JP2009283902A - 光学デバイスとこれを備えた電子機器 - Google Patents
光学デバイスとこれを備えた電子機器 Download PDFInfo
- Publication number
- JP2009283902A JP2009283902A JP2009034233A JP2009034233A JP2009283902A JP 2009283902 A JP2009283902 A JP 2009283902A JP 2009034233 A JP2009034233 A JP 2009034233A JP 2009034233 A JP2009034233 A JP 2009034233A JP 2009283902 A JP2009283902 A JP 2009283902A
- Authority
- JP
- Japan
- Prior art keywords
- optical device
- semiconductor substrate
- light
- electrode
- shielding film
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Withdrawn
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Classifications
-
- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
- H04N23/00—Cameras or camera modules comprising electronic image sensors; Control thereof
- H04N23/50—Constructional details
- H04N23/54—Mounting of pick-up tubes, electronic image sensors, deviation or focusing coils
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
- H10F39/80—Constructional details of image sensors
- H10F39/805—Coatings
- H10F39/8057—Optical shielding
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
- H10F39/80—Constructional details of image sensors
- H10F39/806—Optical elements or arrangements associated with the image sensors
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
- H10F39/80—Constructional details of image sensors
- H10F39/806—Optical elements or arrangements associated with the image sensors
- H10F39/8063—Microlenses
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
- H10F39/80—Constructional details of image sensors
- H10F39/803—Pixels having integrated switching, control, storage or amplification elements
Landscapes
- Engineering & Computer Science (AREA)
- Multimedia (AREA)
- Signal Processing (AREA)
- Solid State Image Pick-Up Elements (AREA)
- Transforming Light Signals Into Electric Signals (AREA)
Priority Applications (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2009034233A JP2009283902A (ja) | 2008-04-25 | 2009-02-17 | 光学デバイスとこれを備えた電子機器 |
| PCT/JP2009/000961 WO2009130839A1 (ja) | 2008-04-25 | 2009-03-03 | 光学デバイスとこれを備えた電子機器 |
| US12/712,420 US20100148294A1 (en) | 2008-04-25 | 2010-02-25 | Optical device and electronic devices using the same |
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2008116022 | 2008-04-25 | ||
| JP2008116018 | 2008-04-25 | ||
| JP2009034233A JP2009283902A (ja) | 2008-04-25 | 2009-02-17 | 光学デバイスとこれを備えた電子機器 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JP2009283902A true JP2009283902A (ja) | 2009-12-03 |
| JP2009283902A5 JP2009283902A5 (enExample) | 2012-01-26 |
Family
ID=41216582
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2009034233A Withdrawn JP2009283902A (ja) | 2008-04-25 | 2009-02-17 | 光学デバイスとこれを備えた電子機器 |
Country Status (3)
| Country | Link |
|---|---|
| US (1) | US20100148294A1 (enExample) |
| JP (1) | JP2009283902A (enExample) |
| WO (1) | WO2009130839A1 (enExample) |
Cited By (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2011066093A (ja) * | 2009-09-15 | 2011-03-31 | Olympus Corp | 撮像ユニット |
| JP2013175626A (ja) * | 2012-02-27 | 2013-09-05 | Nikon Corp | 固体撮像装置及びその製造方法 |
| JP2015207638A (ja) * | 2014-04-18 | 2015-11-19 | キヤノン株式会社 | 光電変換素子およびその製造方法 |
| US9287318B2 (en) | 2013-04-08 | 2016-03-15 | Canon Kabushiki Kaisha | Solid-state imaging sensor, method of manufacturing the same, and camera |
| JP2017204891A (ja) * | 2015-08-10 | 2017-11-16 | 大日本印刷株式会社 | イメージセンサモジュール |
| WO2018163236A1 (ja) * | 2017-03-06 | 2018-09-13 | オリンパス株式会社 | 半導体装置および半導体装置の製造方法 |
| WO2020246323A1 (ja) * | 2019-06-04 | 2020-12-10 | ソニーセミコンダクタソリューションズ株式会社 | 撮像装置 |
| JP2020537332A (ja) * | 2017-10-09 | 2020-12-17 | オスラム オーエルイーディー ゲゼルシャフト ミット ベシュレンクテル ハフツングOSRAM OLED GmbH | オプトエレクトロニクス半導体部品、およびオプトエレクトロニクス半導体部品を製造するための方法 |
Families Citing this family (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US9772286B2 (en) * | 2010-06-21 | 2017-09-26 | Sbi Pharmaceuticals Co., Ltd. | Method for detection of urothelial cancer |
| KR20140126598A (ko) * | 2013-04-23 | 2014-10-31 | 삼성전자주식회사 | 반도체 패키지 및 그 제조 방법 |
| US9627559B2 (en) * | 2015-03-16 | 2017-04-18 | Omnivision Technologies, Inc. | Optical assemblies including dry adhesive layers and associated methods |
| JP2017032798A (ja) * | 2015-07-31 | 2017-02-09 | ソニーセミコンダクタソリューションズ株式会社 | レンズ付き基板、積層レンズ構造体、カメラモジュール、並びに、製造装置および方法 |
| CN111129049B (zh) * | 2019-11-29 | 2023-06-02 | 上海集成电路研发中心有限公司 | 一种图像传感器结构和形成方法 |
| JP2022142329A (ja) * | 2021-03-16 | 2022-09-30 | 株式会社ジャパンディスプレイ | 検出装置および表示装置 |
Family Cites Families (14)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH05335532A (ja) * | 1992-05-28 | 1993-12-17 | Sanyo Electric Co Ltd | 光半導体装置 |
| JP4271904B2 (ja) * | 2002-06-24 | 2009-06-03 | 富士フイルム株式会社 | 固体撮像装置の製造方法 |
| JP5030360B2 (ja) * | 2002-12-25 | 2012-09-19 | オリンパス株式会社 | 固体撮像装置の製造方法 |
| TW200535918A (en) * | 2004-03-09 | 2005-11-01 | Japan Science & Tech Agency | Semiconductor device and methods for fabricating the same, semiconductor system having laminated structure, semiconductor interposer, and semiconductor system |
| JP2005347707A (ja) * | 2004-06-07 | 2005-12-15 | Sony Corp | 固体撮像素子及びその製造方法 |
| JP2005347708A (ja) * | 2004-06-07 | 2005-12-15 | Sony Corp | 固体撮像素子及びその製造方法 |
| JP4483442B2 (ja) * | 2004-07-13 | 2010-06-16 | ソニー株式会社 | 固体撮像素子と固体撮像装置、固体撮像素子の製造方法 |
| KR100644521B1 (ko) * | 2004-07-29 | 2006-11-10 | 매그나칩 반도체 유한회사 | 마이크로렌즈의 겉보기 크기가 향상된 이미지센서 및 그제조 방법 |
| WO2006073085A1 (ja) * | 2005-01-04 | 2006-07-13 | I Square Reserch Co., Ltd. | 固体撮像装置及びその製造方法 |
| JP2006261638A (ja) * | 2005-02-21 | 2006-09-28 | Sony Corp | 固体撮像装置および固体撮像装置の駆動方法 |
| JP2007142058A (ja) * | 2005-11-17 | 2007-06-07 | Matsushita Electric Ind Co Ltd | 半導体撮像素子およびその製造方法並びに半導体撮像装置とその製造方法 |
| JP4794283B2 (ja) * | 2005-11-18 | 2011-10-19 | パナソニック株式会社 | 固体撮像装置 |
| JP2007299929A (ja) * | 2006-04-28 | 2007-11-15 | Matsushita Electric Ind Co Ltd | 光学デバイス装置とそれを用いた光学デバイスモジュール |
| JP5136110B2 (ja) * | 2008-02-19 | 2013-02-06 | ソニー株式会社 | 固体撮像装置の製造方法 |
-
2009
- 2009-02-17 JP JP2009034233A patent/JP2009283902A/ja not_active Withdrawn
- 2009-03-03 WO PCT/JP2009/000961 patent/WO2009130839A1/ja not_active Ceased
-
2010
- 2010-02-25 US US12/712,420 patent/US20100148294A1/en not_active Abandoned
Cited By (13)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2011066093A (ja) * | 2009-09-15 | 2011-03-31 | Olympus Corp | 撮像ユニット |
| JP2013175626A (ja) * | 2012-02-27 | 2013-09-05 | Nikon Corp | 固体撮像装置及びその製造方法 |
| US9287318B2 (en) | 2013-04-08 | 2016-03-15 | Canon Kabushiki Kaisha | Solid-state imaging sensor, method of manufacturing the same, and camera |
| JP2015207638A (ja) * | 2014-04-18 | 2015-11-19 | キヤノン株式会社 | 光電変換素子およびその製造方法 |
| US9502460B2 (en) | 2014-04-18 | 2016-11-22 | Canon Kabushiki Kaisha | Photoelectric conversion element and method of manufacturing the same |
| US11153471B2 (en) | 2015-08-10 | 2021-10-19 | Dai Nippon Printing Co., Ltd. | Through-hole electrode substrate |
| JP2017204891A (ja) * | 2015-08-10 | 2017-11-16 | 大日本印刷株式会社 | イメージセンサモジュール |
| US10681256B2 (en) | 2015-08-10 | 2020-06-09 | Dai Nippon Printing Co., Ltd. | Image sensor module including a light-transmissive interposer substrate having a through-hole |
| WO2018163236A1 (ja) * | 2017-03-06 | 2018-09-13 | オリンパス株式会社 | 半導体装置および半導体装置の製造方法 |
| JP2020537332A (ja) * | 2017-10-09 | 2020-12-17 | オスラム オーエルイーディー ゲゼルシャフト ミット ベシュレンクテル ハフツングOSRAM OLED GmbH | オプトエレクトロニクス半導体部品、およびオプトエレクトロニクス半導体部品を製造するための方法 |
| US11316075B2 (en) | 2017-10-09 | 2022-04-26 | Osram Oled Gmbh | Optoelectronic semiconductor component, and method for producing an optoelectronic semiconductor component |
| JP7108687B2 (ja) | 2017-10-09 | 2022-07-28 | オスラム オーエルイーディー ゲゼルシャフト ミット ベシュレンクテル ハフツング | オプトエレクトロニクス半導体部品、およびオプトエレクトロニクス半導体部品を製造するための方法 |
| WO2020246323A1 (ja) * | 2019-06-04 | 2020-12-10 | ソニーセミコンダクタソリューションズ株式会社 | 撮像装置 |
Also Published As
| Publication number | Publication date |
|---|---|
| WO2009130839A1 (ja) | 2009-10-29 |
| US20100148294A1 (en) | 2010-06-17 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20111206 |
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| A621 | Written request for application examination |
Free format text: JAPANESE INTERMEDIATE CODE: A621 Effective date: 20111206 |
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| A761 | Written withdrawal of application |
Free format text: JAPANESE INTERMEDIATE CODE: A761 Effective date: 20120124 |
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| RD02 | Notification of acceptance of power of attorney |
Free format text: JAPANESE INTERMEDIATE CODE: A7422 Effective date: 20120124 |