JP2009283895A - Ｉｉｉ族窒化物半導体積層構造体 - Google Patents
Ｉｉｉ族窒化物半導体積層構造体 Download PDFInfo
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- JP2009283895A JP2009283895A JP2008318791A JP2008318791A JP2009283895A JP 2009283895 A JP2009283895 A JP 2009283895A JP 2008318791 A JP2008318791 A JP 2008318791A JP 2008318791 A JP2008318791 A JP 2008318791A JP 2009283895 A JP2009283895 A JP 2009283895A
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- Prior art keywords
- group iii
- layer
- nitride semiconductor
- iii nitride
- aln
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- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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- 239000004065 semiconductor Substances 0.000 title claims abstract description 110
- 150000004767 nitrides Chemical class 0.000 title claims abstract description 57
- 239000000758 substrate Substances 0.000 claims abstract description 126
- 229910052594 sapphire Inorganic materials 0.000 claims abstract description 85
- 239000010980 sapphire Substances 0.000 claims abstract description 85
- 229910052760 oxygen Inorganic materials 0.000 claims abstract description 31
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims abstract description 30
- 239000001301 oxygen Substances 0.000 claims abstract description 30
- 230000003746 surface roughness Effects 0.000 claims abstract description 7
- 239000013078 crystal Substances 0.000 claims description 176
- 238000000034 method Methods 0.000 claims description 88
- 238000004544 sputter deposition Methods 0.000 claims description 28
- 238000002441 X-ray diffraction Methods 0.000 claims description 12
- 238000001552 radio frequency sputter deposition Methods 0.000 claims description 3
- 239000010408 film Substances 0.000 abstract description 139
- 239000010409 thin film Substances 0.000 abstract description 30
- 229910002601 GaN Inorganic materials 0.000 description 111
- 239000007789 gas Substances 0.000 description 62
- 230000007547 defect Effects 0.000 description 43
- 230000015572 biosynthetic process Effects 0.000 description 22
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 20
- 230000002441 reversible effect Effects 0.000 description 20
- XCZXGTMEAKBVPV-UHFFFAOYSA-N trimethylgallium Chemical compound C[Ga](C)C XCZXGTMEAKBVPV-UHFFFAOYSA-N 0.000 description 18
- 239000011777 magnesium Substances 0.000 description 17
- 229910052757 nitrogen Inorganic materials 0.000 description 15
- 239000000463 material Substances 0.000 description 13
- 238000005253 cladding Methods 0.000 description 12
- 239000012535 impurity Substances 0.000 description 12
- 239000000126 substance Substances 0.000 description 12
- 230000008569 process Effects 0.000 description 11
- IBEFSUTVZWZJEL-UHFFFAOYSA-N trimethylindium Chemical compound C[In](C)C IBEFSUTVZWZJEL-UHFFFAOYSA-N 0.000 description 11
- 238000005259 measurement Methods 0.000 description 10
- 238000009832 plasma treatment Methods 0.000 description 10
- RGGPNXQUMRMPRA-UHFFFAOYSA-N triethylgallium Chemical compound CC[Ga](CC)CC RGGPNXQUMRMPRA-UHFFFAOYSA-N 0.000 description 10
- 230000004888 barrier function Effects 0.000 description 9
- 239000012159 carrier gas Substances 0.000 description 9
- 238000004833 X-ray photoelectron spectroscopy Methods 0.000 description 8
- 229910052782 aluminium Inorganic materials 0.000 description 8
- 125000004429 atom Chemical group 0.000 description 8
- 238000000151 deposition Methods 0.000 description 8
- 239000002245 particle Substances 0.000 description 8
- 230000002829 reductive effect Effects 0.000 description 8
- JLTRXTDYQLMHGR-UHFFFAOYSA-N trimethylaluminium Chemical compound C[Al](C)C JLTRXTDYQLMHGR-UHFFFAOYSA-N 0.000 description 8
- 229910002704 AlGaN Inorganic materials 0.000 description 7
- 239000002019 doping agent Substances 0.000 description 7
- 239000000203 mixture Substances 0.000 description 7
- -1 that is Inorganic materials 0.000 description 7
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 6
- 238000011109 contamination Methods 0.000 description 6
- 238000007872 degassing Methods 0.000 description 6
- 238000004519 manufacturing process Methods 0.000 description 6
- 229910052786 argon Inorganic materials 0.000 description 5
- 239000012298 atmosphere Substances 0.000 description 5
- 230000008021 deposition Effects 0.000 description 5
- 230000000694 effects Effects 0.000 description 5
- 239000010931 gold Substances 0.000 description 5
- 229910052739 hydrogen Inorganic materials 0.000 description 5
- 230000007246 mechanism Effects 0.000 description 5
- 230000003287 optical effect Effects 0.000 description 5
- 238000000206 photolithography Methods 0.000 description 5
- 239000002994 raw material Substances 0.000 description 5
- 238000000137 annealing Methods 0.000 description 4
- 230000008901 benefit Effects 0.000 description 4
- 230000005540 biological transmission Effects 0.000 description 4
- 238000005136 cathodoluminescence Methods 0.000 description 4
- 238000006243 chemical reaction Methods 0.000 description 4
- 238000005229 chemical vapour deposition Methods 0.000 description 4
- 150000001875 compounds Chemical class 0.000 description 4
- 238000000354 decomposition reaction Methods 0.000 description 4
- 238000010894 electron beam technology Methods 0.000 description 4
- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 3
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 3
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 3
- 229910021529 ammonia Inorganic materials 0.000 description 3
- 238000004458 analytical method Methods 0.000 description 3
- 238000005422 blasting Methods 0.000 description 3
- 230000008859 change Effects 0.000 description 3
- 230000000052 comparative effect Effects 0.000 description 3
- 230000003247 decreasing effect Effects 0.000 description 3
- 230000001066 destructive effect Effects 0.000 description 3
- 238000001312 dry etching Methods 0.000 description 3
- 239000001257 hydrogen Substances 0.000 description 3
- 229910052751 metal Inorganic materials 0.000 description 3
- 239000002184 metal Substances 0.000 description 3
- 238000002156 mixing Methods 0.000 description 3
- 230000001681 protective effect Effects 0.000 description 3
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 2
- 229910052774 Proactinium Inorganic materials 0.000 description 2
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 2
- 238000003917 TEM image Methods 0.000 description 2
- 238000004140 cleaning Methods 0.000 description 2
- 238000007796 conventional method Methods 0.000 description 2
- 238000002425 crystallisation Methods 0.000 description 2
- 230000008025 crystallization Effects 0.000 description 2
- 230000007423 decrease Effects 0.000 description 2
- 238000013461 design Methods 0.000 description 2
- 238000001514 detection method Methods 0.000 description 2
- 229910003460 diamond Inorganic materials 0.000 description 2
- 239000010432 diamond Substances 0.000 description 2
- 238000009826 distribution Methods 0.000 description 2
- 238000002003 electron diffraction Methods 0.000 description 2
- 229920006332 epoxy adhesive Polymers 0.000 description 2
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 2
- 229910052737 gold Inorganic materials 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- 238000011065 in-situ storage Methods 0.000 description 2
- 239000004973 liquid crystal related substance Substances 0.000 description 2
- 238000001451 molecular beam epitaxy Methods 0.000 description 2
- 238000012545 processing Methods 0.000 description 2
- 238000005546 reactive sputtering Methods 0.000 description 2
- 230000009467 reduction Effects 0.000 description 2
- 238000000682 scanning probe acoustic microscopy Methods 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 238000001228 spectrum Methods 0.000 description 2
- VOITXYVAKOUIBA-UHFFFAOYSA-N triethylaluminium Chemical compound CC[Al](CC)CC VOITXYVAKOUIBA-UHFFFAOYSA-N 0.000 description 2
- OTRPZROOJRIMKW-UHFFFAOYSA-N triethylindigane Chemical compound CC[In](CC)CC OTRPZROOJRIMKW-UHFFFAOYSA-N 0.000 description 2
- 238000001771 vacuum deposition Methods 0.000 description 2
- 238000001947 vapour-phase growth Methods 0.000 description 2
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 2
- FYYHWMGAXLPEAU-UHFFFAOYSA-N Magnesium Chemical compound [Mg] FYYHWMGAXLPEAU-UHFFFAOYSA-N 0.000 description 1
- 239000006061 abrasive grain Substances 0.000 description 1
- 230000004913 activation Effects 0.000 description 1
- 150000001412 amines Chemical class 0.000 description 1
- 238000013459 approach Methods 0.000 description 1
- 239000000969 carrier Substances 0.000 description 1
- 230000003749 cleanliness Effects 0.000 description 1
- 239000012141 concentrate Substances 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 238000002109 crystal growth method Methods 0.000 description 1
- 238000002447 crystallographic data Methods 0.000 description 1
- 230000002950 deficient Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 229910001873 dinitrogen Inorganic materials 0.000 description 1
- 238000007599 discharging Methods 0.000 description 1
- PZPGRFITIJYNEJ-UHFFFAOYSA-N disilane Chemical compound [SiH3][SiH3] PZPGRFITIJYNEJ-UHFFFAOYSA-N 0.000 description 1
- 238000001035 drying Methods 0.000 description 1
- 239000000428 dust Substances 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 239000003822 epoxy resin Substances 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 238000007667 floating Methods 0.000 description 1
- 229910052733 gallium Inorganic materials 0.000 description 1
- 238000004868 gas analysis Methods 0.000 description 1
- 238000007429 general method Methods 0.000 description 1
- 238000000227 grinding Methods 0.000 description 1
- 150000004820 halides Chemical class 0.000 description 1
- 238000002248 hydride vapour-phase epitaxy Methods 0.000 description 1
- 150000002431 hydrogen Chemical class 0.000 description 1
- 230000001771 impaired effect Effects 0.000 description 1
- 230000006698 induction Effects 0.000 description 1
- 239000011261 inert gas Substances 0.000 description 1
- 238000007689 inspection Methods 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 238000010884 ion-beam technique Methods 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 238000003475 lamination Methods 0.000 description 1
- 229910052749 magnesium Inorganic materials 0.000 description 1
- QBJCZLXULXFYCK-UHFFFAOYSA-N magnesium;cyclopenta-1,3-diene Chemical compound [Mg+2].C1C=CC=[C-]1.C1C=CC=[C-]1 QBJCZLXULXFYCK-UHFFFAOYSA-N 0.000 description 1
- 238000000691 measurement method Methods 0.000 description 1
- 239000007769 metal material Substances 0.000 description 1
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 1
- 238000005121 nitriding Methods 0.000 description 1
- 239000012299 nitrogen atmosphere Substances 0.000 description 1
- 230000006911 nucleation Effects 0.000 description 1
- 238000010899 nucleation Methods 0.000 description 1
- 125000002524 organometallic group Chemical group 0.000 description 1
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 1
- 230000036961 partial effect Effects 0.000 description 1
- 238000005424 photoluminescence Methods 0.000 description 1
- 238000005498 polishing Methods 0.000 description 1
- 229920000647 polyepoxide Polymers 0.000 description 1
- 239000000843 powder Substances 0.000 description 1
- 239000000565 sealant Substances 0.000 description 1
- 230000035945 sensitivity Effects 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 238000005245 sintering Methods 0.000 description 1
- 239000006104 solid solution Substances 0.000 description 1
- 238000000391 spectroscopic ellipsometry Methods 0.000 description 1
- 238000005507 spraying Methods 0.000 description 1
- 230000001960 triggered effect Effects 0.000 description 1
- 239000012808 vapor phase Substances 0.000 description 1
- 230000000007 visual effect Effects 0.000 description 1
Landscapes
- Led Devices (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
- Physical Vapour Deposition (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2008318791A JP2009283895A (ja) | 2008-12-15 | 2008-12-15 | Ｉｉｉ族窒化物半導体積層構造体 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2008318791A JP2009283895A (ja) | 2008-12-15 | 2008-12-15 | Ｉｉｉ族窒化物半導体積層構造体 |
Related Parent Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2008135939A Division JP2009283785A (ja) | 2008-05-23 | 2008-05-23 | Ｉｉｉ族窒化物半導体積層構造体およびその製造方法 |
Related Child Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2010278305A Division JP2011103472A (ja) | 2010-12-14 | 2010-12-14 | Ｉｉｉ族窒化物半導体積層構造体 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JP2009283895A true JP2009283895A (ja) | 2009-12-03 |
| JP2009283895A5 JP2009283895A5 (enExample) | 2010-07-08 |
Family
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2008318791A Pending JP2009283895A (ja) | 2008-12-15 | 2008-12-15 | Ｉｉｉ族窒化物半導体積層構造体 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP2009283895A (enExample) |
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2012025397A1 (de) * | 2010-08-26 | 2012-03-01 | Osram Opto Semiconductors Gmbh | Halbleiterbauelement und verfahren zur herstellung eines halbleiterbauelements |
| KR101335937B1 (ko) * | 2012-06-04 | 2013-12-04 | 주식회사 루미스탈 | Ｌｌｏ 방식을 이용한 질화갈륨 웨이퍼 제조 방법 |
| JP2015160995A (ja) * | 2014-02-27 | 2015-09-07 | シャープ株式会社 | ＡｌＮＯバッファ層の製造方法および窒化物半導体素子の製造方法 |
| JP2016141575A (ja) * | 2015-01-30 | 2016-08-08 | 住友金属鉱山株式会社 | エピタキシャル成長用基板及びその製造方法 |
| CN119643908A (zh) * | 2025-02-19 | 2025-03-18 | 吉林大学 | 一种薄膜透射样品制备方法 |
Citations (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS60173829A (ja) * | 1984-02-14 | 1985-09-07 | Nippon Telegr & Teleph Corp <Ntt> | 化合物半導体薄膜の成長方法 |
| JPH0964477A (ja) * | 1995-08-25 | 1997-03-07 | Toshiba Corp | 半導体発光素子及びその製造方法 |
| JP2002029896A (ja) * | 2000-07-05 | 2002-01-29 | National Institute Of Advanced Industrial & Technology | 窒化物半導体の結晶成長方法 |
| JP2003063898A (ja) * | 2001-06-15 | 2003-03-05 | Ngk Insulators Ltd | Ｉｉｉ族窒化物膜及びｉｉｉ族窒化物多層膜 |
| JP2004137142A (ja) * | 2002-03-14 | 2004-05-13 | Rikogaku Shinkokai | 単結晶窒化アルミニウム膜およびその形成方法、ｉｉｉ族窒化物膜用下地基板、発光素子、並びに表面弾性波デバイス |
| JP2007042854A (ja) * | 2005-08-03 | 2007-02-15 | Tokyo Univ Of Agriculture & Technology | アルミニウム系ｉｉｉ族窒化物結晶の製造方法および結晶積層基板 |
| JP2007095786A (ja) * | 2005-09-27 | 2007-04-12 | Toyoda Gosei Co Ltd | Ｉｉｉ族窒化物系化合物半導体発光素子 |
-
2008
- 2008-12-15 JP JP2008318791A patent/JP2009283895A/ja active Pending
Patent Citations (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS60173829A (ja) * | 1984-02-14 | 1985-09-07 | Nippon Telegr & Teleph Corp <Ntt> | 化合物半導体薄膜の成長方法 |
| JPH0964477A (ja) * | 1995-08-25 | 1997-03-07 | Toshiba Corp | 半導体発光素子及びその製造方法 |
| JP2002029896A (ja) * | 2000-07-05 | 2002-01-29 | National Institute Of Advanced Industrial & Technology | 窒化物半導体の結晶成長方法 |
| JP2003063898A (ja) * | 2001-06-15 | 2003-03-05 | Ngk Insulators Ltd | Ｉｉｉ族窒化物膜及びｉｉｉ族窒化物多層膜 |
| JP2004137142A (ja) * | 2002-03-14 | 2004-05-13 | Rikogaku Shinkokai | 単結晶窒化アルミニウム膜およびその形成方法、ｉｉｉ族窒化物膜用下地基板、発光素子、並びに表面弾性波デバイス |
| JP2007042854A (ja) * | 2005-08-03 | 2007-02-15 | Tokyo Univ Of Agriculture & Technology | アルミニウム系ｉｉｉ族窒化物結晶の製造方法および結晶積層基板 |
| JP2007095786A (ja) * | 2005-09-27 | 2007-04-12 | Toyoda Gosei Co Ltd | Ｉｉｉ族窒化物系化合物半導体発光素子 |
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2012025397A1 (de) * | 2010-08-26 | 2012-03-01 | Osram Opto Semiconductors Gmbh | Halbleiterbauelement und verfahren zur herstellung eines halbleiterbauelements |
| KR101335937B1 (ko) * | 2012-06-04 | 2013-12-04 | 주식회사 루미스탈 | Ｌｌｏ 방식을 이용한 질화갈륨 웨이퍼 제조 방법 |
| JP2015160995A (ja) * | 2014-02-27 | 2015-09-07 | シャープ株式会社 | ＡｌＮＯバッファ層の製造方法および窒化物半導体素子の製造方法 |
| JP2016141575A (ja) * | 2015-01-30 | 2016-08-08 | 住友金属鉱山株式会社 | エピタキシャル成長用基板及びその製造方法 |
| CN119643908A (zh) * | 2025-02-19 | 2025-03-18 | 吉林大学 | 一种薄膜透射样品制备方法 |
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