JP2009283928A - 薄膜トランジスタ及びその作製方法 - Google Patents
薄膜トランジスタ及びその作製方法 Download PDFInfo
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- JP2009283928A JP2009283928A JP2009102520A JP2009102520A JP2009283928A JP 2009283928 A JP2009283928 A JP 2009283928A JP 2009102520 A JP2009102520 A JP 2009102520A JP 2009102520 A JP2009102520 A JP 2009102520A JP 2009283928 A JP2009283928 A JP 2009283928A
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- semiconductor layer
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- film transistor
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- 239000010409 thin film Substances 0.000 title claims abstract description 159
- 238000004519 manufacturing process Methods 0.000 title claims description 36
- 239000004065 semiconductor Substances 0.000 claims abstract description 328
- 239000012535 impurity Substances 0.000 claims abstract description 238
- 239000013078 crystal Substances 0.000 claims abstract description 168
- 239000010408 film Substances 0.000 claims abstract description 79
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 246
- 239000007789 gas Substances 0.000 claims description 180
- 229910052757 nitrogen Inorganic materials 0.000 claims description 123
- 238000012545 processing Methods 0.000 claims description 105
- 239000000758 substrate Substances 0.000 claims description 99
- 238000000034 method Methods 0.000 claims description 95
- 239000000463 material Substances 0.000 claims description 78
- 230000015572 biosynthetic process Effects 0.000 claims description 69
- 230000008021 deposition Effects 0.000 claims description 55
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 52
- 229910052760 oxygen Inorganic materials 0.000 claims description 52
- 239000001301 oxygen Substances 0.000 claims description 52
- 238000010790 dilution Methods 0.000 claims description 13
- 239000012895 dilution Substances 0.000 claims description 13
- 230000007423 decrease Effects 0.000 claims description 9
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 claims description 7
- 238000001004 secondary ion mass spectrometry Methods 0.000 claims description 7
- 238000007865 diluting Methods 0.000 claims description 6
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical group [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 claims description 3
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 claims description 3
- 229910052698 phosphorus Inorganic materials 0.000 claims description 3
- 239000011574 phosphorus Substances 0.000 claims description 3
- 229910052787 antimony Inorganic materials 0.000 claims description 2
- WATWJIUSRGPENY-UHFFFAOYSA-N antimony atom Chemical compound [Sb] WATWJIUSRGPENY-UHFFFAOYSA-N 0.000 claims description 2
- 229910052785 arsenic Inorganic materials 0.000 claims description 2
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 claims description 2
- 229910052797 bismuth Inorganic materials 0.000 claims description 2
- JCXGWMGPZLAOME-UHFFFAOYSA-N bismuth atom Chemical compound [Bi] JCXGWMGPZLAOME-UHFFFAOYSA-N 0.000 claims description 2
- 229910052990 silicon hydride Inorganic materials 0.000 claims description 2
- FDNAPBUWERUEDA-UHFFFAOYSA-N silicon tetrachloride Chemical compound Cl[Si](Cl)(Cl)Cl FDNAPBUWERUEDA-UHFFFAOYSA-N 0.000 claims description 2
- ABTOQLMXBSRXSM-UHFFFAOYSA-N silicon tetrafluoride Chemical compound F[Si](F)(F)F ABTOQLMXBSRXSM-UHFFFAOYSA-N 0.000 claims 1
- 229910021424 microcrystalline silicon Inorganic materials 0.000 abstract description 18
- 230000001965 increasing effect Effects 0.000 abstract description 14
- 230000001276 controlling effect Effects 0.000 abstract 3
- 238000005137 deposition process Methods 0.000 abstract 1
- 239000010410 layer Substances 0.000 description 657
- 238000000151 deposition Methods 0.000 description 65
- 229910052581 Si3N4 Inorganic materials 0.000 description 55
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 55
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 46
- 229910052710 silicon Inorganic materials 0.000 description 46
- 239000010703 silicon Substances 0.000 description 46
- 239000004973 liquid crystal related substance Substances 0.000 description 32
- 230000008569 process Effects 0.000 description 29
- 230000006911 nucleation Effects 0.000 description 18
- 238000010899 nucleation Methods 0.000 description 18
- 238000005530 etching Methods 0.000 description 14
- 238000009832 plasma treatment Methods 0.000 description 13
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 13
- 230000001681 protective effect Effects 0.000 description 12
- 230000006870 function Effects 0.000 description 11
- 229910052782 aluminium Inorganic materials 0.000 description 10
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 10
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 9
- 239000003990 capacitor Substances 0.000 description 9
- 239000001257 hydrogen Substances 0.000 description 9
- 229910052739 hydrogen Inorganic materials 0.000 description 9
- 229910052750 molybdenum Inorganic materials 0.000 description 9
- 239000011733 molybdenum Substances 0.000 description 9
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 8
- 230000007547 defect Effects 0.000 description 8
- 238000005268 plasma chemical vapour deposition Methods 0.000 description 8
- 229910021417 amorphous silicon Inorganic materials 0.000 description 7
- 238000001312 dry etching Methods 0.000 description 7
- 239000011521 glass Substances 0.000 description 7
- 239000000203 mixture Substances 0.000 description 7
- 229910052721 tungsten Inorganic materials 0.000 description 7
- 239000010937 tungsten Substances 0.000 description 7
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 6
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 6
- 229910052802 copper Inorganic materials 0.000 description 6
- 239000010949 copper Substances 0.000 description 6
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 6
- 229910052814 silicon oxide Inorganic materials 0.000 description 6
- 229910052719 titanium Inorganic materials 0.000 description 6
- 239000010936 titanium Substances 0.000 description 6
- 238000002834 transmittance Methods 0.000 description 6
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 6
- 239000000956 alloy Substances 0.000 description 5
- 239000000969 carrier Substances 0.000 description 5
- 230000001413 cellular effect Effects 0.000 description 5
- 229920001940 conductive polymer Polymers 0.000 description 5
- 229910052751 metal Inorganic materials 0.000 description 5
- 239000002184 metal Substances 0.000 description 5
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 5
- 239000012495 reaction gas Substances 0.000 description 5
- 229910052715 tantalum Inorganic materials 0.000 description 5
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 5
- 229910000838 Al alloy Inorganic materials 0.000 description 4
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 4
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 4
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 description 4
- NRTOMJZYCJJWKI-UHFFFAOYSA-N Titanium nitride Chemical compound [Ti]#N NRTOMJZYCJJWKI-UHFFFAOYSA-N 0.000 description 4
- 229910045601 alloy Inorganic materials 0.000 description 4
- 238000006243 chemical reaction Methods 0.000 description 4
- 238000005229 chemical vapour deposition Methods 0.000 description 4
- 239000000460 chlorine Substances 0.000 description 4
- 229910052804 chromium Inorganic materials 0.000 description 4
- 239000011651 chromium Substances 0.000 description 4
- 238000004891 communication Methods 0.000 description 4
- 238000001678 elastic recoil detection analysis Methods 0.000 description 4
- 230000005669 field effect Effects 0.000 description 4
- 229910003437 indium oxide Inorganic materials 0.000 description 4
- PJXISJQVUVHSOJ-UHFFFAOYSA-N indium(iii) oxide Chemical compound [O-2].[O-2].[O-2].[In+3].[In+3] PJXISJQVUVHSOJ-UHFFFAOYSA-N 0.000 description 4
- 238000002347 injection Methods 0.000 description 4
- 239000007924 injection Substances 0.000 description 4
- 230000007246 mechanism Effects 0.000 description 4
- 150000004767 nitrides Chemical class 0.000 description 4
- QGLKJKCYBOYXKC-UHFFFAOYSA-N nonaoxidotritungsten Chemical compound O=[W]1(=O)O[W](=O)(=O)O[W](=O)(=O)O1 QGLKJKCYBOYXKC-UHFFFAOYSA-N 0.000 description 4
- 238000000206 photolithography Methods 0.000 description 4
- 239000002356 single layer Substances 0.000 description 4
- 230000005236 sound signal Effects 0.000 description 4
- OGIDPMRJRNCKJF-UHFFFAOYSA-N titanium oxide Inorganic materials [Ti]=O OGIDPMRJRNCKJF-UHFFFAOYSA-N 0.000 description 4
- 229910001930 tungsten oxide Inorganic materials 0.000 description 4
- 238000001039 wet etching Methods 0.000 description 4
- YVTHLONGBIQYBO-UHFFFAOYSA-N zinc indium(3+) oxygen(2-) Chemical compound [O--].[Zn++].[In+3] YVTHLONGBIQYBO-UHFFFAOYSA-N 0.000 description 4
- 229910000583 Nd alloy Inorganic materials 0.000 description 3
- 229910052779 Neodymium Inorganic materials 0.000 description 3
- 238000004140 cleaning Methods 0.000 description 3
- 238000011161 development Methods 0.000 description 3
- 239000007769 metal material Substances 0.000 description 3
- QEFYFXOXNSNQGX-UHFFFAOYSA-N neodymium atom Chemical compound [Nd] QEFYFXOXNSNQGX-UHFFFAOYSA-N 0.000 description 3
- 150000002894 organic compounds Chemical class 0.000 description 3
- 238000005192 partition Methods 0.000 description 3
- 230000000737 periodic effect Effects 0.000 description 3
- 239000011347 resin Substances 0.000 description 3
- 229920005989 resin Polymers 0.000 description 3
- 238000005001 rutherford backscattering spectroscopy Methods 0.000 description 3
- 238000004544 sputter deposition Methods 0.000 description 3
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 2
- WGLPBDUCMAPZCE-UHFFFAOYSA-N Trioxochromium Chemical compound O=[Cr](=O)=O WGLPBDUCMAPZCE-UHFFFAOYSA-N 0.000 description 2
- UBSJOWMHLJZVDJ-UHFFFAOYSA-N aluminum neodymium Chemical compound [Al].[Nd] UBSJOWMHLJZVDJ-UHFFFAOYSA-N 0.000 description 2
- 229910021529 ammonia Inorganic materials 0.000 description 2
- 230000003321 amplification Effects 0.000 description 2
- 125000004429 atom Chemical group 0.000 description 2
- 230000004888 barrier function Effects 0.000 description 2
- 229910000423 chromium oxide Inorganic materials 0.000 description 2
- 238000000576 coating method Methods 0.000 description 2
- 230000008878 coupling Effects 0.000 description 2
- 238000010168 coupling process Methods 0.000 description 2
- 238000005859 coupling reaction Methods 0.000 description 2
- 229910021419 crystalline silicon Inorganic materials 0.000 description 2
- 238000005520 cutting process Methods 0.000 description 2
- 238000013461 design Methods 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 238000005401 electroluminescence Methods 0.000 description 2
- 230000005281 excited state Effects 0.000 description 2
- 239000000284 extract Substances 0.000 description 2
- 230000002349 favourable effect Effects 0.000 description 2
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 2
- 229910052737 gold Inorganic materials 0.000 description 2
- 239000010931 gold Substances 0.000 description 2
- 230000005525 hole transport Effects 0.000 description 2
- 150000002431 hydrogen Chemical class 0.000 description 2
- 238000003199 nucleic acid amplification method Methods 0.000 description 2
- 238000001020 plasma etching Methods 0.000 description 2
- 239000011148 porous material Substances 0.000 description 2
- 229910052706 scandium Inorganic materials 0.000 description 2
- SIXSYDAISGFNSX-UHFFFAOYSA-N scandium atom Chemical compound [Sc] SIXSYDAISGFNSX-UHFFFAOYSA-N 0.000 description 2
- 229910052709 silver Inorganic materials 0.000 description 2
- 239000004332 silver Substances 0.000 description 2
- 238000004528 spin coating Methods 0.000 description 2
- -1 tungsten nitride Chemical class 0.000 description 2
- 238000001771 vacuum deposition Methods 0.000 description 2
- 239000004925 Acrylic resin Substances 0.000 description 1
- 229920000178 Acrylic resin Polymers 0.000 description 1
- 229910017073 AlLi Inorganic materials 0.000 description 1
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- ZAMOUSCENKQFHK-UHFFFAOYSA-N Chlorine atom Chemical compound [Cl] ZAMOUSCENKQFHK-UHFFFAOYSA-N 0.000 description 1
- 229910019974 CrSi Inorganic materials 0.000 description 1
- MYMOFIZGZYHOMD-UHFFFAOYSA-N Dioxygen Chemical compound O=O MYMOFIZGZYHOMD-UHFFFAOYSA-N 0.000 description 1
- KRHYYFGTRYWZRS-UHFFFAOYSA-M Fluoride anion Chemical compound [F-] KRHYYFGTRYWZRS-UHFFFAOYSA-M 0.000 description 1
- DGAQECJNVWCQMB-PUAWFVPOSA-M Ilexoside XXIX Chemical compound C[C@@H]1CC[C@@]2(CC[C@@]3(C(=CC[C@H]4[C@]3(CC[C@@H]5[C@@]4(CC[C@@H](C5(C)C)OS(=O)(=O)[O-])C)C)[C@@H]2[C@]1(C)O)C)C(=O)O[C@H]6[C@@H]([C@H]([C@@H]([C@H](O6)CO)O)O)O.[Na+] DGAQECJNVWCQMB-PUAWFVPOSA-M 0.000 description 1
- 229910016006 MoSi Inorganic materials 0.000 description 1
- 239000004952 Polyamide Substances 0.000 description 1
- 239000004642 Polyimide Substances 0.000 description 1
- 229910000676 Si alloy Inorganic materials 0.000 description 1
- 229910003902 SiCl 4 Inorganic materials 0.000 description 1
- 229910001362 Ta alloys Inorganic materials 0.000 description 1
- 239000003513 alkali Substances 0.000 description 1
- 239000005407 aluminoborosilicate glass Substances 0.000 description 1
- 239000005354 aluminosilicate glass Substances 0.000 description 1
- 238000004380 ashing Methods 0.000 description 1
- 229910052788 barium Inorganic materials 0.000 description 1
- DSAJWYNOEDNPEQ-UHFFFAOYSA-N barium atom Chemical compound [Ba] DSAJWYNOEDNPEQ-UHFFFAOYSA-N 0.000 description 1
- 239000002585 base Substances 0.000 description 1
- 230000002457 bidirectional effect Effects 0.000 description 1
- 239000011230 binding agent Substances 0.000 description 1
- 239000005388 borosilicate glass Substances 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 229910052801 chlorine Inorganic materials 0.000 description 1
- SLLGVCUQYRMELA-UHFFFAOYSA-N chlorosilicon Chemical compound Cl[Si] SLLGVCUQYRMELA-UHFFFAOYSA-N 0.000 description 1
- 239000003086 colorant Substances 0.000 description 1
- 238000004040 coloring Methods 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 238000011109 contamination Methods 0.000 description 1
- 229920001577 copolymer Polymers 0.000 description 1
- 238000002425 crystallisation Methods 0.000 description 1
- 230000008025 crystallization Effects 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 238000006731 degradation reaction Methods 0.000 description 1
- 230000003111 delayed effect Effects 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 239000003085 diluting agent Substances 0.000 description 1
- 229910001882 dioxygen Inorganic materials 0.000 description 1
- 238000007599 discharging Methods 0.000 description 1
- KPUWHANPEXNPJT-UHFFFAOYSA-N disiloxane Chemical class [SiH3]O[SiH3] KPUWHANPEXNPJT-UHFFFAOYSA-N 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 230000009977 dual effect Effects 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 238000007667 floating Methods 0.000 description 1
- 239000008187 granular material Substances 0.000 description 1
- 230000005283 ground state Effects 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 230000001939 inductive effect Effects 0.000 description 1
- 150000002484 inorganic compounds Chemical class 0.000 description 1
- 229910010272 inorganic material Inorganic materials 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 230000001678 irradiating effect Effects 0.000 description 1
- 238000005224 laser annealing Methods 0.000 description 1
- 239000011159 matrix material Substances 0.000 description 1
- 238000000691 measurement method Methods 0.000 description 1
- 229910021645 metal ion Inorganic materials 0.000 description 1
- QEHKBHWEUPXBCW-UHFFFAOYSA-N nitrogen trichloride Chemical compound ClN(Cl)Cl QEHKBHWEUPXBCW-UHFFFAOYSA-N 0.000 description 1
- GVGCUCJTUSOZKP-UHFFFAOYSA-N nitrogen trifluoride Chemical compound FN(F)F GVGCUCJTUSOZKP-UHFFFAOYSA-N 0.000 description 1
- 239000005416 organic matter Substances 0.000 description 1
- AHLBNYSZXLDEJQ-FWEHEUNISA-N orlistat Chemical compound CCCCCCCCCCC[C@H](OC(=O)[C@H](CC(C)C)NC=O)C[C@@H]1OC(=O)[C@H]1CCCCCC AHLBNYSZXLDEJQ-FWEHEUNISA-N 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 230000000704 physical effect Effects 0.000 description 1
- 239000004033 plastic Substances 0.000 description 1
- 229910052696 pnictogen Inorganic materials 0.000 description 1
- 229920002647 polyamide Polymers 0.000 description 1
- 229920000767 polyaniline Polymers 0.000 description 1
- 229920001721 polyimide Polymers 0.000 description 1
- 229920000642 polymer Polymers 0.000 description 1
- 229920000128 polypyrrole Polymers 0.000 description 1
- 229920000123 polythiophene Polymers 0.000 description 1
- 230000002265 prevention Effects 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- 230000006798 recombination Effects 0.000 description 1
- 238000005215 recombination Methods 0.000 description 1
- 230000002441 reversible effect Effects 0.000 description 1
- 238000007650 screen-printing Methods 0.000 description 1
- 229910000077 silane Inorganic materials 0.000 description 1
- 239000011734 sodium Substances 0.000 description 1
- 229910052708 sodium Inorganic materials 0.000 description 1
- 238000003860 storage Methods 0.000 description 1
- MZLGASXMSKOWSE-UHFFFAOYSA-N tantalum nitride Chemical compound [Ta]#N MZLGASXMSKOWSE-UHFFFAOYSA-N 0.000 description 1
- 230000007704 transition Effects 0.000 description 1
- 238000007666 vacuum forming Methods 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
- H01L27/1259—Multistep manufacturing methods
- H01L27/127—Multistep manufacturing methods with a particular formation, treatment or patterning of the active layer specially adapted to the circuit arrangement
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/02—Pretreatment of the material to be coated
- C23C16/0272—Deposition of sub-layers, e.g. to promote the adhesion of the main coating
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
- C23C16/24—Deposition of silicon only
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
- H01L27/1259—Multistep manufacturing methods
- H01L27/1288—Multistep manufacturing methods employing particular masking sequences or specially adapted masks, e.g. half-tone mask
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
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Abstract
【解決手段】非晶質構造の中に複数の結晶領域を含む半導体層において、該結晶領域が生成する起点となる結晶核の生成位置と生成密度を制御することで、該半導体層の膜質を制御する。また、半導体層の結晶領域が生成する起点となる結晶核を生成した後、ドナーとなる不純物元素を半導体層に添加して、半導体層の結晶性を高めると共に、半導体層の抵抗率を低減する。
【選択図】図1
Description
本実施の形態では、薄膜トランジスタの形態の一例について、図面を参照して説明する。
本実施の形態では、図1に示す薄膜トランジスタの作製方法であって、実施の形態1とは異なるものについて説明する。本実施の形態では、実施の形態1と同様に、逆錐形の形状である結晶粒を含み、ドナーとなる不純物元素が添加された半導体層を形成する。ただし、ドナーとなる不純物元素が添加された半導体層にドナーとなる不純物元素を添加する手段が異なる。
本実施の形態では、図1に示す薄膜トランジスタの作製方法であって、実施の形態1及び実施の形態2とは異なるものについて説明する。本実施の形態では、実施の形態1と同様に、逆錐形の形状である結晶粒を含み、ドナーとなる不純物元素が添加された半導体層を形成する。ただし、半導体層に窒素を含ませる手段が異なる。なお、本実施の形態では、ドナーとなる不純物元素の添加方法として実施の形態1を用いて示すが、適宜実施の形態2を用いることができる。
本実施の形態では、図1に示す薄膜トランジスタの作製方法であって、実施の形態1乃至実施の形態3とは異なるものについて説明する。本実施の形態では、実施の形態1及び実施の形態3と同様に、逆錐形の形状である結晶粒を含み、ドナーとなる不純物元素が添加された半導体層を形成する。ただし、ドナーとなる不純物元素が添加された半導体層に窒素を含ませる手段が異なる。なお、本実施の形態では、ドナーとなる不純物元素の添加方法として実施の形態1を用いて示すが、適宜実施の形態2を用いることができる。
本実施の形態では、実施の形態1乃至実施の形態4とは異なる半導体装置の作製方法について説明する。本実施の形態では、実施の形態1と同様に、逆錐形の形状である結晶粒を含み、ドナーとなる不純物元素が添加された半導体層を形成する。ただし、ドナーとなる不純物元素が添加された半導体層に窒素を含ませる手段が異なる。なお、本実施の形態では、ドナーとなる不純物元素の添加方法として実施の形態1を用いて示すが、適宜実施の形態2を用いることができる。
本実施の形態では、薄膜トランジスタの形態の一例について、図面を参照して説明する。本実施の形態では、多階調マスクを用いることなく薄膜トランジスタを形成する。
本実施の形態では、表示装置の一形態として、実施の形態6で示す薄膜トランジスタを有する液晶表示装置について、以下に示す。ここでは、VA(Vertical Alignment)型の液晶表示装置について、図17乃至図19を用いて説明する。VA型とは、液晶パネルの液晶分子の配列を制御する方式の一種をいう。VA型の液晶表示装置は、電圧が印加されていないときにパネル面に対して液晶分子が垂直方向を向く方式である。本実施の形態では、特に画素(ピクセル)をいくつかの領域(サブピクセル)に分け、それぞれ別の方向に分子を倒すよう工夫されている。これをマルチドメイン化あるいはマルチドメイン設計という。以下の説明では、マルチドメイン設計が考慮された液晶表示装置について説明する。
本実施の形態では、表示装置の一形態として、実施の形態6で示す薄膜トランジスタを有する発光表示装置について、以下に示す。ここでは、発光表示装置が有する画素の構成の一形態について説明する。図20(A)に、画素の平面図を示し、図20(B)に図20(A)中の切断線A−Bに対応する断面構造を示す。
次に、上記実施の形態の適用が可能な表示装置である表示パネルの構成の一例について、以下に示す。
本形態の薄膜トランジスタで構成される素子基板、及びそれを用いた表示装置等は、アクティブマトリクス型の表示パネルに適用することができる。すなわち、それらを表示部に組み込んだ電子機器の全てに上記実施の形態を実施できる。
Claims (15)
- 絶縁表面を有する基板上に、ゲート電極を覆うゲート絶縁層と、
前記ゲート絶縁層に接し、非晶質構造の中に複数の結晶領域を含みチャネル形成領域を構成する半導体層と、
ソース領域及びドレイン領域を形成する一導電型不純物半導体層と、
前記半導体層と前記一導電型不純物半導体層との間の非晶質半導体により構成されるバッファ層とを有し、
前記結晶領域は、前記ゲート絶縁層と前記半導体層との界面から離れた位置から前記半導体層が堆積される方向に向けて、略放射状に成長した逆錐形であり、
前記半導体層はドナーとなる不純物元素を含むことを特徴とする薄膜トランジスタ。 - 絶縁表面を有する基板上に、ゲート電極を覆うゲート絶縁層と、
前記ゲート絶縁層に接し、非晶質構造の中に複数の結晶領域を含む第1半導体層と、
前記第1半導体層に積層され、非晶質構造を有する第2半導体層と、
ソース領域及びドレイン領域を形成する一導電型不純物半導体層と、を有し、
前記結晶領域は、前記ゲート絶縁層と前記第1半導体層との界面から離れた位置から、前記第2半導体層に向けて、略放射状に成長した逆錐形であり、
前記半導体層はドナーとなる不純物元素を含むことを特徴とする薄膜トランジスタ。 - 請求項1または2において、
前記ドナーとなる不純物元素の二次イオン質量分析法によって計測される濃度は、1×1016/cm3乃至3×1018/cm3であることを特徴とする薄膜トランジスタ。 - 請求項1乃至3のいずれか一項において、
前記ドナーとなる不純物元素は、リン、砒素、アンチモン、またはビスマスであることを特徴とする薄膜トランジスタ。 - 請求項1乃至4のいずれか一項において、
前記半導体層は、二次イオン質量分析法によって計測される窒素濃度が1×1020/cm3乃至1×1021/cm3であることを特徴とする薄膜トランジスタ。 - 請求項5において、
前記窒素濃度は、前記ゲート絶縁層と前記半導体層との界面近傍において、二次イオン質量分析法によって計測されるピーク濃度が3×1020/cm3乃至1×1021/cm3であり、該界面近傍から前記半導体層の厚さ方向に向けて窒素濃度が減少していることを特徴とする薄膜トランジスタ。 - 請求項1乃至6のいずれか一項において、
前記半導体層は、二次イオン質量分析法によって計測される酸素濃度が、5×1018/cm3以下であることを特徴とする薄膜トランジスタ。 - 請求項1乃至7のいずれか一項において、
前記結晶領域は単結晶であることを特徴とする薄膜トランジスタ。 - 請求項8において、
前記単結晶は双晶を含むことを特徴とする薄膜トランジスタ。 - ゲート電極が設けられた絶縁表面を有する基板上にゲート絶縁層を形成し、
前記ゲート絶縁層上に、微結晶半導体の生成が可能な混合比で半導体材料ガスと希釈ガスとを、酸素濃度を低減させた処理室内に導入し、グロー放電プラズマを生成し、堆積初期段階において結晶核の生成を妨害する窒素を含ませて被膜の堆積を開始し、該被膜が5nm乃至20nm堆積した後、ドナーとなる元素を含む気体を前記処理室内に導入し、非晶質構造の中に複数の結晶領域を含み、ドナーとなる不純物元素が添加された半導体層を形成し、
前記半導体層上に、非晶質半導体により構成されるバッファ層を形成し、
前記バッファ層上にソース領域及びドレイン領域を形成する一導電型不純物半導体層を形成し、
前記一導電型不純物半導体層上に、ソース電極及びドレイン電極を形成することを特徴とする薄膜トランジスタの作製方法。 - ゲート電極が設けられた絶縁表面を有する基板上にゲート絶縁層を形成し、
前記ゲート絶縁層上に、微結晶半導体の生成が可能な混合比で半導体材料ガスと希釈ガスとを、酸素濃度を低減させた処理室内に導入し、グロー放電プラズマを生成し、堆積初期段階において結晶核の生成を妨害する窒素を含ませて被膜の堆積を開始し、該被膜が5nm乃至20nm堆積した後、前記グロー放電プラズマを停止し、前記微結晶半導体の生成が可能な混合比で半導体材料ガスと希釈ガスの導入を停止し、ドナーとなる元素を含む気体を前記処理室内に導入した後、前記ドナーとなる不純物元素を含む気体の導入を停止し、微結晶半導体の生成が可能な混合比で半導体材料ガスと希釈ガスとを、酸素濃度を低減させた前記処理室内に導入し、グロー放電プラズマを生成して、非晶質構造の中に複数の結晶領域を含み、且つ不純物元素が添加された半導体層を形成し、
前記半導体層上に、非晶質半導体により構成されるバッファ層を形成し、
前記バッファ層上にソース領域及びドレイン領域を形成する一導電型不純物半導体層を形成し、
前記一導電型不純物半導体層上に、ソース電極及びドレイン電極を形成することを特徴とする薄膜トランジスタの作製方法。 - 請求項10または11において、
前記半導体材料ガスと希釈ガスとを前記処理室に導入する前に、結晶核の生成を妨害する窒素が残留するように、窒素を含む気体を一時的に該処理室に導入することを特徴とする薄膜トランジスタの作製方法。 - 請求項11において、
前記ゲート絶縁層として、結晶核の生成を妨害する窒素を含む絶縁層を形成することを特徴とする薄膜トランジスタの作製方法。 - 請求項11において、
前記結晶核の生成を妨害する窒素を含む絶縁層を、前記処理室内に予め被着させておくことを特徴とする薄膜トランジスタの作製方法。 - 請求項10乃至14のいずれか一項において、
前記半導体材料ガスが、水素化珪素ガス、フッ化珪素ガスまたは塩化珪素ガスであり、前記希釈ガスが水素ガスであることを特徴とする薄膜トランジスタの作製方法。
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JP2011216871A (ja) * | 2010-03-15 | 2011-10-27 | Semiconductor Energy Lab Co Ltd | 半導体装置 |
JP2018129462A (ja) * | 2017-02-10 | 2018-08-16 | 株式会社半導体エネルギー研究所 | 表示装置およびその作製方法 |
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US8049215B2 (en) * | 2008-04-25 | 2011-11-01 | Semiconductor Energy Laboratory Co., Ltd. | Thin film transistor |
EP2291856A4 (en) * | 2008-06-27 | 2015-09-23 | Semiconductor Energy Lab | THIN FILM TRANSISTOR |
WO2009157573A1 (en) * | 2008-06-27 | 2009-12-30 | Semiconductor Energy Laboratory Co., Ltd. | Thin film transistor, semiconductor device and electronic device |
JP5498762B2 (ja) * | 2008-11-17 | 2014-05-21 | 株式会社半導体エネルギー研究所 | 薄膜トランジスタの作製方法 |
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