JP2009523311A5 - - Google Patents

Download PDF

Info

Publication number
JP2009523311A5
JP2009523311A5 JP2008518548A JP2008518548A JP2009523311A5 JP 2009523311 A5 JP2009523311 A5 JP 2009523311A5 JP 2008518548 A JP2008518548 A JP 2008518548A JP 2008518548 A JP2008518548 A JP 2008518548A JP 2009523311 A5 JP2009523311 A5 JP 2009523311A5
Authority
JP
Japan
Prior art keywords
substrate
layer
reflective layer
chuck
reflective
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP2008518548A
Other languages
English (en)
Japanese (ja)
Other versions
JP4862892B2 (ja
JP2009523311A (ja
Filing date
Publication date
Priority claimed from US11/330,205 external-priority patent/US7678511B2/en
Application filed filed Critical
Publication of JP2009523311A publication Critical patent/JP2009523311A/ja
Publication of JP2009523311A5 publication Critical patent/JP2009523311A5/ja
Application granted granted Critical
Publication of JP4862892B2 publication Critical patent/JP4862892B2/ja
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

Links

JP2008518548A 2006-01-12 2007-01-12 Ｅｕｖリソグラフィ用反射型マスクブランクの製造方法 Expired - Fee Related JP4862892B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US11/330,205 2006-01-12
US11/330,205 US7678511B2 (en) 2006-01-12 2006-01-12 Reflective-type mask blank for EUV lithography
PCT/JP2007/050845 WO2007081059A2 (en) 2006-01-12 2007-01-12 Reflective-type mask blank for euv lithography

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP2011166856A Division JP4862970B2 (ja) 2006-01-12 2011-07-29 Ｅｕｖリソグラフィ用反射型マスクブランク

Publications (3)

Publication Number Publication Date
JP2009523311A JP2009523311A (ja) 2009-06-18
JP2009523311A5 true JP2009523311A5 (https=) 2009-10-15
JP4862892B2 JP4862892B2 (ja) 2012-01-25

Family

ID=37891724

Family Applications (2)

Application Number Title Priority Date Filing Date
JP2008518548A Expired - Fee Related JP4862892B2 (ja) 2006-01-12 2007-01-12 Ｅｕｖリソグラフィ用反射型マスクブランクの製造方法
JP2011166856A Active JP4862970B2 (ja) 2006-01-12 2011-07-29 Ｅｕｖリソグラフィ用反射型マスクブランク

Family Applications After (1)

Application Number Title Priority Date Filing Date
JP2011166856A Active JP4862970B2 (ja) 2006-01-12 2011-07-29 Ｅｕｖリソグラフィ用反射型マスクブランク

Country Status (7)

Country Link
US (2) US7678511B2 (https=)
EP (3) EP2278395A1 (https=)
JP (2) JP4862892B2 (https=)
KR (1) KR101287697B1 (https=)
AT (1) ATE533084T1 (https=)
TW (1) TWI452418B (https=)
WO (1) WO2007081059A2 (https=)

Families Citing this family (46)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5082857B2 (ja) * 2005-12-12 2012-11-28 旭硝子株式会社 Ｅｕｖリソグラフィ用反射型マスクブランク、および該マスクブランク用の導電膜付基板
JP4532533B2 (ja) * 2007-09-18 2010-08-25 アドバンスド・マスク・インスペクション・テクノロジー株式会社 Ｅｕｖ露光用マスクブランクおよびｅｕｖ露光用マスク
JP4663749B2 (ja) * 2008-03-11 2011-04-06 大日本印刷株式会社 反射型マスクの検査方法および製造方法
EP2256789B1 (en) * 2008-03-18 2012-07-04 Asahi Glass Company, Limited Reflective mask blank for euv lithography
JP2010135732A (ja) * 2008-08-01 2010-06-17 Asahi Glass Co Ltd Ｅｕｖマスクブランクス用基板
KR20110065439A (ko) * 2008-09-05 2011-06-15 아사히 가라스 가부시키가이샤 Ｅｕｖ 리소그래피용 반사형 마스크 블랭크 및 그 제조 방법
TWI464529B (zh) * 2009-12-09 2014-12-11 旭硝子股份有限公司 EUV microfilm with anti-reflective substrate, EUV microsurgical reflective mask substrate, EUV microsurgical reflective mask and manufacturing method of the reflective substrate
KR20130007537A (ko) 2010-03-02 2013-01-18 아사히 가라스 가부시키가이샤 Ｅｕｖ 리소그래피용 반사형 마스크 블랭크 및 그 제조 방법
JP5560776B2 (ja) * 2010-03-03 2014-07-30 旭硝子株式会社 Ｅｕｖリソグラフィ用反射型マスクブランクスの製造方法
DE102011079933A1 (de) * 2010-08-19 2012-02-23 Carl Zeiss Smt Gmbh Optisches Element für die UV- oder EUV-Lithographie
KR101857844B1 (ko) 2011-02-04 2018-05-14 아사히 가라스 가부시키가이샤 도전막이 형성된 기판, 다층 반사막이 형성된 기판, 및 ｅｕｖ 리소그래피용 반사형 마스크 블랭크
JP5950535B2 (ja) * 2011-10-25 2016-07-13 凸版印刷株式会社 反射型マスクブランクおよび反射型マスク
CN103858209B (zh) * 2011-09-28 2017-06-06 凸版印刷株式会社 反射型曝光用掩模坯及反射型曝光用掩模
EP2581789B1 (en) * 2011-10-14 2020-04-29 Fundació Institut de Ciències Fotòniques Optically transparent and electrically conductive coatings and method for their deposition on a substrate
JP6157874B2 (ja) * 2012-03-19 2017-07-05 Hoya株式会社 Ｅｕｖリソグラフィー用多層反射膜付き基板及びｅｕｖリソグラフィー用反射型マスクブランク、並びにｅｕｖリソグラフィー用反射型マスク及び半導体装置の製造方法
KR20140016662A (ko) 2012-07-30 2014-02-10 에스케이하이닉스 주식회사 극자외선 리소그래피용 마스크 및 그 제조방법, 마스크 정렬도 에러 보정방법
US9377679B2 (en) 2012-07-31 2016-06-28 Hoya Corporation Reflective mask blank and method for manufacturing same, method for manufacturing reflective mask, and method for manufacturing semiconductor device
WO2014050891A1 (ja) 2012-09-28 2014-04-03 旭硝子株式会社 Ｅｕｖリソグラフィ用反射型マスクブランクおよびその製造方法、ならびにｅｕｖリソグラフィ用反射型マスクおよびその製造方法
US9664997B2 (en) * 2012-11-08 2017-05-30 Hoya Corporation Method of manufacturing mask blank and method of manufacturing transfer mask
KR102205778B1 (ko) * 2012-11-20 2021-01-21 호야 가부시키가이샤 마스크 블랭크, 전사용 마스크, 마스크 블랭크의 제조방법, 전사용 마스크의 제조방법 및 반도체 디바이스의 제조방법
US9354508B2 (en) 2013-03-12 2016-05-31 Applied Materials, Inc. Planarized extreme ultraviolet lithography blank, and manufacturing and lithography systems therefor
US20140272684A1 (en) 2013-03-12 2014-09-18 Applied Materials, Inc. Extreme ultraviolet lithography mask blank manufacturing system and method of operation therefor
US9632411B2 (en) 2013-03-14 2017-04-25 Applied Materials, Inc. Vapor deposition deposited photoresist, and manufacturing and lithography systems therefor
US9417515B2 (en) 2013-03-14 2016-08-16 Applied Materials, Inc. Ultra-smooth layer ultraviolet lithography mirrors and blanks, and manufacturing and lithography systems therefor
US9612521B2 (en) 2013-03-12 2017-04-04 Applied Materials, Inc. Amorphous layer extreme ultraviolet lithography blank, and manufacturing and lithography systems therefor
JP6263051B2 (ja) * 2013-03-13 2018-01-17 Hoya株式会社 ハーフトーン型位相シフトマスクブランクの製造方法
DE102013107192A1 (de) * 2013-07-08 2015-01-08 Carl Zeiss Laser Optics Gmbh Reflektives optisches Element für streifenden Einfall im EUV-Wellenlängenbereich
JP6303346B2 (ja) * 2013-09-09 2018-04-04 凸版印刷株式会社 反射型マスクブランクおよび反射型マスク
KR101877896B1 (ko) * 2013-09-27 2018-07-12 호야 가부시키가이샤 도전막 부착 기판, 다층 반사막 부착 기판, 반사형 마스크 블랭크 및 반사형 마스크, 그리고 반도체 장치의 제조방법
US10691013B2 (en) 2013-12-22 2020-06-23 Applied Materials, Inc. Extreme ultraviolet lithography system having chuck assembly and method of manufacturing thereof
JP2016122751A (ja) * 2014-12-25 2016-07-07 Hoya株式会社 多層反射膜付き基板、反射型マスクブランク及び反射型マスク、並びに多層反射膜付き基板、反射型マスクブランク及び半導体装置の製造方法
SG11201710317RA (en) * 2015-06-17 2018-01-30 Hoya Corp Substrate with electrically conductive film, substrate with multilayer reflective film, reflective mask blank, reflective mask, and method of manufacturing semiconductor device
CA3021916A1 (en) * 2016-04-25 2017-11-02 Asml Netherlands B.V. A membrane for euv lithography
US10775693B2 (en) * 2016-12-07 2020-09-15 Fundacio Institut De Ciencies Fotoniques Transparent and electrically conductive coatings containing nitrides, borides or carbides
JP6904234B2 (ja) * 2017-12-15 2021-07-14 Ａｇｃ株式会社 マスクブランク用基板およびマスクブランク
WO2019131506A1 (ja) * 2017-12-27 2019-07-04 Hoya株式会社 導電膜付き基板、多層反射膜付き基板、反射型マスクブランク、反射型マスク及び半導体装置の製造方法
US11448955B2 (en) * 2018-09-27 2022-09-20 Taiwan Semiconductor Manufacturing Co., Ltd. Mask for lithography process and method for manufacturing the same
US11119398B2 (en) * 2018-09-28 2021-09-14 Taiwan Semiconductor Manufacturing Co., Ltd. EUV photo masks
EP3882698A4 (en) * 2018-11-15 2022-08-17 Toppan Printing Co., Ltd. BLANK REFLECTIVE PHOTOMASK AND REFLECTIVE PHOTOMASK
KR102798354B1 (ko) * 2019-01-14 2025-04-23 삼성전자주식회사 포토 마스크, 이의 제조방법, 및 이를 이용한 반도체 소자의 제조방법
KR20220006543A (ko) * 2019-05-21 2022-01-17 에이지씨 가부시키가이샤 Euv 리소그래피용 반사형 마스크 블랭크
JP7689790B2 (ja) * 2019-09-02 2025-06-09 Hoya株式会社 反射膜付基板、マスクブランク、反射型マスク、及び半導体デバイスの製造方法
CN113253563B (zh) * 2020-05-26 2024-12-27 台湾积体电路制造股份有限公司 Euv光掩模及其制造方法
US11506969B2 (en) 2020-05-26 2022-11-22 Taiwan Semiconductor Manufacturing Co., Ltd. EUV photo masks and manufacturing method thereof
WO2024195577A1 (ja) * 2023-03-17 2024-09-26 Ａｇｃ株式会社 Ｅｕｖリソグラフィ用反射型マスクブランクおよび導電膜付き基板
JP2025095450A (ja) * 2023-12-14 2025-06-26 Hoya株式会社 導電膜付き基板、多層反射膜付き基板、反射型マスクブランク、反射型マスク、および半導体装置の製造方法

Family Cites Families (19)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6098408A (en) * 1998-11-11 2000-08-08 Advanced Micro Devices System for controlling reflection reticle temperature in microlithography
JP2000208594A (ja) 1999-01-08 2000-07-28 Nissin Electric Co Ltd ガラス基板の吸着保持方法
AU5597000A (en) 1999-06-07 2000-12-28 Regents Of The University Of California, The Coatings on reflective mask substrates
US6737201B2 (en) * 2000-11-22 2004-05-18 Hoya Corporation Substrate with multilayer film, reflection type mask blank for exposure, reflection type mask for exposure and production method thereof as well as production method of semiconductor device
JP3939132B2 (ja) * 2000-11-22 2007-07-04 Ｈｏｙａ株式会社 多層膜付き基板、露光用反射型マスクブランク、露光用反射型マスクおよびその製造方法、並びに半導体の製造方法
JP4390418B2 (ja) 2001-02-14 2009-12-24 Ｈｏｙａ株式会社 Ｅｕｖ露光用反射型マスクブランクおよびｅｕｖ露光用反射型マスク並びに半導体の製造方法
DE10206143B4 (de) * 2001-02-14 2006-11-16 Hoya Corp. Reflektierender Maskenrohling und reflektierende Maske für EUV-Belichtung und Verfahren zum Herstellen der Maske
JP2002299228A (ja) * 2001-04-03 2002-10-11 Nikon Corp レチクル、それを用いた露光装置及び露光方法
DE10245204B4 (de) * 2001-09-28 2008-02-07 Hoya Corp. Maskenrohling
US7129010B2 (en) * 2002-08-02 2006-10-31 Schott Ag Substrates for in particular microlithography
DE10255605B4 (de) * 2002-11-28 2005-07-07 Infineon Technologies Ag Reflektionsmaske zur Projektion einer Struktur auf einen Halbleiterwafer sowie Verfahren zu deren Herstellung
US6806007B1 (en) * 2003-05-02 2004-10-19 Advanced Micro Devices, Inc. EUV mask which facilitates electro-static chucking
CN100537053C (zh) * 2003-09-29 2009-09-09 Hoya株式会社 掩膜坯及掩膜坯的制造方法
JP4525893B2 (ja) * 2003-10-24 2010-08-18 信越化学工業株式会社 位相シフトマスクブランク、位相シフトマスク及びパターン転写方法
US6984475B1 (en) * 2003-11-03 2006-01-10 Advanced Micro Devices, Inc. Extreme ultraviolet (EUV) lithography masks
JP2005210093A (ja) 2003-12-25 2005-08-04 Hoya Corp 多層反射膜付き基板、露光用反射型マスクブランクス及び露光用反射型マスク、並びにそれらの製造方法
US20050238922A1 (en) * 2003-12-25 2005-10-27 Hoya Corporation Substrate with a multilayer reflection film, reflection type mask blank for exposure, reflection type mask for exposure and methods of manufacturing them
US7230695B2 (en) * 2004-07-08 2007-06-12 Asahi Glass Company, Ltd. Defect repair device and defect repair method
JP2006267595A (ja) * 2005-03-24 2006-10-05 Toshiba Corp マスクブランクスとその製造方法及び使用方法、並びにマスクとその製造方法及び使用方法

Similar Documents

Publication Publication Date Title
JP2009523311A5 (https=)
Li et al. Highly bendable, conductive, and transparent film by an enhanced adhesion of silver nanowires
JP5969527B2 (ja) タッチスクリーン及びその製造方法
TWI584059B (zh) 用於製造透明光罩之方法及藉由該方法所製造之透明光罩、以及使用透明光罩製造導電網格圖案之方法
JP2008545964A5 (https=)
JP2008530820A5 (https=)
TWI456338B (zh) 反射式光罩
JP2006352082A5 (https=)
US20130048339A1 (en) Transparent electrodes based on graphene and grid hybrid structures
JP2006121088A5 (https=)
JP2010186160A5 (https=)
JP2008123664A5 (https=)
JP2007515076A5 (https=)
JP2005511853A5 (https=)
TW201242773A (en) Electrode and electronic device comprising the same
TW201636217A (zh) 透明導電性薄膜積層體及其用途
TW201035675A (en) Method of manufacturing reflective mask blanks for euv lithography
Yu et al. Area-selective lift-off mechanism based on dual-triggered interfacial adhesion switching: highly facile fabrication of flexible nanomesh electrode
US20180307341A1 (en) Touch devices including nanoscale conductive films
US20140104227A1 (en) Touch panel and method for manufacturing the same
CN104850252A (zh) 触控面板及其制造方法
JP2010186159A5 (https=)
JP2005301253A5 (https=)
JP2006216716A5 (https=)
JP5562283B2 (ja) グラフェンを主成分とする透明導電膜を備えた透明導電物とその製造方法