US20180307341A1 - Touch devices including nanoscale conductive films - Google Patents
Touch devices including nanoscale conductive films Download PDFInfo
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- US20180307341A1 US20180307341A1 US16/020,990 US201816020990A US2018307341A1 US 20180307341 A1 US20180307341 A1 US 20180307341A1 US 201816020990 A US201816020990 A US 201816020990A US 2018307341 A1 US2018307341 A1 US 2018307341A1
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- G06F3/01—Input arrangements or combined input and output arrangements for interaction between user and computer
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- G06F3/03—Arrangements for converting the position or the displacement of a member into a coded form
- G06F3/041—Digitisers, e.g. for touch screens or touch pads, characterised by the transducing means
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- B—PERFORMING OPERATIONS; TRANSPORTING
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- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y15/00—Nanotechnology for interacting, sensing or actuating, e.g. quantum dots as markers in protein assays or molecular motors
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y40/00—Manufacture or treatment of nanostructures
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
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- H—ELECTRICITY
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
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- H01L21/3065—Plasma etching; Reactive-ion etching
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
- H01L21/321—After treatment
Definitions
- the present disclosure relates to conductive films and, more particularly, to a touch device including the nanoscale conductive film.
- ITO indium tin oxide
- SNW silver nanowire
- a wet etching process is used to define the electric characteristics of an SNW conductive film.
- SNW conductive film includes an overcoat for securing an SNW coating on a substrate and protecting the SNW coating from oxidation or vulcanization due to ambient molecule reaction in the air. Nevertheless, the overcoat may on the other hand significantly reduce the interaction between the etchant and the SNW, resulting in uneven etch, insufficient etch and a large haze change after etch. Moreover, residue of the etchant may be left over after the etching process, which may cause a subsequently formed SNW conductive film to degrade in electrical characteristics.
- a dry etching process is used to define the electrical characteristics of an SNW conductive film by, for example, bombarding an SNW conductive film by etchant particles in a vacuum environment.
- etching processes may not effectively protect the overcoat and thus the SNW conductive film may be liable to degrade in electrical characteristics.
- the present disclosure provides a touch-panel display device to overcome or alleviate the above-mentioned issues.
- the touch-panel device comprises a transparent substrate including a first surface and a second surface on opposite sides of the transparent substrate, respectively, a display module at the first surface side of the transparent substrate, and a first sensing electrode layer, disposed between the substrate and the display module, including a first nanostructure layer having first regions and second regions, the first regions being electrically isolated from each other by the second regions, and a haze difference between the first regions and the second regions is not greater than 0.1%.
- the first sensing electrode layer is disposed on the first surface of the transparent substrate, and includes first electrodes and second electrodes interleaved with each other in the first regions.
- the touch-panel display device further comprises a first carrier configured to support the first sensing electrode layer between the transparent substrate and the display module, and comprises first electrodes and second electrodes interleaved with each other in the first regions.
- the touch-panel display device further comprises a first carrier and a second sensing electrode layer.
- the first carrier is disposed between the transparent substrate and the display module.
- the first sensing electrode layer is disposed on a first surface of the first carrier, and the second sensing electrode layer is disposed on a second surface of the first carrier, wherein the first surface and second surface are on opposite sides of the first carrier.
- the second sensing electrode layer includes a second nanostructure layer having first regions and second regions. Moreover, the first regions are electrically isolated from each other by the second regions. In addition, a haze difference between the first regions and the second regions in the second nanostructure layer is not greater than 0.1%.
- the first sensing electrode layer includes in the first regions thereof first electrodes arranged in a first direction
- the second sensing electrode layer includes in the first regions thereof second electrodes arranged in a second direction.
- the touch-panel display device further comprises a first carrier and a second sensing electrode layer.
- the first carrier is disposed between the transparent substrate and the display module, wherein the first sensing electrode layer is disposed on a first surface of the first carrier and the second sensing electrode layer is disposed, between the first sensing electrode layer and the first carrier, on the first carrier.
- the second sensing electrode layer includes a second nanostructure layer having first regions and second regions. Moreover, the first regions are electrically isolated from each other by the second regions. In addition, a haze difference between the first regions and the second regions in the second nanostructure layer is not greater than 0.1%.
- the first sensing electrode layer includes in the first regions thereof first electrodes arranged in a first direction
- the second sensing electrode layer includes in the first regions thereof second electrodes arranged in a second direction.
- the methods can effectively achieve a desired etching effect in order to define the electrical characteristics of a nanoscale conductive film.
- conductive regions are electrically isolated from each other by non-conductive regions in the nanoscale conductive film.
- the methods can effectively reduce damage on an overcoat of a nanoscale conductive film caused during an etching process, and maintain the optical characteristics of the nanoscale conductive film.
- the methods can significantly reduce the manufacturing time.
- the etching process for a nanoscale conductive film prepared by the methods is conducted in a current generation system.
- conductive regions and non-conductive regions, either before or after etching exhibit no obvious difference in optical performance.
- the haze difference is not greater than 0.3% or even 0.1%, which makes it more possible to hide the wiring in a touch-panel display device and thus adds an aesthetic touch to the appearance of the touch-panel display device.
- FIGS. 1A to 1D are schematic diagrams showing a method of manufacturing a nanoscale conductive film, in accordance with various embodiments.
- FIGS. 2A to 2D are schematic diagrams showing a method of manufacturing a nanoscale conductive film, in accordance with other embodiments of the disclosure.
- FIGS. 3A to 3D are schematic diagrams showing a method of manufacturing a nanoscale conductive film, in accordance with yet other embodiments of the disclosure.
- FIGS. 4A and 4B are schematic diagrams showing a method of manufacturing a nanoscale conductive film, in accordance with still other embodiments of the disclosure.
- FIGS. 5A and 5B are schematic diagrams showing a method of manufacturing a nanoscale conductive film, in accordance with yet still other embodiments of the disclosure.
- FIGS. 6A and 6B are enlarged photo diagrams of a nanoscale conductive film before etching.
- FIGS. 7A and 7B are enlarged photo diagrams of a nanoscale conductive film prepared according to embodiments of the disclosure and that are prepared by an existing approach, respectively.
- FIGS. 7C and 7D are further enlarged photo diagrams of the nanoscale conductive films shown in FIGS. 7A and 7B , respectively.
- FIG. 8A is an enlarged photo diagram of a nanoscale conductive film prepared according to embodiments of the disclosure.
- FIG. 8B is a diagram showing the haze, before and after etching, of a nanoscale conductive film prepared according to embodiments of the disclosure.
- FIGS. 9A and 9B are schematic diagrams showing optical performance of a nanoscale conductive film prepared by an existing approach.
- FIGS. 10A and 10B are schematic diagrams of a nanoscale conductive film prepared according to embodiments of the disclosure.
- FIG. 11 is a schematic cross-sectional view of a touch-panel display device, in accordance with embodiments of the disclosure.
- FIG. 12 is a schematic cross-sectional view of a touch-panel display device, in accordance with other embodiments of the disclosure.
- FIG. 13 is a schematic cross-sectional view of a touch-panel display device, in accordance with yet another embodiment of the disclosure.
- FIG. 14 is a schematic cross-sectional view of a touch-panel display device, in accordance with still other embodiments of the disclosure.
- FIG. 15 is a schematic cross-sectional view of a touch-panel display device, in accordance with yet still other embodiments of the disclosure.
- FIGS. 1A to 1D are schematic diagrams showing a method of manufacturing a nanoscale conductive film, in accordance with various embodiments of the disclosure.
- a nano base film 10 is provided, according to the method.
- the nanoscale base film 10 includes a substrate 11 , a first overcoat 13 on one side of the substrate 11 , and a first nano material layer 12 laminated between the substrate 11 and the first overcoat 13 .
- the substrate 11 includes a flexible, optically transmissive material such as polyethylene terephthalate (PET).
- PET polyethylene terephthalate
- the first overcoat 13 includes a material that is organic and porous.
- the first nano material layer 12 includes silver nanowire (SNW) in a wire grid pattern having a reduced wire diameter below 100 nanometers (nm) due to nanonization.
- the SNW is approximately 200 micrometers (um) in length and 50 nm in diameter, resulting in an aspect ratio of approximately 4000.
- Silver has excellent electrical conductivity, which is 100 times greater than indium tin oxide (ITO), and thus provides a faster response speed than ITO.
- ITO indium tin oxide
- the optical transmittance of SNW can reach as high as 92%.
- SNW possesses relatively high optical transmittance as well as high electrical conductivity.
- the first nano material layer 12 includes one of gold (Au), palladium (Pd), platinum (Pt), copper (Cu) and nickel (Ni), or another suitable nano material.
- a first patterned insulating layer 14 is formed on the first overcoat 13 by, for example, coating an insulating layer on the first overcoat 13 followed by a printing, developing or transfer printing process.
- the first patterned insulating layer 14 exposes portions of the first overcoat 13 , and as a result defines, in the first nano material layer 12 , first regions 121 masked by the first patterned insulating layer 14 and second regions 122 not masked by the first patterned insulating layer 14 .
- a suitable material for the first patterned insulating layer 14 includes polyimide (PI).
- the first patterned insulating layer 14 includes a material having optical properties compatible with the first nano material layer 12 .
- the first patterned insulating layer 14 has an index of refraction ranging from approximately 1.7 to 1.8.
- the first insulating layer 14 may include an organic material, which has an index of refraction ranging from approximately 1.4 to 1.5.
- the nano base film 10 is etched, using the first patterned insulating layer 14 as a mask, in a current generation system 15 . Consequently, the first regions 121 are electrically isolated from each other by the second regions 122 .
- the current generation system 15 includes a dielectric barrier discharge (DBD) type current generation system or an arc jet type current generation system.
- DBD dielectric barrier discharge
- the current generation system 15 refers to a mechanism that generates electric current based on the principle of high voltage discharge, in which a relatively high voltage of, for example, over 6000 volts is applied across dedicated electrodes while introducing a suitable amount of clean dry air (CDA) or nitrogen (N 2 ) or a combination thereof as a reactive gas.
- CDA clean dry air
- N 2 nitrogen
- the current generation system 15 eliminates a vacuum chamber, and thus significantly reduces the process time and cost.
- the etching performance is rather limited. Consequently, for example, only surface particles are removed without completely damaging the material or structure of an object under etch.
- the first patterned insulating layer 14 may include an arbitrary insulating material.
- the method achieves an effective etching to define the electrical characteristics of the first nano material layer 12 . Effectively, the first regions 121 maintain the original electrical conductivity while the second regions 122 lose electrical conductivity. Moreover, damage of the first overcoat 13 is significantly reduced, thereby maintaining the optical properties of the nano base film 10 .
- the first patterned insulating layer 14 is then removed, resulting in a nanoscale conductive film 20 .
- the first patterned insulating layer 14 includes a material having optical properties compatible with the first nano material layer 12 , there is no need to remove the first patterned insulating layer 14 .
- the risk that the first overcoat 13 may be harmed by the process of removing can be reduced.
- the nanoscale conductive film 20 in implementation may serve as a sensing electrode layer for a touch-panel display device.
- FIGS. 2A to 2D are schematic diagrams showing a method of manufacturing a nanoscale conductive film, in accordance with some embodiments.
- a first patterned insulating layer 14 is formed on a first overcoat 13 of a nano base film 10 by, for example, coating an insulating layer on the first overcoat 13 followed by a printing, developing or transfer printing process.
- the first patterned insulating layer 14 includes longitudinal insulators spaced apart from each other.
- the insulators of the first patterned insulating layer 14 may take the form of other suitable shapes such as triangles or trapezoids arranged in an interleaved configuration.
- the first nano material layer 12 is etched, using the first patterned insulating layer 14 as a mask, in a current generation system 15 .
- the current generation system 15 includes a DBD system, in which the first nano material layer 12 is etched under the action of an electrode 16 along a predetermined direction (shown by a bold arrow).
- the current generation system 15 includes an arc jet system, in which the first nano material layer 12 is etched under the mask of the first patterned insulating layer 14 by a nozzle 17 along a predetermined path (indicated by an arrow).
- the first patterned insulating layer 14 is then removed, resulting in a nanoscale conductive film 20 .
- the first patterned insulating layer 14 includes a material having optical properties compatible with the first nano material layer 12 , there is no need to remove the first patterned insulating layer 14 .
- the risk that the first overcoat 13 may be harmed by the process of removing can be reduced.
- the first nano material layer 12 of the nanoscale conductive film 20 multiple first regions 121 and multiple second regions 122 are defined. Specifically, in the etching process shown in FIGS.
- the first regions 121 are masked by the first patterned insulating layer 14 while the second regions 122 are not masked by the first patterned insulating layer 14 . Consequently, after the etching process, the first regions 121 are electrically isolated from each other by the second regions 122 in the first nano material layer 12 .
- FIGS. 3A to 3D are schematic diagrams showing a method of manufacturing a nanoscale conductive film, in accordance with some embodiments.
- a nano base film 28 is provided, according to the method.
- the nanoscale base film 10 includes a substrate 11 , a first overcoat 13 on one side of the substrate 11 , a first nano material layer 12 laminated between the substrate 11 and the first overcoat 13 , a second overcoat 23 on the other side of the substrate 11 , and a second nano material layer 22 laminated between the substrate 11 and the second overcoat 23 .
- the second overcoat 23 and the second nano material layer 22 are similar to or identical with the first overcoat 13 and the first nano material layer 12 , respectively, in material and structure, and therefore are not discussed.
- a first patterned insulating layer 14 and a second patterned insulating layer 24 are respectively formed on the first overcoat 13 and second overcoat 23 by, for example, coating an insulating layer on the first overcoat 13 and the second overcoat 23 followed by a printing, developing or transfer printing process.
- the second patterned insulating layer 24 is similar to or identical with the first patterned insulating layer 14 in material and optical characteristics, and therefore is not discussed.
- the first nano material layer 12 is etched, using the first patterned insulating layer 14 as a mask, in a current generation system 15 .
- the second nano material layer 22 is etched, using the second patterned insulating layer 24 as a mask, in another current generation system 25 such as a DBD system.
- the first nano material layer 12 and the second nano material layer 22 are etched under the action of electrodes 16 and 26 , respectively, along a predetermined direction (shown in a bold arrow).
- the electrodes 16 and 26 may move in different directions or move independently of each other.
- the first nano material layer 12 is etched first, using the first patterned insulating layer 14 as a mask under the action of the electrode 16 in the current generation system 15 .
- the second nano material layer 22 is etched, using the second patterned insulating layer 24 as a mask under the action of the electrode 16 in the same current generation system 15 .
- the second nano material layer 22 may be etched first, using the second patterned insulating layer 24 as a mask under the action of the electrode 26 in the current generation system 25 . Subsequently, the first nano material layer 12 is etched, using the first patterned insulating layer 14 as a mask under the action of the electrode 26 in the same current generation system 25 .
- the first nano material layer 12 is etched, using the first patterned insulating layer 14 as a mask, by a nozzle 17 along a predetermined path (indicated by an arrow) in an arc jet type current generation system.
- the second nano material layer 22 is etched, using the second patterned insulating layer 24 as a mask, by a nozzle 27 along a predetermined path in another arc jet type current generation system.
- the first nano material layer 12 is etched first, using the first patterned insulating layer 14 as a mask, by the nozzle 17 along a predetermined path in an arc jet type current generation system.
- the second nano material layer 22 is etched, using the second patterned insulating layer 24 as a mask, by the nozzle 17 along a predetermined path in the same arc jet type current generation system.
- the second nano material layer 22 may be etched first, using the second patterned insulating layer 24 as a mask, by the nozzle 27 along a predetermined path in an arc jet type current generation system. Subsequently, the first nano material layer 12 is etched, using the first patterned insulating layer 14 as a mask, by the nozzle 27 along a predetermined path in the same arc jet type current generation system. In some embodiments, the nozzles 17 and 27 may move in different directions or move independently of each other.
- the first patterned insulating layer 14 and the second patterned insulating layer 24 are then removed, resulting in a nanoscale conductive film 30 .
- the first patterned insulating layer 14 and the second patterned insulating layer 24 include a material having optical properties compatible with the first nano material layer 12 and the second nano material layer 22 , there is no need to remove the first patterned insulating layer 14 and the second patterned insulating layer 24 .
- the risk that the first overcoat 13 or the second overcoat 23 may be harmed by the process of removing can be reduced.
- first regions 121 and multiple second regions 122 are defined. Specifically, in the etching process shown in FIGS. 3B and 3C , the first regions 121 are masked by the first patterned insulating layer 14 while the second regions 122 are not masked by the first patterned insulating layer 14 . Consequently, after the etching process, the first regions 121 are electrically isolated from each other by the second regions 122 in the first nano material layer 12 .
- first regions 221 and multiple second regions 222 are defined. Specifically, in the etching process shown in FIGS.
- the first regions 221 are masked by the second patterned insulating layer 24 while the second regions 222 are not masked by the second patterned insulating layer 24 . Consequently, after the etching process the first regions 221 are electrically isolated from each other by the second regions 222 in the second nano material layer 22 .
- the second patterned insulating layer 24 has a different pattern from the first patterned insulating layer 14 .
- the insulators of the second patterned insulating layer 24 are arranged in a first direction (for example, the X direction), while the insulators of the first patterned insulating layer 14 are arranged in a second direction (for example, the Y direction).
- sensing electrodes formed on different sides of the substrate 11 may extend in different directions.
- FIGS. 4A and 4B are schematic diagrams showing a method of manufacturing a nanoscale conductive film, in accordance with some embodiments.
- a nano base film 10 is provided.
- first regions and second regions are defined in advance in the first nano material layer 12 of the nano base film 10 .
- the first regions are configured to keep electrical conductivity, while the second regions are configured to lose electrical conductivity.
- an etching path (indicated by an arrow) is defined by the second regions.
- the second regions in the first nano material layer 12 of the nano base film 10 are etched by a nozzle 17 in an arc jet type current generation system so that in the first nano material layer 12 the first regions are electrically isolated from each other by the second regions.
- the nano base film 10 is etched along the etching path defined by the second regions.
- a nanoscale conductive film 40 is achieved after the nano base film 10 is etched.
- the first nano material layer 12 of the nanoscale conductive film 40 includes first regions 121 and second regions 122 , in which the first regions 121 are electrically isolated from each other by the second regions 122 .
- FIGS. 5A and 5B are schematic diagrams showing a method of manufacturing a nanoscale conductive film, in accordance with some embodiments.
- a nano base film 28 is provided.
- first regions and second regions are defined in advance in each of the first nano material layer 12 and the second nano material layer 22 of the nano base film 28 .
- the first regions are configured to keep electrical conductivity, while the second regions are configured to lose electrical conductivity.
- an etching path (indicated by an arrow) is defined by the second regions.
- the second regions in the first nano material layer 12 of the nano base film 28 are etched by a nozzle 17 in an arc jet type current generation system so that in the first nano material layer 12 the first regions are electrically isolated from each other by the second regions.
- the second regions in the second nano material layer 22 of the nano base film 28 are etched by a nozzle 27 in another arc jet type current generation system so that in the second nano material layer 22 the first regions are electrically isolated from each other by the second regions.
- the nano base film 28 is etched along the etching path defined by the second regions.
- the first nano material layer 12 is etched first by a nozzle 17 along an etching path associated with the first nano material layer 12 in an arc jet type current generation system. Subsequently, the second nano material layer 22 is etched by the nozzle 17 along an etching path associated with the second nano material layer 22 in the same arc jet type current generation system.
- the second nano material layer 22 may be etched first by a nozzle 17 along an etching path associated with the second nano material layer 22 in an arc jet type current generation system. Subsequently, the first nano material layer 12 is etched by a nozzle 27 along an etching path associated with the first nano material layer 12 in the same arc jet type current generation system. Moreover, the nozzles 17 and 27 may move in different directions or move independently of each other. As a result, the sensing electrodes on the two sides of the substrate 11 as illustrated in FIG. 5B may be arranged in different directions.
- the first nano material layer 12 is electrically conductive in a first direction (such as the X direction) and is not electrically conductive in a second direction (such as the Y direction). Further, the second nano material layer 22 is not electrically conductive in the first direction (the X direction) and is electrically conductive in the second direction (the Y direction).
- a nanoscale conductive film 50 is achieved after the nano base film 28 is etched.
- the first nano material layer 12 of the nanoscale conductive film 50 includes first regions 121 and second regions 122 , in which the first regions 121 are electrically isolated from each other by the second regions 122 .
- the second nano material layer 22 of the nanoscale conductive film 50 includes first regions 221 and second regions 222 , in which the first regions 221 are electrically isolated from each other by the second regions 222 .
- FIGS. 6A and 6B are enlarged photo diagrams of a nanoscale conductive film before etching.
- FIG. 6A is a photo image of an SNW conductive film taken by a scanning electron microscope (SEM)
- FIG. 6B is a photo image of the SNW conductive film taken by a three-dimensional (3D) laser microscope.
- SEM scanning electron microscope
- FIGS. 6A and 6B silver nanowires in the SNW conductive film extend arbitrarily and interweave randomly in a high electrically conductive network.
- the SNW conductive film exhibits excellent optical transparency, and has a relatively high electrical conductivity as well as high optical transmittance.
- FIGS. 7A and 7B are enlarged photo diagrams of a nanoscale conductive film prepared according to some embodiments and a nanoscale conductive film prepared by an existing approach, respectively.
- the silver nanowires after etching are simply broken apart and not completely removed. As a result, the electrical conductivity of the SNW conductive film has been damaged, but the optical characteristics thereof are maintained.
- the nanoscale conductive film prepared by the existing approach the silver nanowires after etching have been substantially completely removed. Consequently, even though the electrical conductivity of such nanoscale conductive film is lost, the optical characteristics thereof are damaged as well and thus are quite different from those before etching.
- FIGS. 7C and 7D are further enlarged photo diagrams of the nanoscale conductive films shown in FIGS. 7A and 7B , respectively.
- FIGS. 7C and 7D show the striking differences between the nanoscale conductive film prepared according to some embodiments and that prepared by an existing approach.
- FIG. 8A is an enlarged photo diagram of a nanoscale conductive film prepared according to some embodiments.
- FIG. 8A it can be found that broken points at the silver nanowires of the SNW conductive film seem to have been melted. Such a phenomenon is caused by the high voltage of the current generation system and the accompanying heat generated thereby.
- the etching since current-based etching in an atmospheric environment has a limited effect, the etching only breaks the silver nanowires without completely destroying the structure of an SNW.
- the methods according to the embodiments are able to achieve the desirable etching effect so as to define the electrical characteristics of a nanoscale conductive film while maintaining its optical characteristics.
- FIG. 8B is a diagram showing the haze, before and after etching, of a nanoscale conductive film prepared according to some embodiments.
- the solid line indicates that the haze before etching (for example, at time T 0 ) of an SNW conductive film prepared according to at least one of the embodiments described is approximately 0.8%, and the haze after etching (for example, at time T 1 ) is also approximately 0.8%. Accordingly, there is no substantial change in the haze before and after etching.
- the difference of haze between the first regions not having been etched and the second regions having been etched is not greater than 0.3%, and preferably not greater than 0.1%.
- the dotted line indicates that the haze before etching (for example, at time T 0 ) of an SNW conductive film prepared by an existing approach is approximately 0.8%, and the haze after etching (for example, at time T 1 ) is also approximately 0.4%. Accordingly, the difference of haze is greater than 0.3%, which means a significant change.
- haze in a general definition refers to the measure of scattering calculated by the ratio in percentages between the flux of diffused light deflecting off the incident direction when transmits through a sample and the flux of transmitted light. To calculate haze ratio, the flux of diffused light that deflects off an incident direction by 2.5 degrees or above is taken into consideration.
- FIGS. 9A and 9B are schematic diagrams showing optical performance of a nanoscale conductive film prepared by an existing approach.
- the optical characteristics of first regions (conductive regions) 321 not having been etched and those of second regions (non-conductive regions) 322 having been etched are significantly different because nanowires in the second regions have been substantially removed during the etching process and thus the second regions exhibit significant color difference.
- the overcoat of the nanoscale conductive film may also be damaged by the etching, which further degrades the optical characteristics of the nanoscale conductive film.
- FIGS. 10A and 10B are schematic diagrams of a nanoscale conductive film prepared according to some embodiments.
- the optical characteristics of first regions (conductive regions) 421 not having been etched and those of second regions (non-conductive regions) 422 having been etched are not significantly different from each other because only nanowires in the second regions 422 are broken off and the structure of the second regions 422 is not adversely affected.
- the overcoat of the nanoscale conductive film is obviously not damaged by the etching and thus the optical characteristics of the nanoscale conductive film are largely maintained.
- FIG. 11 is a schematic cross-sectional view of a touch-panel display device 110 , in accordance with various embodiments.
- the touch-panel display device 110 includes a touch panel 60 and a display module 66 .
- the touch panel 60 includes a transparent substrate 71 , a first sensing electrode layer 91 and a masking layer 75 .
- the transparent substrate 71 has a first surface 711 and a second surface 712 on opposite sides of the transparent substrate 71 , respectively.
- the first sensing electrode layer 91 is disposed on the first surface 711 of the transparent substrate 71 .
- the masking layer 75 is also disposed on the first surface 711 of the transparent substrate 71 and surrounds the first sensing electrode layer 91 .
- the transparent substrate 71 includes an optically transmissive material selected from glass, polymethyl methacrylate (PMMA), polyether sulfone (PES), polyacrylate, polyphenyl sulfide, poly allyl, polycarbonate, polyvinyl chloride (PVC), polypropylene (PP), polyethylene terephthalate (PET), polyethylene naphthalate (PEN), polycarbonate (PC) and polystyrene (PS).
- the masking layer 75 includes an optically opaque material selected from black photo resist, black resin or black ink.
- the first sensing electrode layer 91 includes a nanoscale conductive film 20 as illustrated in FIG. 2D or a nanoscale conductive film 40 as illustrated in FIG. 4B . Moreover, the first sensing electrode layer 91 has an electrode pattern in which electrodes, for example, first electrodes and second electrodes, extend in a same direction and interleave with each other.
- the touch panel 60 and the display module 66 are attached to each other by a first adhesive layer 81 .
- the first adhesive layer 81 includes optical clear resin (OCR) or optical clear adhesive (OCA). Further, the optical clear resin may include glue or optically transmissive, double-sided adhesive tape.
- the display module 66 includes a back-lit display such as a liquid crystal display (LCD), or a self-luminous display such as an organic light emitting diode (OLED) display.
- FIG. 12 is a schematic cross-sectional view of a touch-panel display device 120 , in accordance with various embodiments.
- the touch-panel display device 120 includes a touch panel 70 that further includes a first carrier 72 between the transparent substrate 71 and the display module 66 .
- the first sensing electrode layer 91 disposed on a surface of the first carrier 72 , is attached to the transparent substrate 71 by the first adhesive layer 81 .
- the opposite surface of the first carrier 72 is attached to the display module 66 by a second adhesive layer 82 .
- the first carrier 72 includes an optically transmissive material selected from glass, polymethyl methacrylate (PMMA), polyether sulfone (PES), polyacrylate, polyphenyl sulfide, poly allyl, polycarbonate, polyvinyl chloride (PVC), polypropylene (PP), polyethylene terephthalate (PET), polyethylene naphthalate (PEN), polycarbonate (PC) and polystyrene (PS).
- the second adhesive layer 82 includes optical clear resin (OCR) or optical clear adhesive (OCA).
- FIG. 13 is a schematic cross-sectional view of a touch-panel display device 130 , in accordance with various embodiments.
- the touch-panel display device 130 includes a touch panel 80 , in which a first sensing electrode layer 91 is disposed on a surface of the first carrier 72 and attached to the transparent substrate 71 by a first adhesive layer 81 , and a second sensing electrode layer 92 is disposed on the opposite surface of the first carrier 72 and attached to the display module 66 by a second adhesive layer 82 .
- the second sensing electrode layer 92 includes a nanoscale conductive film 20 as illustrated in FIG. 2D or a nanoscale conductive film 40 as illustrated in FIG. 4B .
- the first sensing electrode layer 91 includes first electrodes arranged in a first direction and second electrodes arranged in a second direction, which is substantially orthogonal to the first direction.
- the first and second sensing electrodes 91 and 92 may include electrodes prepared by the methods described and illustrated with reference to FIGS. 3A and 3B , FIGS. 3C and 3D , or FIGS. 5A and 5B , and arranged in different directions.
- FIG. 14 is a schematic cross-sectional view of a touch-panel display device 140 , in accordance with various embodiments.
- the touch-panel display device 140 includes a touch panel 90 , in which a first sensing electrode layer 91 is disposed on a surface of the transparent substrate 71 , and a second sensing electrode layer 92 is disposed on a surface of the first carrier 72 .
- the first sensing electrode layer 91 and the second sensing electrode layer 92 are attached to each other by a first adhesive layer 81 .
- the opposite surface of the first carrier 72 is attached to the display module 66 by a second adhesive layer 82 .
- FIG. 15 is a schematic cross-sectional view of a touch-panel display device 150 , in accordance with various embodiments.
- the touch-panel display device 150 includes a touch panel 100 that further includes a first carrier 72 between a transparent substrate 71 and a display module 66 , and a second carrier 73 between the first carrier 72 and the display module 66 .
- a first sensing electrode layer 91 is disposed on a surface of the first carrier 72
- a second sensing electrode layer 92 is disposed on a surface of the second carrier 73 .
- the opposite surface of the first carrier 72 is attached to the transparent substrate 71 by a first adhesive layer 81 .
- the first sensing electrode layer 91 and the second sensing electrode layer 92 are attached to each other by a second adhesive layer 82 . Furthermore, the opposite surface of the second carrier 73 is attached to the display module 66 by a third adhesive layer 83 .
- the second carrier 73 includes an optically transmissive material selected from glass, polymethyl methacrylate (PMMA), polyether sulfone (PES), polyacrylate, polyphenyl sulfide, poly allyl, polycarbonate, polyvinyl chloride (PVC), polypropylene (PP), polyethylene terephthalate (PET), polyethylene naphthalate (PEN), polycarbonate (PC) and polystyrene (PS).
- the third adhesive layer 83 includes optical clear resin (OCR) or optical clear adhesive (OCA).
- the methods of forming nanoscale conductive films in accordance with the embodiments of the disclosure can effectively achieve a desired etching effect in order to define the electrical characteristics of the nanoscale conductive films so that conductive regions are electrically isolated from each other by non-conductive regions in the nanoscale conductive films. Moreover, the methods can effectively reduce damage on an overcoat of a nanoscale conductive film caused during an etching process and maintain the optical characteristics of the nanoscale conductive film. Furthermore, compared to some existing approaches of forming nanoscale conductive films, the methods can significantly reduce manufacturing time. In addition, the etching process for the nanoscale conductive films prepared by the methods is conducted in a current generation system.
- conductive regions and non-conductive regions exhibit no obvious difference in optical performance.
- the haze difference is not greater than 0.3% or even 0.1%, which makes it possible to hide the wiring in a touch-panel display device and thus adds an aesthetic touch to the appearance of the touch-panel display device.
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Abstract
The present disclosure provides a touch-panel display device. The touch-panel device comprises a transparent substrate including a first surface and a second surface on opposite sides of the transparent substrate, respectively, a display module at the first surface side of the transparent substrate, and a first sensing electrode layer, disposed between the transparent substrate and the display module, including a first nanostructure layer having first regions and second regions, the first regions being electrically isolated from each other by the second regions, and a haze difference between the first regions and the second regions is not greater than 0.1%.
Description
- This application claims priority under 35 U.S.C. § 120 to a non-provisional U.S. patent application Ser. No. 14/934,174 filed on Nov. 6, 2015, which claims priority under 35 U.S.C. § 119(a) to China Application Serial Number 201410624691.2, filed Nov. 7, 2014, which is herein incorporated by reference.
- The present disclosure relates to conductive films and, more particularly, to a touch device including the nanoscale conductive film.
- Touch panels or touch screens have become more and more popular in electronic devices including, in particular, portable or hand-held devices such as personal digital assistants (PDAs) and mobile phones. In some touch-panel display devices, indium tin oxide (ITO) is still a required transparent conductive material. However, it has always been an important topic in the touch panel industry to seek an alternative material for ITO conductive films, no matter whether the motivation is due to the fact that ITO has disadvantages (such as brittleness and inflexibility) or for cost reduction. Nanoscale conductive films, such as silver nanowire (SNW) transparent conductive films, possess the properties of excellent electrical conductivity and optical transmittance as well as cost efficiency, and thus have become a powerful candidate as an alternative to ITO conductive films.
- In some existing manufacturing approaches, a wet etching process is used to define the electric characteristics of an SNW conductive film. SNW conductive film includes an overcoat for securing an SNW coating on a substrate and protecting the SNW coating from oxidation or vulcanization due to ambient molecule reaction in the air. Nevertheless, the overcoat may on the other hand significantly reduce the interaction between the etchant and the SNW, resulting in uneven etch, insufficient etch and a large haze change after etch. Moreover, residue of the etchant may be left over after the etching process, which may cause a subsequently formed SNW conductive film to degrade in electrical characteristics.
- In addition, in some existing manufacturing approaches, a dry etching process is used to define the electrical characteristics of an SNW conductive film by, for example, bombarding an SNW conductive film by etchant particles in a vacuum environment. However, such etching processes may not effectively protect the overcoat and thus the SNW conductive film may be liable to degrade in electrical characteristics.
- Given the above, it can be found that effectively changing the electric characteristics of a nanoscale conductive film while maintaining its optical transmittance and haze is an important topic in the field of touch panel display device.
- The present disclosure provides a touch-panel display device to overcome or alleviate the above-mentioned issues.
- Some embodiments provide a touch-panel display device. The touch-panel device comprises a transparent substrate including a first surface and a second surface on opposite sides of the transparent substrate, respectively, a display module at the first surface side of the transparent substrate, and a first sensing electrode layer, disposed between the substrate and the display module, including a first nanostructure layer having first regions and second regions, the first regions being electrically isolated from each other by the second regions, and a haze difference between the first regions and the second regions is not greater than 0.1%.
- In an embodiment, the first sensing electrode layer is disposed on the first surface of the transparent substrate, and includes first electrodes and second electrodes interleaved with each other in the first regions.
- In another embodiment, the touch-panel display device further comprises a first carrier configured to support the first sensing electrode layer between the transparent substrate and the display module, and comprises first electrodes and second electrodes interleaved with each other in the first regions.
- In yet another embodiment, the touch-panel display device further comprises a first carrier and a second sensing electrode layer. The first carrier is disposed between the transparent substrate and the display module. The first sensing electrode layer is disposed on a first surface of the first carrier, and the second sensing electrode layer is disposed on a second surface of the first carrier, wherein the first surface and second surface are on opposite sides of the first carrier.
- In still another embodiment, the second sensing electrode layer includes a second nanostructure layer having first regions and second regions. Moreover, the first regions are electrically isolated from each other by the second regions. In addition, a haze difference between the first regions and the second regions in the second nanostructure layer is not greater than 0.1%.
- In yet still another embodiment, the first sensing electrode layer includes in the first regions thereof first electrodes arranged in a first direction, and the second sensing electrode layer includes in the first regions thereof second electrodes arranged in a second direction.
- In another embodiment, the touch-panel display device further comprises a first carrier and a second sensing electrode layer. The first carrier is disposed between the transparent substrate and the display module, wherein the first sensing electrode layer is disposed on a first surface of the first carrier and the second sensing electrode layer is disposed, between the first sensing electrode layer and the first carrier, on the first carrier.
- In still another embodiment, the second sensing electrode layer includes a second nanostructure layer having first regions and second regions. Moreover, the first regions are electrically isolated from each other by the second regions. In addition, a haze difference between the first regions and the second regions in the second nanostructure layer is not greater than 0.1%.
- In yet still another embodiment, the first sensing electrode layer includes in the first regions thereof first electrodes arranged in a first direction, and the second sensing electrode layer includes in the first regions thereof second electrodes arranged in a second direction.
- In the above-mentioned embodiments, the methods can effectively achieve a desired etching effect in order to define the electrical characteristics of a nanoscale conductive film. As a result, conductive regions are electrically isolated from each other by non-conductive regions in the nanoscale conductive film.
- Moreover, the methods can effectively reduce damage on an overcoat of a nanoscale conductive film caused during an etching process, and maintain the optical characteristics of the nanoscale conductive film.
- Furthermore, compared to some existing approaches of forming nanoscale conductive films, the methods can significantly reduce the manufacturing time. In addition, the etching process for a nanoscale conductive film prepared by the methods is conducted in a current generation system. As a result, conductive regions and non-conductive regions, either before or after etching, exhibit no obvious difference in optical performance. For example, the haze difference is not greater than 0.3% or even 0.1%, which makes it more possible to hide the wiring in a touch-panel display device and thus adds an aesthetic touch to the appearance of the touch-panel display device.
- The foregoing has outlined rather broadly the features and technical advantages of the disclosure in order that the detailed description that follows may be better understood. Additional features and advantages will be described hereinafter, and form the subject of the claims. It should be appreciated by persons having ordinary skill in the art that the conception and specific embodiments disclosed may be readily utilized as a basis for modifying or designing other structures or processes for carrying out the same purposes. It should also be realized by persons having ordinary skill in the art that such equivalent constructions do not depart from the spirit and scope of the disclosure as set forth in the appended claims.
- Embodiments, or examples, of the disclosure illustrated in the drawings are now described using specific languages. It will nevertheless be understood that no limitation of the scope of the disclosure is thereby intended. Any alterations and modifications in the described embodiments, and any further applications of principles described in this document are contemplated as would normally occur to persons having ordinary skill in the art to which the disclosure relates. Reference numerals may be repeated throughout the embodiments, but this does not necessarily require that feature(s) of one embodiment apply to another embodiment, even if they share the same reference number.
- It will be understood that when an element is referred to as being “connected to” or “coupled to” another element, it may be directly connected to or coupled to the other element, or intervening elements may be present.
- The objectives and advantages are illustrated with the following description and upon reference to the accompanying drawings, in which:
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FIGS. 1A to 1D are schematic diagrams showing a method of manufacturing a nanoscale conductive film, in accordance with various embodiments. -
FIGS. 2A to 2D are schematic diagrams showing a method of manufacturing a nanoscale conductive film, in accordance with other embodiments of the disclosure. -
FIGS. 3A to 3D are schematic diagrams showing a method of manufacturing a nanoscale conductive film, in accordance with yet other embodiments of the disclosure. -
FIGS. 4A and 4B are schematic diagrams showing a method of manufacturing a nanoscale conductive film, in accordance with still other embodiments of the disclosure. -
FIGS. 5A and 5B are schematic diagrams showing a method of manufacturing a nanoscale conductive film, in accordance with yet still other embodiments of the disclosure. -
FIGS. 6A and 6B are enlarged photo diagrams of a nanoscale conductive film before etching. -
FIGS. 7A and 7B are enlarged photo diagrams of a nanoscale conductive film prepared according to embodiments of the disclosure and that are prepared by an existing approach, respectively. -
FIGS. 7C and 7D are further enlarged photo diagrams of the nanoscale conductive films shown inFIGS. 7A and 7B , respectively. -
FIG. 8A is an enlarged photo diagram of a nanoscale conductive film prepared according to embodiments of the disclosure. -
FIG. 8B is a diagram showing the haze, before and after etching, of a nanoscale conductive film prepared according to embodiments of the disclosure. -
FIGS. 9A and 9B are schematic diagrams showing optical performance of a nanoscale conductive film prepared by an existing approach. -
FIGS. 10A and 10B are schematic diagrams of a nanoscale conductive film prepared according to embodiments of the disclosure. -
FIG. 11 is a schematic cross-sectional view of a touch-panel display device, in accordance with embodiments of the disclosure. -
FIG. 12 is a schematic cross-sectional view of a touch-panel display device, in accordance with other embodiments of the disclosure. -
FIG. 13 is a schematic cross-sectional view of a touch-panel display device, in accordance with yet another embodiment of the disclosure. -
FIG. 14 is a schematic cross-sectional view of a touch-panel display device, in accordance with still other embodiments of the disclosure. -
FIG. 15 is a schematic cross-sectional view of a touch-panel display device, in accordance with yet still other embodiments of the disclosure. - The embodiments of the disclosure are shown in the following description with the drawings, wherein similar or same components are indicated by similar reference numbers.
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FIGS. 1A to 1D are schematic diagrams showing a method of manufacturing a nanoscale conductive film, in accordance with various embodiments of the disclosure. Referring toFIG. 1A , initially anano base film 10 is provided, according to the method. Thenanoscale base film 10 includes asubstrate 11, afirst overcoat 13 on one side of thesubstrate 11, and a firstnano material layer 12 laminated between thesubstrate 11 and thefirst overcoat 13. In some embodiments, thesubstrate 11 includes a flexible, optically transmissive material such as polyethylene terephthalate (PET). In addition, thefirst overcoat 13 includes a material that is organic and porous. Moreover, the firstnano material layer 12 includes silver nanowire (SNW) in a wire grid pattern having a reduced wire diameter below 100 nanometers (nm) due to nanonization. For example, the SNW is approximately 200 micrometers (um) in length and 50 nm in diameter, resulting in an aspect ratio of approximately 4000. Silver has excellent electrical conductivity, which is 100 times greater than indium tin oxide (ITO), and thus provides a faster response speed than ITO. Moreover, by controlling wire distribution density, the optical transmittance of SNW can reach as high as 92%. As a result, SNW possesses relatively high optical transmittance as well as high electrical conductivity. In some embodiments, the firstnano material layer 12 includes one of gold (Au), palladium (Pd), platinum (Pt), copper (Cu) and nickel (Ni), or another suitable nano material. - Referring to
FIG. 1B , a first patterned insulatinglayer 14 is formed on thefirst overcoat 13 by, for example, coating an insulating layer on thefirst overcoat 13 followed by a printing, developing or transfer printing process. The first patterned insulatinglayer 14 exposes portions of thefirst overcoat 13, and as a result defines, in the firstnano material layer 12,first regions 121 masked by the first patterned insulatinglayer 14 andsecond regions 122 not masked by the first patterned insulatinglayer 14. In some embodiments, a suitable material for the first patterned insulatinglayer 14 includes polyimide (PI). In some embodiments, the first patterned insulatinglayer 14 includes a material having optical properties compatible with the firstnano material layer 12. For example, the first patterned insulatinglayer 14 has an index of refraction ranging from approximately 1.7 to 1.8. Moreover, the first insulatinglayer 14 may include an organic material, which has an index of refraction ranging from approximately 1.4 to 1.5. - Referring to
FIG. 1C , thenano base film 10 is etched, using the first patterned insulatinglayer 14 as a mask, in acurrent generation system 15. Consequently, thefirst regions 121 are electrically isolated from each other by thesecond regions 122. In some embodiments, thecurrent generation system 15 includes a dielectric barrier discharge (DBD) type current generation system or an arc jet type current generation system. - The
current generation system 15 refers to a mechanism that generates electric current based on the principle of high voltage discharge, in which a relatively high voltage of, for example, over 6000 volts is applied across dedicated electrodes while introducing a suitable amount of clean dry air (CDA) or nitrogen (N2) or a combination thereof as a reactive gas. Compared to an existing vacuum bombarding system, thecurrent generation system 15 eliminates a vacuum chamber, and thus significantly reduces the process time and cost. Moreover, since in an atmospheric environment the mean free path of electric current is reduced due to obstacles from air molecules, the etching performance is rather limited. Consequently, for example, only surface particles are removed without completely damaging the material or structure of an object under etch. As a result, damage caused by the etching process on thefirst overcoat 13 can be significantly reduced. Furthermore, in the nano metal wire such as SNW of the firstnano material layer 12, outer electrons may become unstable due to the energy of the high voltage applied, which causes the nano metal wire to break. Since electric current in the air would take the path of least resistance, the SNW structure in thesecond regions 122 not masked by the first patterned insulatinglayer 14 is damaged by the electric current and thus loses its electrical conductivity. In contrast, the SNW structure in thefirst regions 121 masked by the first patterned insulatinglayer 14 is not damaged by the electric current and thus keeps its electrical conductivity. Therefore, in some embodiments, the first patterned insulatinglayer 14 may include an arbitrary insulating material. The method achieves an effective etching to define the electrical characteristics of the firstnano material layer 12. Effectively, thefirst regions 121 maintain the original electrical conductivity while thesecond regions 122 lose electrical conductivity. Moreover, damage of thefirst overcoat 13 is significantly reduced, thereby maintaining the optical properties of thenano base film 10. - Referring to
FIG. 1D , the first patterned insulatinglayer 14 is then removed, resulting in a nanoscaleconductive film 20. In some embodiments, however, since the first patterned insulatinglayer 14 includes a material having optical properties compatible with the firstnano material layer 12, there is no need to remove the first patterned insulatinglayer 14. Advantageously, the risk that thefirst overcoat 13 may be harmed by the process of removing can be reduced. The nanoscaleconductive film 20 in implementation may serve as a sensing electrode layer for a touch-panel display device. -
FIGS. 2A to 2D are schematic diagrams showing a method of manufacturing a nanoscale conductive film, in accordance with some embodiments. Referring toFIG. 2A , a first patterned insulatinglayer 14 is formed on afirst overcoat 13 of anano base film 10 by, for example, coating an insulating layer on thefirst overcoat 13 followed by a printing, developing or transfer printing process. In some embodiments, the first patterned insulatinglayer 14 includes longitudinal insulators spaced apart from each other. In some embodiments, the insulators of the first patterned insulatinglayer 14 may take the form of other suitable shapes such as triangles or trapezoids arranged in an interleaved configuration. - Referring to
FIG. 2B , the firstnano material layer 12 is etched, using the first patterned insulatinglayer 14 as a mask, in acurrent generation system 15. In some embodiments, thecurrent generation system 15 includes a DBD system, in which the firstnano material layer 12 is etched under the action of anelectrode 16 along a predetermined direction (shown by a bold arrow). In some embodiments, referring toFIG. 2C , thecurrent generation system 15 includes an arc jet system, in which the firstnano material layer 12 is etched under the mask of the first patterned insulatinglayer 14 by anozzle 17 along a predetermined path (indicated by an arrow). - Referring to
FIG. 2D , the first patterned insulatinglayer 14 is then removed, resulting in a nanoscaleconductive film 20. In some embodiments, however, since the first patterned insulatinglayer 14 includes a material having optical properties compatible with the firstnano material layer 12, there is no need to remove the first patterned insulatinglayer 14. Advantageously, the risk that thefirst overcoat 13 may be harmed by the process of removing can be reduced. In the firstnano material layer 12 of the nanoscaleconductive film 20, multiplefirst regions 121 and multiplesecond regions 122 are defined. Specifically, in the etching process shown inFIGS. 2B and 2C , thefirst regions 121 are masked by the first patterned insulatinglayer 14 while thesecond regions 122 are not masked by the first patterned insulatinglayer 14. Consequently, after the etching process, thefirst regions 121 are electrically isolated from each other by thesecond regions 122 in the firstnano material layer 12. -
FIGS. 3A to 3D are schematic diagrams showing a method of manufacturing a nanoscale conductive film, in accordance with some embodiments. Referring toFIG. 3A , initially anano base film 28 is provided, according to the method. Thenanoscale base film 10 includes asubstrate 11, afirst overcoat 13 on one side of thesubstrate 11, a firstnano material layer 12 laminated between thesubstrate 11 and thefirst overcoat 13, asecond overcoat 23 on the other side of thesubstrate 11, and a secondnano material layer 22 laminated between thesubstrate 11 and thesecond overcoat 23. In some embodiments, thesecond overcoat 23 and the secondnano material layer 22 are similar to or identical with thefirst overcoat 13 and the firstnano material layer 12, respectively, in material and structure, and therefore are not discussed. - Next, a first patterned insulating
layer 14 and a second patterned insulatinglayer 24 are respectively formed on thefirst overcoat 13 andsecond overcoat 23 by, for example, coating an insulating layer on thefirst overcoat 13 and thesecond overcoat 23 followed by a printing, developing or transfer printing process. In some embodiments, the second patterned insulatinglayer 24 is similar to or identical with the first patterned insulatinglayer 14 in material and optical characteristics, and therefore is not discussed. - Referring to
FIG. 3B , the firstnano material layer 12 is etched, using the first patterned insulatinglayer 14 as a mask, in acurrent generation system 15. At the same time, the secondnano material layer 22 is etched, using the second patterned insulatinglayer 24 as a mask, in anothercurrent generation system 25 such as a DBD system. In some embodiments, the firstnano material layer 12 and the secondnano material layer 22 are etched under the action ofelectrodes electrodes - In some embodiments, the first
nano material layer 12 is etched first, using the first patterned insulatinglayer 14 as a mask under the action of theelectrode 16 in thecurrent generation system 15. Subsequently, the secondnano material layer 22 is etched, using the second patterned insulatinglayer 24 as a mask under the action of theelectrode 16 in the samecurrent generation system 15. - Similarly, the second
nano material layer 22 may be etched first, using the second patterned insulatinglayer 24 as a mask under the action of theelectrode 26 in thecurrent generation system 25. Subsequently, the firstnano material layer 12 is etched, using the first patterned insulatinglayer 14 as a mask under the action of theelectrode 26 in the samecurrent generation system 25. - Referring to
FIG. 3C , in some embodiments, the firstnano material layer 12 is etched, using the first patterned insulatinglayer 14 as a mask, by anozzle 17 along a predetermined path (indicated by an arrow) in an arc jet type current generation system. At the same time, the secondnano material layer 22 is etched, using the second patterned insulatinglayer 24 as a mask, by anozzle 27 along a predetermined path in another arc jet type current generation system. - In some embodiments, the first
nano material layer 12 is etched first, using the first patterned insulatinglayer 14 as a mask, by thenozzle 17 along a predetermined path in an arc jet type current generation system. Subsequently, the secondnano material layer 22 is etched, using the second patterned insulatinglayer 24 as a mask, by thenozzle 17 along a predetermined path in the same arc jet type current generation system. - Similarly, the second
nano material layer 22 may be etched first, using the second patterned insulatinglayer 24 as a mask, by thenozzle 27 along a predetermined path in an arc jet type current generation system. Subsequently, the firstnano material layer 12 is etched, using the first patterned insulatinglayer 14 as a mask, by thenozzle 27 along a predetermined path in the same arc jet type current generation system. In some embodiments, thenozzles - Referring to
FIG. 3D , the first patterned insulatinglayer 14 and the second patterned insulatinglayer 24 are then removed, resulting in a nanoscaleconductive film 30. In some embodiments, however, since the first patterned insulatinglayer 14 and the second patterned insulatinglayer 24 include a material having optical properties compatible with the firstnano material layer 12 and the secondnano material layer 22, there is no need to remove the first patterned insulatinglayer 14 and the second patterned insulatinglayer 24. Advantageously, the risk that thefirst overcoat 13 or thesecond overcoat 23 may be harmed by the process of removing can be reduced. - In the first
nano material layer 12 of the nanoscaleconductive film 30, multiplefirst regions 121 and multiplesecond regions 122 are defined. Specifically, in the etching process shown inFIGS. 3B and 3C , thefirst regions 121 are masked by the first patterned insulatinglayer 14 while thesecond regions 122 are not masked by the first patterned insulatinglayer 14. Consequently, after the etching process, thefirst regions 121 are electrically isolated from each other by thesecond regions 122 in the firstnano material layer 12. In addition, in the secondnano material layer 22 of the nanoscaleconductive film 30, multiplefirst regions 221 and multiplesecond regions 222 are defined. Specifically, in the etching process shown inFIGS. 3B and 3C , thefirst regions 221 are masked by the second patterned insulatinglayer 24 while thesecond regions 222 are not masked by the second patterned insulatinglayer 24. Consequently, after the etching process thefirst regions 221 are electrically isolated from each other by thesecond regions 222 in the secondnano material layer 22. - In some embodiments, the second patterned insulating
layer 24 has a different pattern from the first patterned insulatinglayer 14. For example, the insulators of the second patterned insulatinglayer 24 are arranged in a first direction (for example, the X direction), while the insulators of the first patterned insulatinglayer 14 are arranged in a second direction (for example, the Y direction). As such, after the etching process shown inFIG. 3B or 3C , sensing electrodes formed on different sides of thesubstrate 11 may extend in different directions. -
FIGS. 4A and 4B are schematic diagrams showing a method of manufacturing a nanoscale conductive film, in accordance with some embodiments. Referring toFIG. 4A , anano base film 10 is provided. Instead of forming an insulating layer on thenano base film 10, first regions and second regions are defined in advance in the firstnano material layer 12 of thenano base film 10. Moreover, the first regions are configured to keep electrical conductivity, while the second regions are configured to lose electrical conductivity. Furthermore, an etching path (indicated by an arrow) is defined by the second regions. - Subsequently, the second regions in the first
nano material layer 12 of thenano base film 10 are etched by anozzle 17 in an arc jet type current generation system so that in the firstnano material layer 12 the first regions are electrically isolated from each other by the second regions. In some embodiments, thenano base film 10 is etched along the etching path defined by the second regions. - Referring to
FIG. 4B , a nanoscaleconductive film 40 is achieved after thenano base film 10 is etched. The firstnano material layer 12 of the nanoscaleconductive film 40 includesfirst regions 121 andsecond regions 122, in which thefirst regions 121 are electrically isolated from each other by thesecond regions 122. -
FIGS. 5A and 5B are schematic diagrams showing a method of manufacturing a nanoscale conductive film, in accordance with some embodiments. Referring toFIG. 5A , anano base film 28 is provided. Instead of forming an insulating layer on thenano base film 28, first regions and second regions are defined in advance in each of the firstnano material layer 12 and the secondnano material layer 22 of thenano base film 28. Moreover, the first regions are configured to keep electrical conductivity, while the second regions are configured to lose electrical conductivity. Furthermore, an etching path (indicated by an arrow) is defined by the second regions. - Subsequently, the second regions in the first
nano material layer 12 of thenano base film 28 are etched by anozzle 17 in an arc jet type current generation system so that in the firstnano material layer 12 the first regions are electrically isolated from each other by the second regions. At the same time, the second regions in the secondnano material layer 22 of thenano base film 28 are etched by anozzle 27 in another arc jet type current generation system so that in the secondnano material layer 22 the first regions are electrically isolated from each other by the second regions. In some embodiments, thenano base film 28 is etched along the etching path defined by the second regions. - In some embodiments, the first
nano material layer 12 is etched first by anozzle 17 along an etching path associated with the firstnano material layer 12 in an arc jet type current generation system. Subsequently, the secondnano material layer 22 is etched by thenozzle 17 along an etching path associated with the secondnano material layer 22 in the same arc jet type current generation system. - Similarly, the second
nano material layer 22 may be etched first by anozzle 17 along an etching path associated with the secondnano material layer 22 in an arc jet type current generation system. Subsequently, the firstnano material layer 12 is etched by anozzle 27 along an etching path associated with the firstnano material layer 12 in the same arc jet type current generation system. Moreover, thenozzles substrate 11 as illustrated inFIG. 5B may be arranged in different directions. For example, the firstnano material layer 12 is electrically conductive in a first direction (such as the X direction) and is not electrically conductive in a second direction (such as the Y direction). Further, the secondnano material layer 22 is not electrically conductive in the first direction (the X direction) and is electrically conductive in the second direction (the Y direction). - Referring to
FIG. 5B , a nanoscaleconductive film 50 is achieved after thenano base film 28 is etched. The firstnano material layer 12 of the nanoscaleconductive film 50 includesfirst regions 121 andsecond regions 122, in which thefirst regions 121 are electrically isolated from each other by thesecond regions 122. Also, the secondnano material layer 22 of the nanoscaleconductive film 50 includesfirst regions 221 andsecond regions 222, in which thefirst regions 221 are electrically isolated from each other by thesecond regions 222. -
FIGS. 6A and 6B are enlarged photo diagrams of a nanoscale conductive film before etching. Specifically,FIG. 6A is a photo image of an SNW conductive film taken by a scanning electron microscope (SEM), whileFIG. 6B is a photo image of the SNW conductive film taken by a three-dimensional (3D) laser microscope. Referring to bothFIGS. 6A and 6B , silver nanowires in the SNW conductive film extend arbitrarily and interweave randomly in a high electrically conductive network. In addition, with the silver nanowires of a relatively high aspect ratio sparsely distributed in the network, the SNW conductive film exhibits excellent optical transparency, and has a relatively high electrical conductivity as well as high optical transmittance. -
FIGS. 7A and 7B are enlarged photo diagrams of a nanoscale conductive film prepared according to some embodiments and a nanoscale conductive film prepared by an existing approach, respectively. Referring toFIG. 7A , in the SNW conductive film prepared according to some embodiments, the silver nanowires after etching are simply broken apart and not completely removed. As a result, the electrical conductivity of the SNW conductive film has been damaged, but the optical characteristics thereof are maintained. Referring toFIG. 7B , on the contrary, in the nanoscale conductive film prepared by the existing approach, the silver nanowires after etching have been substantially completely removed. Consequently, even though the electrical conductivity of such nanoscale conductive film is lost, the optical characteristics thereof are damaged as well and thus are quite different from those before etching. -
FIGS. 7C and 7D are further enlarged photo diagrams of the nanoscale conductive films shown inFIGS. 7A and 7B , respectively.FIGS. 7C and 7D show the striking differences between the nanoscale conductive film prepared according to some embodiments and that prepared by an existing approach. -
FIG. 8A is an enlarged photo diagram of a nanoscale conductive film prepared according to some embodiments. Referring toFIG. 8A , it can be found that broken points at the silver nanowires of the SNW conductive film seem to have been melted. Such a phenomenon is caused by the high voltage of the current generation system and the accompanying heat generated thereby. As previously discussed, since current-based etching in an atmospheric environment has a limited effect, the etching only breaks the silver nanowires without completely destroying the structure of an SNW. As a result, the methods according to the embodiments are able to achieve the desirable etching effect so as to define the electrical characteristics of a nanoscale conductive film while maintaining its optical characteristics. -
FIG. 8B is a diagram showing the haze, before and after etching, of a nanoscale conductive film prepared according to some embodiments. Referring toFIG. 8B , the solid line indicates that the haze before etching (for example, at time T0) of an SNW conductive film prepared according to at least one of the embodiments described is approximately 0.8%, and the haze after etching (for example, at time T1) is also approximately 0.8%. Accordingly, there is no substantial change in the haze before and after etching. In some embodiments, in the nano material layer of the SNW conductive film, the difference of haze between the first regions not having been etched and the second regions having been etched is not greater than 0.3%, and preferably not greater than 0.1%. - In contrast, the dotted line indicates that the haze before etching (for example, at time T0) of an SNW conductive film prepared by an existing approach is approximately 0.8%, and the haze after etching (for example, at time T1) is also approximately 0.4%. Accordingly, the difference of haze is greater than 0.3%, which means a significant change.
- In some embodiments, haze in a general definition refers to the measure of scattering calculated by the ratio in percentages between the flux of diffused light deflecting off the incident direction when transmits through a sample and the flux of transmitted light. To calculate haze ratio, the flux of diffused light that deflects off an incident direction by 2.5 degrees or above is taken into consideration.
-
FIGS. 9A and 9B are schematic diagrams showing optical performance of a nanoscale conductive film prepared by an existing approach. Referring to bothFIGS. 9A and 9B , in the nanoscale conductive film prepared by the existing approach, the optical characteristics of first regions (conductive regions) 321 not having been etched and those of second regions (non-conductive regions) 322 having been etched are significantly different because nanowires in the second regions have been substantially removed during the etching process and thus the second regions exhibit significant color difference. In addition, the overcoat of the nanoscale conductive film may also be damaged by the etching, which further degrades the optical characteristics of the nanoscale conductive film. -
FIGS. 10A and 10B are schematic diagrams of a nanoscale conductive film prepared according to some embodiments. Referring toFIGS. 10A and 10B , in the nanoscale conductive film prepared according to some embodiments, the optical characteristics of first regions (conductive regions) 421 not having been etched and those of second regions (non-conductive regions) 422 having been etched are not significantly different from each other because only nanowires in thesecond regions 422 are broken off and the structure of thesecond regions 422 is not adversely affected. Moreover, the overcoat of the nanoscale conductive film is obviously not damaged by the etching and thus the optical characteristics of the nanoscale conductive film are largely maintained. -
FIG. 11 is a schematic cross-sectional view of a touch-panel display device 110, in accordance with various embodiments. Referring toFIG. 11 , the touch-panel display device 110 includes atouch panel 60 and adisplay module 66. Moreover, thetouch panel 60 includes atransparent substrate 71, a firstsensing electrode layer 91 and amasking layer 75. Thetransparent substrate 71 has afirst surface 711 and asecond surface 712 on opposite sides of thetransparent substrate 71, respectively. The firstsensing electrode layer 91 is disposed on thefirst surface 711 of thetransparent substrate 71. Themasking layer 75 is also disposed on thefirst surface 711 of thetransparent substrate 71 and surrounds the firstsensing electrode layer 91. - In some embodiments, the
transparent substrate 71 includes an optically transmissive material selected from glass, polymethyl methacrylate (PMMA), polyether sulfone (PES), polyacrylate, polyphenyl sulfide, poly allyl, polycarbonate, polyvinyl chloride (PVC), polypropylene (PP), polyethylene terephthalate (PET), polyethylene naphthalate (PEN), polycarbonate (PC) and polystyrene (PS). Moreover, themasking layer 75 includes an optically opaque material selected from black photo resist, black resin or black ink. - In some embodiments, the first
sensing electrode layer 91 includes a nanoscaleconductive film 20 as illustrated inFIG. 2D or a nanoscaleconductive film 40 as illustrated inFIG. 4B . Moreover, the firstsensing electrode layer 91 has an electrode pattern in which electrodes, for example, first electrodes and second electrodes, extend in a same direction and interleave with each other. In addition, thetouch panel 60 and thedisplay module 66 are attached to each other by a firstadhesive layer 81. The firstadhesive layer 81 includes optical clear resin (OCR) or optical clear adhesive (OCA). Further, the optical clear resin may include glue or optically transmissive, double-sided adhesive tape. Thedisplay module 66 includes a back-lit display such as a liquid crystal display (LCD), or a self-luminous display such as an organic light emitting diode (OLED) display. -
FIG. 12 is a schematic cross-sectional view of a touch-panel display device 120, in accordance with various embodiments. Referring toFIG. 12 , the touch-panel display device 120 includes atouch panel 70 that further includes afirst carrier 72 between thetransparent substrate 71 and thedisplay module 66. The firstsensing electrode layer 91, disposed on a surface of thefirst carrier 72, is attached to thetransparent substrate 71 by the firstadhesive layer 81. Moreover, the opposite surface of thefirst carrier 72 is attached to thedisplay module 66 by a secondadhesive layer 82. In some embodiments, thefirst carrier 72 includes an optically transmissive material selected from glass, polymethyl methacrylate (PMMA), polyether sulfone (PES), polyacrylate, polyphenyl sulfide, poly allyl, polycarbonate, polyvinyl chloride (PVC), polypropylene (PP), polyethylene terephthalate (PET), polyethylene naphthalate (PEN), polycarbonate (PC) and polystyrene (PS). Moreover, the secondadhesive layer 82 includes optical clear resin (OCR) or optical clear adhesive (OCA). -
FIG. 13 is a schematic cross-sectional view of a touch-panel display device 130, in accordance with various embodiments. Referring toFIG. 13 , the touch-panel display device 130 includes atouch panel 80, in which a firstsensing electrode layer 91 is disposed on a surface of thefirst carrier 72 and attached to thetransparent substrate 71 by a firstadhesive layer 81, and a secondsensing electrode layer 92 is disposed on the opposite surface of thefirst carrier 72 and attached to thedisplay module 66 by a secondadhesive layer 82. In some embodiments, the secondsensing electrode layer 92 includes a nanoscaleconductive film 20 as illustrated inFIG. 2D or a nanoscaleconductive film 40 as illustrated inFIG. 4B . Moreover, the firstsensing electrode layer 91 includes first electrodes arranged in a first direction and second electrodes arranged in a second direction, which is substantially orthogonal to the first direction. Alternatively, the first andsecond sensing electrodes FIGS. 3A and 3B ,FIGS. 3C and 3D , orFIGS. 5A and 5B , and arranged in different directions. -
FIG. 14 is a schematic cross-sectional view of a touch-panel display device 140, in accordance with various embodiments. Referring toFIG. 14 , the touch-panel display device 140 includes atouch panel 90, in which a firstsensing electrode layer 91 is disposed on a surface of thetransparent substrate 71, and a secondsensing electrode layer 92 is disposed on a surface of thefirst carrier 72. Moreover, the firstsensing electrode layer 91 and the secondsensing electrode layer 92 are attached to each other by a firstadhesive layer 81. Furthermore, the opposite surface of thefirst carrier 72 is attached to thedisplay module 66 by a secondadhesive layer 82. -
FIG. 15 is a schematic cross-sectional view of a touch-panel display device 150, in accordance with various embodiments. Referring toFIG. 15 , the touch-panel display device 150 includes atouch panel 100 that further includes afirst carrier 72 between atransparent substrate 71 and adisplay module 66, and asecond carrier 73 between thefirst carrier 72 and thedisplay module 66. A firstsensing electrode layer 91 is disposed on a surface of thefirst carrier 72, and a secondsensing electrode layer 92 is disposed on a surface of thesecond carrier 73. Moreover, the opposite surface of thefirst carrier 72 is attached to thetransparent substrate 71 by a firstadhesive layer 81. The firstsensing electrode layer 91 and the secondsensing electrode layer 92 are attached to each other by a secondadhesive layer 82. Furthermore, the opposite surface of thesecond carrier 73 is attached to thedisplay module 66 by a third adhesive layer 83. In some embodiments, thesecond carrier 73 includes an optically transmissive material selected from glass, polymethyl methacrylate (PMMA), polyether sulfone (PES), polyacrylate, polyphenyl sulfide, poly allyl, polycarbonate, polyvinyl chloride (PVC), polypropylene (PP), polyethylene terephthalate (PET), polyethylene naphthalate (PEN), polycarbonate (PC) and polystyrene (PS). Moreover, the third adhesive layer 83 includes optical clear resin (OCR) or optical clear adhesive (OCA). - The methods of forming nanoscale conductive films in accordance with the embodiments of the disclosure can effectively achieve a desired etching effect in order to define the electrical characteristics of the nanoscale conductive films so that conductive regions are electrically isolated from each other by non-conductive regions in the nanoscale conductive films. Moreover, the methods can effectively reduce damage on an overcoat of a nanoscale conductive film caused during an etching process and maintain the optical characteristics of the nanoscale conductive film. Furthermore, compared to some existing approaches of forming nanoscale conductive films, the methods can significantly reduce manufacturing time. In addition, the etching process for the nanoscale conductive films prepared by the methods is conducted in a current generation system. As a result, conductive regions and non-conductive regions, either before or after etching, exhibit no obvious difference in optical performance. For example, the haze difference is not greater than 0.3% or even 0.1%, which makes it possible to hide the wiring in a touch-panel display device and thus adds an aesthetic touch to the appearance of the touch-panel display device.
- Although the disclosure and its advantages have been described in detail, it should be understood that various changes, substitutions and alterations can be made herein without departing from the spirit and scope of the disclosure as defined by the appended claims.
- The scope of the present disclosure is not intended to be limited to the particular embodiments of the process, machine, methods and steps described in the specification. As persons having ordinary skill in the art will readily appreciate from the disclosure, processes, machines, methods or steps, presently existing or later to be developed, that perform substantially the same function or achieve substantially the same result as the corresponding embodiments described herein may be utilized. Accordingly, the appended claims are intended to include within their scope such processes, machines, methods or steps.
Claims (9)
1. A touch-panel display device, comprising:
a transparent substrate including a first surface and a second surface on opposite sides of the transparent substrate, respectively;
a display module at the first surface side of the transparent substrate; and
a first sensing electrode layer, disposed between the transparent substrate and the display module, including a first nanostructure layer having first regions and second regions, the first regions being electrically isolated from each other by the second regions, and a haze difference between the first regions and the second regions is not greater than 0.1%.
2. The touch-panel display device of claim 1 , wherein the first sensing electrode layer is disposed on the first surface of the transparent substrate, and includes first electrodes and second electrodes interleaved with each other in the first regions.
3. The touch-panel display device of claim 1 further comprising a first carrier configured to support the first sensing electrode layer between the transparent substrate and the display module, and comprising first electrodes and second electrodes interleaved with each other in the first regions.
4. The touch-panel display device of claim 1 further comprising a first carrier and a second sensing electrode layer, the first carrier disposed between the transparent substrate and the display module, wherein the first sensing electrode layer is disposed on a first surface of the first carrier and the second sensing electrode layer is disposed on a second surface of the first carrier, the first surface and second surface on opposite sides of the first carrier.
5. The touch-panel display device of claim 4 , wherein the second sensing electrode layer includes a second nanostructure layer having first regions and second regions, the first regions being electrically isolated from each other by the second regions, and a haze difference between the first regions and the second regions in the second nanostructure layer is not greater than 0.1%.
6. The touch-panel display device of claim 4 , wherein the first sensing electrode layer includes in the first regions thereof first electrodes arranged in a first direction, and the second sensing electrode layer includes in the first regions thereof second electrodes arranged in a second direction.
7. The touch-panel display device of claim 1 further comprising a first carrier and a second sensing electrode layer, the first carrier disposed between the transparent substrate and the display module, wherein the first sensing electrode layer is disposed on a first surface of the first carrier and the second sensing electrode layer is disposed, between the first sensing electrode layer and the first carrier, on the first carrier.
8. The touch-panel display device of claim 7 , wherein the second sensing electrode layer includes a second nanostructure layer having first regions and second regions, the first regions being electrically isolated from each other by the second regions, and a haze difference between the first regions and the second regions in the second nanostructure layer is not greater than 0.1%.
9. The touch-panel display device of claim 7 , wherein the first sensing electrode layer includes in the first regions thereof first electrodes arranged in a first direction, and the second sensing electrode layer includes in the first regions thereof second electrodes arranged in a second direction.
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CN201410624691.2A CN105573542B (en) | 2014-11-07 | 2014-11-07 | Make the method and its touch control display apparatus of nano-level conducting film |
US14/934,174 US10037095B2 (en) | 2014-11-07 | 2015-11-06 | Methods of forming nanostructure conductive films and touch devices including the nanostructure conductive films |
US16/020,990 US20180307341A1 (en) | 2014-11-07 | 2018-06-27 | Touch devices including nanoscale conductive films |
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CN108363521A (en) * | 2018-02-08 | 2018-08-03 | 业成科技(成都)有限公司 | Touch control display apparatus and touch panel |
CN109445007B (en) * | 2019-01-02 | 2021-04-23 | 京东方科技集团股份有限公司 | Optical film, display screen assembly and display device |
CN110246607B (en) * | 2019-04-30 | 2020-04-07 | 山东大学 | Flexible transparent conductive film with high light transmittance and high bonding strength as well as preparation method and application thereof |
CN110333793B (en) * | 2019-05-09 | 2022-12-09 | 业成科技(成都)有限公司 | Flexible touch control structure |
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