JP2010503211A5 - - Google Patents
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- JP2010503211A5 JP2010503211A5 JP2009526691A JP2009526691A JP2010503211A5 JP 2010503211 A5 JP2010503211 A5 JP 2010503211A5 JP 2009526691 A JP2009526691 A JP 2009526691A JP 2009526691 A JP2009526691 A JP 2009526691A JP 2010503211 A5 JP2010503211 A5 JP 2010503211A5
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- Prior art keywords
- chemical mechanical
- polishing composition
- mechanical polishing
- adjusting agent
- group
- Prior art date
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- 238000005498 polishing Methods 0.000 claims 33
- 239000000126 substance Substances 0.000 claims 21
- 239000003795 chemical substances by application Substances 0.000 claims 12
- 229910052751 metal Inorganic materials 0.000 claims 8
- 239000002184 metal Substances 0.000 claims 8
- 239000003607 modifier Substances 0.000 claims 8
- 239000007800 oxidant agent Substances 0.000 claims 8
- 230000001590 oxidative Effects 0.000 claims 6
- 239000000758 substrate Substances 0.000 claims 5
- 239000003082 abrasive agent Substances 0.000 claims 4
- 239000000969 carrier Substances 0.000 claims 4
- MHAJPDPJQMAIIY-UHFFFAOYSA-N hydrogen peroxide Chemical compound OO MHAJPDPJQMAIIY-UHFFFAOYSA-N 0.000 claims 4
- XEEYBQQBJWHFJM-UHFFFAOYSA-N iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 claims 4
- 239000007788 liquid Substances 0.000 claims 4
- IPPWILKGXFOXHO-UHFFFAOYSA-N Chloranilic acid Chemical compound OC1=C(Cl)C(=O)C(O)=C(Cl)C1=O IPPWILKGXFOXHO-UHFFFAOYSA-N 0.000 claims 3
- XMBWDFGMSWQBCA-UHFFFAOYSA-M iodide Chemical compound [I-] XMBWDFGMSWQBCA-UHFFFAOYSA-M 0.000 claims 3
- 125000004151 quinonyl group Chemical group 0.000 claims 3
- 150000003839 salts Chemical class 0.000 claims 3
- 239000011780 sodium chloride Substances 0.000 claims 3
- FRASJONUBLZVQX-UHFFFAOYSA-N 1,4-Naphthoquinone Chemical compound C1=CC=C2C(=O)C=CC(=O)C2=C1 FRASJONUBLZVQX-UHFFFAOYSA-N 0.000 claims 2
- LFTLOKWAGJYHHR-UHFFFAOYSA-N N-Methylmorpholine N-oxide Chemical group CN1(=O)CCOCC1 LFTLOKWAGJYHHR-UHFFFAOYSA-N 0.000 claims 2
- VLTRZXGMWDSKGL-UHFFFAOYSA-M Perchlorate Chemical group [O-]Cl(=O)(=O)=O VLTRZXGMWDSKGL-UHFFFAOYSA-M 0.000 claims 2
- SXDBWCPKPHAZSM-UHFFFAOYSA-M bromate Chemical compound [O-]Br(=O)=O SXDBWCPKPHAZSM-UHFFFAOYSA-M 0.000 claims 2
- 150000004449 dihydroxybenzoquinones Chemical group 0.000 claims 2
- 239000001257 hydrogen Substances 0.000 claims 2
- UFHFLCQGNIYNRP-UHFFFAOYSA-N hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 claims 2
- 229910052739 hydrogen Inorganic materials 0.000 claims 2
- ICIWUVCWSCSTAQ-UHFFFAOYSA-M iodate Chemical compound [O-]I(=O)=O ICIWUVCWSCSTAQ-UHFFFAOYSA-M 0.000 claims 2
- 229910052740 iodine Inorganic materials 0.000 claims 2
- 229910052742 iron Inorganic materials 0.000 claims 2
- NPDODHDPVPPRDJ-UHFFFAOYSA-N permanganate Chemical compound [O-][Mn](=O)(=O)=O NPDODHDPVPPRDJ-UHFFFAOYSA-N 0.000 claims 2
- JRKICGRDRMAZLK-UHFFFAOYSA-L peroxydisulfate Chemical compound [O-]S(=O)(=O)OOS([O-])(=O)=O JRKICGRDRMAZLK-UHFFFAOYSA-L 0.000 claims 2
- AZQWKYJCGOJGHM-UHFFFAOYSA-N 1,4-Benzoquinone Chemical compound O=C1C=CC(=O)C=C1 AZQWKYJCGOJGHM-UHFFFAOYSA-N 0.000 claims 1
- IKQCSJBQLWJEPU-UHFFFAOYSA-N 2,5-dihydroxybenzenesulfonic acid Chemical compound OC1=CC=C(O)C(S(O)(=O)=O)=C1 IKQCSJBQLWJEPU-UHFFFAOYSA-N 0.000 claims 1
- GAZYLEJQUACYIG-UHFFFAOYSA-N 2-amino-9,10-dioxoanthracene-1-sulfonic acid Chemical compound C1=CC=C2C(=O)C3=C(S(O)(=O)=O)C(N)=CC=C3C(=O)C2=C1 GAZYLEJQUACYIG-UHFFFAOYSA-N 0.000 claims 1
- PZTGRDMCBZUJDL-UHFFFAOYSA-N 3,4-dioxonaphthalene-1-sulfonic acid Chemical group C1=CC=C2C(S(=O)(=O)O)=CC(=O)C(=O)C2=C1 PZTGRDMCBZUJDL-UHFFFAOYSA-N 0.000 claims 1
- OZTBHAGJSKTDGM-UHFFFAOYSA-N 9,10-dioxoanthracene-1,5-disulfonic acid Chemical compound O=C1C=2C(S(=O)(=O)O)=CC=CC=2C(=O)C2=C1C=CC=C2S(O)(=O)=O OZTBHAGJSKTDGM-UHFFFAOYSA-N 0.000 claims 1
- IJNPIHLZSZCGOC-UHFFFAOYSA-N 9,10-dioxoanthracene-1,8-disulfonic acid Chemical compound O=C1C2=CC=CC(S(O)(=O)=O)=C2C(=O)C2=C1C=CC=C2S(=O)(=O)O IJNPIHLZSZCGOC-UHFFFAOYSA-N 0.000 claims 1
- RZVHIXYEVGDQDX-UHFFFAOYSA-N Anthraquinone Chemical compound C1=CC=C2C(=O)C3=CC=CC=C3C(=O)C2=C1 RZVHIXYEVGDQDX-UHFFFAOYSA-N 0.000 claims 1
- LSXWFXONGKSEMY-UHFFFAOYSA-N Di-tert-butyl peroxide Chemical compound CC(C)(C)OOC(C)(C)C LSXWFXONGKSEMY-UHFFFAOYSA-N 0.000 claims 1
- OCATYIAKPYKMPG-UHFFFAOYSA-M Potassium bromate Chemical compound [K+].[O-]Br(=O)=O OCATYIAKPYKMPG-UHFFFAOYSA-M 0.000 claims 1
- JLKDVMWYMMLWTI-UHFFFAOYSA-M Potassium iodate Chemical compound [K+].[O-]I(=O)=O JLKDVMWYMMLWTI-UHFFFAOYSA-M 0.000 claims 1
- OTYBMLCTZGSZBG-UHFFFAOYSA-L Potassium sulfate Chemical compound [K+].[K+].[O-]S([O-])(=O)=O OTYBMLCTZGSZBG-UHFFFAOYSA-L 0.000 claims 1
- MSSUFHMGCXOVBZ-UHFFFAOYSA-N anthraquinone-2,6-disulfonic acid Chemical compound OS(=O)(=O)C1=CC=C2C(=O)C3=CC(S(=O)(=O)O)=CC=C3C(=O)C2=C1 MSSUFHMGCXOVBZ-UHFFFAOYSA-N 0.000 claims 1
- 150000004056 anthraquinones Chemical group 0.000 claims 1
- CPELXLSAUQHCOX-UHFFFAOYSA-M bromide Chemical compound [Br-] CPELXLSAUQHCOX-UHFFFAOYSA-M 0.000 claims 1
- VZDYWEUILIUIDF-UHFFFAOYSA-J cerium(4+);disulfate Chemical compound [Ce+4].[O-]S([O-])(=O)=O.[O-]S([O-])(=O)=O VZDYWEUILIUIDF-UHFFFAOYSA-J 0.000 claims 1
- 229910000355 cerium(IV) sulfate Inorganic materials 0.000 claims 1
- VEXZGXHMUGYJMC-UHFFFAOYSA-M chloride anion Chemical compound [Cl-] VEXZGXHMUGYJMC-UHFFFAOYSA-M 0.000 claims 1
- 125000000524 functional group Chemical group 0.000 claims 1
- 150000004820 halides Chemical class 0.000 claims 1
- 239000011630 iodine Substances 0.000 claims 1
- PNDPGZBMCMUPRI-UHFFFAOYSA-N iodine Chemical compound II PNDPGZBMCMUPRI-UHFFFAOYSA-N 0.000 claims 1
- 150000002739 metals Chemical class 0.000 claims 1
- GRYLNZFGIOXLOG-UHFFFAOYSA-N nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 claims 1
- 239000001230 potassium iodate Substances 0.000 claims 1
- 229940093930 potassium iodate Drugs 0.000 claims 1
- 235000006666 potassium iodate Nutrition 0.000 claims 1
- WRIRWRKPLXCTFD-UHFFFAOYSA-N propanediamide Chemical compound NC(=O)CC(N)=O WRIRWRKPLXCTFD-UHFFFAOYSA-N 0.000 claims 1
- WRTMQOHKMFDUKX-UHFFFAOYSA-N triiodide Chemical compound I[I-]I WRTMQOHKMFDUKX-UHFFFAOYSA-N 0.000 claims 1
Claims (20)
- (a)砥材、
(b)標準水素電極に対して0.34Vより低い標準還元電位を有する第一の金属研磨速度調整剤であり、ここではキノンである第一の金属研磨速度調整剤、
(c)標準水素電極に対して0.34Vより高い標準還元電位を有する第二の金属研磨速度調整剤、
及び
(d)液体キャリア
を含む、化学機械研磨組成物。 - (a)砥材、
(b)キノン部分を含む有機酸化剤である第一の金属研磨速度調整剤、
(c)ヨウ化物、ヨウ素、I2・マロンアミド3、及び三ヨウ化物からなる群から選択される第二の金属研磨速度調整剤、
及び
(d)液体キャリア
を含む、化学機械研磨組成物。 - (a)砥材、
(b)キノン部分を含む有機酸化剤である第一の金属研磨速度調整剤、
(c)該第一の調整剤の濃度よりも低い濃度で存在する酸化剤である第二の金属研磨速度調整剤、
及び
(d)液体キャリア
を含む、化学機械研磨組成物。 - 該第一の調整剤が1つ以上の官能基を有するアントラキノンである請求項1〜3のいずれか一項の化学機械研磨組成物。
- アントラキノンが、9,10−アントラキノン−1,8−ジスルホン酸、9,10−アントラキノン−1,5−ジスルホン酸、9,10−アントラキノン−2,6−ジスルホン酸、及びそれらの塩からなる群から選択される請求項4の化学機械研磨組成物。
- 該第二の調整剤が有機物の調整剤である請求項1または3の化学機械研磨組成物。
- 該第二の調整剤がジヒドロキシベンゾキノン、ナフトキノン、クロラニル酸、及びジクロロインドフェノールからなる群から選択される請求項6の化学機械研磨組成物。
- 該第二の調整剤がn−メチルモルホリン−N−オキシドとt−ブチルペルオキシドからなる群から選択される請求項6の化学機械研磨組成物。
- 該第二の調整剤が無機物の調整剤である請求項1または3の化学機械研磨組成物。
- 該第二の調整剤が過酸化水素、ヨウ素酸塩、過硫酸塩、過マンガン酸塩、I2、鉄(III )の無機塩、鉄(III )の有機塩、及び過酸化モノ硫酸カリウムからなる群から選択される請求項9の化学機械研磨組成物。
- 該第二の調整剤が過塩素酸塩、臭素酸塩、及び硫酸セリウム(IV)からなる群から選択される請求項9の化学機械研磨組成物。
- 塩化物と臭化物からなる群から選ばれるハロゲン化物をさらに含む請求項1または3の化学機械研磨組成物。
- ヨウ化物をさらに含む請求項1または3の化学機械研磨組成物。
- 該第二の調整剤がI2・マロンアミド3である請求項2の化学機械研磨組成物。
- 該第二の調整剤がヨウ化物である請求項2の化学機械研磨組成物。
- 過酸化水素、ヨウ素酸塩、過硫酸塩、過マンガン酸塩、臭素酸塩、過酸化モノ硫酸カリウム、クロラニル酸、及びn−メチルモルホリン−N−オキシドからなる群から選択される酸化剤をさらに含む請求項2の化学機械研磨組成物。
- 該第一の調整剤の濃度が1〜60mmolである請求項3の化学機械研磨組成物。
- 該第二の調整剤がジヒドロキシベンゾキノン、ナフトキノン、クロラニル酸、ジクロロインドフェノール、及びI2・マロンアミド3からなる群から選択される請求項3の化学機械研磨組成物。
- (a)砥材、
(b)1,2−ナフトキノン−4スルホン酸、アミノアントラキノンスルホン酸、又はハイドロキノンスルホン酸ではないことを条件するキノン部分を含む有機酸化剤である第一の酸化剤、
(c)第一の酸化剤と同じでなく、ヨウ素酸カリウム、又は硝酸ではないことを条件とする第二の酸化剤、
及び
(d)液体キャリア
を含む、化学機械研磨組成物。 - (i)少なくとも2つの金属を有する基材を用意すること、
(ii)請求項1〜19のいずれか一項の化学機械研磨組成物を用意すること、
(iii )研磨パッドと該研磨組成物を該基材に接触させること、
(iv)該研磨パッドと該研磨組成物に対して、該基材を動かすこと、
(v)少なくとも該基材の一部を磨り減らして該基材を研磨すること、
を含む、化学機械研磨の方法。
Applications Claiming Priority (5)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US84100506P | 2006-08-30 | 2006-08-30 | |
US60/841,005 | 2006-08-30 | ||
US11/673,399 | 2007-02-09 | ||
US11/673,399 US7803203B2 (en) | 2005-09-26 | 2007-02-09 | Compositions and methods for CMP of semiconductor materials |
PCT/US2007/018980 WO2008027421A1 (en) | 2006-08-30 | 2007-08-29 | Compositions and methods for cmp of semiconductor materials |
Publications (3)
Publication Number | Publication Date |
---|---|
JP2010503211A JP2010503211A (ja) | 2010-01-28 |
JP2010503211A5 true JP2010503211A5 (ja) | 2010-10-14 |
JP5313900B2 JP5313900B2 (ja) | 2013-10-09 |
Family
ID=39136242
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2009526691A Active JP5313900B2 (ja) | 2006-08-30 | 2007-08-29 | 半導体材料のcmpのための組成物と研磨方法 |
Country Status (6)
Country | Link |
---|---|
US (2) | US7803203B2 (ja) |
JP (1) | JP5313900B2 (ja) |
KR (1) | KR101356222B1 (ja) |
CN (1) | CN101506325B (ja) |
TW (1) | TWI414573B (ja) |
WO (1) | WO2008027421A1 (ja) |
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2007
- 2007-02-09 US US11/673,399 patent/US7803203B2/en not_active Expired - Fee Related
- 2007-08-24 TW TW096131529A patent/TWI414573B/zh active
- 2007-08-29 WO PCT/US2007/018980 patent/WO2008027421A1/en active Application Filing
- 2007-08-29 KR KR1020097003970A patent/KR101356222B1/ko active IP Right Grant
- 2007-08-29 CN CN200780031740XA patent/CN101506325B/zh active Active
- 2007-08-29 JP JP2009526691A patent/JP5313900B2/ja active Active
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2010
- 2010-08-11 US US12/854,470 patent/US8529680B2/en active Active
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