TWI608126B - 含銅及鈦之金屬層用蝕刻液組成物 (1) - Google Patents
含銅及鈦之金屬層用蝕刻液組成物 (1) Download PDFInfo
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- TWI608126B TWI608126B TW100115193A TW100115193A TWI608126B TW I608126 B TWI608126 B TW I608126B TW 100115193 A TW100115193 A TW 100115193A TW 100115193 A TW100115193 A TW 100115193A TW I608126 B TWI608126 B TW I608126B
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- etching
- copper
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- titanium
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- 238000005530 etching Methods 0.000 title claims description 75
- 239000000203 mixture Substances 0.000 title claims description 67
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 title claims description 28
- 229910052802 copper Inorganic materials 0.000 title claims description 27
- 239000010949 copper Substances 0.000 title claims description 27
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 title claims description 23
- 239000010936 titanium Substances 0.000 title claims description 22
- 229910052719 titanium Inorganic materials 0.000 title claims description 22
- 229910052751 metal Inorganic materials 0.000 title claims description 17
- 239000002184 metal Substances 0.000 title claims description 17
- 239000007788 liquid Substances 0.000 claims description 24
- -1 cyclic amine compound Chemical class 0.000 claims description 12
- ROOXNKNUYICQNP-UHFFFAOYSA-N ammonium persulfate Chemical compound [NH4+].[NH4+].[O-]S(=O)(=O)OOS([O-])(=O)=O ROOXNKNUYICQNP-UHFFFAOYSA-N 0.000 claims description 10
- 150000001805 chlorine compounds Chemical class 0.000 claims description 10
- 235000002639 sodium chloride Nutrition 0.000 claims description 9
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 7
- 150000002222 fluorine compounds Chemical class 0.000 claims description 6
- VLTRZXGMWDSKGL-UHFFFAOYSA-N perchloric acid Chemical compound OCl(=O)(=O)=O VLTRZXGMWDSKGL-UHFFFAOYSA-N 0.000 claims description 6
- JRKICGRDRMAZLK-UHFFFAOYSA-L peroxydisulfate Chemical compound [O-]S(=O)(=O)OOS([O-])(=O)=O JRKICGRDRMAZLK-UHFFFAOYSA-L 0.000 claims description 6
- 229910001870 ammonium persulfate Inorganic materials 0.000 claims description 5
- 150000007522 mineralic acids Chemical class 0.000 claims description 5
- NLXLAEXVIDQMFP-UHFFFAOYSA-N Ammonia chloride Chemical compound [NH4+].[Cl-] NLXLAEXVIDQMFP-UHFFFAOYSA-N 0.000 claims description 4
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 claims description 4
- NBIIXXVUZAFLBC-UHFFFAOYSA-N Phosphoric acid Chemical compound OP(O)(O)=O NBIIXXVUZAFLBC-UHFFFAOYSA-N 0.000 claims description 4
- WCUXLLCKKVVCTQ-UHFFFAOYSA-M Potassium chloride Chemical compound [Cl-].[K+] WCUXLLCKKVVCTQ-UHFFFAOYSA-M 0.000 claims description 4
- FAPWRFPIFSIZLT-UHFFFAOYSA-M Sodium chloride Chemical compound [Na+].[Cl-] FAPWRFPIFSIZLT-UHFFFAOYSA-M 0.000 claims description 4
- QAOWNCQODCNURD-UHFFFAOYSA-N Sulfuric acid Chemical compound OS(O)(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-N 0.000 claims description 4
- 239000002253 acid Substances 0.000 claims description 4
- 229910052500 inorganic mineral Inorganic materials 0.000 claims description 4
- 235000010755 mineral Nutrition 0.000 claims description 4
- 239000011707 mineral Substances 0.000 claims description 4
- NROKBHXJSPEDAR-UHFFFAOYSA-M potassium fluoride Chemical compound [F-].[K+] NROKBHXJSPEDAR-UHFFFAOYSA-M 0.000 claims description 4
- PUZPDOWCWNUUKD-UHFFFAOYSA-M sodium fluoride Chemical compound [F-].[Na+] PUZPDOWCWNUUKD-UHFFFAOYSA-M 0.000 claims description 4
- LCPVQAHEFVXVKT-UHFFFAOYSA-N 2-(2,4-difluorophenoxy)pyridin-3-amine Chemical compound NC1=CC=CN=C1OC1=CC=C(F)C=C1F LCPVQAHEFVXVKT-UHFFFAOYSA-N 0.000 claims description 3
- ULRPISSMEBPJLN-UHFFFAOYSA-N 2h-tetrazol-5-amine Chemical compound NC1=NN=NN1 ULRPISSMEBPJLN-UHFFFAOYSA-N 0.000 claims description 3
- CMGDVUCDZOBDNL-UHFFFAOYSA-N 4-methyl-2h-benzotriazole Chemical compound CC1=CC=CC2=NNN=C12 CMGDVUCDZOBDNL-UHFFFAOYSA-N 0.000 claims description 3
- LDDQLRUQCUTJBB-UHFFFAOYSA-O azanium;hydrofluoride Chemical compound [NH4+].F LDDQLRUQCUTJBB-UHFFFAOYSA-O 0.000 claims description 3
- USHAGKDGDHPEEY-UHFFFAOYSA-L potassium persulfate Chemical compound [K+].[K+].[O-]S(=O)(=O)OOS([O-])(=O)=O USHAGKDGDHPEEY-UHFFFAOYSA-L 0.000 claims description 3
- CHQMHPLRPQMAMX-UHFFFAOYSA-L sodium persulfate Substances [Na+].[Na+].[O-]S(=O)(=O)OOS([O-])(=O)=O CHQMHPLRPQMAMX-UHFFFAOYSA-L 0.000 claims description 3
- ASZZHBXPMOVHCU-UHFFFAOYSA-N 3,9-diazaspiro[5.5]undecane-2,4-dione Chemical compound C1C(=O)NC(=O)CC11CCNCC1 ASZZHBXPMOVHCU-UHFFFAOYSA-N 0.000 claims description 2
- DDFHBQSCUXNBSA-UHFFFAOYSA-N 5-(5-carboxythiophen-2-yl)thiophene-2-carboxylic acid Chemical compound S1C(C(=O)O)=CC=C1C1=CC=C(C(O)=O)S1 DDFHBQSCUXNBSA-UHFFFAOYSA-N 0.000 claims description 2
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 claims description 2
- 229910019142 PO4 Inorganic materials 0.000 claims description 2
- 229910000147 aluminium phosphate Inorganic materials 0.000 claims description 2
- 235000019270 ammonium chloride Nutrition 0.000 claims description 2
- QRUDEWIWKLJBPS-UHFFFAOYSA-N benzotriazole Chemical compound C1=CC=C2N[N][N]C2=C1 QRUDEWIWKLJBPS-UHFFFAOYSA-N 0.000 claims description 2
- 239000012964 benzotriazole Substances 0.000 claims description 2
- 229910000365 copper sulfate Inorganic materials 0.000 claims description 2
- ARUVKPQLZAKDPS-UHFFFAOYSA-L copper(II) sulfate Chemical compound [Cu+2].[O-][S+2]([O-])([O-])[O-] ARUVKPQLZAKDPS-UHFFFAOYSA-L 0.000 claims description 2
- 235000011167 hydrochloric acid Nutrition 0.000 claims description 2
- 150000002823 nitrates Chemical class 0.000 claims description 2
- 229910017604 nitric acid Inorganic materials 0.000 claims description 2
- 235000021317 phosphate Nutrition 0.000 claims description 2
- 150000003013 phosphoric acid derivatives Chemical class 0.000 claims description 2
- 239000001103 potassium chloride Substances 0.000 claims description 2
- 235000011164 potassium chloride Nutrition 0.000 claims description 2
- 239000011698 potassium fluoride Substances 0.000 claims description 2
- 235000003270 potassium fluoride Nutrition 0.000 claims description 2
- 150000003839 salts Chemical class 0.000 claims description 2
- 239000011780 sodium chloride Substances 0.000 claims description 2
- 239000011775 sodium fluoride Substances 0.000 claims description 2
- 235000013024 sodium fluoride Nutrition 0.000 claims description 2
- BFXAWOHHDUIALU-UHFFFAOYSA-M sodium;hydron;difluoride Chemical compound F.[F-].[Na+] BFXAWOHHDUIALU-UHFFFAOYSA-M 0.000 claims description 2
- MHAJPDPJQMAIIY-UHFFFAOYSA-N Hydrogen peroxide Chemical compound OO MHAJPDPJQMAIIY-UHFFFAOYSA-N 0.000 description 8
- 150000001879 copper Chemical class 0.000 description 8
- 229920002120 photoresistant polymer Polymers 0.000 description 8
- CBENFWSGALASAD-UHFFFAOYSA-N Ozone Chemical compound [O-][O+]=O CBENFWSGALASAD-UHFFFAOYSA-N 0.000 description 4
- 238000000034 method Methods 0.000 description 4
- 238000012545 processing Methods 0.000 description 4
- 239000004065 semiconductor Substances 0.000 description 4
- 238000009825 accumulation Methods 0.000 description 3
- 230000000052 comparative effect Effects 0.000 description 3
- 238000011156 evaluation Methods 0.000 description 3
- 239000000758 substrate Substances 0.000 description 3
- 238000012360 testing method Methods 0.000 description 3
- KRHYYFGTRYWZRS-UHFFFAOYSA-M Fluoride anion Chemical compound [F-] KRHYYFGTRYWZRS-UHFFFAOYSA-M 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 239000003795 chemical substances by application Substances 0.000 description 2
- 238000004140 cleaning Methods 0.000 description 2
- 150000001875 compounds Chemical class 0.000 description 2
- 229910052732 germanium Inorganic materials 0.000 description 2
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 2
- 239000011521 glass Substances 0.000 description 2
- 239000007800 oxidant agent Substances 0.000 description 2
- MZLGASXMSKOWSE-UHFFFAOYSA-N tantalum nitride Chemical compound [Ta]#N MZLGASXMSKOWSE-UHFFFAOYSA-N 0.000 description 2
- GVSNQMFKEPBIOY-UHFFFAOYSA-N 4-methyl-2h-triazole Chemical compound CC=1C=NNN=1 GVSNQMFKEPBIOY-UHFFFAOYSA-N 0.000 description 1
- VEXZGXHMUGYJMC-UHFFFAOYSA-M Chloride anion Chemical compound [Cl-] VEXZGXHMUGYJMC-UHFFFAOYSA-M 0.000 description 1
- JPVYNHNXODAKFH-UHFFFAOYSA-N Cu2+ Chemical compound [Cu+2] JPVYNHNXODAKFH-UHFFFAOYSA-N 0.000 description 1
- 229910052769 Ytterbium Inorganic materials 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 239000002738 chelating agent Substances 0.000 description 1
- 239000000460 chlorine Substances 0.000 description 1
- 229910001431 copper ion Inorganic materials 0.000 description 1
- ORTQZVOHEJQUHG-UHFFFAOYSA-L copper(II) chloride Chemical compound Cl[Cu]Cl ORTQZVOHEJQUHG-UHFFFAOYSA-L 0.000 description 1
- XTVVROIMIGLXTD-UHFFFAOYSA-N copper(II) nitrate Chemical compound [Cu+2].[O-][N+]([O-])=O.[O-][N+]([O-])=O XTVVROIMIGLXTD-UHFFFAOYSA-N 0.000 description 1
- 239000008367 deionised water Substances 0.000 description 1
- 229910021641 deionized water Inorganic materials 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 229910003460 diamond Inorganic materials 0.000 description 1
- 239000010432 diamond Substances 0.000 description 1
- 238000001312 dry etching Methods 0.000 description 1
- 238000001035 drying Methods 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 238000001020 plasma etching Methods 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 239000007921 spray Substances 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 150000003467 sulfuric acid derivatives Chemical class 0.000 description 1
- 239000004094 surface-active agent Substances 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- 238000001039 wet etching Methods 0.000 description 1
- NAWDYIZEMPQZHO-UHFFFAOYSA-N ytterbium Chemical compound [Yb] NAWDYIZEMPQZHO-UHFFFAOYSA-N 0.000 description 1
Classifications
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
- C23F1/00—Etching metallic material by chemical means
- C23F1/10—Etching compositions
- C23F1/14—Aqueous compositions
- C23F1/16—Acidic compositions
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
- C23F1/00—Etching metallic material by chemical means
- C23F1/10—Etching compositions
- C23F1/14—Aqueous compositions
- C23F1/42—Aqueous compositions containing a dispersed water-immiscible liquid
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
- C23F1/00—Etching metallic material by chemical means
- C23F1/02—Local etching
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
- C23F1/00—Etching metallic material by chemical means
- C23F1/10—Etching compositions
- C23F1/14—Aqueous compositions
- C23F1/16—Acidic compositions
- C23F1/18—Acidic compositions for etching copper or alloys thereof
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
- C23F1/00—Etching metallic material by chemical means
- C23F1/10—Etching compositions
- C23F1/14—Aqueous compositions
- C23F1/16—Acidic compositions
- C23F1/26—Acidic compositions for etching refractory metals
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
- H01L21/321—After treatment
- H01L21/3213—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer
- H01L21/32133—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only
- H01L21/32134—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only by liquid etching only
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- Chemical & Material Sciences (AREA)
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- Mechanical Engineering (AREA)
- Metallurgy (AREA)
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- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Dispersion Chemistry (AREA)
- ing And Chemical Polishing (AREA)
- Weting (AREA)
Description
本發明係有關一種含銅及鈦之金屬層用蝕刻液組成物，及其係用於閘極、源極/汲極布線，及半導體裝置及平板顯示器之電極，特別為薄膜電晶體(TFT)。
本案請求韓國專利申請案第10-2010-0039822號申請日2010年4月29日及第10-2010-0040567號申請日2010年4月30日之權益，該案全文係以引用方式併入本案。
於半導體裝置及平板顯示器中，在基板上形成金屬布線之製程典型地包括使用濺鍍而形成金屬層、施加光阻、使用曝光及顯影而在一選定區上形成光阻、及進行蝕刻。此外，在各項個別處理步驟之前或之後進行清潔處理步驟。蝕刻處理運用光阻作為遮罩，使得金屬層留在選定區上，及典型地包括使用電漿之乾蝕刻或使用蝕刻液之濕蝕刻。
針對半導體裝置及平板顯示器，特別為TFT，閘極及源極/汲極陣列布線係由包括具有低電阻之鋁製導電層的金屬層組成。但鋁層有問題，原因在於由於在隨後處理步驟中，形成小丘而造成與另一導電層間的短路，及因接觸氧化物層而形成絕緣層。因此，揭示含銅及鈦之雙層作為閘極、源極/汲極陣列布線、及TFT之電極。
但為了蝕刻含銅及鈦之雙層，針對個別層應使用不同蝕刻液組成物。更明確言之，用以蝕刻含銅之金屬層的蝕刻液組成物應主要包括基於過氧化氫之蝕刻液組成物或基於臭氧之蝕刻液組成物。以基於過氧化氫之蝕刻液組成物
為例，蝕刻液組成物可能分解而儲存期短。以基於臭氧之蝕刻液組成物為例，蝕刻速率緩慢且組成物隨著時間之經過變不穩定。
據此，本發明之第一目的係提供一種蝕刻液組成物，其允許進行含銅及鈦之金屬層蝕刻，特別銅/鈦雙層之總濕蝕刻。
本發明之第二目的係提供一種蝕刻液組成物，其甚至不含過氧化氫及/或臭氧而針對銅具有快速蝕刻速率。
本發明之第三目的係提供一種蝕刻液組成物，其可簡化蝕刻處理步驟且改進生產力。
本發明之第四目的係提供一種蝕刻液組成物，其可達成快速蝕刻速率及一致的蝕刻。
本發明之第五目的係提供一種蝕刻液組成物，其不會損壞設備且蝕刻時無需使用昂貴的設備。
本發明之第六目的係提供一種蝕刻液組成物，其可有利地施用至大尺寸顯示面板，如此產生經濟效益。
本發明之第七目的係提供一種蝕刻液組成物，其除了含銅及鈦之金屬層外，可蝕刻用於像素電極之IZO或a-ITO。
本發明之一態樣係提供一種含銅及鈦之金屬層用蝕刻液組成物，以該組成物總重為基準，包括5至20wt%過硫酸鹽，0.01至2wt%氟化合物，1至10wt%選自無機酸、無機酸鹽、及其混合物中之一者或多者，0.3至5wt%環狀胺化合物，0.01至8wt%選自氯化合物及銅鹽中之一者或多者，及剩餘為水。
後文中將針對本發明作詳細說明。
依據本發明，一種含銅及鈦之金屬層用蝕刻液組成物，包括過硫酸鹽；氟化合物；選自無機酸、無機酸鹽、及其混合物中之一者或多者；環狀胺化合物；選自氯化合物及銅鹽中之一者或多者；及水。
包含於依據本發明之蝕刻液組成物中之過硫酸鹽為含銅層蝕刻用之主要氧化劑，以該組成物總重為基準，其用量為5%至20wt%，及較佳7%至18wt%。當此種成分之含量落入於前述範圍內時，含銅層係以適量蝕刻，且蝕刻輪廓變優異。
過硫酸鹽可選自於由過硫酸銨(APS)、過硫酸鈉(SPS)、及過硫酸鉀(PPS)所組成之群組。
包含於依據本發明之蝕刻液組成物中之氟化合物主要係用來蝕刻包含鈦、IZO、或a-ITO之一層，且以組成物總重為基準，係以0.01%至2wt%及較佳0.05%至1wt%之數量添加。當此種成分之含量係落入於前述範圍內時，含鈦層係以適量蝕刻，且蝕刻輪廓變優異。當此種成分之含量係低於前述下限時，含鈦層之蝕刻速率減低，且可能產生蝕刻殘質。相反地，當此種成分之含量係超過前述上限時，基板諸如玻璃及含矽絕緣層可能受損。
氟化合物係指可解離成為氟離子或多原子氟離子之化合物，且係選自於由氟化銨、氟化鈉、氟化鉀、氟化氫銨、氟化氫鈉、及氟化氫鉀所組成之群組。
包含於依據本發明之蝕刻液組成物中之選自於無機酸、無機酸鹽、及其混合物中之一者或多者可氧化與蝕刻
含銅層，且可氧化含鈦層。以組成物總重為基準，選自於無機酸、無機酸鹽、及其混合物中之一者或多者可以1%至10wt%及較佳2%至7wt%之數量使用。當此種成分之含量係落入於前述範圍時，含銅層及含鈦層係以適量蝕刻，且蝕刻輪廓變優異。當此種成分之含量係低於前述下限時，蝕刻速率減低，蝕刻輪廓非期望地降級且產生蝕刻殘質。相反地，當此種成分之含量係超過前述上限時，則可能發生過蝕，光阻可能裂開而形成裂縫，因而蝕刻液可滲入裂縫，造成導線非期望地短路。
無機酸係選自於由硝酸、硫酸、磷酸、及過氯酸所組成之群組。
無機酸鹽係選自於由硝酸鹽、硫酸鹽、磷酸鹽、及過氯酸鹽所組成之群組。
包含於依據本發明之蝕刻液組成物中之環狀胺化合物當蝕刻含銅層時可形成一輪廓。以組成物總重為基準，環狀胺化合物係以0.3%至5wt%及較佳0.5%至3wt%之數量使用。當此種成分之含量係落入於前述範圍時，可形成適當銅蝕刻速率及錐角，且可有效地控制蝕刻程度。
環狀胺化合物係選自於由5-胺基四唑、甲苯基三唑、苯并三唑、及甲基三唑所組成之群組。
依據本發明之蝕刻液組成物所含選自於氯化合物及銅鹽中之一者或多者可以組成物總重為基準，以0.01%至8wt%及較佳0.1%至5wt%之數量使用。當此種成分之含量係落入於前述範圍時，可更有效地形成錐角。當因處理的板片數目累積而蝕刻液的蝕刻能力達到極限時，可防止側邊蝕刻的增加。
氯化合物為用以蝕刻含銅層之助氧化劑。氯化合物為可解離成為氯離子之化合物，且係選自於由氫氯酸、氯化鈉、氯化鉀、及氯化銨(NH4Cl)所組成之群組。
當因處理的板片數目累積而蝕刻液的蝕刻能力達到極限時，銅鹽可防止側邊蝕刻的增加。
銅鹽可選自於由氯化銅、硫酸銅、及硝酸銅所組成之群組。
於選自於氯化合物及銅鹽中之一者或多者中，當只有氯化合物含在依據本發明之蝕刻液組成物時，其可以組成物總重為基準，以0.1%至5wt%及較佳0.5%至3wt%之數量使用。當此種成分之含量係落入於前述範圍時，可更有效地形成錐角。
於選自於氯化合物及銅鹽中之一者或多者中，當只有銅鹽含在依據本發明之蝕刻液組成物時，其可以組成物總重為基準，以0.01%至3wt%及較佳0.1%至1wt%之數量使用。若此種成分之含量係係低於前述下限，則當因處理的板片數目累積而蝕刻液的蝕刻能力達到極限時，難以防止側邊蝕刻的增加。
相反地，若其含量超過前述上限，則蝕刻液組成物內的銅離子濃度增加，隨著時間之經過，非期望地減少處理的板片數目。
包含於依據本發明之蝕刻液組成物中之水為去離子水，其係適用於半導體處理，及其具有至少18MΩ．cm之電阻係數。以組成物總重為基準，添加水作為剩餘，使得蝕刻液組成物總重變成100wt%。
除了前述成分外，依據本發明之蝕刻液組成物可包含
選自於蝕刻控制劑、界面活性劑、螯合劑及防蝕劑中之一者或多者。
列舉下列實施例及測試例來舉例說明本發明，但非解譯為限制本發明，而可提供本發明之更明白瞭解。
實施例1至6、比較例1至4：蝕刻液組成物之製備
以下表1顯示數量，製備180公斤的蝕刻液組成物。
APS；過硫酸銨ABF；氟化氫銨ATZ：5-胺基四唑
測試例：蝕刻液組成物性質之評估
氮化矽(SiNx)層沈積在玻璃上，銅層形成在氮化矽層上，而鈦層形成在銅層上。光阻係以預定圖案施加在鈦層上，所形成的基板使用鑽石刀切割成550毫米x 650毫米，
如此製作成試樣。
<蝕刻性質之評估>
實施例1至6及比較例1至4各自之蝕刻液組成物導入噴灑型蝕刻裝置內(蝕刻器(ETCHER)(TFT)，得自西門子公司(SEMES))，然後溫熱至25℃溫度。隨後讓溫度達到30±0.1℃，接著進行蝕刻。總蝕刻時間係基於40% EPD設定。試樣置於裝置內及噴灑以該組成物。蝕刻完成後，試樣以水清潔及使用熱風乾燥器乾燥，隨後光阻(PR)係使用光阻剝離劑去除。清潔與乾燥後，使用掃描電子顯微鏡(SEM)(S-4700，得自日立公司(HITACHI))評估蝕刻性質。結果顯示於下表2。
◎：優異(CD扭斜：1微米，錐角：40度至60度)
○：良好(CD扭斜：1.5微米，錐角：30度至60度)
△：普通(CD扭斜：2微米，錐角：30度至60度)
X：不佳(金屬層損耗及殘質產生)
由表2可明顯得知：當使用實施例1至6各自之蝕刻液組成物進行蝕刻時，蝕刻性質優異。但當使用比較例1至4各自之蝕刻液組成物進行蝕刻時，蝕刻性質比使用實施例1至6之組成物時低劣。
<處理板片數目之評估>
參考蝕刻係使用實施例5及6各自之蝕刻液組成物進行，進一步添加及完全溶解1000ppm銅粉末。隨後再度進行蝕刻測試，比較參考蝕刻，側邊蝕刻變化超過0.2微米的情況評比為不佳。結果顯示於下表3。
◎：優異(當隨著時間而處理的板片數目增加時側邊蝕刻變化為0.2微米或以下)
X：不佳(當隨著時間而處理的板片數目增加時側邊蝕刻變化超過0.2微米)
由表3可明顯得知：當使用依據本發明實施例6之組成物時處理的板片數目遠較高。
如前文所述，本發明提供一種用於含銅及鈦之金屬層
之蝕刻液組成物。依據本發明，蝕刻液組成物可濕蝕刻含銅及鈦之金屬層，及更明確言之，銅/鈦雙層，如此簡化蝕刻處理步驟及改良生產力。又依據本發明，蝕刻液組成物具有快速蝕刻率且允許形成均一蝕刻，如此提供優異蝕刻性質。又依據本發明，蝕刻液組成物不會損壞設備且蝕刻時無需昂貴設備，可有利地施用至大型顯示面板，如此產生經濟效益。又依據本發明，除了含銅及鈦之金屬層外，蝕刻液組成物可蝕刻用於像素電極之IZO或a-ITO。又，於含銅及鈦之金屬層用於源/汲電極而IZO或a-ITO用於像素電極之情況下，依據本發明之蝕刻液組成物可一起蝕刻源/汲電極及像素電極。又依據本發明，蝕刻液組成物甚至未含過氧化氫及/或臭氧即可針對銅達成快速蝕刻速率。
雖然已經為了例示說明目的而揭示本發明之多個態樣及具體例，但熟諳技藝人士瞭解可未悖離如隨附之申請專利範圍揭示之本發明之範圍及精髓而可能做出多項修改、添加、及取代。
Claims (5)
- 一種含銅及鈦之金屬層用蝕刻液組成物，其以該組成物總重為基準，係包括：5至20wt%過硫酸鹽；0.01至2wt%氟化合物；1至10wt%選自無機酸、無機酸鹽、及其混合物中之一者或多者；0.3至5wt%環狀胺化合物；0.5至3wt%氯化合物及0.1至1wt%硫酸銅；及剩餘為水；其中該無機酸係選自於由硝酸、硫酸、磷酸、及過氯酸所組成之群組，及該無機酸鹽係選自於由硝酸鹽、磷酸鹽、及過氯酸鹽所組成之群組。
- 如申請專利範圍第1項之蝕刻液組成物，其中該過硫酸鹽係選自於由過硫酸銨、過硫酸鈉、及過硫酸鉀所組成之群組。
- 如申請專利範圍第1項之蝕刻液組成物，其中該氟化合物係選自於由氟化銨、氟化鈉、氟化鉀、氟化氫銨、氟化氫鈉、及氟化氫鉀所組成之群組。
- 如申請專利範圍第1項之蝕刻液組成物，其中該環狀胺化合物係選自於由5-胺基四唑、甲苯基三唑、苯并三唑、及甲基苯并三唑所組成之群組。
- 如申請專利範圍第1項之蝕刻液組成物，其中該氯化合物係選自於由氫氯酸、氯化鈉、氯化鉀、及氯化銨所組成之群組。
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| Publication number | Priority date | Publication date | Assignee | Title |
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| US5298117A (en) * | 1993-07-19 | 1994-03-29 | At&T Bell Laboratories | Etching of copper-containing devices |
| CN1117090A (zh) * | 1994-03-04 | 1996-02-21 | 美克株式会社 | 铜及铜合金的表面处理剂 |
| CN101265579A (zh) * | 2007-03-15 | 2008-09-17 | 东进世美肯株式会社 | 薄膜晶体管液晶显示装置的蚀刻液组合物 |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
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| CN101265579A (zh) * | 2007-03-15 | 2008-09-17 | 东进世美肯株式会社 | 薄膜晶体管液晶显示装置的蚀刻液组合物 |
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