JP2009513026A - 半導体構造及び組み立て方法 - Google Patents

半導体構造及び組み立て方法 Download PDF

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Publication number
JP2009513026A
JP2009513026A JP2008537739A JP2008537739A JP2009513026A JP 2009513026 A JP2009513026 A JP 2009513026A JP 2008537739 A JP2008537739 A JP 2008537739A JP 2008537739 A JP2008537739 A JP 2008537739A JP 2009513026 A JP2009513026 A JP 2009513026A
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solder
semiconductor
metal element
substrate
flange
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JP2009513026A5 (enExample
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ダブリュ． コンディー、ブライアン
ビスワナサン、ラクシュミナラヤン
ダブリュ． ウェッツ、リチャード
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NXP USA Inc
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NXP USA Inc
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  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)
  • Wire Bonding (AREA)
JP2008537739A 2005-10-24 2006-10-10 半導体構造及び組み立て方法 Pending JP2009513026A (ja)

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US11/257,784 US7446411B2 (en) 2005-10-24 2005-10-24 Semiconductor structure and method of assembly
PCT/US2006/039649 WO2007050287A2 (en) 2005-10-24 2006-10-10 Semiconductor structure and method of assembly

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Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2014502059A (ja) * 2011-01-05 2014-01-23 ローベルト ボツシユ ゲゼルシヤフト ミツト ベシユレンクテル ハフツング サーマルマネージメントを向上させた電子アセンブリ
WO2018092251A1 (ja) * 2016-11-17 2018-05-24 三菱電機株式会社 半導体パッケージ
KR20200067175A (ko) * 2017-10-09 2020-06-11 크리, 인코포레이티드 반도체 패키지를 위한 리벳없는 리드 체결
JPWO2020230457A1 (enExample) * 2019-05-16 2020-11-19
WO2020261730A1 (ja) * 2019-06-25 2020-12-30 Ｎｇｋエレクトロデバイス株式会社 パッケージ、および、パワー半導体モジュールの製造方法

Families Citing this family (38)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7874846B2 (en) * 2007-06-22 2011-01-25 Seagate Technology Llc Hermetically sealed liquid crystal polymer interconnect
US8659359B2 (en) 2010-04-22 2014-02-25 Freescale Semiconductor, Inc. RF power transistor circuit
CN101859751B (zh) * 2010-05-20 2012-04-18 中国电子科技集团公司第四十三研究所 一种陶瓷复合基板
EP2717309B1 (en) * 2011-05-31 2019-01-09 Kyocera Corporation Element housing package, component for semiconductor device, and semiconductor device
JP5602095B2 (ja) * 2011-06-09 2014-10-08 三菱電機株式会社 半導体装置
US8907467B2 (en) 2012-03-28 2014-12-09 Infineon Technologies Ag PCB based RF-power package window frame
CN102623416B (zh) 2012-04-24 2015-09-02 苏州远创达科技有限公司 一种射频功放模块的功率器件无封装结构及其组装方法
US9941242B2 (en) 2012-04-24 2018-04-10 Innogration (Suzhou) Co., Ltd. Unpacked structure for power device of radio frequency power amplification module and assembly method therefor
US9312817B2 (en) 2012-07-20 2016-04-12 Freescale Semiconductor, Inc. Semiconductor package design providing reduced electromagnetic coupling between circuit components
US9281283B2 (en) * 2012-09-12 2016-03-08 Freescale Semiconductor, Inc. Semiconductor devices with impedance matching-circuits
CN102956605B (zh) * 2012-11-19 2016-03-23 苏州远创达科技有限公司 一种半导体部件及其制作方法
EP2797111A1 (en) * 2013-04-24 2014-10-29 Nxp B.V. Electrical component packaging
US9240390B2 (en) 2013-06-27 2016-01-19 Freescale Semiconductor, Inc. Semiconductor packages having wire bond wall to reduce coupling
US9401342B2 (en) 2013-06-27 2016-07-26 Freescale Semiconductor, Inc. Semiconductor package having wire bond wall to reduce coupling
JP6375584B2 (ja) * 2014-03-31 2018-08-22 住友電工デバイス・イノベーション株式会社 電子部品搭載用パッケージ
US10199313B2 (en) 2014-06-02 2019-02-05 Qorvo Us, Inc. Ring-frame power package
US10008473B2 (en) 2014-06-02 2018-06-26 Qorvo Us, Inc. Power package lid
US9666498B2 (en) 2014-06-02 2017-05-30 Qorvo Us, Inc. Ring-frame power package
US9438184B2 (en) 2014-06-27 2016-09-06 Freescale Semiconductor, Inc. Integrated passive device assemblies for RF amplifiers, and methods of manufacture thereof
US9721902B2 (en) 2014-08-26 2017-08-01 Samsung Electronics Co., Ltd. Method of manufacturing RF power amplifier module, RF power amplifier module, RF module, and base station
CN104218018B (zh) * 2014-08-26 2017-08-29 深圳三星通信技术研究有限公司 一种射频功放模块及其组装方法、射频模块、基站
JP6451257B2 (ja) * 2014-11-21 2019-01-16 富士電機株式会社 半導体装置
US10432152B2 (en) 2015-05-22 2019-10-01 Nxp Usa, Inc. RF amplifier output circuit device with integrated current path, and methods of manufacture thereof
EP3311636A1 (en) * 2015-06-22 2018-04-25 Telefonaktiebolaget LM Ericsson (publ) Slide and mount manufacturing for coinless rf power amplifier
EP3183947B1 (en) * 2015-06-22 2020-12-16 Telefonaktiebolaget LM Ericsson (publ) Low-cost superior performance coinless rf power amplifier
US9629246B2 (en) 2015-07-28 2017-04-18 Infineon Technologies Ag PCB based semiconductor package having integrated electrical functionality
US9692363B2 (en) 2015-10-21 2017-06-27 Nxp Usa, Inc. RF power transistors with video bandwidth circuits, and methods of manufacture thereof
US9571044B1 (en) 2015-10-21 2017-02-14 Nxp Usa, Inc. RF power transistors with impedance matching circuits, and methods of manufacture thereof
US10225922B2 (en) 2016-02-18 2019-03-05 Cree, Inc. PCB based semiconductor package with impedance matching network elements integrated therein
US9653410B1 (en) * 2016-03-15 2017-05-16 Nxp Usa, Inc. Transistor with shield structure, packaged device, and method of manufacture
WO2017201260A1 (en) * 2016-05-20 2017-11-23 Materion Corporation Copper flanged air cavity packages for high frequency devices
US10304772B2 (en) * 2017-05-19 2019-05-28 Taiwan Semiconductor Manufacturing Co., Ltd. Semiconductor device structure with resistive element
US10199303B1 (en) * 2017-08-07 2019-02-05 Nxp Usa, Inc. Molded air cavity packages and methods for the production thereof
CN107833838B (zh) * 2017-11-22 2019-10-18 华进半导体封装先导技术研发中心有限公司 一种气密性器件的高可靠性封装结构及其制造方法
JP7318238B2 (ja) * 2019-03-11 2023-08-01 富士電機株式会社 半導体装置
US10872837B2 (en) * 2019-05-08 2020-12-22 Qorvo Us, Inc. Air-cavity semiconductor package with low cost high thermal carrier
DE102019128779B4 (de) * 2019-10-24 2021-05-12 Infineon Technologies Ag Hochfrequenz-Vorrichtung mit Hochfrequenz-Signalführungselement und zugehöriges Herstellungsverfahren
FR3163207A1 (fr) * 2024-06-10 2025-12-12 Centre National d'Études Spatiales Dispositif d’encapsulation et son procédé de fabrication

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2003282751A (ja) * 2002-03-20 2003-10-03 Sumitomo Metal Electronics Devices Inc 高周波用パッケージならびに高周波用パワーモジュール基板及びその製造方法
JP2004165181A (ja) * 2002-06-26 2004-06-10 Kyocera Corp 半導体素子収納用パッケージおよび半導体装置

Family Cites Families (23)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3381080A (en) * 1962-07-02 1968-04-30 Westinghouse Electric Corp Hermetically sealed semiconductor device
JPS4810904B1 (enExample) * 1969-03-12 1973-04-09
US3626259A (en) * 1970-07-15 1971-12-07 Trw Inc High-frequency semiconductor package
US4784974A (en) * 1982-08-05 1988-11-15 Olin Corporation Method of making a hermetically sealed semiconductor casing
US4524238A (en) * 1982-12-29 1985-06-18 Olin Corporation Semiconductor packages
US4796083A (en) * 1987-07-02 1989-01-03 Olin Corporation Semiconductor casing
JP2527828B2 (ja) * 1990-02-27 1996-08-28 三菱電機株式会社 半導体パッケ―ジ
US5122858A (en) * 1990-09-10 1992-06-16 Olin Corporation Lead frame having polymer coated surface portions
US5773879A (en) * 1992-02-13 1998-06-30 Mitsubishi Denki Kabushiki Kaisha Cu/Mo/Cu clad mounting for high frequency devices
US5309014A (en) 1992-04-02 1994-05-03 Motorola Inc. Transistor package
US5736783A (en) * 1993-10-08 1998-04-07 Stratedge Corporation. High frequency microelectronics package
US5902959A (en) * 1996-09-05 1999-05-11 International Rectifier Corporation Lead frame with waffled front and rear surfaces
US6020636A (en) 1997-10-24 2000-02-01 Eni Technologies, Inc. Kilowatt power transistor
US6072211A (en) * 1998-08-03 2000-06-06 Motorola, Inc. Semiconductor package
US6261868B1 (en) * 1999-04-02 2001-07-17 Motorola, Inc. Semiconductor component and method for manufacturing the semiconductor component
US6072238A (en) * 1999-04-07 2000-06-06 Motorola, Inc. Semiconductor component
US6462413B1 (en) 1999-07-22 2002-10-08 Polese Company, Inc. LDMOS transistor heatsink package assembly and manufacturing method
US6511866B1 (en) * 2001-07-12 2003-01-28 Rjr Polymers, Inc. Use of diverse materials in air-cavity packaging of electronic devices
JP2003068919A (ja) 2001-08-27 2003-03-07 Nec Yamagata Ltd 半導体装置
US7091602B2 (en) * 2002-12-13 2006-08-15 Freescale Semiconductor, Inc. Miniature moldlocks for heatsink or flag for an overmolded plastic package
SG157957A1 (en) * 2003-01-29 2010-01-29 Interplex Qlp Inc Package for integrated circuit die
TW200423304A (en) * 2003-04-16 2004-11-01 Hong-Ren Wang Twice semi-etching processing and packaging structure for single-layer lead frame of image sensor
TWI242862B (en) * 2003-08-21 2005-11-01 Siliconware Precision Industries Co Ltd Semiconductor package with heat sink

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2003282751A (ja) * 2002-03-20 2003-10-03 Sumitomo Metal Electronics Devices Inc 高周波用パッケージならびに高周波用パワーモジュール基板及びその製造方法
JP2004165181A (ja) * 2002-06-26 2004-06-10 Kyocera Corp 半導体素子収納用パッケージおよび半導体装置

Cited By (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2014502059A (ja) * 2011-01-05 2014-01-23 ローベルト ボツシユ ゲゼルシヤフト ミツト ベシユレンクテル ハフツング サーマルマネージメントを向上させた電子アセンブリ
US8933546B2 (en) 2011-01-05 2015-01-13 Robert Bosch Gmbh Electronic assembly with improved thermal management
WO2018092251A1 (ja) * 2016-11-17 2018-05-24 三菱電機株式会社 半導体パッケージ
JPWO2018092251A1 (ja) * 2016-11-17 2019-03-14 三菱電機株式会社 半導体パッケージ
KR102402351B1 (ko) * 2017-10-09 2022-05-30 울프스피드, 인크. 반도체 패키지를 위한 리벳없는 리드 체결
KR20200067175A (ko) * 2017-10-09 2020-06-11 크리, 인코포레이티드 반도체 패키지를 위한 리벳없는 리드 체결
JPWO2020230457A1 (enExample) * 2019-05-16 2020-11-19
WO2020230457A1 (ja) * 2019-05-16 2020-11-19 Ｎｇｋエレクトロデバイス株式会社 パワー半導体モジュールおよびその製造方法
JP7159464B2 (ja) 2019-05-16 2022-10-24 Ｎｇｋエレクトロデバイス株式会社 パワー半導体モジュールおよびその製造方法
WO2020261730A1 (ja) * 2019-06-25 2020-12-30 Ｎｇｋエレクトロデバイス株式会社 パッケージ、および、パワー半導体モジュールの製造方法
JPWO2020261730A1 (enExample) * 2019-06-25 2020-12-30
JP7290723B2 (ja) 2019-06-25 2023-06-13 Ｎｇｋエレクトロデバイス株式会社 パッケージ、および、パワー半導体モジュールの製造方法
US11901268B2 (en) 2019-06-25 2024-02-13 NGK Electronics Devices, Inc. Package with an electrode-attached frame supported by a heat sink, and method for manufacturing power semiconductor module provided therewith

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TW200721421A (en) 2007-06-01
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TWI489602B (zh) 2015-06-21
WO2007050287A3 (en) 2009-04-30

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