JP2009528688A5 - - Google Patents

Download PDF

Info

Publication number
JP2009528688A5
JP2009528688A5 JP2008556786A JP2008556786A JP2009528688A5 JP 2009528688 A5 JP2009528688 A5 JP 2009528688A5 JP 2008556786 A JP2008556786 A JP 2008556786A JP 2008556786 A JP2008556786 A JP 2008556786A JP 2009528688 A5 JP2009528688 A5 JP 2009528688A5
Authority
JP
Japan
Prior art keywords
layer
wafer
support
elastomeric material
separation
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP2008556786A
Other languages
English (en)
Japanese (ja)
Other versions
JP5335443B2 (ja
JP2009528688A (ja
Filing date
Publication date
Priority claimed from DE102006009394.1A external-priority patent/DE102006009394B4/de
Priority claimed from DE102006009353.4A external-priority patent/DE102006009353B4/de
Priority claimed from DE102006048799.0A external-priority patent/DE102006048799B4/de
Priority claimed from DE102006048800.8A external-priority patent/DE102006048800B4/de
Application filed filed Critical
Priority claimed from PCT/EP2007/051952 external-priority patent/WO2007099146A1/de
Publication of JP2009528688A publication Critical patent/JP2009528688A/ja
Publication of JP2009528688A5 publication Critical patent/JP2009528688A5/ja
Application granted granted Critical
Publication of JP5335443B2 publication Critical patent/JP5335443B2/ja
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

JP2008556786A 2006-03-01 2007-03-01 ウエハ支持構造体及び該ウエハ支持構造体の製造に用いられる層システム Active JP5335443B2 (ja)

Applications Claiming Priority (9)

Application Number Priority Date Filing Date Title
DE102006009394.1A DE102006009394B4 (de) 2006-03-01 2006-03-01 Mehrlagenschichtsystem mit einer Schicht als Trennschicht zum Trägern von dünnen Wafern bei der Halbleiterherstellung, Verwendung des Schichtsystems beim und Verfahren zum Abdünnen eines Wafers
DE102006009394.1 2006-03-01
DE102006009353.4 2006-03-01
DE102006009353.4A DE102006009353B4 (de) 2006-03-01 2006-03-01 Mehrlagenschichtsystem zum Trägern von dünnen Wafern bei der Halbleiterherstellung mit der Eigenschaft zum Haltern mittels elektrostatischer Aufladung
DE102006048799.0A DE102006048799B4 (de) 2006-10-16 2006-10-16 Verfahren und Einrichtung zum Ablösen eines dünnen Wafers oder bereits vereinzelter Bauelemente eines dünnen Wafers von einem Träger
DE102006048799.0 2006-10-16
DE102006048800.8A DE102006048800B4 (de) 2006-10-16 2006-10-16 Mehrlagenschichtsystem mit hartem Träger zum Trägern von dünnen Wafern bei der Halbleiterherstellung
DE102006048800.8 2006-10-16
PCT/EP2007/051952 WO2007099146A1 (de) 2006-03-01 2007-03-01 Verfahren zum bearbeiten insbesondere dünnen der rückseite eines wafers, wafer-träger-anordnung hierfür und verfahren zur herstellung einer solchen wafer-träger-anordnung

Publications (3)

Publication Number Publication Date
JP2009528688A JP2009528688A (ja) 2009-08-06
JP2009528688A5 true JP2009528688A5 (enExample) 2010-04-22
JP5335443B2 JP5335443B2 (ja) 2013-11-06

Family

ID=37963755

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2008556786A Active JP5335443B2 (ja) 2006-03-01 2007-03-01 ウエハ支持構造体及び該ウエハ支持構造体の製造に用いられる層システム

Country Status (5)

Country Link
US (1) US8911583B2 (enExample)
EP (1) EP1994554B1 (enExample)
JP (1) JP5335443B2 (enExample)
KR (1) KR101458143B1 (enExample)
WO (1) WO2007099146A1 (enExample)

Families Citing this family (45)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
PT1568071T (pt) * 2002-11-29 2019-06-17 Fraunhofer Ges Forschung Pastilha com camada de separação e camada de suporte e seu processo de fabrico
KR101004849B1 (ko) * 2008-09-02 2010-12-28 삼성전기주식회사 박막소자 제조방법
DE102008044200B4 (de) 2008-11-28 2012-08-23 Thin Materials Ag Bonding-Verfahren
DE102008055155A1 (de) 2008-12-23 2010-07-01 Thin Materials Ag Trennverfahren für ein Schichtsystem umfassend einen Wafer
JP2012064710A (ja) * 2010-09-15 2012-03-29 Asahi Glass Co Ltd 半導体素子の製造方法
US8696864B2 (en) 2012-01-26 2014-04-15 Promerus, Llc Room temperature debonding composition, method and stack
DE102012101237A1 (de) * 2012-02-16 2013-08-22 Ev Group E. Thallner Gmbh Verfahren zum temporären Verbinden eines Produktsubstrats mit einem Trägersubstrat
JP2013211505A (ja) 2012-03-02 2013-10-10 Fujifilm Corp 半導体装置の製造方法
US10186458B2 (en) * 2012-07-05 2019-01-22 Infineon Technologies Ag Component and method of manufacturing a component using an ultrathin carrier
JP5909460B2 (ja) 2012-09-28 2016-04-26 富士フイルム株式会社 半導体装置製造用仮接着剤、並びに、それを用いた接着性支持体、及び、半導体装置の製造方法。
JP5982248B2 (ja) 2012-09-28 2016-08-31 富士フイルム株式会社 半導体装置製造用仮接合層、積層体、及び、半導体装置の製造方法。
JP2014070191A (ja) 2012-09-28 2014-04-21 Fujifilm Corp 半導体装置製造用仮接着剤、並びに、それを用いた接着性支持体、及び、半導体装置の製造方法。
US9269623B2 (en) 2012-10-25 2016-02-23 Rohm And Haas Electronic Materials Llc Ephemeral bonding
US9331230B2 (en) * 2012-10-30 2016-05-03 Cbrite Inc. LED die dispersal in displays and light panels with preserving neighboring relationship
KR102075635B1 (ko) * 2013-01-03 2020-03-02 삼성전자주식회사 웨이퍼 지지 구조물, 웨이퍼 지지 구조물을 포함하는 반도체 패키지의 중간 구조물, 및 중간 구조물을 이용한 반도체 패키지의 제조 방법
KR102309244B1 (ko) 2013-02-20 2021-10-05 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치
JP6114596B2 (ja) 2013-03-26 2017-04-12 富士フイルム株式会社 半導体装置製造用仮接合用積層体、および、半導体装置の製造方法
JP6050170B2 (ja) 2013-03-27 2016-12-21 富士フイルム株式会社 半導体装置製造用仮接合用積層体、および、半導体装置の製造方法
JP5975918B2 (ja) 2013-03-27 2016-08-23 富士フイルム株式会社 半導体装置製造用仮接合用積層体、および、半導体装置の製造方法
JP6182491B2 (ja) 2013-08-30 2017-08-16 富士フイルム株式会社 積層体およびその応用
US9315696B2 (en) * 2013-10-31 2016-04-19 Dow Global Technologies Llc Ephemeral bonding
US10157766B2 (en) 2014-03-19 2018-12-18 Samsung Electronics Co., Ltd. Method of fabricating a semiconductor device
TWI667311B (zh) 2014-06-13 2019-08-01 日商富士軟片股份有限公司 Temporary fixing of the adhesive, adhesive film, adhesive support, laminate and adhesive kit
TWI661935B (zh) 2014-06-13 2019-06-11 日商富士軟片股份有限公司 暫時接著用積層體、暫時接著用積層體的製造方法以及帶有元件晶圓的積層體
TW201601918A (zh) 2014-06-13 2016-01-16 Fujifilm Corp 暫時接著用積層體、暫時接著用積層體的製造方法以及帶有元件晶圓的積層體
JP2016021560A (ja) * 2014-06-20 2016-02-04 株式会社半導体エネルギー研究所 剥離装置
DE102014219095A1 (de) * 2014-09-22 2016-03-24 Nissan Chemical Industries, Ltd. Wafer-Träger-Anordnung
US10141216B2 (en) * 2014-10-22 2018-11-27 Promerus, Llc Room temperature debondable and thermally curable compositions
US9644118B2 (en) 2015-03-03 2017-05-09 Dow Global Technologies Llc Method of releasably attaching a semiconductor substrate to a carrier
EP3280589B1 (en) * 2015-04-08 2021-08-11 Nitto Denko Corporation Sheet, moisture proof method of adherend using the sheet and corrosion proof method of metal plate using the sheet
FR3038128B1 (fr) * 2015-06-26 2018-09-07 Commissariat A L'energie Atomique Et Aux Energies Alternatives Procede de fabrication d'un dispositif electronique
DE112015006857B4 (de) 2015-08-31 2023-10-05 Disco Corporation Verfahren zum Bearbeiten eines Wafers und Schutzabdeckung zur Verwendung in diesem Verfahren
EP3477685A4 (en) 2016-06-22 2020-07-01 Nissan Chemical Corporation POLYDIMETHYLSILOXANE ADHESIVE
KR102718731B1 (ko) 2017-05-24 2024-10-18 닛산 가가쿠 가부시키가이샤 에폭시변성 폴리실록산을 함유하는 가접착제
WO2019009365A1 (ja) 2017-07-06 2019-01-10 日産化学株式会社 フェニル基含有ポリシロキサンを含有する仮接着剤
CN111684584A (zh) * 2018-02-01 2020-09-18 康宁股份有限公司 用于卷形式的电子封装和其他应用的单一化基材
JP7424969B2 (ja) 2018-05-01 2024-01-30 日産化学株式会社 耐熱性重合禁止剤を含むポリシロキサンを含有する仮接着剤
EP3882954A4 (en) 2018-11-16 2022-07-27 Nissan Chemical Corporation LAMINATE REMOVAL METHOD, LAMINATE, AND LAMINATE PRODUCTION METHOD
TW202428830A (zh) 2018-11-16 2024-07-16 日商日產化學股份有限公司 紅外線剝離用接著劑組成物、積層體、積層體之製造方法及剝離方法
EP3888909A4 (en) 2018-11-28 2022-08-24 Nissan Chemical Corporation ADHESIVE COMPOSITION, LAYERING PRODUCT AND METHOD OF MANUFACTURING A LAYERING PRODUCT AND METHOD OF THICKNESSING A SEMICONDUCTOR SUBSTRATE
WO2020185292A1 (en) * 2019-03-11 2020-09-17 Hrl Laboratories, Llc Method to protect die during metal-embedded chip assembly (meca) process
US11735464B1 (en) * 2020-08-21 2023-08-22 American Semiconductor, Inc. Method of demounting thin semiconductor devices
EP4254469A4 (en) * 2020-11-30 2024-10-23 Nissan Chemical Corporation LAMINATE, METHOD FOR MANUFACTURING LAMINATE, AND METHOD FOR MANUFACTURING SEMICONDUCTOR SUBSTRATE
US20240222180A1 (en) 2021-03-26 2024-07-04 Nissan Chemical Corporation Laminate, method for manufacturing laminate, and method for manufacturing semiconductor substrate
WO2023182138A1 (ja) 2022-03-24 2023-09-28 日産化学株式会社 ポリエーテル変性シロキサンを含有する接着剤

Family Cites Families (20)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6828812B2 (en) 1991-06-04 2004-12-07 Micron Technology, Inc. Test apparatus for testing semiconductor dice including substrate with penetration limiting contacts for making electrical connections
US5548091A (en) * 1993-10-26 1996-08-20 Tessera, Inc. Semiconductor chip connection components with adhesives and methods for bonding to the chip
US6071795A (en) * 1998-01-23 2000-06-06 The Regents Of The University Of California Separation of thin films from transparent substrates by selective optical processing
US6159827A (en) * 1998-04-13 2000-12-12 Mitsui Chemicals, Inc. Preparation process of semiconductor wafer
US6393759B1 (en) * 2000-01-21 2002-05-28 Jeffrey K. Brown Electronic fly trap apparatus with cover
KR100404229B1 (ko) * 2001-02-06 2003-11-03 앰코 테크놀로지 코리아 주식회사 반도체 칩 제조방법
KR20030038048A (ko) * 2001-11-08 2003-05-16 삼성전자주식회사 웨이퍼 이면 연마를 위한 라미네이터 장비 및 그 운용방법
JP4312419B2 (ja) * 2002-05-09 2009-08-12 リンテック株式会社 半導体ウエハの加工方法
US6923881B2 (en) * 2002-05-27 2005-08-02 Fuji Photo Film Co., Ltd. Method for producing organic electroluminescent device and transfer material used therein
JP2004043814A (ja) 2002-07-15 2004-02-12 Dow Corning Toray Silicone Co Ltd シリコーン系接着性シート、半導体チップと該チップ取付部の接着方法、および半導体装置
PT1568071T (pt) * 2002-11-29 2019-06-17 Fraunhofer Ges Forschung Pastilha com camada de separação e camada de suporte e seu processo de fabrico
DE10353530A1 (de) * 2003-11-14 2005-06-23 Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. Wafer mit Deckschicht und Trennschicht, Verfahren zur Herstellung eines solchen Wafers sowie Verfahren zum Dünnen bzw. Rückseitenmetallisieren eines Wafers
JP4364535B2 (ja) * 2003-03-27 2009-11-18 シャープ株式会社 半導体装置の製造方法
JP2005019435A (ja) * 2003-06-23 2005-01-20 Sharp Corp ウェハ研磨方法
JP4566527B2 (ja) 2003-08-08 2010-10-20 日東電工株式会社 再剥離型粘着シート
JP3935133B2 (ja) * 2003-11-07 2007-06-20 本田技研工業株式会社 重畳部の形成方法
KR100601797B1 (ko) * 2003-12-02 2006-07-14 도레이새한 주식회사 실리콘 이형 폴리에스테르 필름
JP4716668B2 (ja) * 2004-04-21 2011-07-06 日東電工株式会社 被着物の加熱剥離方法及び被着物加熱剥離装置
JP2006032488A (ja) * 2004-07-13 2006-02-02 Shin Etsu Polymer Co Ltd 電子部品保持具及びその使用方法
US8040469B2 (en) * 2004-09-10 2011-10-18 Semiconductor Energy Laboratory Co., Ltd. Display device, method for manufacturing the same and apparatus for manufacturing the same

Similar Documents

Publication Publication Date Title
JP2009528688A5 (enExample)
JP6709159B2 (ja) 蛍光変換体を有する接着剤のない発光デバイス
WO2009037797A1 (ja) 表示装置の製造方法及び積層構造体
JP2012524159A5 (enExample)
JP2011091297A5 (enExample)
EP2587530A3 (en) Wafer processing laminate, wafer processing member, temporary bonding arrangement, and thin wafer manufacturing method
JP2014022665A5 (enExample)
WO2009078221A1 (ja) ダイシングシート、その製造方法、および電子部品の製造方法
JP2013533813A5 (enExample)
WO2010148398A3 (en) A thin-film device and method of fabricating the same
TWI419215B (zh) 半導體晶片之製造方法、半導體用黏接薄膜及使用其之複合片
JP2015503220A5 (enExample)
JPWO2016104759A1 (ja) 熱輸送構造体およびその製造方法
JP2013120771A5 (enExample)
JP2010245412A5 (enExample)
JP2009028923A5 (enExample)
CN106663708B (zh) 包括聚合物正面的光伏模块
JP2015518270A5 (enExample)
JP2013546198A5 (enExample)
JP2015513599A5 (enExample)
CN104419341A (zh) 切割用粘着胶带以及半导体芯片的制造方法
TW201238067A (en) Photovoltaic (PV) PSA composite and use for producing PV modules by embedding into a liquid
WO2009078203A1 (ja) 多層粘着シート及び多層粘着シートを用いた電子部品の製造方法
JP2016507396A5 (enExample)
JP2007157787A5 (enExample)