JP2009508336A5 - - Google Patents

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Publication number
JP2009508336A5
JP2009508336A5 JP2008530223A JP2008530223A JP2009508336A5 JP 2009508336 A5 JP2009508336 A5 JP 2009508336A5 JP 2008530223 A JP2008530223 A JP 2008530223A JP 2008530223 A JP2008530223 A JP 2008530223A JP 2009508336 A5 JP2009508336 A5 JP 2009508336A5
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JP
Japan
Prior art keywords
semi
nitride semiconductors
substrate
polar
film
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JP2008530223A
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English (en)
Japanese (ja)
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JP2009508336A (ja
JP5270348B2 (ja
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Priority claimed from PCT/US2006/035012 external-priority patent/WO2007030709A2/en
Publication of JP2009508336A publication Critical patent/JP2009508336A/ja
Publication of JP2009508336A5 publication Critical patent/JP2009508336A5/ja
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JP2008530223A 2005-09-09 2006-09-08 有機金属化学気相成長法による半極性（Ａｌ，Ｉｎ，Ｇａ，Ｂ）Ｎの成長促進法 Active JP5270348B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US71549105P 2005-09-09 2005-09-09
US60/715,491 2005-09-09
PCT/US2006/035012 WO2007030709A2 (en) 2005-09-09 2006-09-08 METHOD FOR ENHANCING GROWTH OF SEMI-POLAR (Al, In,Ga,B)N VIA METALORGANIC CHEMICAL VAPOR DEPOSITION

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP2012158240A Division JP5645887B2 (ja) 2005-09-09 2012-07-17 半極性窒化物を備え、窒化物核生成層又はバッファ層に特徴を有するデバイス構造

Publications (3)

Publication Number Publication Date
JP2009508336A JP2009508336A (ja) 2009-02-26
JP2009508336A5 true JP2009508336A5 (cg-RX-API-DMAC7.html) 2009-10-08
JP5270348B2 JP5270348B2 (ja) 2013-08-21

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ID=37836513

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JP2008530223A Active JP5270348B2 (ja) 2005-09-09 2006-09-08 有機金属化学気相成長法による半極性（Ａｌ，Ｉｎ，Ｇａ，Ｂ）Ｎの成長促進法
JP2012158240A Active JP5645887B2 (ja) 2005-09-09 2012-07-17 半極性窒化物を備え、窒化物核生成層又はバッファ層に特徴を有するデバイス構造

Family Applications After (1)

Application Number Title Priority Date Filing Date
JP2012158240A Active JP5645887B2 (ja) 2005-09-09 2012-07-17 半極性窒化物を備え、窒化物核生成層又はバッファ層に特徴を有するデバイス構造

Country Status (6)

Country Link
US (1) US7575947B2 (cg-RX-API-DMAC7.html)
EP (1) EP1935014A4 (cg-RX-API-DMAC7.html)
JP (2) JP5270348B2 (cg-RX-API-DMAC7.html)
KR (1) KR101347848B1 (cg-RX-API-DMAC7.html)
TW (1) TWI404122B (cg-RX-API-DMAC7.html)
WO (1) WO2007030709A2 (cg-RX-API-DMAC7.html)

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US7858996B2 (en) 2006-02-17 2010-12-28 The Regents Of The University Of California Method for growth of semipolar (Al,In,Ga,B)N optoelectronic devices
KR101145755B1 (ko) * 2005-03-10 2012-05-16 재팬 사이언스 앤드 테크놀로지 에이젼시 평면의 반극성 갈륨 질화물의 성장을 위한 기술
KR101351396B1 (ko) 2005-06-01 2014-02-07 재팬 사이언스 앤드 테크놀로지 에이젼시 반극성 (Ｇａ,Ａｌ,Ｉｎ,Ｂ)Ｎ 박막들, 헤테로구조들, 및소자들의 성장 및 제조에 대한 기술
JP2010512660A (ja) * 2006-12-11 2010-04-22 ザ リージェンツ オブ ザ ユニバーシティ オブ カリフォルニア 無極性および半極性の発光デバイス
WO2008073385A1 (en) 2006-12-11 2008-06-19 The Regents Of The University Of California Metalorganic chemical vapor deposition (mocvd) growth of high performance non-polar iii-nitride optical devices
US8673074B2 (en) * 2008-07-16 2014-03-18 Ostendo Technologies, Inc. Growth of planar non-polar {1 -1 0 0} M-plane and semi-polar {1 1 -2 2} gallium nitride with hydride vapor phase epitaxy (HVPE)
KR100990645B1 (ko) 2008-12-15 2010-10-29 고려대학교 산학협력단 질화물 단결정의 제조 방법 및 이를 이용한 반도체 발광소자의 제조 방법
US8629065B2 (en) * 2009-11-06 2014-01-14 Ostendo Technologies, Inc. Growth of planar non-polar {10-10} M-plane gallium nitride with hydride vapor phase epitaxy (HVPE)
WO2011072014A1 (en) * 2009-12-08 2011-06-16 Lehigh Univeristy THERMOELECTRIC MATERIALS BASED ON SINGLE CRYSTAL AlInN-GaN GROWN BY METALORGANIC VAPOR PHASE EPITAXY
JP2014520388A (ja) * 2011-05-13 2014-08-21 ザ リージェンツ オブ ザ ユニバーシティ オブ カリフォルニア 非ｃ−平面（Ａｌ，Ｇａ，Ｉｎ）に対するシリコン（Ｓｉ）ドーピングによる、傾斜欠陥形成の抑制および臨界厚の増加
US8698163B2 (en) * 2011-09-29 2014-04-15 Toshiba Techno Center Inc. P-type doping layers for use with light emitting devices
WO2013157014A1 (en) 2012-04-20 2013-10-24 Tata Institute Of Fundamental Research Group iii-nitride semiconducting material and a method of manufacturing the same
JP7614602B2 (ja) * 2019-10-31 2025-01-16 東ソー株式会社 積層膜構造体及びその製造方法

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WO1998047170A1 (fr) 1997-04-11 1998-10-22 Nichia Chemical Industries, Ltd. Procede assurant la croissance de semi-conducteurs de nitrure, substrat semi-conducteur de nitrure et dispositif semi-conducteur au nitrure.
JPS62119196A (ja) 1985-11-18 1987-05-30 Univ Nagoya 化合物半導体の成長方法
JP2704181B2 (ja) * 1989-02-13 1998-01-26 日本電信電話株式会社 化合物半導体単結晶薄膜の成長方法
US5741724A (en) 1996-12-27 1998-04-21 Motorola Method of growing gallium nitride on a spinel substrate
JP3119200B2 (ja) * 1997-06-09 2000-12-18 日本電気株式会社 窒化物系化合物半導体の結晶成長方法および窒化ガリウム系発光素子
US6849472B2 (en) * 1997-09-30 2005-02-01 Lumileds Lighting U.S., Llc Nitride semiconductor device with reduced polarization fields
WO1999066565A1 (en) 1998-06-18 1999-12-23 University Of Florida Method and apparatus for producing group-iii nitrides
JP3592553B2 (ja) 1998-10-15 2004-11-24 株式会社東芝 窒化ガリウム系半導体装置
WO2000033388A1 (en) 1998-11-24 2000-06-08 Massachusetts Institute Of Technology METHOD OF PRODUCING DEVICE QUALITY (Al)InGaP ALLOYS ON LATTICE-MISMATCHED SUBSTRATES
KR100506077B1 (ko) * 2000-04-15 2005-08-04 삼성전기주식회사 유기금속기상화학증착법에 의한 고품위 ⅲ-족 질화물 박막성장 방법
US6599362B2 (en) 2001-01-03 2003-07-29 Sandia Corporation Cantilever epitaxial process
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JP3768943B2 (ja) * 2001-09-28 2006-04-19 日本碍子株式会社 Ｉｉｉ族窒化物エピタキシャル基板、ｉｉｉ族窒化物素子用エピタキシャル基板及びｉｉｉ族窒化物素子
JP4031628B2 (ja) * 2001-10-03 2008-01-09 松下電器産業株式会社 半導体多層膜結晶、およびそれを用いた発光素子、ならびに当該半導体多層膜結晶の成長方法
CN1300901C (zh) * 2001-10-26 2007-02-14 波兰商艾蒙诺公司 使用氮化物块状单晶层的发光元件结构
US6847057B1 (en) 2003-08-01 2005-01-25 Lumileds Lighting U.S., Llc Semiconductor light emitting devices
US7432142B2 (en) 2004-05-20 2008-10-07 Cree, Inc. Methods of fabricating nitride-based transistors having regrown ohmic contact regions
KR101145755B1 (ko) 2005-03-10 2012-05-16 재팬 사이언스 앤드 테크놀로지 에이젼시 평면의 반극성 갈륨 질화물의 성장을 위한 기술
KR101351396B1 (ko) 2005-06-01 2014-02-07 재팬 사이언스 앤드 테크놀로지 에이젼시 반극성 (Ｇａ,Ａｌ,Ｉｎ,Ｂ)Ｎ 박막들, 헤테로구조들, 및소자들의 성장 및 제조에 대한 기술
US8148244B2 (en) 2005-07-13 2012-04-03 The Regents Of The University Of California Lateral growth method for defect reduction of semipolar nitride films

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