JP2009528681A5 - - Google Patents

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Publication number
JP2009528681A5
JP2009528681A5 JP2008556571A JP2008556571A JP2009528681A5 JP 2009528681 A5 JP2009528681 A5 JP 2009528681A5 JP 2008556571 A JP2008556571 A JP 2008556571A JP 2008556571 A JP2008556571 A JP 2008556571A JP 2009528681 A5 JP2009528681 A5 JP 2009528681A5
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JP
Japan
Prior art keywords
particles
group
intermetallic
chalcogenide
phase
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2008556571A
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English (en)
Japanese (ja)
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JP2009528681A (ja
Filing date
Publication date
Priority claimed from US11/361,433 external-priority patent/US7700464B2/en
Priority claimed from US11/361,103 external-priority patent/US20070169809A1/en
Priority claimed from US11/361,498 external-priority patent/US20070163639A1/en
Priority claimed from US11/361,523 external-priority patent/US20070169811A1/en
Priority claimed from US11/361,464 external-priority patent/US20070169810A1/en
Priority claimed from US11/361,515 external-priority patent/US20070163640A1/en
Priority claimed from US11/361,522 external-priority patent/US20070166453A1/en
Priority claimed from US11/394,849 external-priority patent/US20070163641A1/en
Priority claimed from US11/395,668 external-priority patent/US8309163B2/en
Priority claimed from US11/395,438 external-priority patent/US20070163643A1/en
Application filed filed Critical
Priority claimed from PCT/US2007/062764 external-priority patent/WO2007101136A2/en
Publication of JP2009528681A publication Critical patent/JP2009528681A/ja
Publication of JP2009528681A5 publication Critical patent/JP2009528681A5/ja
Pending legal-status Critical Current

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JP2008556571A 2006-02-23 2007-02-23 カルコゲンと金属間物質の使用による高処理能力の半導体層形成 Pending JP2009528681A (ja)

Applications Claiming Priority (12)

Application Number Priority Date Filing Date Title
US11/361,523 US20070169811A1 (en) 2004-02-19 2006-02-23 High-throughput printing of semiconductor precursor layer by use of thermal and chemical gradients
US11/361,464 US20070169810A1 (en) 2004-02-19 2006-02-23 High-throughput printing of semiconductor precursor layer by use of chalcogen-containing vapor
US11/361,515 US20070163640A1 (en) 2004-02-19 2006-02-23 High-throughput printing of semiconductor precursor layer by use of chalcogen-rich chalcogenides
US11/361,433 US7700464B2 (en) 2004-02-19 2006-02-23 High-throughput printing of semiconductor precursor layer from nanoflake particles
US11/361,522 US20070166453A1 (en) 2004-02-19 2006-02-23 High-throughput printing of chalcogen layer
US11/361,103 US20070169809A1 (en) 2004-02-19 2006-02-23 High-throughput printing of semiconductor precursor layer by use of low-melting chalcogenides
US11/361,498 US20070163639A1 (en) 2004-02-19 2006-02-23 High-throughput printing of semiconductor precursor layer from microflake particles
US39619906A 2006-03-30 2006-03-30
US11/394,849 US20070163641A1 (en) 2004-02-19 2006-03-30 High-throughput printing of semiconductor precursor layer from inter-metallic nanoflake particles
US11/395,668 US8309163B2 (en) 2004-02-19 2006-03-30 High-throughput printing of semiconductor precursor layer by use of chalcogen-containing vapor and inter-metallic material
US11/395,438 US20070163643A1 (en) 2004-02-19 2006-03-30 High-throughput printing of chalcogen layer and the use of an inter-metallic material
PCT/US2007/062764 WO2007101136A2 (en) 2006-02-23 2007-02-23 High-throughput formation of semiconductor layer by use of chalcogen and inter-metallic material

Publications (2)

Publication Number Publication Date
JP2009528681A JP2009528681A (ja) 2009-08-06
JP2009528681A5 true JP2009528681A5 (hr) 2010-04-08

Family

ID=38459766

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2008556571A Pending JP2009528681A (ja) 2006-02-23 2007-02-23 カルコゲンと金属間物質の使用による高処理能力の半導体層形成

Country Status (3)

Country Link
EP (1) EP1998902A2 (hr)
JP (1) JP2009528681A (hr)
WO (1) WO2007101136A2 (hr)

Families Citing this family (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101144807B1 (ko) 2007-09-18 2012-05-11 엘지전자 주식회사 태양전지 박막조성용 잉크와 그 제조방법, 이를 이용한ｃｉｇｓ 박막형 태양전지, 및 그 제조 방법
CN101471394A (zh) * 2007-12-29 2009-07-01 中国科学院上海硅酸盐研究所 铜铟镓硫硒薄膜太阳电池光吸收层的制备方法
JP5185171B2 (ja) * 2009-03-24 2013-04-17 本田技研工業株式会社 薄膜太陽電池の光吸収層の形成方法
JP5213777B2 (ja) * 2009-03-26 2013-06-19 京セラ株式会社 薄膜太陽電池の製法
EP2501741A1 (en) * 2009-11-20 2012-09-26 E. I. du Pont de Nemours and Company Coverlay compositions and methods relating thereto
JP2011138837A (ja) * 2009-12-26 2011-07-14 Kyocera Corp 半導体層の製造方法および光電変換装置の製造方法
JP5495849B2 (ja) * 2010-02-25 2014-05-21 京セラ株式会社 半導体層の製造方法および光電変換装置の製造方法
US20130118585A1 (en) * 2010-06-22 2013-05-16 University Of Florida Research Foundation, Inc. Nanocrystalline copper indium diselenide (cis) and ink-based alloys absorber layers for solar cells
JP2012114250A (ja) * 2010-11-25 2012-06-14 Kyocera Corp 光電変換装置の製造方法
EP2647595A2 (en) * 2012-04-03 2013-10-09 Neo Solar Power Corp. Ink composition, chalcogenide semiconductor film, photovoltaic device and methods for forming the same
JP5860765B2 (ja) * 2012-05-30 2016-02-16 富士フイルム株式会社 光電変換素子および光電変換素子の製造方法
US8728855B2 (en) * 2012-09-28 2014-05-20 First Solar, Inc. Method of processing a semiconductor assembly
TWI449193B (zh) * 2012-12-21 2014-08-11 Ind Tech Res Inst 太陽電池吸收層之製備方法及其熱處理設備
US9196767B2 (en) 2013-07-18 2015-11-24 Nanoco Technologies Ltd. Preparation of copper selenide nanoparticles
US20160149061A1 (en) * 2013-08-01 2016-05-26 Lg Chem, Ltd. Metal chalcogenide nanoparticles for manufacturing solar cell light absorption layers and method of manufacturing the same
KR101619933B1 (ko) * 2013-08-01 2016-05-11 주식회사 엘지화학 태양전지 광흡수층 제조용 3층 코어-쉘 나노 입자 및 이의 제조 방법
KR101689471B1 (ko) * 2015-06-15 2016-12-26 한양대학교 산학협력단 금속 칼코겐 화합물 박막 및 그 제조 방법
JP7390001B2 (ja) * 2017-02-16 2023-12-01 ウェイク フォレスト ユニバーシティ 複合ナノ粒子組成物およびアセンブリ

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH01160060A (ja) * 1987-12-17 1989-06-22 Matsushita Electric Ind Co Ltd ２セレン化インジウム銅の製造方法
JP3064701B2 (ja) * 1992-10-30 2000-07-12 松下電器産業株式会社 カルコパイライト型化合物薄膜の製造方法
JP3249408B2 (ja) * 1996-10-25 2002-01-21 昭和シェル石油株式会社 薄膜太陽電池の薄膜光吸収層の製造方法及び製造装置
WO2001037324A1 (en) * 1999-11-16 2001-05-25 Midwest Research Institute A NOVEL PROCESSING APPROACH TOWARDS THE FORMATION OF THIN-FILM Cu(In,Ga)Se¿2?
US7842882B2 (en) * 2004-03-01 2010-11-30 Basol Bulent M Low cost and high throughput deposition methods and apparatus for high density semiconductor film growth
JP3897622B2 (ja) * 2002-03-18 2007-03-28 松下電器産業株式会社 化合物半導体薄膜の製造方法

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