JP2009513030A - 界面層を有する樹脂パッケージ半導体装置 - Google Patents

界面層を有する樹脂パッケージ半導体装置 Download PDF

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Publication number
JP2009513030A
JP2009513030A JP2008537793A JP2008537793A JP2009513030A JP 2009513030 A JP2009513030 A JP 2009513030A JP 2008537793 A JP2008537793 A JP 2008537793A JP 2008537793 A JP2008537793 A JP 2008537793A JP 2009513030 A JP2009513030 A JP 2009513030A
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JP
Japan
Prior art keywords
chip
buffer layer
dielectric constant
loss tangent
semiconductor device
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Pending
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JP2008537793A
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English (en)
Japanese (ja)
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JP2009513030A5 (https=
Inventor
ダブリュ． コンディー、ブライアン
ケイ． シャー、マヘーシュ
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NXP USA Inc
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NXP USA Inc
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Publication date
Application filed by NXP USA Inc filed Critical NXP USA Inc
Publication of JP2009513030A publication Critical patent/JP2009513030A/ja
Publication of JP2009513030A5 publication Critical patent/JP2009513030A5/ja
Pending legal-status Critical Current

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W74/00—Encapsulations, e.g. protective coatings
    • H10W74/10—Encapsulations, e.g. protective coatings characterised by their shape or disposition
    • H10W74/131—Encapsulations, e.g. protective coatings characterised by their shape or disposition the semiconductor body being only partially enclosed
    • H10W74/147—Encapsulations, e.g. protective coatings characterised by their shape or disposition the semiconductor body being only partially enclosed the encapsulations being multilayered
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/01—Manufacture or treatment
    • H10W72/0198—Manufacture or treatment batch processes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W74/00—Encapsulations, e.g. protective coatings
    • H10W74/10—Encapsulations, e.g. protective coatings characterised by their shape or disposition
    • H10W74/131—Encapsulations, e.g. protective coatings characterised by their shape or disposition the semiconductor body being only partially enclosed
    • H10W74/137—Encapsulations, e.g. protective coatings characterised by their shape or disposition the semiconductor body being only partially enclosed the encapsulations being directly on the semiconductor body
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W74/00—Encapsulations, e.g. protective coatings
    • H10W74/10—Encapsulations, e.g. protective coatings characterised by their shape or disposition
    • H10W74/131—Encapsulations, e.g. protective coatings characterised by their shape or disposition the semiconductor body being only partially enclosed
    • H10W74/144—Encapsulations, e.g. protective coatings characterised by their shape or disposition the semiconductor body being only partially enclosed the encapsulations comprising foils
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W40/00—Arrangements for thermal protection or thermal control
    • H10W40/70—Fillings or auxiliary members in containers or in encapsulations for thermal protection or control
    • H10W40/77—Auxiliary members characterised by their shape
    • H10W40/778—Auxiliary members characterised by their shape in encapsulations

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  • Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)
  • Encapsulation Of And Coatings For Semiconductor Or Solid State Devices (AREA)
JP2008537793A 2005-10-24 2006-10-18 界面層を有する樹脂パッケージ半導体装置 Pending JP2009513030A (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US11/257,822 US7432133B2 (en) 2005-10-24 2005-10-24 Plastic packaged device with die interface layer
PCT/US2006/040871 WO2007050422A2 (en) 2005-10-24 2006-10-18 Plastic packaged device with die interface layer

Publications (2)

Publication Number Publication Date
JP2009513030A true JP2009513030A (ja) 2009-03-26
JP2009513030A5 JP2009513030A5 (https=) 2009-12-03

Family

ID=37968398

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2008537793A Pending JP2009513030A (ja) 2005-10-24 2006-10-18 界面層を有する樹脂パッケージ半導体装置

Country Status (5)

Country Link
US (1) US7432133B2 (https=)
JP (1) JP2009513030A (https=)
CN (1) CN101517718B (https=)
TW (1) TWI470747B (https=)
WO (1) WO2007050422A2 (https=)

Families Citing this family (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2006052765A2 (en) 2004-11-04 2006-05-18 Smith & Nephew, Inc. Cycle and load measurement device
CN103637840A (zh) * 2005-08-23 2014-03-19 史密夫和内修有限公司 遥测矫形植入物
JP4773307B2 (ja) * 2006-09-15 2011-09-14 Ｏｋｉセミコンダクタ株式会社 半導体装置の製造方法
WO2008103181A1 (en) 2007-02-23 2008-08-28 Smith & Nephew, Inc. Processing sensed accelerometer data for determination of bone healing
AU2008296209B2 (en) * 2007-09-06 2014-05-29 Smith & Nephew, Inc. System and method for communicating with a telemetric implant
US20110004076A1 (en) * 2008-02-01 2011-01-06 Smith & Nephew, Inc. System and method for communicating with an implant
US8704124B2 (en) 2009-01-29 2014-04-22 Smith & Nephew, Inc. Low temperature encapsulate welding
US8866708B2 (en) 2011-01-21 2014-10-21 Peter Sui Lun Fong Light emitting diode switch device and array
US9190393B1 (en) 2013-09-10 2015-11-17 Delta Electronics, Inc. Low parasitic capacitance semiconductor device package
US10224260B2 (en) 2013-11-26 2019-03-05 Infineon Technologies Ag Semiconductor package with air gap
JP2015231027A (ja) * 2014-06-06 2015-12-21 住友電気工業株式会社 半導体装置
US10672703B2 (en) 2018-09-26 2020-06-02 Nxp Usa, Inc. Transistor with shield structure, packaged device, and method of fabrication
CN109273418A (zh) * 2018-11-08 2019-01-25 中国科学院苏州纳米技术与纳米仿生研究所南昌研究院 一种芯片封装结构及方法
US11248769B2 (en) 2019-04-10 2022-02-15 Peter Sui Lun Fong Optic for touch-sensitive light emitting diode switch
US11728305B2 (en) 2021-05-11 2023-08-15 Sandisk Technologies Llc Capacitor structure including bonding pads as electrodes and methods of forming the same
CN114678298B (zh) * 2022-03-14 2022-09-09 珠海市众知科技有限公司 一种集成电路块引脚封装装置

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0794642A (ja) * 1993-07-27 1995-04-07 Toshiba Corp 半導体装置
JPH1065067A (ja) * 1996-08-22 1998-03-06 Toshiba Corp 半導体装置及びその製造方法

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JP2906282B2 (ja) * 1990-09-20 1999-06-14 富士通株式会社 ガラスセラミック・グリーンシートと多層基板、及び、その製造方法
JPH04314394A (ja) * 1991-04-12 1992-11-05 Fujitsu Ltd ガラスセラミック回路基板とその製造方法
US5598034A (en) * 1992-07-22 1997-01-28 Vlsi Packaging Corporation Plastic packaging of microelectronic circuit devices
KR100280762B1 (ko) * 1992-11-03 2001-03-02 비센트 비.인그라시아 노출 후부를 갖는 열적 강화된 반도체 장치 및 그 제조방법
US5578860A (en) * 1995-05-01 1996-11-26 Motorola, Inc. Monolithic high frequency integrated circuit structure having a grounded source configuration
JP3516592B2 (ja) * 1998-08-18 2004-04-05 沖電気工業株式会社 半導体装置およびその製造方法
US6001673A (en) * 1999-02-11 1999-12-14 Ericsson Inc. Methods for packaging integrated circuit devices including cavities adjacent active regions
KR100298827B1 (ko) * 1999-07-09 2001-11-01 윤종용 재배선 기판을 사용한 웨이퍼 레벨 칩 스케일 패키지 제조방법
US6509415B1 (en) * 2000-04-07 2003-01-21 Honeywell International Inc. Low dielectric constant organic dielectrics based on cage-like structures
US6627669B2 (en) * 2000-06-06 2003-09-30 Honeywell International Inc. Low dielectric materials and methods of producing same
US6423811B1 (en) * 2000-07-19 2002-07-23 Honeywell International Inc. Low dielectric constant materials with polymeric networks
EP1215724B1 (en) * 2000-11-20 2012-10-31 Texas Instruments Incorporated Wire bonded semiconductor device with low capacitance coupling
US6744117B2 (en) * 2002-02-28 2004-06-01 Motorola, Inc. High frequency semiconductor device and method of manufacture

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0794642A (ja) * 1993-07-27 1995-04-07 Toshiba Corp 半導体装置
JPH1065067A (ja) * 1996-08-22 1998-03-06 Toshiba Corp 半導体装置及びその製造方法

Also Published As

Publication number Publication date
WO2007050422A3 (en) 2009-05-14
CN101517718A (zh) 2009-08-26
US20070090543A1 (en) 2007-04-26
TW200731476A (en) 2007-08-16
WO2007050422A2 (en) 2007-05-03
CN101517718B (zh) 2011-01-26
TWI470747B (zh) 2015-01-21
US7432133B2 (en) 2008-10-07

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