/KR2011/003178 WO2011136597A2 (ko) 2010-04-29 2011-04-28 구리와 티타늄을 포함하는 금속막용 식각액 조성물

Country Status (3)

Country Link
CN (2) CN106995922A (ko)
TW (1) TWI608126B (ko)
WO (1) WO2011136597A2 (ko)

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101922625B1 (ko) * 2012-07-03 2018-11-28 삼성디스플레이 주식회사 금속 배선 식각액 및 이를 이용한 금속 배선 형성 방법
KR102002131B1 (ko) * 2012-08-03 2019-07-22 삼성디스플레이 주식회사 식각액 조성물 및 이를 이용한 박막 트랜지스터 제조 방법
CN102925894B (zh) * 2012-10-09 2014-10-29 江阴润玛电子材料股份有限公司 一种酸性铜蚀刻液及其制备工艺
KR102175313B1 (ko) * 2013-09-24 2020-11-09 삼성디스플레이 주식회사 식각액 조성물, 및 이를 이용한 금속 배선과 박막 트랜지스터 기판 형성 방법
KR102160286B1 (ko) * 2013-11-04 2020-09-28 동우 화인켐 주식회사 액정표시장치용 어레이 기판의 제조방법
KR20160027598A (ko) * 2014-09-01 2016-03-10 삼성디스플레이 주식회사 식각 조성물, 이를 이용한 투명 전극의 형성 방법 및 표시 기판의 제조 방법
CN104233302B (zh) * 2014-09-15 2016-09-14 南通万德科技有限公司 一种蚀刻液及其应用
CN108456885B (zh) * 2017-02-13 2022-08-23 东进世美肯株式会社 蚀刻液组合物以及利用其的金属布线形成方法
KR20220051612A (ko) * 2020-10-19 2022-04-26 동우 화인켐 주식회사 식각액 조성물 및 이를 이용한 표시장치용 어레이 기판의 제조방법

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5298117A (en) * 1993-07-19 1994-03-29 At&T Bell Laboratories Etching of copper-containing devices
KR20020097348A (ko) * 2001-06-20 2002-12-31 동우 화인켐 주식회사 구리 티타늄막의 식각용액 및 그 식각방법
KR20060099089A (ko) * 2005-03-10 2006-09-19 엘지.필립스 엘시디 주식회사 금속배선 식각용액 및 이를 이용한 금속배선 식각방법과 상기 식각용액을 이용한 액정표시장치의 제조방법
KR20100035250A (ko) * 2008-09-26 2010-04-05 테크노세미켐 주식회사 액정표시장치의 구리 및 구리/몰리브데늄 또는 구리/몰리브데늄합금 전극용 식각조성물

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2781954B2 (ja) * 1994-03-04 1998-07-30 メック株式会社 銅および銅合金の表面処理剤
KR101310310B1 (ko) * 2007-03-15 2013-09-23 주식회사 동진쎄미켐 박막트랜지스터 액정표시장치의 식각액 조성물

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5298117A (en) * 1993-07-19 1994-03-29 At&T Bell Laboratories Etching of copper-containing devices
KR20020097348A (ko) * 2001-06-20 2002-12-31 동우 화인켐 주식회사 구리 티타늄막의 식각용액 및 그 식각방법
KR20060099089A (ko) * 2005-03-10 2006-09-19 엘지.필립스 엘시디 주식회사 금속배선 식각용액 및 이를 이용한 금속배선 식각방법과 상기 식각용액을 이용한 액정표시장치의 제조방법
KR20100035250A (ko) * 2008-09-26 2010-04-05 테크노세미켐 주식회사 액정표시장치의 구리 및 구리/몰리브데늄 또는 구리/몰리브데늄합금 전극용 식각조성물

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Publication number Publication date
TW201142085A (en) 2011-12-01
CN106995922A (zh) 2017-08-01
TWI608126B (zh) 2017-12-11
CN102834548A (zh) 2012-12-19
WO2011136597A2 (ko) 2011-11-03

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