JP5335443B2 - ウエハ支持構造体及び該ウエハ支持構造体の製造に用いられる層システム - Google Patents

ウエハ支持構造体及び該ウエハ支持構造体の製造に用いられる層システム Download PDF

Info

Publication number
JP5335443B2
JP5335443B2 JP2008556786A JP2008556786A JP5335443B2 JP 5335443 B2 JP5335443 B2 JP 5335443B2 JP 2008556786 A JP2008556786 A JP 2008556786A JP 2008556786 A JP2008556786 A JP 2008556786A JP 5335443 B2 JP5335443 B2 JP 5335443B2
Authority
JP
Japan
Prior art keywords
layer
wafer
support
elastomeric material
layer system
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
JP2008556786A
Other languages
English (en)
Japanese (ja)
Other versions
JP2009528688A (ja
JP2009528688A5 (enExample
Inventor
アンドレアス ヤーコプ
Original Assignee
シン マテリアルズ アクチェンゲゼルシャフト
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from DE102006009394.1A external-priority patent/DE102006009394B4/de
Priority claimed from DE102006009353.4A external-priority patent/DE102006009353B4/de
Priority claimed from DE102006048799.0A external-priority patent/DE102006048799B4/de
Priority claimed from DE102006048800.8A external-priority patent/DE102006048800B4/de
Application filed by シン マテリアルズ アクチェンゲゼルシャフト filed Critical シン マテリアルズ アクチェンゲゼルシャフト
Publication of JP2009528688A publication Critical patent/JP2009528688A/ja
Publication of JP2009528688A5 publication Critical patent/JP2009528688A5/ja
Application granted granted Critical
Publication of JP5335443B2 publication Critical patent/JP5335443B2/ja
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Images

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67132—Apparatus for placing on an insulating substrate, e.g. tape
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/6835—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/6835—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
    • H01L21/6836—Wafer tapes, e.g. grinding or dicing support tapes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
    • H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2221/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
    • H01L2221/67—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
    • H01L2221/683—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L2221/68304—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
    • H01L2221/68327—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support used during dicing or grinding
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2221/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
    • H01L2221/67—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
    • H01L2221/683—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L2221/68304—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
    • H01L2221/68327—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support used during dicing or grinding
    • H01L2221/68331—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support used during dicing or grinding of passive members, e.g. die mounting substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2221/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
    • H01L2221/67—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
    • H01L2221/683—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L2221/68304—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
    • H01L2221/6834—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support used to protect an active side of a device or wafer
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2221/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
    • H01L2221/67—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
    • H01L2221/683—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L2221/68304—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
    • H01L2221/68363—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support used in a transfer process involving transfer directly from an origin substrate to a target substrate without use of an intermediate handle substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2221/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
    • H01L2221/67—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
    • H01L2221/683—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L2221/68304—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
    • H01L2221/68381—Details of chemical or physical process used for separating the auxiliary support from a device or wafer
    • H01L2221/68386—Separation by peeling
    • H01L2221/68395—Separation by peeling using peeling wheel
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T156/00—Adhesive bonding and miscellaneous chemical manufacture
    • Y10T156/10—Methods of surface bonding and/or assembly therefor
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T29/00—Metal working
    • Y10T29/49—Method of mechanical manufacture
    • Y10T29/49826—Assembling or joining
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T83/00—Cutting
    • Y10T83/04—Processes

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
  • Constituent Portions Of Griding Lathes, Driving, Sensing And Control (AREA)
JP2008556786A 2006-03-01 2007-03-01 ウエハ支持構造体及び該ウエハ支持構造体の製造に用いられる層システム Active JP5335443B2 (ja)

Applications Claiming Priority (9)

Application Number Priority Date Filing Date Title
DE102006009394.1A DE102006009394B4 (de) 2006-03-01 2006-03-01 Mehrlagenschichtsystem mit einer Schicht als Trennschicht zum Trägern von dünnen Wafern bei der Halbleiterherstellung, Verwendung des Schichtsystems beim und Verfahren zum Abdünnen eines Wafers
DE102006009394.1 2006-03-01
DE102006009353.4 2006-03-01
DE102006009353.4A DE102006009353B4 (de) 2006-03-01 2006-03-01 Mehrlagenschichtsystem zum Trägern von dünnen Wafern bei der Halbleiterherstellung mit der Eigenschaft zum Haltern mittels elektrostatischer Aufladung
DE102006048799.0A DE102006048799B4 (de) 2006-10-16 2006-10-16 Verfahren und Einrichtung zum Ablösen eines dünnen Wafers oder bereits vereinzelter Bauelemente eines dünnen Wafers von einem Träger
DE102006048799.0 2006-10-16
DE102006048800.8A DE102006048800B4 (de) 2006-10-16 2006-10-16 Mehrlagenschichtsystem mit hartem Träger zum Trägern von dünnen Wafern bei der Halbleiterherstellung
DE102006048800.8 2006-10-16
PCT/EP2007/051952 WO2007099146A1 (de) 2006-03-01 2007-03-01 Verfahren zum bearbeiten insbesondere dünnen der rückseite eines wafers, wafer-träger-anordnung hierfür und verfahren zur herstellung einer solchen wafer-träger-anordnung

Publications (3)

Publication Number Publication Date
JP2009528688A JP2009528688A (ja) 2009-08-06
JP2009528688A5 JP2009528688A5 (enExample) 2010-04-22
JP5335443B2 true JP5335443B2 (ja) 2013-11-06

Family

ID=37963755

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2008556786A Active JP5335443B2 (ja) 2006-03-01 2007-03-01 ウエハ支持構造体及び該ウエハ支持構造体の製造に用いられる層システム

Country Status (5)

Country Link
US (1) US8911583B2 (enExample)
EP (1) EP1994554B1 (enExample)
JP (1) JP5335443B2 (enExample)
KR (1) KR101458143B1 (enExample)
WO (1) WO2007099146A1 (enExample)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2022114112A1 (ja) 2020-11-30 2022-06-02 日産化学株式会社 積層体、積層体の製造方法、及び半導体基板の製造方法
WO2022202029A1 (ja) 2021-03-26 2022-09-29 日産化学株式会社 積層体、積層体の製造方法、及び半導体基板の製造方法

Families Citing this family (43)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
PT1568071T (pt) * 2002-11-29 2019-06-17 Fraunhofer Ges Forschung Pastilha com camada de separação e camada de suporte e seu processo de fabrico
KR101004849B1 (ko) * 2008-09-02 2010-12-28 삼성전기주식회사 박막소자 제조방법
DE102008044200B4 (de) 2008-11-28 2012-08-23 Thin Materials Ag Bonding-Verfahren
DE102008055155A1 (de) 2008-12-23 2010-07-01 Thin Materials Ag Trennverfahren für ein Schichtsystem umfassend einen Wafer
JP2012064710A (ja) * 2010-09-15 2012-03-29 Asahi Glass Co Ltd 半導体素子の製造方法
US8696864B2 (en) 2012-01-26 2014-04-15 Promerus, Llc Room temperature debonding composition, method and stack
DE102012101237A1 (de) * 2012-02-16 2013-08-22 Ev Group E. Thallner Gmbh Verfahren zum temporären Verbinden eines Produktsubstrats mit einem Trägersubstrat
JP2013211505A (ja) 2012-03-02 2013-10-10 Fujifilm Corp 半導体装置の製造方法
US10186458B2 (en) * 2012-07-05 2019-01-22 Infineon Technologies Ag Component and method of manufacturing a component using an ultrathin carrier
JP5909460B2 (ja) 2012-09-28 2016-04-26 富士フイルム株式会社 半導体装置製造用仮接着剤、並びに、それを用いた接着性支持体、及び、半導体装置の製造方法。
JP5982248B2 (ja) 2012-09-28 2016-08-31 富士フイルム株式会社 半導体装置製造用仮接合層、積層体、及び、半導体装置の製造方法。
JP2014070191A (ja) 2012-09-28 2014-04-21 Fujifilm Corp 半導体装置製造用仮接着剤、並びに、それを用いた接着性支持体、及び、半導体装置の製造方法。
US9269623B2 (en) 2012-10-25 2016-02-23 Rohm And Haas Electronic Materials Llc Ephemeral bonding
US9331230B2 (en) * 2012-10-30 2016-05-03 Cbrite Inc. LED die dispersal in displays and light panels with preserving neighboring relationship
KR102075635B1 (ko) * 2013-01-03 2020-03-02 삼성전자주식회사 웨이퍼 지지 구조물, 웨이퍼 지지 구조물을 포함하는 반도체 패키지의 중간 구조물, 및 중간 구조물을 이용한 반도체 패키지의 제조 방법
KR102309244B1 (ko) 2013-02-20 2021-10-05 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치
JP6114596B2 (ja) 2013-03-26 2017-04-12 富士フイルム株式会社 半導体装置製造用仮接合用積層体、および、半導体装置の製造方法
JP6050170B2 (ja) 2013-03-27 2016-12-21 富士フイルム株式会社 半導体装置製造用仮接合用積層体、および、半導体装置の製造方法
JP5975918B2 (ja) 2013-03-27 2016-08-23 富士フイルム株式会社 半導体装置製造用仮接合用積層体、および、半導体装置の製造方法
JP6182491B2 (ja) 2013-08-30 2017-08-16 富士フイルム株式会社 積層体およびその応用
US9315696B2 (en) * 2013-10-31 2016-04-19 Dow Global Technologies Llc Ephemeral bonding
US10157766B2 (en) 2014-03-19 2018-12-18 Samsung Electronics Co., Ltd. Method of fabricating a semiconductor device
TWI667311B (zh) 2014-06-13 2019-08-01 日商富士軟片股份有限公司 Temporary fixing of the adhesive, adhesive film, adhesive support, laminate and adhesive kit
TWI661935B (zh) 2014-06-13 2019-06-11 日商富士軟片股份有限公司 暫時接著用積層體、暫時接著用積層體的製造方法以及帶有元件晶圓的積層體
TW201601918A (zh) 2014-06-13 2016-01-16 Fujifilm Corp 暫時接著用積層體、暫時接著用積層體的製造方法以及帶有元件晶圓的積層體
JP2016021560A (ja) * 2014-06-20 2016-02-04 株式会社半導体エネルギー研究所 剥離装置
DE102014219095A1 (de) * 2014-09-22 2016-03-24 Nissan Chemical Industries, Ltd. Wafer-Träger-Anordnung
US10141216B2 (en) * 2014-10-22 2018-11-27 Promerus, Llc Room temperature debondable and thermally curable compositions
US9644118B2 (en) 2015-03-03 2017-05-09 Dow Global Technologies Llc Method of releasably attaching a semiconductor substrate to a carrier
EP3280589B1 (en) * 2015-04-08 2021-08-11 Nitto Denko Corporation Sheet, moisture proof method of adherend using the sheet and corrosion proof method of metal plate using the sheet
FR3038128B1 (fr) * 2015-06-26 2018-09-07 Commissariat A L'energie Atomique Et Aux Energies Alternatives Procede de fabrication d'un dispositif electronique
DE112015006857B4 (de) 2015-08-31 2023-10-05 Disco Corporation Verfahren zum Bearbeiten eines Wafers und Schutzabdeckung zur Verwendung in diesem Verfahren
EP3477685A4 (en) 2016-06-22 2020-07-01 Nissan Chemical Corporation POLYDIMETHYLSILOXANE ADHESIVE
KR102718731B1 (ko) 2017-05-24 2024-10-18 닛산 가가쿠 가부시키가이샤 에폭시변성 폴리실록산을 함유하는 가접착제
WO2019009365A1 (ja) 2017-07-06 2019-01-10 日産化学株式会社 フェニル基含有ポリシロキサンを含有する仮接着剤
CN111684584A (zh) * 2018-02-01 2020-09-18 康宁股份有限公司 用于卷形式的电子封装和其他应用的单一化基材
JP7424969B2 (ja) 2018-05-01 2024-01-30 日産化学株式会社 耐熱性重合禁止剤を含むポリシロキサンを含有する仮接着剤
EP3882954A4 (en) 2018-11-16 2022-07-27 Nissan Chemical Corporation LAMINATE REMOVAL METHOD, LAMINATE, AND LAMINATE PRODUCTION METHOD
TW202428830A (zh) 2018-11-16 2024-07-16 日商日產化學股份有限公司 紅外線剝離用接著劑組成物、積層體、積層體之製造方法及剝離方法
EP3888909A4 (en) 2018-11-28 2022-08-24 Nissan Chemical Corporation ADHESIVE COMPOSITION, LAYERING PRODUCT AND METHOD OF MANUFACTURING A LAYERING PRODUCT AND METHOD OF THICKNESSING A SEMICONDUCTOR SUBSTRATE
WO2020185292A1 (en) * 2019-03-11 2020-09-17 Hrl Laboratories, Llc Method to protect die during metal-embedded chip assembly (meca) process
US11735464B1 (en) * 2020-08-21 2023-08-22 American Semiconductor, Inc. Method of demounting thin semiconductor devices
WO2023182138A1 (ja) 2022-03-24 2023-09-28 日産化学株式会社 ポリエーテル変性シロキサンを含有する接着剤

Family Cites Families (20)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6828812B2 (en) 1991-06-04 2004-12-07 Micron Technology, Inc. Test apparatus for testing semiconductor dice including substrate with penetration limiting contacts for making electrical connections
US5548091A (en) * 1993-10-26 1996-08-20 Tessera, Inc. Semiconductor chip connection components with adhesives and methods for bonding to the chip
US6071795A (en) * 1998-01-23 2000-06-06 The Regents Of The University Of California Separation of thin films from transparent substrates by selective optical processing
US6159827A (en) * 1998-04-13 2000-12-12 Mitsui Chemicals, Inc. Preparation process of semiconductor wafer
US6393759B1 (en) * 2000-01-21 2002-05-28 Jeffrey K. Brown Electronic fly trap apparatus with cover
KR100404229B1 (ko) * 2001-02-06 2003-11-03 앰코 테크놀로지 코리아 주식회사 반도체 칩 제조방법
KR20030038048A (ko) * 2001-11-08 2003-05-16 삼성전자주식회사 웨이퍼 이면 연마를 위한 라미네이터 장비 및 그 운용방법
JP4312419B2 (ja) * 2002-05-09 2009-08-12 リンテック株式会社 半導体ウエハの加工方法
US6923881B2 (en) * 2002-05-27 2005-08-02 Fuji Photo Film Co., Ltd. Method for producing organic electroluminescent device and transfer material used therein
JP2004043814A (ja) 2002-07-15 2004-02-12 Dow Corning Toray Silicone Co Ltd シリコーン系接着性シート、半導体チップと該チップ取付部の接着方法、および半導体装置
PT1568071T (pt) * 2002-11-29 2019-06-17 Fraunhofer Ges Forschung Pastilha com camada de separação e camada de suporte e seu processo de fabrico
DE10353530A1 (de) * 2003-11-14 2005-06-23 Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. Wafer mit Deckschicht und Trennschicht, Verfahren zur Herstellung eines solchen Wafers sowie Verfahren zum Dünnen bzw. Rückseitenmetallisieren eines Wafers
JP4364535B2 (ja) * 2003-03-27 2009-11-18 シャープ株式会社 半導体装置の製造方法
JP2005019435A (ja) * 2003-06-23 2005-01-20 Sharp Corp ウェハ研磨方法
JP4566527B2 (ja) 2003-08-08 2010-10-20 日東電工株式会社 再剥離型粘着シート
JP3935133B2 (ja) * 2003-11-07 2007-06-20 本田技研工業株式会社 重畳部の形成方法
KR100601797B1 (ko) * 2003-12-02 2006-07-14 도레이새한 주식회사 실리콘 이형 폴리에스테르 필름
JP4716668B2 (ja) * 2004-04-21 2011-07-06 日東電工株式会社 被着物の加熱剥離方法及び被着物加熱剥離装置
JP2006032488A (ja) * 2004-07-13 2006-02-02 Shin Etsu Polymer Co Ltd 電子部品保持具及びその使用方法
US8040469B2 (en) * 2004-09-10 2011-10-18 Semiconductor Energy Laboratory Co., Ltd. Display device, method for manufacturing the same and apparatus for manufacturing the same

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2022114112A1 (ja) 2020-11-30 2022-06-02 日産化学株式会社 積層体、積層体の製造方法、及び半導体基板の製造方法
WO2022202029A1 (ja) 2021-03-26 2022-09-29 日産化学株式会社 積層体、積層体の製造方法、及び半導体基板の製造方法
KR20230162939A (ko) 2021-03-26 2023-11-29 닛산 가가쿠 가부시키가이샤 적층체, 적층체의 제조 방법, 및 반도체 기판의 제조 방법

Also Published As

Publication number Publication date
EP1994554A1 (de) 2008-11-26
EP1994554B1 (de) 2015-07-29
WO2007099146A1 (de) 2007-09-07
JP2009528688A (ja) 2009-08-06
US20100043608A1 (en) 2010-02-25
KR20080100471A (ko) 2008-11-18
KR101458143B1 (ko) 2014-11-05
US8911583B2 (en) 2014-12-16

Similar Documents

Publication Publication Date Title
JP5335443B2 (ja) ウエハ支持構造体及び該ウエハ支持構造体の製造に用いられる層システム
KR101180497B1 (ko) 중간층 및 지지층을 갖는 웨이퍼 및 웨이퍼를 처리하기위한 방법 및 장치
KR101350045B1 (ko) 다이싱용 점착 시트 및 그것을 이용한 피가공물의 가공방법
JP5558531B2 (ja) デバイスウェーハーをキャリヤー基板に逆に装着する方法
US7064069B2 (en) Substrate thinning including planarization
US7135384B2 (en) Semiconductor wafer dividing method and apparatus
US7910454B2 (en) Combination of a substrate and a wafer
US9064686B2 (en) Method and apparatus for temporary bonding of ultra thin wafers
TWI694497B (zh) 具備氧化物單結晶薄膜之複合晶圓之製造方法
TWI774671B (zh) 結合兩基材之方法與裝置
KR100661282B1 (ko) 웨이퍼의 배면 연마방법
CN100365791C (zh) 用于加工晶圆的方法和设备及包括分离层和支持层的晶圆
US20240178056A1 (en) Method for transferring a layer of a heterostructure
KR100843217B1 (ko) 웨이퍼 후면 액상접착제 도포를 이용한 반도체 패키지 제조용 인라인 시스템
CN101395703B (zh) 晶片-载体装置及其制造方法、用于晶片-载体装置的层系统及其制造方法
CN103302572A (zh) 板状物的磨削方法
JP2024168460A (ja) ウェーハの加工方法
KR20210101588A (ko) 기판의 구조충진을 위한 가역적 코팅 방법 및 봉지 방법
TW202540351A (zh) 用於製造一底材的方法及該底材
KR100725013B1 (ko) 웨이퍼 그라인딩 후 테이프의 제거 방법
KR20190007941A (ko) 멤스 웨이퍼의 쏘잉 방법

Legal Events

Date Code Title Description
A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20100301

A621 Written request for application examination

Free format text: JAPANESE INTERMEDIATE CODE: A621

Effective date: 20100301

A711 Notification of change in applicant

Free format text: JAPANESE INTERMEDIATE CODE: A711

Effective date: 20100723

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A821

Effective date: 20100723

A977 Report on retrieval

Free format text: JAPANESE INTERMEDIATE CODE: A971007

Effective date: 20111117

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20111205

A601 Written request for extension of time

Free format text: JAPANESE INTERMEDIATE CODE: A601

Effective date: 20120302

RD04 Notification of resignation of power of attorney

Free format text: JAPANESE INTERMEDIATE CODE: A7424

Effective date: 20120216

A602 Written permission of extension of time

Free format text: JAPANESE INTERMEDIATE CODE: A602

Effective date: 20120309

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20120604

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20121009

A601 Written request for extension of time

Free format text: JAPANESE INTERMEDIATE CODE: A601

Effective date: 20130109

A602 Written permission of extension of time

Free format text: JAPANESE INTERMEDIATE CODE: A602

Effective date: 20130117

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20130311

TRDD Decision of grant or rejection written
A01 Written decision to grant a patent or to grant a registration (utility model)

Free format text: JAPANESE INTERMEDIATE CODE: A01

Effective date: 20130722

A61 First payment of annual fees (during grant procedure)

Free format text: JAPANESE INTERMEDIATE CODE: A61

Effective date: 20130731

R150 Certificate of patent or registration of utility model

Ref document number: 5335443

Country of ref document: JP

Free format text: JAPANESE INTERMEDIATE CODE: R150

Free format text: JAPANESE INTERMEDIATE CODE: R150

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

S533 Written request for registration of change of name

Free format text: JAPANESE INTERMEDIATE CODE: R313533

R350 Written notification of registration of transfer

Free format text: JAPANESE INTERMEDIATE CODE: R350

S111 Request for change of ownership or part of ownership

Free format text: JAPANESE INTERMEDIATE CODE: R313113

R350 Written notification of registration of transfer

Free format text: JAPANESE INTERMEDIATE CODE: R350

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

S531 Written request for registration of change of domicile

Free format text: JAPANESE INTERMEDIATE CODE: R313531

S533 Written request for registration of change of name

Free format text: JAPANESE INTERMEDIATE CODE: R313533

R350 Written notification of registration of transfer

Free format text: JAPANESE INTERMEDIATE CODE: R350

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250